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1. 发明授权

US07312449B2 Electron beam system and method of manufacturing devices using the system 失效
标题翻译：电子束系统及其制造方法
公开(公告)号：US07312449B2
公开(公告)日：2007-12-25
申请号：US11034873
申请日：2005-01-14
申请人： Mamoru Nakasuji , Takao Kato , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji
发明人： Mamoru Nakasuji , Takao Kato , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji
IPC分类号： G01N23/00
CPC分类号： H01J37/28 , G01N23/04 , H01J2237/2817
摘要： An electron beam system wherein a shot noise of an electron beam can be reduced and a beam current can be made higher, and further a shaped beam is formed by a two-stage lenses so as to allow for an operation with high stability. In this electron beam system, an electron beam emitted from an electron gun is irradiated onto a sample and secondary electrons emanated from the sample are detected. The electron gun is a thermionic emission type and designed to operate in a space charge limited condition. A shaping aperture and a NA aperture are arranged in front locations of the electron gun. An image of the shaping aperture formed by an electron beam emitted from the thermionic emission electron gun is focused onto a surface of the sample through the two-stage lenses.
摘要翻译：一种电子束系统，其中可以减少电子束的喷射噪声并且可以使束流更高，并且还可以通过两级透镜形成成形梁，以允许具有高稳定性的操作。在该电子束系统中，从电子枪发射的电子束照射到样品上，并检测从样品发出的二次电子。电子枪是一种热离子发射型，设计用于在空间电荷限制条件下工作。成形孔径和NA孔径布置在电子枪的前部位置。由从热电子发射电子枪发射的电子束形成的成形孔的图像通过两级透镜聚焦到样品的表面上。

2. 发明授权

US08368016B1 Electron beam apparatus and a device manufacturing method by using said electron beam apparatus 有权
标题翻译：电子束装置和使用所述电子束装置的装置制造方法
公开(公告)号：US08368016B1
公开(公告)日：2013-02-05
申请号：US12007511
申请日：2008-01-11
申请人： Mamoru Nakasuji , Takao Kato , Nobuharu Noji , Tohru Satake , Takeshi Murakami , Kenji Watanabe
发明人： Mamoru Nakasuji , Takao Kato , Nobuharu Noji , Tohru Satake , Takeshi Murakami , Kenji Watanabe
IPC分类号： H01J37/26
CPC分类号： H01J3/10 , B82Y10/00 , B82Y40/00 , G01N23/225 , H01J3/021 , H01J37/063 , H01J37/073 , H01J37/1471 , H01J37/1472 , H01J37/3174 , H01J2237/06316 , H01J2237/2817
摘要： An electron beam apparatus, in which an electron beam emitted from an electron gun having a cathode and an anode is focused and irradiated onto a sample, and secondary electrons emanated from the sample are directed into a detector, the apparatus further comprising means for optimizing irradiation of the electron beam emitted from the electron gun onto the sample, the optimizing means may be two-stage deflectors disposed in proximity to the electron gun which deflects and directs the electron beam emitted in a specific direction so as to be in alignment with the optical axis direction of the electron beam apparatus, the electron beam emitted in the specific direction being at a certain angle with respect to the optical axis due to the fact that, among the crystal orientations of said cathode, a specific crystal orientation allowing a higher level of electron beam emission out of alignment with the optical axis direction.
摘要翻译：电子束装置，其中从具有阴极和阳极的电子枪发射的电子束被聚焦并照射到样品上，并且从样品发出的二次电子被引导到检测器中，该装置还包括用于优化照射的装置从电子枪发射到样品上的电子束的优化装置可以是设置在电子枪附近的两级偏转器，其偏转并引导沿特定方向发射的电子束以与光学器件对准电子束装置的轴方向，由于在所述阴极的晶体取向中具有更高水平的特定晶体取向的事实，在特定方向上发射的电子束相对于光轴成一定角度电子束发射与光轴方向不对准。

3. 发明授权

US07361895B2 Electron beam apparatus and a device manufacturing method by using said electron beam apparatus 有权
标题翻译：电子束装置和使用所述电子束装置的装置制造方法
公开(公告)号：US07361895B2
公开(公告)日：2008-04-22
申请号：US11304680
申请日：2005-12-16
申请人： Mamoru Nakasuji , Takao Kato , Nobuharu Noji , Tohru Satake , Takeshi Murakami , Kenji Watanabe
发明人： Mamoru Nakasuji , Takao Kato , Nobuharu Noji , Tohru Satake , Takeshi Murakami , Kenji Watanabe
IPC分类号： H01J49/44
CPC分类号： H01J3/10 , B82Y10/00 , B82Y40/00 , G01N23/225 , H01J3/021 , H01J37/063 , H01J37/073 , H01J37/1471 , H01J37/1472 , H01J37/3174 , H01J2237/06316 , H01J2237/2817
摘要： An electron beam apparatus, in which an electron beam emitted from an electron gun having a cathode and an anode is focused and irradiated onto a sample, and secondary electrons emanated from the sample are directed into a detector, the apparatus further comprising means for optimizing irradiation of the electron beam emitted from the electron gun onto the sample, the optimizing means may be two-stage deflectors disposed in proximity to the electron gun which deflects and directs the electron beam emitted in a specific direction so as to be in alignment with the optical axis direction of the electron beam apparatus, the electron beam emitted in the specific direction being at a certain angle with respect to the optical axis due to the fact that, among the crystal orientations of said cathode, a specific crystal orientation allowing a higher level of electron beam emission out of alignment with the optical axis direction.
摘要翻译：电子束装置，其中从具有阴极和阳极的电子枪发射的电子束被聚焦并照射到样品上，并且从样品发出的二次电子被引导到检测器中，该装置还包括用于优化照射的装置从电子枪发射到样品上的电子束的优化装置可以是设置在电子枪附近的两级偏转器，其偏转并引导沿特定方向发射的电子束以与光学器件对准电子束装置的轴方向，由于在所述阴极的晶体取向中具有更高水平的特定晶体取向的事实，在特定方向上发射的电子束相对于光轴成一定角度电子束发射与光轴方向不对准。

4. 发明授权

US07005641B2 Electron beam apparatus and a device manufacturing method by using said electron beam apparatus 失效
公开(公告)号：US07005641B2
公开(公告)日：2006-02-28
申请号：US10731163
申请日：2003-12-10
申请人： Mamoru Nakasuji , Takao Kato , Nobuharu Noji , Tohru Satake , Takeshi Murakami , Kenji Watanabe
发明人： Mamoru Nakasuji , Takao Kato , Nobuharu Noji , Tohru Satake , Takeshi Murakami , Kenji Watanabe
IPC分类号： G21K7/00
CPC分类号： H01J3/10 , B82Y10/00 , B82Y40/00 , G01N23/225 , H01J3/021 , H01J37/063 , H01J37/073 , H01J37/1471 , H01J37/1472 , H01J37/3174 , H01J2237/06316 , H01J2237/2817
摘要： An electron beam apparatus, in which an electron beam emitted from an electron gun having a cathode and an anode is focused and irradiated onto a sample, and secondary electrons emanated from the sample are directed into a detector, the apparatus further comprising means for optimizing irradiation of the electron beam emitted from the electron gun onto the sample, the optimizing means may be two-stage deflectors disposed in proximity to the electron gun which deflects and directs the electron beam emitted in a specific direction so as to be in alignment with the optical axis direction of the electron beam apparatus, the electron beam emitted in the specific direction being at a certain angle with respect to the optical axis due to the fact that, among the crystal orientations of said cathode, a specific crystal orientation allowing a higher level of electron beam emission out of alignment with the optical axis direction.

5. 发明申请

US20060097200A1 Electron beam apparatus and a device manufacturing method by using said electron beam apparatus 有权
公开(公告)号：US20060097200A1
公开(公告)日：2006-05-11
申请号：US11304680
申请日：2005-12-16
申请人： Mamoru Nakasuji , Takao Kato , Nobuharu Noji , Tohru Satake , Takeshi Murakami , Kenji Watanabe
发明人： Mamoru Nakasuji , Takao Kato , Nobuharu Noji , Tohru Satake , Takeshi Murakami , Kenji Watanabe
IPC分类号： G21G4/00
CPC分类号： H01J3/10 , B82Y10/00 , B82Y40/00 , G01N23/225 , H01J3/021 , H01J37/063 , H01J37/073 , H01J37/1471 , H01J37/1472 , H01J37/3174 , H01J2237/06316 , H01J2237/2817
摘要： An electron beam apparatus, in which an electron beam emitted from an electron gun having a cathode and an anode is focused and irradiated onto a sample, and secondary electrons emanated from the sample are directed into a detector, the apparatus further comprising means for optimizing irradiation of the electron beam emitted from the electron gun onto the sample, the optimizing means may be two-stage deflectors disposed in proximity to the electron gun which deflects and directs the electron beam emitted in a specific direction so as to be in alignment with the optical axis direction of the electron beam apparatus, the electron beam emitted in the specific direction being at a certain angle with respect to the optical axis due to the fact that, among the crystal orientations of said cathode, a specific crystal orientation allowing a higher level of electron beam emission out of alignment with the optical axis direction.

6. 发明申请

US20130032716A1 ELECTRON BEAM APPARATUS AND A DEVICE MANUFACTURING METHOD BY USING SAID ELECTRON BEAM APPARATUS 有权
标题翻译：电子束装置和使用电子束装置的装置制造方法
公开(公告)号：US20130032716A1
公开(公告)日：2013-02-07
申请号：US12007511
申请日：2008-01-11
申请人： Mamoru Nakasuji , Takao Kato , Nobuharu Noji , Tohru Satake , Takeshi Murakami , Kenji Watanabe
发明人： Mamoru Nakasuji , Takao Kato , Nobuharu Noji , Tohru Satake , Takeshi Murakami , Kenji Watanabe
IPC分类号： H01J37/07
CPC分类号： H01J3/10 , B82Y10/00 , B82Y40/00 , G01N23/225 , H01J3/021 , H01J37/063 , H01J37/073 , H01J37/1471 , H01J37/1472 , H01J37/3174 , H01J2237/06316 , H01J2237/2817
摘要： An electron beam apparatus, in which an electron beam emitted from an electron gun having a cathode and an anode is focused and irradiated onto a sample, and secondary electrons emanated from the sample are directed into a detector, the apparatus further comprising means for optimizing irradiation of the electron beam emitted from the electron gun onto the sample, the optimizing means may be two-stage deflectors disposed in proximity to the electron gun which deflects and directs the electron beam emitted in a specific direction so as to be in alignment with the optical axis direction of the electron beam apparatus, the electron beam emitted in the specific direction being at a certain angle with respect to the optical axis due to the fact that, among the crystal orientations of said cathode, a specific crystal orientation allowing a higher level of electron beam emission out of alignment with the optical axis direction.
摘要翻译：电子束装置，其中从具有阴极和阳极的电子枪发射的电子束被聚焦并照射到样品上，并且从样品发出的二次电子被引导到检测器中，该装置还包括用于优化照射的装置从电子枪发射到样品上的电子束的优化装置可以是设置在电子枪附近的两级偏转器，其偏转并引导沿特定方向发射的电子束以与光学器件对准电子束装置的轴方向，由于在所述阴极的晶体取向中具有更高水平的特定晶体取向的事实，在特定方向上发射的电子束相对于光轴成一定角度电子束发射与光轴方向不对准。

7. 发明申请

US20050133733A1 Electron beam system and method of manufacturing devices using the system 失效
公开(公告)号：US20050133733A1
公开(公告)日：2005-06-23
申请号：US11034873
申请日：2005-01-14
申请人： Mamoru Nakasuji , Takao Kato , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji
发明人： Mamoru Nakasuji , Takao Kato , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji
IPC分类号： G01N23/04 , G21K7/00 , H01J37/28 , G21G5/00
CPC分类号： H01J37/28 , G01N23/04 , H01J2237/2817
摘要： An electron beam system wherein a shot noise of an electron beam can be reduced and a beam current can be made higher, and further a shaped beam is formed by a two-stage lenses so as to allow for an operation with high stability. In this electron beam system, an electron beam emitted from an electron gun is irradiated onto a sample and secondary electrons emanated from the sample are detected. The electron gun is a thermionic emission type and designed to operate in a space charge limited condition. A shaping aperture and a NA aperture are arranged in front locations of the electron gun. An image of the shaping aperture formed by an electron beam emitted from the thermionic emission electron gun is focused onto a surface of the sample through the two-stage lenses.

8. 发明授权

US06853143B2 Electron beam system and method of manufacturing devices using the system 有权
标题翻译：电子束系统及其制造方法
公开(公告)号：US06853143B2
公开(公告)日：2005-02-08
申请号：US10337420
申请日：2003-01-07
申请人： Mamoru Nakasuji , Takao Kato , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji
发明人： Mamoru Nakasuji , Takao Kato , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji
IPC分类号： G01N23/04 , G21K7/00 , H01J37/28 , H01J7/24 , F16K5/00
CPC分类号： H01J37/28 , G01N23/04 , H01J2237/2817
摘要： An electron beam system wherein a shot noise of an electron beam can be reduced and a beam current can be made higher, and further a shaped beam is formed by a two-stage lenses so as to allow for an operation with high stability. In this electron beam system, an electron beam emitted from an electron gun is irradiated onto a sample and secondary electrons emanated from the sample are detected. The electron gun is a thermionic emission type and designed to operate in a space charge limited condition. A shaping aperture and a NA aperture are arranged in front locations of the electron gun. An image of the shaping aperture formed by an electron beam emitted from the thermionic emission electron gun is focused onto a surface of the sample through the two-stage lenses.
摘要翻译：一种电子束系统，其中可以减少电子束的喷射噪声并且可以使束流更高，并且还可以通过两级透镜形成成形梁，以允许具有高稳定性的操作。在该电子束系统中，从电子枪发射的电子束照射到样品上，并检测从样品发出的二次电子。电子枪是一种热离子发射型，设计用于在空间电荷限制条件下工作。成形孔径和NA孔径布置在电子枪的前部位置。由从热电子发射电子枪发射的电子束形成的成形孔的图像通过两级透镜聚焦到样品的表面上。

9. 发明申请

US20050211925A1 Sample repairing apparatus, a sample repairing method and a device manufacturing method using the same method 有权
标题翻译：样品修复装置，样品修复方法和使用相同方法的装置制造方法
公开(公告)号：US20050211925A1
公开(公告)日：2005-09-29
申请号：US11037093
申请日：2005-01-19
申请人： Mamoru Nakasuji , Takao Kato , Tohru Satake , Kenji Terao , Takeshi Murakami , Nobuharu Noji
发明人： Mamoru Nakasuji , Takao Kato , Tohru Satake , Kenji Terao , Takeshi Murakami , Nobuharu Noji
IPC分类号： B23K15/00 , G03F1/72 , G03F1/74 , G21K5/10 , G21K7/00 , H01J37/08 , H01J37/18 , H01J37/305 , H01J37/317 , H01L21/027
CPC分类号： H01J37/18 , H01J2237/188 , H01J2237/31744
摘要： An object of the present invention is to provide a sample repairing apparatus, a sample repairing method and a device manufacturing method using the same method, which can reduce an edge roughness in a repaired pattern and also can provide the repairing of a sample by applying an electron beam-assisted etching or an electron beam-assisted deposition. There is provided a sample repairing method comprising: (a) a step of focussing an electron beam by an objective lens to irradiate a sample: (b) a step of supplying a reactive gas onto an electron beam irradiated surface of said sample: (c) a step of selectively scanning a pattern to be repaired on said sample with the electron beam so as to repair said pattern by applying an etching or a deposition; and (d) a step of providing a continuous exhausting operation by means of a differential exhaust system arranged in said objective lens so as to prevent the reactive gas supplied onto said electron beam irradiated surface from flowing toward an electron gun side.
摘要翻译：本发明的目的是提供一种使用相同方法的样品修复装置，样品修复方法和装置制造方法，其可以减少修复图案中的边缘粗糙度，并且还可以通过应用电子束辅助蚀刻或电子束辅助沉积。提供了一种样品修复方法，包括：（a）通过物镜聚焦电子束以照射样品的步骤：（b）将反应性气体供应到所述样品的电子束照射表面上的步骤：（c ）通过电子束选择性地扫描所述样品上要修复的图案以通过施加蚀刻或沉积来修复所述图案的步骤; 以及（d）通过布置在所述物镜中的差动排气系统提供连续排气操作以防止供应到所述电子束照射表面上的反应性气体朝向电子枪侧流动的步骤。

10. 发明授权

US07256405B2 Sample repairing apparatus, a sample repairing method and a device manufacturing method using the same method 有权
标题翻译：样品修复装置，样品修复方法和使用相同方法的装置制造方法
公开(公告)号：US07256405B2
公开(公告)日：2007-08-14
申请号：US11037093
申请日：2005-01-19
申请人： Mamoru Nakasuji , Takao Kato , Tohru Satake , Kenji Terao , Takeshi Murakami , Nobuharu Noji
发明人： Mamoru Nakasuji , Takao Kato , Tohru Satake , Kenji Terao , Takeshi Murakami , Nobuharu Noji
IPC分类号： H01J37/30 , G21K5/10
CPC分类号： H01J37/18 , H01J2237/188 , H01J2237/31744
摘要： An object of the present invention is to provide a sample repairing apparatus, a sample repairing method and a device manufacturing method using the same method, which can reduce an edge roughness in a repaired pattern and also can provide the repairing of a sample by applying an electron beam-assisted etching or an electron beam-assisted deposition. There is provided a sample repairing method comprising: (a) a step of focusing an electron beam by an objective lens to irradiate a sample: (b) a step of supplying a reactive gas onto an electron beam irradiated surface of said sample: (c) a step of selectively scanning a pattern to be repaired on said sample with the electron beam so as to repair said pattern by applying an etching or a deposition; and (d) a step of providing a continuous exhausting operation by means of a differential exhaust system arranged in said objective lens so as to prevent the reactive gas supplied onto said electron beam irradiated surface from flowing toward an electron gun side.
摘要翻译：本发明的目的是提供一种使用相同方法的样品修复装置，样品修复方法和装置制造方法，其可以减少修复图案中的边缘粗糙度，并且还可以通过应用电子束辅助蚀刻或电子束辅助沉积。提供了一种样品修复方法，包括：（a）通过物镜聚焦电子束以照射样品的步骤：（b）将反应性气体供应到所述样品的电子束照射表面上的步骤：（c ）通过电子束选择性地扫描所述样品上要修复的图案以通过施加蚀刻或沉积来修复所述图案的步骤; 以及（d）通过布置在所述物镜中的差动排气系统提供连续排气操作以防止供应到所述电子束照射表面上的反应性气体朝向电子枪侧流动的步骤。

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