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61. 发明授权

US07193290B2 Semiconductor component and a method for producing the same 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US07193290B2
公开(公告)日：2007-03-20
申请号：US10479563
申请日：2002-07-06
申请人： Hubert Benzel , Heribert Weber , Frank Schaefer
发明人： Hubert Benzel , Heribert Weber , Frank Schaefer
IPC分类号： H01L31/058
CPC分类号： G01N27/121
摘要： A semiconductor component, such as a humidity sensor, which has a semiconductor substrate, such as, for example, made of silicon, a first electrode and a second electrode and at least one first layer that is accessible for a medium acting from the outside on the semiconductor component, the first layer being arranged at least partially between the first and the second electrode. To reduce the costs for producing the semiconductor component the first layer has pores into which the medium reaches at least partially.
摘要翻译：诸如湿度传感器的半导体部件，其具有例如由硅制成的半导体衬底，第一电极和第二电极以及至少一个第一层，该第一层可从外部作用的介质半导体部件，第一层至少部分地布置在第一和第二电极之间。为了降低制造半导体部件的成本，第一层具有至少部分介质到达的孔。

62. 发明申请

US20060057816A1 Sensor element with trenched cavity 有权
标题翻译：带沟槽的传感器元件
公开(公告)号：US20060057816A1
公开(公告)日：2006-03-16
申请号：US11223592
申请日：2005-09-08
申请人： Hubert Benzel , Stefan Finkbeiner , Matthias Illing , Frank Schaefer , Simon Armbruster , Gerhard Lammel , Christoph Schelling , Joerg Brasas
发明人： Hubert Benzel , Stefan Finkbeiner , Matthias Illing , Frank Schaefer , Simon Armbruster , Gerhard Lammel , Christoph Schelling , Joerg Brasas
IPC分类号： H01L21/76
CPC分类号： G01L9/0045 , B81B2203/0315 , B81C1/00182 , G01P15/0802
摘要： A micromechanical sensor element and a method for the production of a micromechanical sensor element that is suitable, for example in a micromechanical component, for detecting a physical quantity. Provision is made for the sensor element to include a substrate, an access hole and a buried cavity, at least one of the access holes and the cavity being produced in the substrate by a trench etching and/or, in particular, an isotropic etching process. The trench etching process includes different trenching (trench etching) steps which may be divided into a first phase and a second phase. Thus, in the first phase, at least one first trenching step is carried out in which, in a predeterminable first time period, material is etched out of the substrate and a depression is produced. In that trenching step, a typical concavity is produced in the wall of the depression. A passivation process is then carried out in that first phase, in which the concavity produced in the walls of the depression by the first trenching step is covered with a passivation material. The first trenching step and the first passivation process may be carried out repeatedly in alternating succession within the first phase, with the result that a typical corrugation is obtained on the walls of the depression so produced. In the second phase of the trench etching process, the cavity is produced through the at least one access hole produced by the depression, by carrying out a second trenching step of a predetermined second time period that is distinctly longer in comparison with the first time period.
摘要翻译：微机械传感器元件和用于生产微机械传感器元件的方法，其适用于例如微机械部件中，用于检测物理量。为传感器元件提供包括基板，进入孔和埋入空腔的设置，通过沟槽蚀刻和/或特别地，各向同性蚀刻工艺在基板中产生至少一个访问孔和空腔。沟槽蚀刻工艺包括可分为第一相和第二相的不同的开沟（沟槽蚀刻）步骤。因此，在第一阶段中，执行至少一个第一开沟步骤，其中在可预定的第一时间段内将材料从衬底中蚀刻出来并产生凹陷。在挖沟步骤中，在凹陷的壁上产生典型的凹陷。然后在第一阶段进行钝化处理，其中通过第一开挖步骤在凹陷的壁中产生的凹陷被钝化材料覆盖。第一开沟步骤和第一钝化工艺可以在第一阶段内连续交替重复进行，结果是在如此制造的凹陷的壁上获得典型的波纹。在沟槽蚀刻工艺的第二阶段，通过执行与第一时间段相比明显更长的预定第二时间段的第二开沟步骤，通过由凹陷产生的至少一个访问孔产生空腔。

63. 发明申请

US20060037932A1 Method and micromechanical component 审中-公开
标题翻译：方法和微机械部件
公开(公告)号：US20060037932A1
公开(公告)日：2006-02-23
申请号：US10529425
申请日：2003-02-27
申请人： Gerhard Lammel , Frank Schaefer , Heribert Weber , Stefan Finkbeiner
发明人： Gerhard Lammel , Frank Schaefer , Heribert Weber , Stefan Finkbeiner
IPC分类号： C23F1/00
CPC分类号： B81C1/00476 , B81B2201/12 , B81B2203/0118 , B81C2201/0109 , B81C2201/0115
摘要： A manufacturing method and a micromechanical component are provided in which porous silicon is used as sacrificial layer and a functional layer is exposed by etching off the sacrificial layer.
摘要翻译：提供了制造方法和微机械部件，其中使用多孔硅作为牺牲层，并且通过蚀刻除去牺牲层而暴露功能层。

64. 发明申请

US20050016288A1 Micromechanical apparatus, pressure sensor, and method 审中-公开
标题翻译：微机械装置，压力传感器和方法
公开(公告)号：US20050016288A1
公开(公告)日：2005-01-27
申请号：US10853793
申请日：2004-05-25
申请人： Joerg Muchow , Andreas Junger , Hubert Benzel , Juergen Nitsche , Frank Schaefer , Andreas Duell , Heinz-Georg Vossenberg , Christoph Schelling
发明人： Joerg Muchow , Andreas Junger , Hubert Benzel , Juergen Nitsche , Frank Schaefer , Andreas Duell , Heinz-Georg Vossenberg , Christoph Schelling
IPC分类号： B81B3/00 , B81C1/00 , G01L9/00
CPC分类号： B81C1/00158 , B81B2201/0264 , B81B2203/0315 , B81C2201/0115 , G01L9/0042
摘要： A micromechanical apparatus, a pressure sensor, and a method, a closed cavity being provided beneath a membrane, the membrane having a greater thickness in a first membrane region than in a second membrane region.
摘要翻译：一种微机械装置，压力传感器和方法，在膜下方设置闭合腔，所述膜在第一膜区域中具有比在第二膜区域中更大的厚度。

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