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61. 发明授权

US08129802B2 Integrated micro electro-mechanical system and manufacturing method thereof 有权
标题翻译：集成微机电系统及其制造方法
公开(公告)号：US08129802B2
公开(公告)日：2012-03-06
申请号：US12216359
申请日：2008-07-02
申请人： Hiroshi Fukuda , Tsukasa Fujimori , Natsuki Yokoyama , Yuko Hanaoka , Takafumi Matsumura
发明人： Hiroshi Fukuda , Tsukasa Fujimori , Natsuki Yokoyama , Yuko Hanaoka , Takafumi Matsumura
IPC分类号： H01L29/84
CPC分类号： B81C1/00246 , B81B2201/0235 , B81B2201/0264 , B81C2203/0714 , B81C2203/0742
摘要： In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric.
摘要翻译：在半导体集成电路（CMOS等）和微机器单片集成在半导体基板上的集成MEMS的制造技术中，能够制造集成MEMS而不使用与正常制造不同的特殊工艺的技术提供了半导体集成电路的技术。通过使用CMOS集成电路工艺与集成电路一起形成MEMS结构。例如，当形成加速度传感器时，通过使用CMOS互连技术形成由可移动质量块，弹性梁和固定梁构成的结构。此后，通过使用CMOS工艺蚀刻层间电介质等以形成空腔。然后，用电介质密封蚀刻中使用的细孔。

62. 发明授权

US08116042B2 Magnetoresistance device 有权
标题翻译：磁阻装置
公开(公告)号：US08116042B2
公开(公告)日：2012-02-14
申请号：US12390557
申请日：2009-02-23
申请人： Susumu Ogawa , Andrew Troup , David Williams , Hiroshi Fukuda
发明人： Susumu Ogawa , Andrew Troup , David Williams , Hiroshi Fukuda
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , H01L43/12
摘要： A device capable of exhibiting the extraordinary magnetoresistance (EMR) effect includes an elongate channel formed of silicon. A conductor comprising heavily doped silicon is connected to the channel along one side of the channel so as to provide a shunt. A gate arrangement including a gate electrode is provided on the channel. Applying a bias of appropriate polarity and sufficient magnitude to the gate electrode results in the formation of an inversion layer in the channel.
摘要翻译：能够呈现非凡磁阻（EMR）效应的装置包括由硅形成的细长通道。包括重掺杂硅的导体沿通道的一侧连接到沟道，以便提供分路。在通道上设置包括栅电极的栅极布置。对栅电极施加适当极性和足够大的偏压导致通道中形成反转层。

63. 发明授权

US07903407B2 Cooling systems and electronic apparatus 有权
标题翻译：冷却系统和电子设备
公开(公告)号：US07903407B2
公开(公告)日：2011-03-08
申请号：US12370651
申请日：2009-02-13
申请人： Hitoshi Matsushima , Hiroshi Fukuda , Tadakatsu Nakajima
发明人： Hitoshi Matsushima , Hiroshi Fukuda , Tadakatsu Nakajima
IPC分类号： H05K7/20
CPC分类号： H05K7/20745
摘要： Temperature variation among electronic apparatuses installed in the data center is reduced, enhancement in reliability of the electronic apparatuses, and increase in service life are achieved, and efficient cooling of an electronic apparatus group is realized. Further, an electronic apparatus with low noise is provided. A front cover is provided on a front surface of an electronic apparatus, and a back cover is provided on a rear surface of it. A supplied air opening is formed at a lower side of the front cover, and an exhaust air opening is formed at an upper side of the back cover. The supplied air opening is connected to a blowing in opening from below the floor level, and the exhaust air opening is connected to a ceiling air duct. The ceiling air duct is provided with a heat exchanger, and indirect heat exchange is performed with external air.
摘要翻译：安装在数据中心的电子设备之间的温度变化减小，电子设备的可靠性提高，使用寿命延长，实现电子设备组的有效冷却。此外，提供了具有低噪声的电子设备。前盖设置在电子设备的前表面上，后盖设置在其后表面上。在前盖的下侧形成供气口，在后盖的上侧形成有排气开口。所供给的空气开口与地板下方的开口连通，排气口与天花板导风管连接。天花板风管设有热交换器，并且用外部空气进行间接热交换。

64. 发明申请

US20100152457A1 Intermediate compound for synthesis of viridiofungin a derivative 审中-公开
公开(公告)号：US20100152457A1
公开(公告)日：2010-06-17
申请号：US12656580
申请日：2010-02-04
申请人： Tatsuya Kato , Nobuaki Kimura , Akemi Mizutani , Toshihiko Makino , Kenichi Kawasaki , Hiroshi Fukuda , Susumu Komiyama , Takuo Tsukuda
发明人： Tatsuya Kato , Nobuaki Kimura , Akemi Mizutani , Toshihiko Makino , Kenichi Kawasaki , Hiroshi Fukuda , Susumu Komiyama , Takuo Tsukuda
IPC分类号： C07D413/06 , C07D317/10 , C07C69/67
CPC分类号： C07D413/06 , C07C231/12 , C07F7/1804 , C07C235/76
摘要： A method whereby a compound having HCV replication inhibitory activity and desired optical activity can be synthesized selectively and at high yield in a small number of steps by using a compound having a specific chiral auxiliary as a starting compound is provided.A compound represented by the formula (1-8): wherein Y represents a group represented by the following formula: Q represents a protected carbonyl group; D represents —(CH2)m—R′, etc.; and n represents an integer of 0 to 10.

65. 发明授权

US07678501B2 Storage battery manufacturing method which uses a polar plate having a foamed-metal electrode substrate and joins a current collector to the electrode substrate, and storage battery obtained through the manufacturing method 有权
标题翻译：使用具有发泡金属电极基板的极板与电极基板连接集电体的蓄电池制造方法以及通过制造方法得到的蓄电池
公开(公告)号：US07678501B2
公开(公告)日：2010-03-16
申请号：US11393003
申请日：2006-03-30
申请人： Kei Tomihara , Kazuki Hamasaki , Yoichiri Shibata , Takuya Okamoto , Kenji Yamato , Etsuya Fujisaka , Hiroshi Fukuda
发明人： Kei Tomihara , Kazuki Hamasaki , Yoichiri Shibata , Takuya Okamoto , Kenji Yamato , Etsuya Fujisaka , Hiroshi Fukuda
IPC分类号： H01M2/26 , H01M10/04 , H01M4/66 , H01M4/80
CPC分类号： H01M4/661 , H01M2/22 , H01M2/26 , H01M4/742 , H01M4/808 , H01M10/0422 , Y10T29/49108
摘要： In the present invention, the electrode assembly is first formed, and then a tab portion is formed by compressing an active material unfilled portion in an electrode having a foamed-metal electrode substrate (Tab Portion Formation Step). Accordingly, in the manufacturing method of the present invention, even if winding misalignment is created in which the edge of the separator is located adjacent to one edge of the active material unfilled portion during the formation of the electrode assembly, the misaligned portion of the separator is pushed in the width direction of the electrode together with the active material unfilled portion when the compression is applied in the Tab Portion Formation Step. Herewith, it is less likely to tuck a part of the separator between the tab portion and the current collector when the current collector is joined in the Current Collector Joining Step.
摘要翻译：在本发明中，首先形成电极组件，然后通过在具有发泡金属电极基板的电极（Tab部分形成步骤）中压缩活性材料未填充部分而形成凸片部分。因此，在本发明的制造方法中，即使在形成电极组件期间产生卷绕不对准，其中隔板的边缘位于与活性材料未填充部分的一个边缘相邻的位置，分离器的未对准部分当在片部分形成步骤中施加压缩时，与活性材料未填充部分一起在电极的宽度方向上推动。因此，当集电体在集电体接合步骤中接合时，不太可能在片状部和集电体之间收缩部分隔板。

66. 发明授权

US07670861B2 Controlling stress in MEMS structures 有权
标题翻译：控制MEMS结构中的应力
公开(公告)号：US07670861B2
公开(公告)日：2010-03-02
申请号：US11698023
申请日：2007-01-26
申请人： Yuko Hanaoka , Tsukasa Fujimori , Hiroshi Fukuda
发明人： Yuko Hanaoka , Tsukasa Fujimori , Hiroshi Fukuda
IPC分类号： H01L21/00 , H01L21/44 , H01L21/461
CPC分类号： B81C1/00246 , B81C2203/0735 , G01L9/0042 , G01L9/0073 , H01L21/32053
摘要： The objects of the present invention are to form MEMS structures of which stress is controlled while maintaining the performance of high-performance LSI, to integrate MEMS Structures and LSI on a single chip, to electrically and chemically protect the MEMS structure and to reduce the stress of the whole movable part of the MEMS structure. To achieve the above objects, a silicide film formable at a low temperature is used for the MEMS structure. The temperature at the silicide film deposition T1 is selected optionally with reference the heat treatment temperature T2 and the pseudo-crystallization temperature T3. T2, the temperature of manufacturing process after the silicide film deposition, is determined does not cause the degradation of the characteristics of the high-performance LSI indispensable. Thus, the residual stress of the MEMS structures may be controlled.
摘要翻译：本发明的目的是形成在保持高性能LSI的性能的同时控制应力的MEMS结构，将MEMS结构和LSI集成在单个芯片上，以电化学和化学保护MEMS结构并降低应力的MEMS结构的整个可移动部分。为了实现上述目的，在MEMS结构中使用了可在低温下形成的硅化物膜。可选地参考热处理温度T2和假晶化温度T3来选择硅化物膜沉积T1处的温度。 T2，硅化物膜沉积后的制造工艺的温度被确定不会导致高性能LSI的特性劣化是不可缺少的。因此，可以控制MEMS结构的残余应力。

67. 发明申请

US20090303639A1 MAGNETORESISTANCE DEVICE 有权
标题翻译：磁阻器件
公开(公告)号：US20090303639A1
公开(公告)日：2009-12-10
申请号：US12390557
申请日：2009-02-23
申请人： Susumu OGAWA , Andrew Troup , David Williams , Hiroshi Fukuda
发明人： Susumu OGAWA , Andrew Troup , David Williams , Hiroshi Fukuda
IPC分类号： G11B5/33 , H01L29/82 , H01L21/265
CPC分类号： H01L43/08 , H01L43/12
摘要： A device capable of exhibiting the extraordinary magnetoresistance (EMR) effect includes an elongate channel formed of silicon. A conductor comprising heavily doped silicon is connected to the channel along one side of the channel so as to provide a shunt. A gate arrangement including a gate electrode is provided on the channel. Applying a bias of appropriate polarity and sufficient magnitude to the gate electrode results in the formation of an inversion layer in the channel.
摘要翻译：能够呈现非凡磁阻（EMR）效应的装置包括由硅形成的细长通道。包括重掺杂硅的导体沿通道的一侧连接到沟道，以便提供分路。在通道上设置包括栅电极的栅极布置。对栅电极施加适当极性和足够大的偏压导致通道中形成反转层。

68. 发明申请

US20090064785A1 Integrated micro electro-mechanical system and manufacturing method thereof 有权
标题翻译：集成微机电系统及其制造方法
公开(公告)号：US20090064785A1
公开(公告)日：2009-03-12
申请号：US12216359
申请日：2008-07-02
申请人： Hiroshi Fukuda , Tsukasa Fujimori , Natsuki Yokoyama , Yuko Hanaoka , Takafumi Matsumura
发明人： Hiroshi Fukuda , Tsukasa Fujimori , Natsuki Yokoyama , Yuko Hanaoka , Takafumi Matsumura
IPC分类号： G01P15/125
CPC分类号： B81C1/00246 , B81B2201/0235 , B81B2201/0264 , B81C2203/0714 , B81C2203/0742
摘要： In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric.
摘要翻译：在半导体集成电路（CMOS等）和微机器单片集成在半导体基板上的集成MEMS的制造技术中，能够制造集成MEMS而不使用与正常制造不同的特殊工艺的技术提供了半导体集成电路的技术。通过使用CMOS集成电路工艺与集成电路一起形成MEMS结构。例如，当形成加速度传感器时，通过使用CMOS互连技术形成由可移动质量块，弹性梁和固定梁构成的结构。此后，通过使用CMOS工艺蚀刻层间电介质等以形成空腔。然后，用电介质密封蚀刻中使用的细孔。

69. 发明申请

US20080308790A1 Organic Siloxane Film, Semiconductor Device Using the Same, Flat Panel Display Device, and Raw Material Liquid 有权
标题翻译：有机硅氧烷膜，使用其的半导体装置，平板显示装置和原料液体
公开(公告)号：US20080308790A1
公开(公告)日：2008-12-18
申请号：US11571017
申请日：2005-06-17
申请人： Daisuke Ryuzaki , Hiroshi Fukuda
发明人： Daisuke Ryuzaki , Hiroshi Fukuda
IPC分类号： B32B17/06 , H01L29/08
CPC分类号： H01L21/02126 , H01L21/02274 , H01L21/02282 , H01L21/3121 , H01L21/3122 , H01L21/76801 , Y10T428/31612
摘要： Disclosed is materials design for prolonging the duration of the low relative dielectric constant of an organic siloxane film having a low relative dielectric constant. Specifically, in an organic siloxane film having a relative dielectric constant of not more than 2.1, the elemental ratio of carbon to silicon in the film is set to not less than 0.10 and not more than 0.55.
摘要翻译：公开了用于延长具有低相对介电常数的有机硅氧烷膜的低相对介电常数持续时间的材料设计。具体而言，在相对介电常数为2.1以下的有机硅氧烷膜中，将膜与硅的元素比设定为0.10以上且0.55以下。

70. 发明申请

US20080293950A1 Production Process of Compound Having Anti-Hcv Action and Intermediate Thereof 失效
标题翻译：具有抗-Hcv作用的化合物及其中间体的制备方法
公开(公告)号：US20080293950A1
公开(公告)日：2008-11-27
申请号：US11884556
申请日：2006-02-16
申请人： Tatsuya Kato , Nobuaki Kimura , Akemi Mizutani , Toshihiko Makino , Kenichi Kawasaki , Hiroshi Fukuda , Susumu Komiyama , Takuo Tsukuda
发明人： Tatsuya Kato , Nobuaki Kimura , Akemi Mizutani , Toshihiko Makino , Kenichi Kawasaki , Hiroshi Fukuda , Susumu Komiyama , Takuo Tsukuda
IPC分类号： C07D277/04 , C07D263/04 , C07C69/00 , C07C69/84
CPC分类号： C07D413/06 , C07C231/12 , C07F7/1804 , C07C235/76
摘要： A method whereby a compound having HCV replication inhibitory activity and desired optical activity can be synthesized selectively and at high yield in a small number of steps by using a compound having a specific chiral auxiliary as a starting compound is provided.A compound represented by the formula (1-8): [wherein Y represents a group represented by the following formula: Q represents a protected carbonyl group; D represents —(CH2)m—R′, etc.; and n represents an integer of 0 to 10].
摘要翻译：提供了通过使用具有特异性手性助剂作为起始化合物的化合物，可以选择性地且以少量步骤以高产率合成具有HCV复制抑制活性和所需光学活性的化合物的方法。由式（1-8）表示的化合物：[其中Y表示由下式表示的基团：Q表示被保护的羰基; D表示 - （CH 2）m -R'等; n表示0〜10的整数。

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