专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明申请

US20080249511A1 In Situ Blood Vessel and Aneurysm Treatment 有权
标题翻译：原位血管和动脉瘤治疗
公开(公告)号：US20080249511A1
公开(公告)日：2008-10-09
申请号：US12132355
申请日：2008-06-03
申请人： Jack Chu , Brian Raze
发明人： Jack Chu , Brian Raze
IPC分类号： A61M31/00 , A61M25/00
CPC分类号： A61M5/00 , A61L31/16
摘要： Treatment of aneurysmal blood vessels with local delivery of therapeutic agents thereby reduces or lessens the severity of an aneurysm, and, where used in conjunction with the placement of an excluding device, provides for more rapid recovery of the blood vessel from any disturbance occurring during placement of the excluding device. Therapeutic agents are placed in the aneurysmal site in a time-release carrier medium, such that the therapeutic agent is released into the aneurysmal site over a period of time without the need to provide systemic introduction of the therapeutic agent. The carrier may be introduced through the patient's dermis, such as with the use of a laparoscope, or intravascularly, through the use of a catheter. The carrier may be in a solid matrix, viscous liquid or liquid form.
摘要翻译：用局部递送治疗剂治疗动脉瘤血管，从而降低或减轻动脉瘤的严重程度，并且在与排除装置的放置一起使用时，可以从放置期间发生的任何干扰提供更快速的血管恢复的排除设备。将治疗剂置于时间释放载体培养基的动脉瘤部位，使得治疗剂在一段时间内释放到动脉瘤部位，而不需要提供治疗剂的全身引入。可以通过使用导管将载体例如通过使用腹腔镜或血管内引入患者真皮中。载体可以是固体基质，粘稠液体或液体形式。

62. 发明申请

US20080221660A1 Platelet Gel for Treatment of Aneurysms 审中-公开
标题翻译：用于治疗动脉瘤的血小板凝胶
公开(公告)号：US20080221660A1
公开(公告)日：2008-09-11
申请号：US12045909
申请日：2008-03-11
申请人： Jack Chu , Jonathan Morris , Josiah Wilcox , Brian Fernandes
发明人： Jack Chu , Jonathan Morris , Josiah Wilcox , Brian Fernandes
IPC分类号： A61F2/82
CPC分类号： A61L27/3641 , A61L27/3616 , A61L27/3645 , A61L27/507 , A61L27/54 , A61L2300/406 , A61L2300/414 , A61L2300/43 , A61L2300/434
摘要： Methods for ameliorating stent graft migration and endoleak using treatment site-specific platelet gel compositions in combination with stent grafts are disclosed. Also disclosed are platelet gel compositions directly to treatment sites before, during or after stent graft implantation. Additional embodiments include medical devices having platelet gel coatings and/or platelet gel delivery devices useful for treating aneurysms.
摘要翻译：公开了使用处理部位特异性血小板凝胶组合物与支架移植物组合来改善支架移植物迁移和内漏的方法。还公开了在支架移植物植入之前，期间或之后直接用于治疗部位的血小板凝胶组合物。另外的实施方案包括具有用于治疗动脉瘤的血小板凝胶涂层和/或血小板凝胶递送装置的医疗装置。

63. 发明申请

US20080108196A1 High Performance FET Devices and Methods Thereof 有权
公开(公告)号：US20080108196A1
公开(公告)日：2008-05-08
申请号：US11971939
申请日：2008-01-10
申请人： Jack Chu
发明人： Jack Chu
IPC分类号： H01L21/336
CPC分类号： H01L29/785 , H01L21/2807 , H01L21/28255 , H01L29/1029 , H01L29/1054 , H01L29/161 , H01L29/41783 , H01L29/42384 , H01L29/42392 , H01L29/4908 , H01L29/4966 , H01L29/66628 , H01L29/66795 , H01L29/778 , H01L29/7787 , H01L29/7842 , H01L29/78642 , H01L29/78648 , H01L29/78684 , H01L29/78696
摘要： Structure and methods of fabrication are disclosed for an enhanced FET devices in which dopant impurities are prevented from diffusing through the gate insulator. The structure comprises a Si:C, or SiGe:C, layer which is sandwiched between the gate insulator and a layer which is doped with impurities in order to provide a preselected workfunction. It is further disclosed how this, and further improvements for FET devices, such as raised source/drain and multifaceted gate on insulator, MODFET on insulator are integrated with strained Si based layer on insulator technology.

64. 发明申请

US20070246753A1 Metal gated ultra short MOSFET devices 有权
标题翻译：金属门极超短MOSFET器件
公开(公告)号：US20070246753A1
公开(公告)日：2007-10-25
申请号：US11407473
申请日：2006-04-20
申请人： Jack Chu , Bruce Doris , Meikei Ieong , Jing Wang
发明人： Jack Chu , Bruce Doris , Meikei Ieong , Jing Wang
IPC分类号： H01L29/76
CPC分类号： H01L29/7838 , H01L21/28017 , H01L29/105
摘要： MOSFET devices suitable for operation at gate lengths less than about 40 nm, and methods of their fabrication is being presented. The MOSFET devices include a ground plane formed of a monocrystalline Si based material. A Si based body layer is epitaxially disposed over the ground plane. The body layer is doped with impurities of opposite type than the ground plane. The gate has a metal with a mid-gap workfunction directly contacting a gate insulator layer. The gate is patterned to a length of less than about 40 nm, and possibly less than 20 nm. The source and the drain of the MOSFET are doped with the same type of dopant as the body layer. In CMOS embodiments of the invention the metal in the gate of the NMOS and the PMOS devices may be the same metal.
摘要翻译：适用于栅极长度小于约40nm的MOSFET器件及其制造方法。 MOSFET器件包括由单晶Si基材料形成的接地平面。 Si基体层外延地设置在接地平面上。体层掺杂了与地平面相反的杂质。栅极具有中间功能函数的金属，其直接接触栅极绝缘体层。栅极被图案化成小于约40nm，并且可能小于20nm的长度。 MOSFET的源极和漏极掺杂有与体层相同类型的掺杂剂。在本发明的CMOS实施例中，NMOS和PMOS器件的栅极中的金属可以是相同的金属。

65. 发明申请

US20070219627A1 Prosthesis Fixation Apparatus and Methods 有权
标题翻译：假体固定装置及方法
公开(公告)号：US20070219627A1
公开(公告)日：2007-09-20
申请号：US11276877
申请日：2006-03-17
申请人： Jack Chu , Jonathan Morris , James Machek
发明人： Jack Chu , Jonathan Morris , James Machek
IPC分类号： A61F2/06
CPC分类号： A61B17/064 , A61B17/0401 , A61B17/068 , A61B2017/0412 , A61B2017/0427 , A61B2017/0464 , A61B2017/1157 , A61F2/848
摘要： A method of securing a prosthesis placed at a desired site in a passageway of a human body comprises delivering a fastener having a proximal piercing end portion and a distal piercing end portion to a site where a prosthesis having a tubular wall has been placed in the passageway, which has a wall, advancing the proximal piercing end portion beyond the prosthesis, penetrating the proximal piercing end portion into the wall of the passageway without passing the proximal piercing end portion through the tubular wall of the prosthesis, and passing the distal piercing end portion through the tubular wall of the prosthesis and into the wall of the passageway. One surgical fastener delivery apparatus for delivering a surgical fastener to a target site comprises a support having a first end, a second end, and a longitudinal axis and being adapted for placement in a passageway in a human body. A surgical fastener having a first piercing end portion, a second piercing end portion and a central portion extending therebetween and having a longitudinal axis is releasably mounted to the support with the central portion longitudinal axis generally parallel to the support longitudinal axis.
摘要翻译：将放置在人体通道中的期望位置处的假体固定的方法包括将具有近端刺穿端部和远端穿刺端部的紧固件递送到具有管状壁的假体已被放置在通道中的位置，其具有壁，使近端刺穿端部部分超过假体，将近端穿刺端部穿透到通道的壁中，而不使近端刺穿端部穿过假体的管状壁，并且使远端穿刺端部通过假体的管状壁并进入通道的壁。用于将手术紧固件递送到目标部位的一个手术紧固件输送装置包括具有第一端，第二端和纵向轴线并且适于放置在人体内的通道中的支撑件。具有第一穿刺端部，第二刺穿端部和在其间延伸并且具有纵向轴线的中心部分的手术紧固件可释放地安装到支撑件，中心部分纵向轴线大致平行于支撑纵向轴线。

66. 发明申请

US20070218621A1 Integration of strained Ge into advanced CMOS technology 有权
标题翻译：将应变锗融入先进的CMOS技术
公开(公告)号：US20070218621A1
公开(公告)日：2007-09-20
申请号：US11799261
申请日：2007-04-10
申请人： Huiling Shang , Meikei Leong , Jack Chu , Kathryn Guarini
发明人： Huiling Shang , Meikei Leong , Jack Chu , Kathryn Guarini
IPC分类号： H01L21/8238
CPC分类号： H01L21/84 , H01L21/823807 , H01L27/1203 , H01L29/1054 , H01L29/7841
摘要： A structure and method of fabrication for PFET devices in a compressively strained Ge layer is disclosed. The fabrication method of such devices is compatible with standard CMOS technology and it is fully scalable. The processing includes selective epitaxial depositions of an over 50% Ge content buffer layer, a pure Ge layer, and a SiGe top layer. Fabricated buried channel PMOS devices hosted in the compressively strained Ge layer show superior device characteristics relative to similar Si devices.
摘要翻译：公开了一种用于压缩应变Ge层中的PFET器件的结构和方法。这种器件的制造方法与标准CMOS技术兼容，并且具有完全可扩展性。该处理包括超过50％Ge含量缓冲层，纯Ge层和SiGe顶层的选择性外延沉积。承载在压缩应变Ge层中的制造掩埋沟道PMOS器件相对于类似的Si器件显示出优异的器件特性。

67. 发明申请

US20070112423A1 Devices and methods for treatment of venous valve insufficiency 审中-公开
标题翻译：用于治疗静脉瓣膜功能不全的装置和方法
公开(公告)号：US20070112423A1
公开(公告)日：2007-05-17
申请号：US11281769
申请日：2005-11-16
申请人： Jack Chu
发明人： Jack Chu
IPC分类号： A61F2/24
CPC分类号： A61F2/2445 , A61B17/064 , A61B17/0644 , A61B17/068 , A61B2017/0641 , A61B2017/0647 , A61B2017/0649 , A61F2/2475 , A61F2220/0016
摘要： Devices and methods for improvement of functioning of a valve of a subject are disclosed. A device exhibiting an outward bias at its proximal end and an outward bias at its distal end, disposed at an angle to the bias at the proximal end is described. A device having a first arm and a second arm separated by a peak and having shoulders is also described. Alternative embodiments which function to decrease the distance between valve leaflets, having a first arm and a second arm biased toward one another are also disclosed. Several embodiments which may have mirror image ends are also disclosed. Any of the devices may have barbs, umbrella structures, sutures, or a variety of spring elements. Devices may be implanted surgically, percutaneously or subcutaneously. Methods and devices for delivery and deployment of devices are disclosed as well as methods for treatment of a valve of a subject.
摘要翻译：公开了用于改善受试者的阀的功能的装置和方法。描述了在其近端呈现向外偏压的装置和在其远端处的向外偏压，其设置成与近端处的偏压成一定角度。还描述了具有由峰分开并具有肩部的第一臂和第二臂的装置。还公开了用于减小具有彼此偏压的第一臂和第二臂的瓣叶之间的距离的替代实施例。还公开了可以具有镜像端部的几个实施例。任何装置可以具有倒钩，伞形结构，缝合线或各种弹簧元件。手术可手术，经皮或皮下植入装置。公开了用于装置的输送和展开的方法和装置以及用于治疗受试者的瓣膜的方法。

68. 发明申请

US20060001088A1 Strained Si MOSFET on tensile-strained SiGe-on-insulator (SGOI) 失效
标题翻译：拉伸应变SiGe绝缘体上的应变Si MOSFET（SGOI）
公开(公告)号：US20060001088A1
公开(公告)日：2006-01-05
申请号：US10883443
申请日：2004-07-01
申请人： Kevin Chan , Jack Chu , Kern Rim , Leathen Shi
发明人： Kevin Chan , Jack Chu , Kern Rim , Leathen Shi
IPC分类号： H01L21/00 , H01L31/0392
CPC分类号： H01L29/78687 , H01L21/2007 , H01L29/1054 , H01L29/517 , H01L29/66742 , H01L29/7833 , H01L29/7842 , H01L29/78603
摘要： A semiconductor structure for use as a template for forming high-performance metal oxide semiconductor field effect transistor (MOSFET) devices is provided. More specifically, the present invention provides a structure that includes a SiGe-on-insulator substrate comprising a tensile-strained SiGe alloy layer located atop an insulating layer; and a strained Si layer atop the tensile-strained SiGe alloy layer. The present invention also provides a method of forming the tensile-strained SGOI substrate as well as the heterostructure described above. The method of the present invention decouples the preference for high strain in the strained Si layer and the Ge content in the underlying layer by providing a tensile-strained SiGe alloy layer directly atop on an insulating layer. Specifically, the method includes forming a first multilayered structure comprising at least a tensile-strained SiGe alloy layer located above a relaxed SiGe alloy layer, wherein the tensile-strained SiGe alloy contains a lower Ge content than the relaxed SiGe alloy layer; bonding the first multilayered structure to an insulating layer of a second multilayered structure on a surface opposite the relaxed SiGe alloy layer; and removing the relaxed SiGe alloy layer.
摘要翻译：提供了用作形成高性能金属氧化物半导体场效应晶体管（MOSFET）器件的模板的半导体结构。更具体地，本发明提供一种包括绝缘体上硅衬底的结构，其包括位于绝缘层顶部的拉伸应变SiGe合金层; 以及拉伸应变SiGe合金层顶部的应变Si层。本发明还提供了形成拉伸应变SGOI基板以及上述异质结构的方法。本发明的方法通过在绝缘层上直接提供拉伸应变SiGe合金层来分离应变Si层中的高应变和下层中的Ge含量的偏好。具体地说，该方法包括形成至少包含位于松弛SiGe合金层上方的拉伸应变SiGe合金层的第一多层结构，其中拉伸应变SiGe合金含有比松弛SiGe合金层低的Ge含量; 将第一多层结构结合到与松弛SiGe合金层相对的表面上的第二多层结构的绝缘层; 并去除松弛的SiGe合金层。

69. 发明申请

US20050043786A1 Methods and apparatus for treatment of aneurysmal tissue 审中-公开
标题翻译：用于治疗动脉瘤组织的方法和装置
公开(公告)号：US20050043786A1
公开(公告)日：2005-02-24
申请号：US10643649
申请日：2003-08-18
申请人： Jack Chu , Scott Doig , David Brin
发明人： Jack Chu , Scott Doig , David Brin
IPC分类号： A61F2/00 , A61F2/06 , A61F2/88
CPC分类号： A61F2/88 , A61F2250/0067
摘要： Methods and apparatus for aiding aneurysm repair are provided. Such apparatus is constructed to support or bolster the aneurysmal site initially, while contracting if the aneurysmal site shrinks or contracts. The apparatus also supplies a pharmaceutical agent to aid in healing the surrounding aneurysmal tissue. The apparatus may comprise a drug eluting polymer or may have a passive coating which can be selectively deployed by adding an activation agent after deployment. The device can be used alone or in conjunction with a AAA stent graft that isolates the aneurysmal sac from the vascular system.
摘要翻译：提供了辅助动脉瘤修复的方法和装置。这种装置被构造成最初支撑或支撑动脉瘤部位，同时如果动脉瘤部位缩小或收缩则承包。该装置还提供药剂以帮助愈合周围的动脉瘤组织。该装置可以包括药物洗脱聚合物或可以具有被动涂层，其可以在部署之后通过添加活化剂来选择性地部署。该装置可以单独使用或与用于将动脉瘤囊与血管系统隔离的AAA支架移植物结合使用。

70. 发明授权

US4918783A Adjustable wheel structure 失效
标题翻译：可调节车轮结构
公开(公告)号：US4918783A
公开(公告)日：1990-04-24
申请号：US352449
申请日：1989-05-16
申请人： Jack Chu
发明人： Jack Chu
IPC分类号： B60B33/04
CPC分类号： B60B33/04 , Y10T16/182 , Y10T16/193
摘要： An improved adjustable wheel structure mainly adapted for use in a trailing vehicle on which a yacht, boat or motorcycle can be mounted for transportation; the present wheel structure is provided with a special nut member having its inner surface half threaded and half smoothed, and the nut member is able to be adjusted forward or backward so that the threaded inner surface thereof can be selectively engaged with a vertically disposed adjusting screw rod which has a smaller diameter than the central through hole of the slidable nut member so that the wheel structure can be smoothly adjusted in height; as the threaded side of the nut member is adjusted to disengage from the screw rod with the smoothed side thereof in contact with the adjusting screw rod, the wheel structure can be adjusted quickly rather than in stepwise manner.
摘要翻译：一种改进的可调节车轮结构，主要适用于可以安装游艇，船或摩托车运输的尾部车辆; 本车轮结构具有内表面为半螺纹且半平的特殊螺母构件，并且螺母构件能够向前或向后调节，使得其螺纹内表面可选择性地与竖直设置的调节螺钉杆的直径小于可滑动螺母构件的中心通孔，使得轮结构能够在高度上平稳地调节; 由于螺母构件的螺纹侧被调节成与螺杆脱离，其平滑的侧面与调节螺杆接触，可以快速而不是逐步地调节轮结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式