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61. 发明授权

US06642581B2 Semiconductor device comprising buried channel region 失效
标题翻译：半导体器件包括掩埋沟道区域
公开(公告)号：US06642581B2
公开(公告)日：2003-11-04
申请号：US10101950
申请日：2002-03-21
申请人： Satoshi Matsuda , Atsushi Azuma
发明人： Satoshi Matsuda , Atsushi Azuma
IPC分类号： H01L2976
CPC分类号： H01L29/66537 , H01L21/266 , H01L21/28079 , H01L21/28114 , H01L29/1083 , H01L29/42368 , H01L29/42376 , H01L29/495 , H01L29/66545 , H01L29/6656 , H01L29/7838
摘要： A semiconductor device includes a gate insulating film formed on a semiconductor substrate between first diffusion layers, a gate electrode including a first gate portion formed on the gate insulating film and a second gate portion formed on the first gate portion, a first width in a channel direction of the first gate portion being substantially equal to a width in that of the gate insulating film, and a second width in the channel direction of the second gate portion being larger than the first width, a gate side wall insulating film including a first side wall portion formed on a side surface of the first gate portion and the gate insulating film and a second side wall portion formed on a side surface of the second gate portion, and a second diffusion layer formed apart from the first diffusion layers below the gate insulating film.
摘要翻译：半导体器件包括形成在第一扩散层之间的半导体衬底上的栅极绝缘膜，包括形成在栅极绝缘膜上的第一栅极部分的栅电极和形成在第一栅极部分上的第二栅极部分，沟道中的第一宽度第一栅极部分的方向基本上等于栅极绝缘膜的宽度，并且第二栅极部分的沟道方向上的第二宽度大于第一宽度;栅极侧壁绝缘膜，包括第一侧形成在第一栅极部分和栅极绝缘膜的侧表面上的壁部分和形成在第二栅极部分的侧表面上的第二侧壁部分，以及与栅极绝缘下方的第一扩散层分开形成的第二扩散层电影。

62. 发明授权

US5698881A MOSFET with solid phase diffusion source 失效
标题翻译：具有固相扩散源的MOSFET
公开(公告)号：US5698881A
公开(公告)日：1997-12-16
申请号：US353240
申请日：1994-12-02
申请人： Takashi Yoshitomi , Masanobu Saito , Hisayo Momose , Hiroshi Iwai , Yukihiro Ushiku , Mizuki Ono , Yasushi Akasaka , Hideaki Nii , Satoshi Matsuda , Yasuhiro Katsumata , Tatsuya Ooguro , Claudio Fiegna
发明人： Takashi Yoshitomi , Masanobu Saito , Hisayo Momose , Hiroshi Iwai , Yukihiro Ushiku , Mizuki Ono , Yasushi Akasaka , Hideaki Nii , Satoshi Matsuda , Yasuhiro Katsumata , Tatsuya Ooguro , Claudio Fiegna
IPC分类号： H01L21/033 , H01L21/225 , H01L21/28 , H01L21/336 , H01L21/8238 , H01L27/092 , H01L29/08 , H01L29/423 , H01L29/76
CPC分类号： H01L29/6659 , H01L21/0338 , H01L21/2255 , H01L21/28035 , H01L21/28123 , H01L21/823814 , H01L27/0928 , H01L29/0847 , H01L29/42376 , H01L29/66628
摘要： A MOS type semiconductor device has a gate whose length is 170 nm (0.17 .mu.m) or less, a junction depth of source and drain diffusion layers in the vicinity of a channel is 22 nm or less, and a concentration of impurities at the surface in the source and drain diffusion layers is made to 10.sup.20 cm.sup.-3 or more. Such structure is obtained using solid phase diffusion using heat range from 950.degree. C. to 1050.degree. C. and/or narrowing gate width by ashing or etching. The other MOS type semiconductor device is characterized in that the relationship between the junction depth x.sub.j �nm! in the source and drain diffusion layer regions and the effective channel length L.sub.eff �nm! is determined by L.sub.eff >0.69 x.sub.j -6.17.
摘要翻译： MOS型半导体器件具有长度为170nm（0.17μm）以下的栅极，沟道附近的源极和漏极扩散层的结深度为22nm以下，表面上的杂质浓度在源极和漏极扩散层中形成1020cm-3以上。这种结构使用从950℃到1050℃的热范围的固相扩散和/或通过灰化或蚀刻使栅极宽度变窄来获得。其他MOS型半导体器件的特征在于源极和漏极扩散层区域中的结深度xj [nm]与有效沟道长度Leff [nm]之间的关系由Leff> 0.69×j-6.17确定。

63. 发明授权

US4511821A Support structure for piezoelectric vibrator 失效
标题翻译：压电振子的支撑结构
公开(公告)号：US4511821A
公开(公告)日：1985-04-16
申请号：US548869
申请日：1983-11-04
申请人： Takeshi Nakamura , Hiroshi Nishiyama , Satoshi Matsuda , Ikuo Matsumoto
发明人： Takeshi Nakamura , Hiroshi Nishiyama , Satoshi Matsuda , Ikuo Matsumoto
IPC分类号： H03H9/17 , H03H9/05 , H01L41/08
CPC分类号： H03H9/1035 , H03H9/0595
摘要： A support structure for a vibrator comprising a casing having two sets of conical projections formed therein so as to confront each other, and a support framework supporting the vibrator at nodes of vibration thereof. The vibrator is supported within the casing with the support framework sandwiched between the tips of the respective projections of those two sets at the associated nodes of vibration of the support structure.
摘要翻译：一种用于振动器的支撑结构，包括：壳体，其具有形成在其中的两组锥形突起，以便彼此面对;以及支撑框架，其在振动节点处支撑振动器。振动器支撑在壳体内，其中支撑框架夹在支撑结构的振动的相关节点处的两组的各个突起的尖端之间。

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