专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明授权

US07741260B2 Rinsing fluid for lithography 失效
标题翻译：用于光刻的冲洗液
公开(公告)号：US07741260B2
公开(公告)日：2010-06-22
申请号：US11587268
申请日：2005-04-20
申请人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
发明人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
IPC分类号： C11D7/32
CPC分类号： G03F7/32 , C11D3/245 , C11D3/349 , C11D11/0041 , G03F7/322
摘要： The invention provides a novel rinsing fluid which can convert an easily wettable resist pattern surface having a contact angle of 40° or below into one having a contact angle of 70° or above to inhibit pattern collapse effectively and thereby give high-quality products. The rinsing fluid consists of a solution containing at least one fluorine compound soluble in water or alcoholic solvents which is selected from among compounds represented by the general formula (I), those represented by the general formula (II), and those represented by the general formula: Rf′—COOH: wherein R1 and R2 are each optionally substituted C1-5 alkyl whose hydrogen atoms are partially or wholly replaced by fluorine, or R1 and R2 together with the SO2 groups to which they are bonded and the nitrogen atom may form a five- or six-membered ring; Rf is optionally substituted C1-5 alkyl whose hydrogen atoms are partially or wholly replaced by fluorine; m and n are each an integer of 2 or 3; and Rf′ is at least partially fluorinated alkyl having 8 to 20 carbon atoms.
摘要翻译：本发明提供了一种新颖的冲洗液，其可以将具有40°或更低接触角的容易润湿的抗蚀剂图案表面转变成接触角为70°或更高的接触角，以有效抑制图案塌陷，从而产生高质量的产品。冲洗液由含有至少一种可溶于水的氟化合物或醇溶剂的溶液组成，所述氟化合物选自由通式（I）表示的化合物，由通式（II）表示的化合物和由通式式：Rf'-COOH：其中R 1和R 2各自是氢或被氟部分或全部取代的任选取代的C 1-5烷基，或者R 1和R 2与它们所键合的SO 2基团和氮原子可形成五元或六元环; Rf是任选取代的C 1-5烷基，其氢原子部分或全部被氟取代; m和n分别为2或3的整数; Rf'为至少部分氟化的碳原子数为8〜20的烷基。

62. 发明申请

US20090291565A1 Method for stripping photoresist 审中-公开
标题翻译：剥离光刻胶的方法
公开(公告)号：US20090291565A1
公开(公告)日：2009-11-26
申请号：US12458992
申请日：2009-07-29
申请人： Shigeru Yokoi , Kazumasa Wakiya , Takayuki Haraguchi
发明人： Shigeru Yokoi , Kazumasa Wakiya , Takayuki Haraguchi
IPC分类号： H01L21/465
CPC分类号： G03F7/425
摘要： Disclosed is a method for stripping a photoresist comprising: (I) providing a photoresist pattern on a substrate where the substrate has at least a copper (Cu) wiring and a low-dielectric layer thereon, and selectively etching the low-dielectric layer by using the photoresist pattern as a mask; (II) contacting the substrate after the step (I), with ozone water and/or aqueous hydrogen peroxide; and (III) contacting the substrate after the step (II), with a photoresist stripping solution that contains at least a quaternary ammonium hydroxide. The present invention provides a method for stripping a photoresist that enables to strip effectively photoresist films and etching residues after etching step even in a process not including an O2 plasma ashing treatment in micropatterning of a substrate having at least Cu wiring and a low-dielectric layer thereon, as in a dual damascene forming process, and, in addition, the method of the invention does not have any negative influence on the dielectric constant of the low-dielectric layer, and ensures an excellent anti-corrosivity.
摘要翻译：公开了一种剥离光致抗蚀剂的方法，包括：（I）在衬底上提供光致抗蚀剂图案，其中衬底至少具有铜（Cu）布线和其上的低电介质层，并且通过使用选择性地蚀刻低电介质层光刻胶图案作为掩模; （II）在步骤（I）之后与臭氧水和/或过氧化氢水溶液接触; 和（III）在步骤（II）之后使基底与至少含有氢氧化季铵的光致抗蚀剂剥离溶液接触。本发明提供一种剥离光致抗蚀剂的方法，其即使在不包括至少Cu布线和低介电层的基板的微图案中的不包括O 2等离子体灰化处理的工艺中，也能够有效地剥离光刻胶膜和蚀刻残留物在其中，如在双镶嵌形成工艺中，并且另外，本发明的方法对低电介质层的介电常数没有任何负面影响，并且确保了优异的抗腐蚀性。

63. 发明申请

US20090011601A1 Over-coating agent for forming fine patterns and a method of forming fine patterns using such agent 审中-公开
标题翻译：用于形成精细图案的过涂层剂和使用这种试剂形成精细图案的方法
公开(公告)号：US20090011601A1
公开(公告)日：2009-01-08
申请号：US12230914
申请日：2008-09-08
申请人： Yoshiki Sugeta , Fumitake Kaneko , Toshikazu Tachikawa , Kazumasa Wakiya
发明人： Yoshiki Sugeta , Fumitake Kaneko , Toshikazu Tachikawa , Kazumasa Wakiya
IPC分类号： H01L21/311 , C08L29/04 , C08L1/08 , C08F16/06
CPC分类号： G03F7/40 , G03F7/0035
摘要： It is disclosed an over-coating agent for forming fine-line patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing a copolymer or a mixture of polyvinyl alcohol with a water-soluble polymer other than polyvinyl alcohol. Also disclosed is a method of forming fine-line patterns using the over-coating agent. According to the invention, one can effectively increase the shrinkage amount (the amount of heat shrinking) of the agent, thereby achieving a remarkably improved effect of forming or defining fine-line patterns and which also present satisfactory profiles and meet the characteristics required of today's semiconductor devices.
摘要翻译：公开了一种用于形成细线图案的过涂层剂，其用于覆盖其上具有光致抗蚀剂图案的基底并且允许在加热下收缩，使得相邻光致抗蚀剂图案之间的间隔减小，涂层剂基本上完全除去以形成或限定精细痕迹图案，其特征还在于含有聚乙烯醇与聚乙烯醇以外的水溶性聚合物的共聚物或混合物。还公开了使用过涂层剂形成细线图案的方法。根据本发明，可以有效地提高试剂的收缩量（热收缩量），从而实现形成或限定细线图案的显着改善的效果，并且还具有令人满意的轮廓并满足当今的要求半导体器件。

64. 发明申请

US20080032202A1 Material for Forming Resist Protective Film for Use in Liquid Immersion Lithography Process and Method for Forming Resist Pattern Using the Protective Film 有权
标题翻译：用于液浸式平版印刷工艺中形成抗蚀保护膜的材料及使用保护膜形成抗蚀剂图案的方法
公开(公告)号：US20080032202A1
公开(公告)日：2008-02-07
申请号：US11587509
申请日：2005-04-25
申请人： Keita Ishizuka , Kazumasa Wakiya , Kotaro Endo , Masaaki Yoshida
发明人： Keita Ishizuka , Kazumasa Wakiya , Kotaro Endo , Masaaki Yoshida
IPC分类号： C08F20/10 , C08F22/00 , C08F36/16 , G03F7/11 , H01L21/027
CPC分类号： G03F7/11 , C08F220/18 , C08F220/28 , C08F232/08 , G03F7/2041
摘要： The liquid immersion lithography process is configured so that the resist pattern resolution is improved by exposing a resist film to the lithographic exposure light under the conditions in which the predetermined thickness of the liquid for liquid immersion lithography, of which the refractive index is higher than that of air and smaller than that of the resist film is intervened at least on the resist film in a path of the lithography exposure light reaching the resist film, a protective film is formed on the surface of the resist film to be used. Therefore, when various immersion liquid, water being the representative example is used in the liquid immersion lithography process can be formed, the deterioration of the resist film and the immersion liquid to be used are simultaneously prevented, and the number of the process steps are not increased, and then the resist pattern having higher resolving ability.
摘要翻译：液浸光刻工艺被配置为通过在其中折射率高于液浸光刻液的液体光刻液体的预定厚度的条件下将抗蚀剂膜暴露于平版曝光光下来改善抗蚀剂图案分辨率的空气并且小于抗蚀剂膜的空气至少在到达抗蚀剂膜的光刻曝光光的路径中的抗蚀剂膜上被干涉，在要使用的抗蚀剂膜的表面上形成保护膜。因此，在液浸光刻工序中，可以形成各种浸渍液，作为代表例的水，同时防止使用的抗蚀剂膜和浸渍液的劣化，处理工序的数量不是增加，然后抗蚀剂图案具有较高的分辨能力。

65. 发明申请

US20080011714A1 Photoresist stripping solution and a method of stripping photoresists using the same 有权
标题翻译：光阻剥离溶液和使用其剥离光致抗蚀剂的方法
公开(公告)号：US20080011714A1
公开(公告)日：2008-01-17
申请号：US11898174
申请日：2007-09-10
申请人： Shigeru Yokoi , Kazumasa Wakiya
发明人： Shigeru Yokoi , Kazumasa Wakiya
IPC分类号： B44C1/22 , C09K13/06
CPC分类号： G03F7/425 , G03F7/423 , G03F7/426 , H01L21/02071 , H01L21/31116
摘要： A photoresist stripping solution which comprises (a) a salt of hydrofluoric acid with a base free from metal ions, (b) a water-soluble organic solvent, (c) a mercapto group containing corrosion inhibitor, and (d) water, and a method of stripping photoresists with the use of the same are disclosed. In case of using ammonium fluoride as component (a), the photoresist stripping solution may further contain (e) a salt of hydrofluoric acid with a quaternary ammonium hydroxide, such as tetramethylammonium hydroxide, tetrapropylammonium hydroxide, etc., and/or an alkanolamine. The photoresist stripping solution of the present invention has an excellent effect of protecting both Al— and Cu-based metal wiring conductors from corrosion, of efficiently stripping photoresist films and post-ashing residues, and is free from the precipitation of the corrosion inhibitor.
摘要翻译：一种光致抗蚀剂剥离溶液，其包含（a）不含金属离子的碱的氢氟酸盐，（b）水溶性有机溶剂，（c）含巯基的缓蚀剂，和（d）水，和公开了使用其剥离光致抗蚀剂的方法。在使用氟化铵作为组分（a）的情况下，光致抗蚀剂剥离溶液还可以含有（e）氢氟酸盐与季铵氢氧化物如四甲基氢氧化铵，四丙基氢氧化铵等和/或链烷醇胺。本发明的光致抗蚀剂剥离溶液具有优异的保护Al和Cu基金属布线导体免受腐蚀，有效地剥离光致抗蚀剂膜和后灰化残留物的作用，并且没有腐蚀抑制剂的沉淀。

66. 发明申请

US20070243494A1 Photoresist stripping solution and a method of stripping photoresists using the same 审中-公开
标题翻译：光阻剥离溶液和使用其剥离光致抗蚀剂的方法
公开(公告)号：US20070243494A1
公开(公告)日：2007-10-18
申请号：US11812160
申请日：2007-06-15
申请人： Shigeru Yokoi , Kazumasa Wakiya
发明人： Shigeru Yokoi , Kazumasa Wakiya
IPC分类号： G03F7/32
CPC分类号： G03F7/422 , C11D7/265 , C11D7/3218 , C11D7/34 , C11D11/0047 , G03F7/425
摘要： A photoresist stripping solution comprising (a) a carboxyl group-containing acidic compound, (b) at least one basic compound (for example, monoethanolamine, tetraalkylammonium) selected from among alkanolamines and specific quaternary ammonium hydroxides, (c) a sulfur-containing corrosion inhibitor and (d) water, and having a pH value of 3.5-5.5; and a method of stripping photoresists using the same are disclosed. The present invention provides a photoresist stripping solution which is excellent in the effect of protecting metal wirings (in particular, Cu wirings) from corrosion, never damages interlevel films, such as low dielectric layers or organic SOG layers, and shows excellent strippability of photoresist films and post-ashing residues.
摘要翻译：一种光致抗蚀剂剥离溶液，其包含（a）含羧基的酸性化合物，（b）至少一种选自烷醇胺和特定季铵氢氧化物的碱性化合物（例如单乙醇胺，四烷基铵），（c）含硫腐蚀抑制剂和（d）水，pH值为3.5-5.5; 并公开了使用其剥离光致抗蚀剂的方法。本发明提供一种光刻胶剥离溶液，其保护金属布线（特别是铜布线）不受腐蚀的影响，不会损害诸如低电介质层或有机SOG层的层间膜，并且显示出优异的光致抗蚀剂剥离性和后灰化残留物。

67. 发明申请

US20060128581A1 Lithographic rinse solution and method for forming patterned resist layer using the same 有权
标题翻译：平版印刷冲洗液及其形成图案化抗蚀剂层的方法
公开(公告)号：US20060128581A1
公开(公告)日：2006-06-15
申请号：US11296343
申请日：2005-12-08
申请人： Yoshihiro Sawada , Jun Koshiyama , Kazumasa Wakiya , Atsushi Miyamoto , Hidekazu Tajima
发明人： Yoshihiro Sawada , Jun Koshiyama , Kazumasa Wakiya , Atsushi Miyamoto , Hidekazu Tajima
IPC分类号： C11D9/00
CPC分类号： C11D7/3281 , C11D11/0047
摘要： The invention provides a novel rinse solution used in the step of rinse treatment of a patterned photoresist layer developed with an aqueous alkaline developer solution in a photolithographic process for the manufacture of semiconductor devices and liquid crystal display panels. The rinse solution provided by the invention is an aqueous solution of a nitrogen-containing heterocyclic compound such as imidazoline, pyridine and the like in a concentration up to 10% by mass. Optionally, the rinse solution of the invention further contains a water-miscible alcoholic or glycolic organic solvent and/or a water-soluble resin. The invention also provides a lithographic method for the formation of a patterned photoresist layer including a step of rinse treatment of an alkali-developed resist layer with the rinse solution defined above. The invention provides an improvement on the lithographic process in respect of the product quality and efficiency of the process.
摘要翻译：本发明提供了一种用于在用于制造半导体器件和液晶显示面板的光刻工艺中用碱性显影剂水溶液显影的图案化光刻胶层的漂洗处理步骤中使用的新型冲洗溶液。本发明提供的冲洗溶液为浓度高达10质量％的含氮杂环化合物如咪唑啉，吡啶等的水溶液。任选地，本发明的冲洗溶液还含有水混溶性醇或乙醇酸有机溶剂和/或水溶性树脂。本发明还提供了一种用于形成图案化光致抗蚀剂层的光刻方法，包括用上述定义的冲洗溶液冲洗处理碱显影抗蚀剂层的步骤。本发明提供了关于产品质量和工艺效率的光刻工艺的改进。

68. 发明申请

US20050187118A1 Cleaning solution, method for cleaning semiconductor substrate using the same, and method for forming metal wiring 审中-公开
标题翻译：清洗液，使用其的半导体基板的清洗方法以及金属配线的形成方法
公开(公告)号：US20050187118A1
公开(公告)日：2005-08-25
申请号：US11034864
申请日：2005-01-14
申请人： Takayuki Haraguchi , Shigeru Yokoi , Kazumasa Wakiya
发明人： Takayuki Haraguchi , Shigeru Yokoi , Kazumasa Wakiya
IPC分类号： H01L21/3213 , C11D7/10 , C11D7/26 , C11D7/50 , C11D11/00 , C23G1/12 , C23G1/22 , G03F7/42 , H01L21/304 , C23G1/00 , C11D1/00
CPC分类号： C11D7/10 , C11D7/264 , C11D7/5004 , C11D11/0047 , C23G1/125 , C23G1/22 , G03F7/423 , G03F7/426
摘要： The stripping-cleaning solution can advantageously strip a deposit generated on the top surface of a wiring without excessively etching the metal layer which constitutes the sidewall of the metal wiring pattern and the top surface of the wiring. The stripping-cleaning solution comprises at least a fluorine compound, a water-soluble organic solvent, water, and a bidentate ligand in an amount of 0.1 to 20% by mass based on the total mass of the tripping-cleaning solution. Alternatively, the stripping-cleaning solution comprises at least a basic aqueous solution, at least one selected from an organic compound having a carboxyl group and an anhydride thereof, water, and a bidentate ligand in an amount of 0.5 to 10% by mass based on the total mass of the stripping-cleaning solution.
摘要翻译：剥离清洗液可以有利地剥离在配线的顶面上产生的沉积物，而不会过度地蚀刻构成金属布线图案的侧壁的金属层和布线的顶面。剥离清洗液至少含有相对于脱扣清洗液的总质量为0.1〜20质量％的氟化合物，水溶性有机溶剂，水和二齿配位体。或者，汽提清洗液至少含有碱性水溶液，选自有羧基羧酸的有机化合物及其酸酐中的至少一种，水和二齿配位体，其含量为0.5〜10质量％汽提清洁溶液的总质量。

69. 发明申请

US20050176259A1 Method for removing photoresist 审中-公开
标题翻译：去除光刻胶的方法
公开(公告)号：US20050176259A1
公开(公告)日：2005-08-11
申请号：US10512586
申请日：2003-04-25
申请人： Shigeru Yokoi , Kazumasa Wakiya , Takayuki Haraguchi
发明人： Shigeru Yokoi , Kazumasa Wakiya , Takayuki Haraguchi
IPC分类号： G03F7/42 , H01L21/027 , H01L21/304 , C23F1/00 , B44C1/22 , C03C15/00 , C03C25/68
CPC分类号： G03F7/425
摘要： Disclosed is a method for stripping a photoresist comprising: (I) providing a photoresist pattern on a substrate where the substrate has at least a copper (Cu) wiring and a low-dielectric layer thereon, and selectively etching the low-dielectric layer by using the photoresist pattern as a mask; (II) contacting the substrate after the step (I), with ozone water and/or aqueous hydrogen peroxide; and (III) contacting the substrate after the step (II), with a photoresist stripping solution that contains at least a quaternary ammonium hydroxide. The present invention provides a method for stripping a photoresist that enables to strip effectively photoresist films and etching residues after etching step even in a process not including an O2 plasma ashing treatment in micropatterning of a substrate having at least Cu wiring and a low-dielectric layer thereon, as in a dual damascene forming process, and, in addition, the method of the invention does not have any negative influence on the dielectric constant of the low-dielectric layer, and ensures an excellent anti-corrosivity.
摘要翻译：公开了一种剥离光致抗蚀剂的方法，包括：（I）在衬底上提供光致抗蚀剂图案，其中衬底至少具有铜（Cu）布线和其上的低电介质层，并且通过使用选择性地蚀刻低电介质层光刻胶图案作为掩模; （II）在步骤（I）之后与臭氧水和/或过氧化氢水溶液接触; 和（III）在步骤（II）之后使基底与至少含有氢氧化季铵的光致抗蚀剂剥离溶液接触。本发明提供了一种剥离光致抗蚀剂的方法，其即使在不包括O 2等离子体灰浆化处理的工艺中，也能够有效地剥离光致抗蚀剂膜和蚀刻残留物，在至少具有至少 Cu布线和其中的低介电层，如在双镶嵌形成工艺中，此外，本发明的方法对低电介质层的介电常数没有任何负面影响，并且确保了优异的抗 - 腐蚀性

70. 发明授权

US06689535B2 Anti-reflective coating composition, multilayer photoresist material using the same, and method for forming pattern 有权
标题翻译：抗反射涂料组合物，使用其的多层光刻胶材料，以及形成图案的方法
公开(公告)号：US06689535B2
公开(公告)日：2004-02-10
申请号：US09986673
申请日：2001-11-09
申请人： Etsuko Iguchi , Takeshi Tanaka , Kazumasa Wakiya
发明人： Etsuko Iguchi , Takeshi Tanaka , Kazumasa Wakiya
IPC分类号： G03F7003
CPC分类号： G03F7/091
摘要： Disclosed is an anti-reflective coating composition for forming an anti-reflective coating as an undercoating layer is provided, comprising a crosslinking agent, which is at least one compound selected from nitrogen-containing compounds having an amino group(s) and/or an imino group(s) at least two hydrogen atoms of which are substituted by a hydroxyalkyl group(s) and/or an alkoxyalkyl group(s), and an acidic compound, wherein the crosslinking agent is such that the proportion of its low-molecular-weight component not larger than a trimer is adjusted to be 15 wt % or less; a multilayer photoresist material using the composition; and a method for forming a pattern. According to the present invention, even in the formation of a hyperfine pattern, it is possible to provide a photoresist pattern having a rectangular cross-sectional profile in relation to the substrate without causing any undesirable phenomena, such as footing, undercutting, etc. at is bottom.
摘要翻译：公开了一种抗反射涂层组合物，其用于形成作为底涂层的抗反射涂层，其包含交联剂，其为至少一种选自具有氨基的含氮化合物和/或其中至少两个氢原子被羟基烷基和/或烷氧基烷基取代的亚氨基，和酸性化合物，其中交联剂使得其低分子量不大于三聚体的重量成分调整为15重量％以下; 使用该组合物的多层光致抗蚀剂材料; 以及形成图案的方法。根据本发明，即使形成超精细图案，也可以提供相对于基板具有矩形截面轮廓的光致抗蚀剂图案，而不会引起任何不期望的现象，例如基底，底切等是底部

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式