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62. 发明授权

US4771010A Energy beam induced layer disordering (EBILD) 失效
标题翻译：能量束诱导层紊乱（EBILD）
公开(公告)号：US4771010A
公开(公告)日：1988-09-13
申请号：US933666
申请日：1986-11-21
申请人： John E. Epler , Robert D. Burnham
发明人： John E. Epler , Robert D. Burnham
IPC分类号： H01S5/00 , H01L21/18 , H01L21/20 , H01L21/24 , H01L21/263 , H01L21/268 , H01S5/20 , H01S5/34 , H01S5/40 , H01L21/265
CPC分类号： H01S5/20 , H01L21/182 , H01L21/24 , H01L21/2636 , H01S5/2059 , H01S5/3428 , H01S5/4031
摘要： A novel energy beam induced layer disordering (EBILD) process is used to (a) locally melt in a scanned pattern regions of a solid state semiconductor heterostructure to produce an alloy of intermediate composition having different optical properties and/or (b) incorporating significantly large amounts of an impurity, present in an encapsulation surface layer of a solid state semiconductor heterostructure, into regions of the heterostructure via absorption of the impurity into liquid alloy melt to form regions having different optical and/or electrical properties and (c) thereafter optionally applying IID to enlarge or extend the disordered/as-grown boundaries of the initially melted region. As a direct write analogue to surface initiated impurity induced disordering (IID), EBILD is a flexible and viable process with high importance for continuous reproducibility and high yield in the fabrication of optoelectronic devices and thin film electronic and optoelectronic circuitry. Characterized in its simplest terms, the method of impurity incorporation contemplated by this invention provides such incorporation from a solid phase impurity source using an energy beam liquid phase technique to bring about absorption of the impurity with underlying constituents in a desired pattern to produce regions that may be disordered and possess different electrical properties or optical properties or both compared to regions not part of the scanned pattern.
摘要翻译：使用新颖的能量束诱导层无序（EBILD）工艺来（a）在固态半导体异质结构的扫描图案区域中局部熔化，以产生具有不同光学性质的中间组分的合金和/或（b）结合显着大存在于固态半导体异质结构的封装表面层中的杂质的量通过将杂质吸收到液态合金熔体中而形成具有不同光学和/或电特性的区域，并且（c）随后任选应用 IID以扩大或扩展初始熔化区域的无序/生长边界。作为直接写入类似于表面引发的杂质诱导无序（IID）的方法，EBILD是一种灵活而可行的方法，对于光电子器件和薄膜电子和光电子电路的连续重现性和高产率具有重要意义。特征在于其最简单的术语，本发明考虑的杂质掺入方法使用能量束液相技术从固相杂质源提供这种掺入，以使所需杂质与所需图案的底层组分吸收，从而产生可能无序且具有不同的电性能或光学性质，或者与不是扫描图案的一部分的区域相比。

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