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61. 发明申请

US20060091332A1 Method and its apparatus for inspecting particles or defects of a semiconductor device 有权
公开(公告)号：US20060091332A1
公开(公告)日：2006-05-04
申请号：US11302847
申请日：2005-12-13
申请人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
发明人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
IPC分类号： G01N21/86
CPC分类号： G01N21/4738 , G01N21/8806 , G01N21/93 , G01N21/94 , G01N21/9501 , G01N2015/1486 , G01N2015/1493
摘要： Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.

62. 发明授权

US07021056B2 Exhaust heat recovery system 失效
标题翻译：废热回收系统
公开(公告)号：US07021056B2
公开(公告)日：2006-04-04
申请号：US10467027
申请日：2002-11-29
申请人： Kenji Watanabe , Tomonari Ito
发明人： Kenji Watanabe , Tomonari Ito
IPC分类号： F02G1/00
CPC分类号： F02G5/02 , F24D11/005 , F24D2200/26 , F24H2240/06 , F28D20/0034 , F28D21/0003 , F28D2020/0095 , Y02T10/166
摘要： The present invention relates to an exhaust heat recovery system that recovers exhaust heat that is generated by an electrical power generator for use in supplying hot water and air conditioning, and has as an object of providing an exhaust heat recovery system that realizes reduced costs and has a high energy efficiency. The exhaust heat recovery system provides a heat exchanger HEX1 for exhaust heat recovery that heats heating medium by heat exchange between exhaust gas generated at the power generator and heating medium that is circulated and used in a predetermined facility. In addition, the exhaust heat recovery system comprises a tank 13 that temporarily stores the heating medium, and an open-air pipe 41 that releases the contents of the tank 13.
摘要翻译：本发明涉及一种回收由用于供应热水和空调的发电机产生的排热的排气热回收系统，其目的在于提供实现降低成本的废热回收系统，并具有能源效率高。废热回收系统提供一种用于废热回收的热交换器HEX 1，其通过在发电机产生的排气与在预定设施中循环使用的加热介质之间的热交换来加热加热介质。此外，废热回收系统包括临时存储加热介质的罐13和释放罐13的内容物的露天管41。

63. 发明申请

US20050264798A1 Method and its apparatus for inspecting particles or defects of a semiconductor device 有权
标题翻译：用于检查半导体器件的颗粒或缺陷的方法及其装置
公开(公告)号：US20050264798A1
公开(公告)日：2005-12-01
申请号：US11190838
申请日：2005-07-28
申请人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ohshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
发明人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ohshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
IPC分类号： G01N21/27 , G01N21/47 , G01N21/88 , G01N21/94 , G01N21/95
CPC分类号： G01N21/274 , G01N21/47 , G01N21/4738 , G01N21/8806 , G01N21/94 , G01N21/95 , G01N21/956 , G01N2021/8854
摘要： An apparatus for optically inspecting particles and/or defects correlates sizes of particles and/or defects to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.
摘要翻译：用于光学检查颗粒和/或缺陷的装置将颗粒和/或缺陷的尺寸与检查结果中的故障原因相关联。数据处理电路从检查结果统计中指出故障原因，并显示检查结果信息。通过设定用于识别半导体装置等上的各区域的故障的阈值来进行故障分析，以统计学评价检测出的粒子。

64. 发明授权

US06949735B1 Beam source 失效
标题翻译：光源
公开(公告)号：US06949735B1
公开(公告)日：2005-09-27
申请号：US10030087
申请日：2000-07-14
申请人： Masahiro Hatakeyama , Katsunori Ichiki , Kenji Watanabe , Tohru Satake
发明人： Masahiro Hatakeyama , Katsunori Ichiki , Kenji Watanabe , Tohru Satake
IPC分类号： G21G4/02 , H01J27/16 , H01J37/08 , H01J37/32 , H05H3/00
CPC分类号： H01J37/32192 , H01J27/16 , H01J37/08 , H01J37/321 , H05H3/00
摘要： An object of the present invention is to provide a beam source capable of efficiently generating a high-density energy beam having good directivity and a relatively large beam diameter. The beam source of the present invention comprises a discharge tube; a gas inlet for introducing gas into the discharge tube; three electrodes mounted in the discharge tube downstream from the gas inlet, wherein the electrode on the upstream end has a plurality of openings through which the gas can pass, the middle electrode is a mesh-shaped electrode, and the electrode on the downstream end is a beam-emitting electrode having a plurality of beam-emitting holes and is disposed in a plane parallel to the middle electrode; plasma-generating means disposed between the two upstream electrodes on the outside of the discharge tube for transforming gas introduced into the discharge tube into plasma; and voltage-applying means for accelerating the beam between the two downstream electrodes and emitting the accelerated beam from the downstream beam-emitting electrode.
摘要翻译：本发明的目的是提供一种能够有效地产生具有良好方向性和较大光束直径的高密度能量束的束源。本发明的光束源包括放电管; 用于将气体引入放电管的气体入口; 三个电极安装在放气管的气体入口下游，其中上游端的电极具有多个开口，气体可以通过该开口，中间电极是网状电极，下游端的电极是具有多个光束发射孔并且布置在与中间电极平行的平面中的光束发射电极; 等离子体产生装置，设置在放电管外侧的两个上游电极之间，用于将引入放电管的气体转化为等离子体; 以及用于加速两个下游电极之间的光束并从下游光束发射电极发射加速光束的电压施加装置。

65. 发明申请

US20050196033A1 Method of inspecting a semiconductor device and an apparatus thereof 有权
标题翻译：检查半导体器件的方法及其装置
公开(公告)号：US20050196033A1
公开(公告)日：2005-09-08
申请号：US11117336
申请日：2005-04-29
申请人： Akira Hamamatsu , Minori Noguchi , Yoshimasa Ohshima , Hidetoshi Nishiyama , Kenji Oka , Takanori Ninomiya , Maki Tanaka , Kenji Watanabe , Tetsuya Watanabe , Yoshio Morishige
发明人： Akira Hamamatsu , Minori Noguchi , Yoshimasa Ohshima , Hidetoshi Nishiyama , Kenji Oka , Takanori Ninomiya , Maki Tanaka , Kenji Watanabe , Tetsuya Watanabe , Yoshio Morishige
IPC分类号： G01N21/956 , G06T7/00 , H01L21/66 , G06K9/00
CPC分类号： G06T7/001 , G01N21/8851 , G01N21/9501 , G01N2021/8861 , G01N2021/8867 , G06T7/97 , G06T2207/10152 , G06T2207/30148
摘要： A method of inspecting a sample in which the sample is inspected under a plurality of inspection conditions and inspection data obtained by inspecting the sample under each of the plurality of inspection conditions and position information on the sample of the inspection date in correspondence with the respective inspection conditions are stored. The inspection data for each of the plurality of inspection conditions is against each other by the use of the position information on the sample to determine a position to be inspected in detail, and an image of the sample at a position to be inspected in detail is obtained. The obtained image is classified, the inspection condition of the sample by the use of information of classification of the image is determined.
摘要翻译：检查在多个检查条件下检查样品的样品的检查方法以及根据多个检查条件中的每一个检查样品而获得的检查数据以及与检查日期对应的检查日期的样品的位置信息的方法条件被存储。多个检查条件中的每一个的检查数据通过使用关于样本的位置信息彼此相对来确定待检查的位置，并且在待检查位置处的样本的图像是详细的获得。对所获得的图像进行分类，确定通过使用图像分类信息的样本的检查条件。

66. 发明申请

US20050133733A1 Electron beam system and method of manufacturing devices using the system 失效
公开(公告)号：US20050133733A1
公开(公告)日：2005-06-23
申请号：US11034873
申请日：2005-01-14
申请人： Mamoru Nakasuji , Takao Kato , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji
发明人： Mamoru Nakasuji , Takao Kato , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji
IPC分类号： G01N23/04 , G21K7/00 , H01J37/28 , G21G5/00
CPC分类号： H01J37/28 , G01N23/04 , H01J2237/2817
摘要： An electron beam system wherein a shot noise of an electron beam can be reduced and a beam current can be made higher, and further a shaped beam is formed by a two-stage lenses so as to allow for an operation with high stability. In this electron beam system, an electron beam emitted from an electron gun is irradiated onto a sample and secondary electrons emanated from the sample are detected. The electron gun is a thermionic emission type and designed to operate in a space charge limited condition. A shaping aperture and a NA aperture are arranged in front locations of the electron gun. An image of the shaping aperture formed by an electron beam emitted from the thermionic emission electron gun is focused onto a surface of the sample through the two-stage lenses.

67. 发明申请

US20050121611A1 Apparatus for inspection with electron beam, method for operating same, and method for manufacturing semiconductor device using former 失效
标题翻译：用于电子束检查的装置，其操作方法以及使用前者制造半导体器件的方法
公开(公告)号：US20050121611A1
公开(公告)日：2005-06-09
申请号：US11037084
申请日：2005-01-19
申请人： Toshifumi Kimba , Tohru Satake , Tsutomu Karimata , Kenji Watanabe , Nobuharu Noji , Takeshi Murakami , Masahiro Hatakeyama , Mamoru Nakasuji , Hirosi Sobukawa , Shoji Yoshikawa , Shin Oowada , Mutsumi Saito
发明人： Toshifumi Kimba , Tohru Satake , Tsutomu Karimata , Kenji Watanabe , Nobuharu Noji , Takeshi Murakami , Masahiro Hatakeyama , Mamoru Nakasuji , Hirosi Sobukawa , Shoji Yoshikawa , Shin Oowada , Mutsumi Saito
IPC分类号： G01N23/225 , G01Q30/02 , H01J37/06 , H01J37/073 , H01J37/18 , H01J37/20 , H01J37/22 , H01J37/244 , H01J37/28 , G01N23/00 , G21K7/00
CPC分类号： H01J37/222 , G01N23/225 , G01N23/2251 , H01J37/06 , H01J37/073 , H01J37/185 , H01J37/20 , H01J37/244 , H01J37/28 , H01J2237/0216 , H01J2237/082 , H01J2237/2002 , H01J2237/2007 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/24564 , H01J2237/2806 , H01J2237/2813 , H01J2237/2816 , H01J2237/2817 , H01L2224/48227 , H01L2924/01019 , H01L2924/01025 , H01L2924/01057 , H01L2924/01067 , H01L2924/01078 , H01L2924/10253 , H01L2924/12032 , H01L2924/3025 , H01L2924/00
摘要： A substrate inspection apparatus 1-1 (FIG. 1) of the present invention performs the following steps of: carrying a substrate “S” to be inspected into an inspection chamber 23-1; maintaining a vacuum in said inspection chamber; isolating said inspection chamber from a vibration; moving successively said substrate by means of a stage 26-1 with at least one degree of freedom; irradiating an electron beam having a specified width; helping said electron beam reach to a surface of said substrate via a primary electron optical system 10-1; trapping secondary electrons emitted from said substrate via a secondary electron optical system 20-1 and guiding it to a detecting system 35-1; forming a secondary electron image in an image processing system based on a detection signal of a secondary electron beam obtained by said detecting system; detecting a defective location in said substrate based on the secondary electron image formed by said image processing system; indicating and/or storing said defective location in said substrate by CPU 37-1; and taking said completely inspected substrate out of the inspection chamber. Thereby, the defect inspection on the substrate can be performed successively with high level of accuracy and efficiency as well as with higher throughput.
摘要翻译：本发明的基板检查装置1-1（图1）执行以下步骤：将要检查的基板“S”运送到检查室23-1中; 在所述检查室中保持真空; 将所述检查室与振动隔离; 通过至少一个自由度的阶段26-1连续地移动所述衬底; 照射具有指定宽度的电子束; 帮助所述电子束经由一次电子光学系统10-1到达所述衬底的表面; 通过二次电子光学系统20-1捕获从所述衬底发射的二次电子并将其引导到检测系统35-1; 基于由所述检测系统获得的二次电子束的检测信号，在图像处理系统中形成二次电子图像; 基于由所述图像处理系统形成的二次电子图像检测所述基板中的缺陷位置; 通过CPU37-1指示和/或存储所述衬底中的所述缺陷位置; 并将完全检查的基板从检查室中取出。因此，可以以高水平的精度和效率以及更高的生产量连续地执行基板上的缺陷检查。

68. 发明授权

US06894302B2 Surface inspection apparatus and method thereof 失效
标题翻译：表面检查装置及其方法
公开(公告)号：US06894302B2
公开(公告)日：2005-05-17
申请号：US09791742
申请日：2001-02-26
申请人： Ichiro Ishimaru , Minori Noguchi , Ichiro Moriyama , Yoshikazu Tanabe , Yasuo Yatsugake , Yukio Kenbou , Kenji Watanabe , Hirofumi Tsuchiyama
发明人： Ichiro Ishimaru , Minori Noguchi , Ichiro Moriyama , Yoshikazu Tanabe , Yasuo Yatsugake , Yukio Kenbou , Kenji Watanabe , Hirofumi Tsuchiyama
IPC分类号： G01B11/30 , G01B11/24 , G01B11/245 , G01N21/95 , G01N21/956 , G06T1/00 , H01L21/66 , G01N21/88
CPC分类号： G01N21/88 , G01N21/474 , G01N21/94 , G01N21/9501 , G01N21/9503 , G01N2021/8825 , G01N2021/8854
摘要： The invention provides a surface inspection apparatus and a method for inspecting the surface of a sample that are capable of inspecting discriminatingly between the scratch of various configuration and the adhered foreign object that occur on the surface of a work target when the work target (for example, an insulating film on a semiconductor substrate) is subjected to polishing process such as CMP or grinding process in semiconductor manufacturing process or magnetic head manufacturing process. In the invention, the scratch and foreign object that occur on the polished or ground surface of the sample is epi-illuminated and slant-illuminated by use of approximately same light flux, the difference between the scattered light intensity emitted from the shallow scratch and that from the foreign object when epi-illumination is applied and slant illumination is applied to thereby discriminate between the shallow scratch and the foreign object, and the directionality of the scattered light when the epi-illumination is applied and the slant illumination is applied is detected to thereby discriminate between the linear scratch and the foreign object.
摘要翻译：本发明提供了一种表面检查装置和用于检查样品表面的方法，所述表面检查装置和检查方法能够区分各种构型的刮擦和在作业目标（例如，工件）上发生在工作目标表面上的被粘附的异物之间的差异，半导体衬底上的绝缘膜）在半导体制造工艺或磁头制造工艺中进行诸如CMP或研磨工艺的抛光工艺。在本发明中，通过使用大致相同的光通量，在样品的抛光面或地面上发生的划痕和异物被表面照射和倾斜照射，从浅划痕发射的散射光强度与当外加照明被施加并且倾斜照明被施加以从而区分浅刮伤和异物时，并且当施加外露照明并施加倾斜照明时散射光的方向性被检测到从而区分线状刮痕和异物。

69. 发明授权

US06853143B2 Electron beam system and method of manufacturing devices using the system 有权
标题翻译：电子束系统及其制造方法
公开(公告)号：US06853143B2
公开(公告)日：2005-02-08
申请号：US10337420
申请日：2003-01-07
申请人： Mamoru Nakasuji , Takao Kato , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji
发明人： Mamoru Nakasuji , Takao Kato , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji
IPC分类号： G01N23/04 , G21K7/00 , H01J37/28 , H01J7/24 , F16K5/00
CPC分类号： H01J37/28 , G01N23/04 , H01J2237/2817
摘要： An electron beam system wherein a shot noise of an electron beam can be reduced and a beam current can be made higher, and further a shaped beam is formed by a two-stage lenses so as to allow for an operation with high stability. In this electron beam system, an electron beam emitted from an electron gun is irradiated onto a sample and secondary electrons emanated from the sample are detected. The electron gun is a thermionic emission type and designed to operate in a space charge limited condition. A shaping aperture and a NA aperture are arranged in front locations of the electron gun. An image of the shaping aperture formed by an electron beam emitted from the thermionic emission electron gun is focused onto a surface of the sample through the two-stage lenses.
摘要翻译：一种电子束系统，其中可以减少电子束的喷射噪声并且可以使束流更高，并且还可以通过两级透镜形成成形梁，以允许具有高稳定性的操作。在该电子束系统中，从电子枪发射的电子束照射到样品上，并检测从样品发出的二次电子。电子枪是一种热离子发射型，设计用于在空间电荷限制条件下工作。成形孔径和NA孔径布置在电子枪的前部位置。由从热电子发射电子枪发射的电子束形成的成形孔的图像通过两级透镜聚焦到样品的表面上。

70. 发明授权

US06797975B2 Method and its apparatus for inspecting particles or defects of a semiconductor device 有权
标题翻译：用于检查半导体器件的颗粒或缺陷的方法及其装置
公开(公告)号：US06797975B2
公开(公告)日：2004-09-28
申请号：US09931997
申请日：2001-08-17
申请人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
发明人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
IPC分类号： G01N2188
CPC分类号： G01N21/4738 , G01N21/8806 , G01N21/93 , G01N21/94 , G01N21/9501 , G01N2015/1486 , G01N2015/1493
摘要： Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.
摘要翻译：通常，作为检测结果，粒子/缺陷检查装置输出检测出的粒子/缺陷的总数。对于制造过程中的故障采取对策，分析检查装置检测到的颗粒/缺陷。由于检查装置输出大量检测到的粒子/缺陷，所以需要巨大的时间来分析检测到的粒子/缺陷，从而导致制造过程中的失败的对策的延迟。在本发明中，用于光学检查颗粒或缺陷的装置在检查结果中将颗粒或缺陷尺寸与故障原因相关联。数据处理电路从检查结果统计中指出故障原因，并显示检查结果信息。通过设定用于识别半导体装置等上的各区域的故障的阈值来进行故障分析，以统计学评价检测出的粒子。

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