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61. 发明授权

US5382800A Charged particle beam exposure method and apparatus 失效
标题翻译：带电粒子束曝光方法和装置
公开(公告)号：US5382800A
公开(公告)日：1995-01-17
申请号：US39
申请日：1993-01-04
申请人： Hisayasu Nishino , Akio Yamada , Yoshihisa Oae , Hiroshi Yasuda
发明人： Hisayasu Nishino , Akio Yamada , Yoshihisa Oae , Hiroshi Yasuda
IPC分类号： G03F7/20 , H01J37/147 , H01L21/027 , H01L21/30 , H01J3/32
CPC分类号： H01J37/1472 , H01J2237/002 , H01J2237/14 , H01J2237/152 , H01J2237/3175
摘要： A charged particle beam exposure method for deflecting a charged particle beam in a deflection system which includes electromagnetic deflection coils, includes the steps of (a) controlling the deflection system based on deflection data, and (b) generating heat at least a vicinity of the electromagnetic deflection coils so as to compensate for a change in heat generated from the electromagnetic deflection coils.
摘要翻译：一种用于使包含电磁偏转线圈的偏转系统中的带电粒子束偏转的带电粒子束曝光方法包括以下步骤：（a）基于偏转数据控制偏转系统，以及（b）至少产生热量电磁偏转线圈，以补偿由电磁偏转线圈产生的热量变化。

62. 发明授权

US5264706A Electron beam exposure system having an electromagnetic deflector configured for efficient cooling 失效
标题翻译：具有电磁偏转器的电子束曝光系统被配置为有效地冷却
公开(公告)号：US5264706A
公开(公告)日：1993-11-23
申请号：US874138
申请日：1992-04-27
申请人： Yoshihisa Oae , Akio Yamada , Hiroshi Yasuda
发明人： Yoshihisa Oae , Akio Yamada , Hiroshi Yasuda
IPC分类号： H01J37/147 , H01J3/32
CPC分类号： H01J37/1471 , H01J2237/002 , H01J2237/152 , H01J2237/3175
摘要： An electron beam exposure system comprises a beam source for producing and directing an electron beam along an optical axis, an evacuated column for accommodating the beam source and extending along the optical axis, an electron lens for focusing the electron beam on a substrate; and an electromagnetic deflector supplied with a control signal for deflecting the electron beam in response to the control signal. The electromagnetic deflector comprises an inner sleeve surrounding the evacuated column, first and second mutually separate windings provided on an outer surface of the inner sleeve in opposed relationship with respect to each other across the optical axis, an outer sleeve surrounding the inner sleeve with a separation therebetween defining a passageway for the flow of a coolant therethrough; third and fourth, mutually separate windings provided on an inner surface of the outer sleeve in opposed relationship with respect to each other across the optical axis, an inlet for introducing the coolant into the passageway, and an outlet for exiting the coolant from the passageway.
摘要翻译：电子束曝光系统包括用于沿光轴产生和引导电子束的光束源，用于容纳光束源并沿光轴延伸的抽真空柱，用于将电子束聚焦在衬底上的电子透镜; 以及电磁偏转器，其被提供有用于响应于控制信号偏转电子束的控制信号。电磁偏转器包括围绕真空柱的内套筒，第一和第二相互独立的绕组，其设置在内套筒的外表面上，相对于彼此跨越光轴的对置关系，包围内套筒的外套筒具有分离其间限定用于冷却剂流过其的通道; 第三和第四，互相分离的绕组设置在外套筒的内表面上，相对于彼此跨越光轴的相对关系，用于将冷却剂引入通道的入口和用于从冷却剂离开通道的出口。

63. 发明授权

US08536002B2 Bipolar transistor in bipolar-CMOS technology 有权
标题翻译：双极晶体管在双极CMOS技术
公开(公告)号：US08536002B2
公开(公告)日：2013-09-17
申请号：US13567552
申请日：2012-08-06
申请人： Hiroshi Yasuda , Berthold Staufer
发明人： Hiroshi Yasuda , Berthold Staufer
IPC分类号： H01L21/8238
CPC分类号： H01L27/0623 , H01L21/8249 , H01L29/1004 , H01L29/66287 , H01L29/732 , H01L29/7833
摘要： A process of forming an integrated circuit containing a bipolar transistor and an MOS transistor, by forming a base layer of the bipolar transistor using a non-selective epitaxial process so that the base layer has a single crystalline region on a collector active area and a polycrystalline region on adjacent field oxide, and concurrently implanting the MOS gate layer and the polycrystalline region of the base layer, so that the base-collector junction extends into the substrate less than one-third of the depth of the field oxide, and vertically cumulative doping density of the polycrystalline region of the base layer is between 80 percent and 125 percent of a vertically cumulative doping density of the MOS gate. An integrated circuit containing a bipolar transistor and an MOS transistor formed by the described process.
摘要翻译：通过使用非选择性外延工艺形成双极型晶体管的基极层，使得基极层在集电极有源区域上具有单一结晶区域和多晶硅层，形成包含双极晶体管和MOS晶体管的集成电路的工艺区域，并且同时注入基极层的MOS栅极层和多晶区域，使得基极 - 集电极结延伸到小于场氧化物深度的三分之一的衬底中，并且垂直累积掺杂基极层的多晶区域的密度在MOS栅极的垂直累积掺杂密度的80％至125％之间。包含双极晶体管和通过所描述的工艺形成的MOS晶体管的集成电路。

64. 发明授权

US08450179B2 Semiconductor device having a first bipolar device and a second bipolar device and method for fabrication 有权
标题翻译：具有第一双极器件和第二双极器件的半导体器件及其制造方法
公开(公告)号：US08450179B2
公开(公告)日：2013-05-28
申请号：US11670729
申请日：2007-02-02
申请人： Badih El-Kareh , Hiroshi Yasuda , Scott Balster
发明人： Badih El-Kareh , Hiroshi Yasuda , Scott Balster
IPC分类号： H01L21/331
CPC分类号： H01L29/7378 , H01L21/8222 , H01L21/8249 , H01L27/0825 , H01L29/66242
摘要： A method for fabricating a semiconductor device having a first and second bipolar devices of the same dopant type includes: depositing a dielectric layer over a semiconductor layer, depositing a gate conductor layer over the dielectric layer, defining base regions of both bipolar devices, removing the gate conductor layer and dielectric layer in the base regions, depositing a base layer on the gate conductor layer and on the exposed semiconductor layer in the base regions, depositing an insulating layer over the base layer, forming a photoresist layer and defining emitter regions of both bipolar devices, removing the photoresist layer in the emitter regions thereby forming two emitter windows, masking the emitter window of the first bipolar device and exposing the base layer in the base region of the second bipolar device to an additional emitter implant through the associated emitter window.
摘要翻译：一种用于制造具有相同掺杂剂类型的第一和第二双极器件的半导体器件的方法包括：在半导体层上沉积介电层，在电介质层上沉积栅极导体层，限定两个双极器件的基极区域，栅极导体层和电介质层，在栅极导体层和基极区域的暴露的半导体层上沉积基底层，在基底层上沉积绝缘层，形成光致抗蚀剂层并限定两者的发射极区域去除发射极区域中的光致抗蚀剂层，从而形成两个发射器窗口，掩蔽第一双极器件的发射极窗口，并将第二双极器件的基极区域中的基极层通过相关的发射极窗口暴露于另外的发射体注入。

65. 发明申请

US20110057289A1 Ultrashallow Emitter Formation Using ALD and High Temperature Short Time Annealing 有权
标题翻译：使用ALD和高温短时退火的超短发射体形成
公开(公告)号：US20110057289A1
公开(公告)日：2011-03-10
申请号：US12718142
申请日：2010-03-05
申请人： Rick L. Wise , Hiroshi Yasuda
发明人： Rick L. Wise , Hiroshi Yasuda
IPC分类号： H01L29/73 , H01L21/331
CPC分类号： H01L29/36 , H01L21/02063 , H01L21/2254 , H01L29/66242 , H01L29/66272 , H01L29/73 , H01L29/7325
摘要： An integrated circuit containing a bipolar transistor including an emitter diffused region with a peak doping density higher than 1·1020 atoms/cm3, and an emitter-base junction less than 40 nanometers deep in a base layer. A process of forming the bipolar transistor, which includes forming an emitter dopant atom layer between a base layer and an emitter layer, followed by a flash or laser anneal step to diffuse dopant atoms from the emitter dopant atom layer into the base layer.
摘要翻译：一种包含双极晶体管的集成电路，其包括具有高于1×1020原子/ cm3的峰值掺杂密度的发射极扩散区域，以及在基极层中小于40纳米深的发射极 - 基极结。一种形成双极晶体管的工艺，其包括在基极层和发射极层之间形成发射极掺杂剂原子层，随后进行闪光或激光退火步骤，以将掺杂剂原子从发射极掺杂剂原子层扩散到基底层中。

66. 发明授权

US07772057B2 Method of fabricating an integrated circuit with gate self-protection, and an integrated circuit with gate self-protection 有权
标题翻译：具有栅极自保护的集成电路的制造方法和具有栅极自保护的集成电路
公开(公告)号：US07772057B2
公开(公告)日：2010-08-10
申请号：US11470760
申请日：2006-09-07
申请人： Badih El-Kareh , Scott Gerard Balster , Hiroshi Yasuda , Manfred Schiekofer
发明人： Badih El-Kareh , Scott Gerard Balster , Hiroshi Yasuda , Manfred Schiekofer
IPC分类号： H01L21/337
CPC分类号： H01L27/0623 , H01L21/8249 , H01L27/0251 , H01L27/0705
摘要： An integrated circuit with gate self-protection comprises a MOS device and a bipolar device, wherein the integrated circuit further comprises a semiconductor layer with electrically active regions in which and on which the MOS device and the bipolar device are formed and electrically inactive regions for isolating the electrically active regions from each other. The MOS device comprises a gate structure and a body contacting structure, wherein the body contacting structure is formed of a base layer deposited in a selected region over an electrically active region of the semiconductor layer, and the body contacting structure is electrically connected with the gate structure. The base layer forming the body contacting structure also forms the base of the bipolar device. The present invention further relates to a method for fabricating such an integrated circuit.
摘要翻译：具有栅极自保护的集成电路包括MOS器件和双极器件，其中所述集成电路还包括具有电活性区域的半导体层，在其上形成MOS器件和双极器件，并且在其上形成用于隔离的电无活性区域电活性区域彼此。 MOS器件包括栅极结构和体接触结构，其中所述体接触结构由沉积在所述半导体层的电活性区域上的选定区域中的基底层形成，并且所述体接触结构与所述栅极电连接结构体。形成身体接触结构的基层也形成双极器件的基部。本发明还涉及一种用于制造这种集成电路的方法。

67. 发明授权

US07658774B2 Method of producing lattice body for lead storage battery, and lead storage battery 有权
标题翻译：铅蓄电池晶格体生产方法及铅蓄电池
公开(公告)号：US07658774B2
公开(公告)日：2010-02-09
申请号：US10543699
申请日：2004-02-23
申请人： Kazutoshi Itagawa , Masayoshi Yuki , Hiroshi Yasuda , Yoshihiro Murata
发明人： Kazutoshi Itagawa , Masayoshi Yuki , Hiroshi Yasuda , Yoshihiro Murata
IPC分类号： H01M4/82 , H01M6/00 , H01M4/00 , H01M4/02 , B23P13/00
CPC分类号： H01M4/82 , H01M4/20 , H01M4/685 , H01M4/73 , H01M10/128 , Y10T29/10 , Y10T29/49108 , Y10T29/49114
摘要： A method of producing a grid for a lead-acid battery in accordance with the present invention includes the step of placing lead alloy foil on a base material sheet of a lead-calcium alloy and attaching the lead alloy foil under pressure to the base material sheet. The thickness t of the lead alloy foil, the thickness a of the base material sheet before the attaching, and the thickness b of the composite sheet after the attaching satisfy the relational expression 1.3≦(a+t)/b. The length L of the contact part of rollers with the base material sheet and the lead alloy foil is 10 mm or more.This makes it possible to secure good adhesion of the lead alloy foil to the base material sheet. Also, when this composite sheet is subjected to an expanding process and used as a positive electrode grid, it is possible to provide a lead-acid battery having excellent cycle life characteristics.
摘要翻译：根据本发明的铅酸蓄电池栅格的制造方法包括将铅合金箔放置在铅 - 钙合金的基材片上并将铅合金箔在压力下附着在基材片上的工序。铅合金箔的厚度t，附着前的基材片的厚度a和贴附后的复合片的厚度b满足关系式1.3 <=（a + t）/ b。与基材片和铅合金箔的辊的接触部的长度L为10mm以上。这使得可以确保铅合金箔对基材片的良好粘附性。此外，当该复合片材经受膨胀工艺并用作正极栅极时，可以提供具有优异的循环寿命特性的铅酸电池。

68. 发明申请

US20080292732A1 Plant and Plant Storage Organ Having Glp-1 Derivative Accumulated Therein and Method of Producing the Same 失效
标题翻译：含有Glp-1衍生物的植物和植物储存器官及其生产方法
公开(公告)号：US20080292732A1
公开(公告)日：2008-11-27
申请号：US11662650
申请日：2004-09-14
申请人： Koichi Sugita , Saori Kasahara , Hiroyasu Ebinuma , Fumio Takaiwa , Hiroshi Yasuda , Takahito Jomori , Yuji Hayashi , Akira Tashita
发明人： Koichi Sugita , Saori Kasahara , Hiroyasu Ebinuma , Fumio Takaiwa , Hiroshi Yasuda , Takahito Jomori , Yuji Hayashi , Akira Tashita
IPC分类号： A61K36/00 , C12N15/82 , A01H5/00 , A61P31/10
CPC分类号： A61K38/26 , A23L33/105 , C12N15/8257
摘要： The present invention is to provide a plant and a plant storage organ thereof in which GLP-1 derivatives are accumulated, and a method of producing them in order to develop a method for ingesting orally GLP-1 derivatives at a low cost and to make use of it in diabetic treatment. A transgenic plant or a plant storage organ thereof in which GLP-1 derivatives are accumulated cleavable with a digestive enzyme is produced by a method comprising: integrating into a vector a linked GLP-1s-DNA which comprises tandem repeated “n” DNAs (“n” being an integer of 3 or more) encoding a GLP-1 derivative consisting of GLP-1 (7-36) or of an amino acid sequence of GLP-1 (7-36) in which one or a few amino acids are deleted, substituted and/or added, and C-terminal consists of Arg or Lys, and having GLP-1 activity; introducing the vector into a plant cell; and redifferentiating the obtained transformant. The transgenic plant and the plant storage organ are useful as a pharmaceutical composition or a food or drink for treating or preventing diabetes.
摘要翻译：本发明提供一种其中积聚有GLP-1衍生物的植物和植物贮藏器官及其生产方法，以便开发低成本摄取口服GLP-1衍生物的方法并使用的糖尿病治疗。 GLP-1衍生物可以用消化酶积聚可切割的转基因植物或植物贮藏器官是通过以下方法产生的：将连接的GLP-1s-DNA整合到载体中，所述连接的GLP-1s-DNA包含串联重复的“n”DNA（“ 编号由GLP-1（7-36）或GLP-1（7-36）的氨基酸序列组成的GLP-1衍生物的n“为3以上的整数，其中一个或几个氨基酸为缺失，取代和/或添加，C-末端由Arg或Lys组成，具有GLP-1活性; 将载体导入植物细胞; 并对所得转化体进行重新分化。转基因植物和植物贮藏器官可用作药物组合物或用于治疗或预防糖尿病的食物或饮料。

69. 发明授权

US07382372B2 Apparatus and method for creating moving picture 有权
标题翻译：用于创建动态图像的装置和方法
公开(公告)号：US07382372B2
公开(公告)日：2008-06-03
申请号：US10565513
申请日：2004-07-22
申请人： Koichi Emura , Shuji Morii , Hiroshi Yasuda , Terumasa Aoki
发明人： Koichi Emura , Shuji Morii , Hiroshi Yasuda , Terumasa Aoki
IPC分类号： G06T15/00
CPC分类号： G06T13/00 , G06T2213/04
摘要： The present invention extracts information related to rendering from structured scenario description 101 that describes information related to objects and the rendering, extracts a rendering setup corresponding to information related to the extracted rendering from rendering knowledge base 109, extracts a moving picture corresponding to the objects described in structured scenario description 101 from moving picture component database 106 and produces rendering on the extracted moving picture using the extracted rendering setup, and can thereby create a moving picture subjected to effective rendering.
摘要翻译：本发明从结构化场景描述101中提取与描绘与对象有关的信息和呈现的呈现的信息，从呈现知识库109提取与所提取的呈现相关的信息对应的呈现设置，提取与所描述的对象相对应的运动图像在来自运动图像分量数据库106的结构化场景描述101中，并使用所提取的渲染设置在所提取的运动图像上产生渲染，从而可以创建经过有效渲染的运动图像。

70. 发明申请

US20070184349A1 Lead battery and lead battery storage method 失效
标题翻译：铅电池和铅蓄电池存储方式
公开(公告)号：US20070184349A1
公开(公告)日：2007-08-09
申请号：US10588849
申请日：2005-03-17
申请人： Hiroshi Yasuda , Tsunenori Yoshimura , Mitsuru Kurokawa , Sadao Furuya
发明人： Hiroshi Yasuda , Tsunenori Yoshimura , Mitsuru Kurokawa , Sadao Furuya
IPC分类号： H01M4/68 , H01M10/06 , H01M2/18 , H01M2/16
CPC分类号： H01M2/1653 , H01M2/362 , H01M4/23 , H01M4/667 , H01M4/685 , H01M4/73 , H01M10/06 , H01M10/128 , H01M10/42 , H01M2300/0011 , Y02E60/126
摘要： This invention provides a lead battery that becomes usable by injecting an electrolyte thereinto. The battery includes: positive and negative electrode plates each having a grid comprising a Pb—Ca based alloy; separators that separate the positive electrode plates from the negative electrode plates; the electrolyte comprising sulfuric acid; and a battery container accommodating the positive and negative electrode plates, the separators, and the electrolyte. The battery container is sealed, and part of the positive and negative electrode plates is immersed in the electrolyte. The height Y0 of the positive and negative electrode plates and the distance Y1 from the bottom of the positive and negative electrode plates to the level of the electrolyte satisfy the relation: 15≦Y1/Y0×100≦60.
摘要翻译：本发明提供一种通过向其中注入电解质而可用的铅电池。电池包括：正极板和负极板，每个板具有包含Pb-Ca基合金的栅格; 将正极板与负极板分离的分离器; 所述电解质包含硫酸; 以及容纳正极板和负极板，隔板和电解质的电池容器。将电池容器密封，将正极板和负极板的一部分浸入电解液中。正极板和负极板的高度Y 0 <0>和从正极板和负极板的底部到电解液层的距离Y 1 <1>满足以下关系： <？in-line-formula description =“In-line Formulas”end =“lead”？> 15 <= Y / Y x100 <= 60。？in-line-formula description =“In-line Formulas”end =“tail”？>

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