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61. 发明申请

US20060157813A1 Power semiconductor device and method of manufacturing the same 失效
公开(公告)号：US20060157813A1
公开(公告)日：2006-07-20
申请号：US11250441
申请日：2005-10-17
申请人： Wataru Saito , Ichiro Omura
发明人： Wataru Saito , Ichiro Omura
IPC分类号： H01L29/00
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/0638 , H01L29/0878 , H01L29/407 , H01L29/4238 , H01L29/66734 , H01L29/7811
摘要： A power semiconductor device has a first main electrode formed along a surface of a substrate, a first semiconductor layer of first conductive type electrically connected to the first main electrode, a cyclic structure section which is formed on the first semiconductor layer and has second semiconductor layers of first conductive type and third semiconductor layers of second conductive type alternately and cyclically formed along the surface of the substrate, a fourth semiconductor layer of second conductive type selectively formed on a part of the second and third semiconductor layers, a fifth semiconductor layer of first conductive type selectively formed on the fourth semiconductor layer, a second main electrode contacted the fourth and fifth semiconductor layers, a control electrode disposed adjacent via a first insulating film on the second, fourth and fifth semiconductor layers, and a depletion layer blocking section which is formed outside of the cyclic structure section and prevents a depletion layer from spreading outside, wherein the depletion layer blocking section includes a conductive layer formed via a second insulating film in a first trench formed outside of the outermost third semiconductor layer in the cyclic structure section.

62. 发明申请

US20060017096A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20060017096A1
公开(公告)日：2006-01-26
申请号：US10936601
申请日：2004-09-09
申请人： Satoshi Yanagisawa , Satoshi Aida , Shigeo Kouzuki , Hironori Yoshioka , Ichiro Omura , Wataru Saito
发明人： Satoshi Yanagisawa , Satoshi Aida , Shigeo Kouzuki , Hironori Yoshioka , Ichiro Omura , Wataru Saito
IPC分类号： H01L31/113
CPC分类号： H01L29/7811 , H01L29/0661 , H01L29/402 , H01L29/41741 , H01L29/7802
摘要： A semiconductor device is disclosed, which comprises a terminal section formed to surround a device active region. The terminal section includes a trench formed in the semiconductor layer, and a filler filled in the trench. A field plate is extended to above the trench from an electrode of the semiconductor element formed in the device active region.
摘要翻译：公开了一种半导体器件，其包括形成为围绕器件有源区域的端子部分。端子部分包括形成在半导体层中的沟槽和填充在沟槽中的填充物。场板从形成在器件有源区域中的半导体元件的电极延伸到沟槽上方。

63. 发明申请

US20060011915A1 Nitride semiconductor device 失效
标题翻译：氮化物半导体器件
公开(公告)号：US20060011915A1
公开(公告)日：2006-01-19
申请号：US11014869
申请日：2004-12-20
申请人： Wataru Saito , Ichiro Omura
发明人： Wataru Saito , Ichiro Omura
IPC分类号： H01L29/04
CPC分类号： H01L29/402 , H01L29/1066 , H01L29/2003 , H01L29/404 , H01L29/41725 , H01L29/432 , H01L29/517 , H01L29/7786
摘要： A nitride semiconductor device according to one embodiment of the present invention comprises: a non-doped first aluminum gallium nitride (AlxGa1-xN (0≦x≦1)) layer which is formed as a channel layer; a non-doped or n type second aluminum gallium nitride (AlyGa1-yN (0≦x≦1,x
摘要翻译：根据本发明的一个实施方案的氮化物半导体器件包括：非掺杂的第一氮化镓铝（Al x Ga 1-x N）（0 <= x < = 1））层，其形成为沟道层; 非掺杂或n型第二氮化镓铝（Al x Ga 1-y N）（0≤x≤1，x

64. 发明申请

US20050274977A1 Nitride semiconductor device 失效
标题翻译：氮化物半导体器件
公开(公告)号：US20050274977A1
公开(公告)日：2005-12-15
申请号：US10961033
申请日：2004-10-12
申请人： Wataru Saito , Ichiro Omura
发明人： Wataru Saito , Ichiro Omura
IPC分类号： H01L27/06 , H01L29/20 , H01L29/40 , H01L29/417 , H01L29/778 , H01L31/109
CPC分类号： H01L29/404 , H01L24/06 , H01L24/48 , H01L24/49 , H01L27/0605 , H01L29/2003 , H01L29/402 , H01L29/41725 , H01L29/7787 , H01L29/872 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48472 , H01L2924/00014 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2924/00
摘要： The nitride semiconductor device according to one embodiment of the present invention comprises: a silicon substrate; a first aluminum gallium nitride (AlxGa1-xN (0≦x≦1)) layer formed as a channel layer on the silicon substrate in an island shape; and a second aluminum gallium nitride (AlyGa1-yN (0≦y≦1, x≦y)) layer formed as a barrier layer of a first conductive type or i-type on the first aluminum gallium nitride layer.
摘要翻译：根据本发明的一个实施例的氮化物半导体器件包括：硅衬底; 在岛上的硅衬底上形成作为沟道层的第一氮化镓铝（Al x x Ga 1-x N）（0 <= x <= 1））形状; 和形成为阻挡层的第二氮化镓铝（Al x Ga y Ga 1-y N）（0 <= y <= 1，x <= y））在第一氮化镓铝层上的第一导电类型或i型。

65. 发明授权

US06967374B1 Power semiconductor device 失效
标题翻译：功率半导体器件
公开(公告)号：US06967374B1
公开(公告)日：2005-11-22
申请号：US10923743
申请日：2004-08-24
申请人： Wataru Saito , Ichiro Omura
发明人： Wataru Saito , Ichiro Omura
IPC分类号： H01L27/095 , H01L29/06 , H01L29/76 , H01L29/78
CPC分类号： H01L29/7806 , H01L29/0634 , H01L29/7802
摘要： There are provided a power switching element including a first semiconductor layer of a first conductivity type; a plurality of second semiconductor layers of a second conductivity type, which are in a columnar shape, and arranged in the first semiconductor layer at certain intervals in a direction parallel to a layer surface of the first semiconductor layer; a first electrode formed on a surface of one side of the first semiconductor layer, the first electrode being electrically connected with the first semiconductor layer; a plurality of third semiconductor layers selectively formed in a surface region of the other side of the first semiconductor layer, the third semiconductor layers being connected to the second semiconductor layers; a fourth semiconductor layer of the first conductivity type selectively formed in a surface region of the third semiconductor layers; second electrodes formed so as to contact surfaces of the third semiconductor layers and the fourth semiconductor layer; and gate electrodes formed on regions of the first semiconductor layer sandwiched between the adjacent third semiconductor layers, gate dielectric films being inserted between the gate electrodes and the first semiconductor layer, and a Schottky barrier diode in which a cathode is connected to the first electrode of the power switching element, and an anode is connected to the second electrodes of the power switching element.
摘要翻译：提供了包括第一导电类型的第一半导体层的功率开关元件; 多个第二导电类型的第二半导体层，其为柱状，并且在与第一半导体层的层表面平行的方向上以一定间隔配置在第一半导体层中; 第一电极，形成在所述第一半导体层的一侧的表面上，所述第一电极与所述第一半导体层电连接; 选择性地形成在所述第一半导体层的另一侧的表面区域中的多个第三半导体层，所述第三半导体层连接到所述第二半导体层; 选择性地形成在第三半导体层的表面区域中的第一导电类型的第四半导体层; 形成为与第三半导体层和第四半导体层接触的第二电极; 以及栅电极，形成在夹在相邻的第三半导体层之间的第一半导体层的区域上，栅极电介质膜插入在栅电极和第一半导体层之间，肖特基势垒二极管和阴极连接到第一电极的第一电极功率开关元件和阳极连接到功率开关元件的第二电极。

66. 发明申请

US20050189559A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050189559A1
公开(公告)日：2005-09-01
申请号：US10831130
申请日：2004-04-26
申请人： Wataru Saito , Ichiro Omura
发明人： Wataru Saito , Ichiro Omura
IPC分类号： H01L29/808 , H01L21/337 , H01L21/338 , H01L29/20 , H01L29/778 , H01L29/78 , H01L29/812 , H01L31/109
CPC分类号： H01L29/432 , H01L29/1066 , H01L29/2003 , H01L29/402 , H01L29/4236 , H01L29/7786 , H01L29/7787
摘要： A semiconductor device includes: a first semiconductor layer represented by a composition formula AlxGa1-xN(0≦x≦1); a first conductivity type or non-doped second semiconductor layer represented by a composition formula AlyGa1-yN (0≦y≦1, x
摘要翻译：半导体器件包括：由组成式Al x Ga 1-x N（0 <= x <= 1）表示的第一半导体层; 由组成式Al Y 1-y N（0 <= y <= 1，x

67. 发明申请

US20050110042A1 POWER SEMICONDUCTOR DEVICE 有权
标题翻译：功率半导体器件
公开(公告)号：US20050110042A1
公开(公告)日：2005-05-26
申请号：US10967166
申请日：2004-10-19
申请人： Wataru Saito , Ichiro Omura , Hiromichi Ohashi
发明人： Wataru Saito , Ichiro Omura , Hiromichi Ohashi
IPC分类号： H01L29/20 , H01L29/40 , H01L29/417 , H01L29/739 , H01L29/80 , H01L29/861 , H01L31/0336
CPC分类号： H01L29/802 , H01L29/2003 , H01L29/402 , H01L29/417 , H01L29/4175 , H01L29/861
摘要： A power semiconductor device including a non-doped GaN channel layer, an n-type Al0.2Ga0.8N barrier layer formed on the channel layer, a p-type Al0.1Ga0.9N semiconductor layer selectively formed on the barrier layer, a drain electrode positioned at one of both sides of the semiconductor layer and formed on the barrier layer, an insulating film formed on the barrier layer adjacent to the semiconductor layer between at least semiconductor layer and drain electrode, and a field plate electrode formed on the insulating film.
摘要翻译：包括形成在沟道层上的非掺杂GaN沟道层，n型Al 0.2 Ga 0.8 N阻挡层的功率半导体器件，p型Al < 选择性地形成在阻挡层上的半导体层，位于半导体层的两侧之一并形成在阻挡层上的漏电极，形成绝缘膜在至少半导体层和漏电极之间的与半导体层相邻的阻挡层上，以及形成在绝缘膜上的场极板电极。

68. 发明授权

US06809349B2 Power semiconductor device 有权
公开(公告)号：US06809349B2
公开(公告)日：2004-10-26
申请号：US10354048
申请日：2003-01-30
申请人： Masakazu Yamaguchi , Hideaki Ninomiya , Ichiro Omura , Tomoki Inoue
发明人： Masakazu Yamaguchi , Hideaki Ninomiya , Ichiro Omura , Tomoki Inoue
IPC分类号： H01L2974
CPC分类号： H01L29/0696 , H01L29/0619 , H01L29/0839 , H01L29/407 , H01L29/4236 , H01L29/66348 , H01L29/7394 , H01L29/7395 , H01L29/7397
摘要： A power semiconductor device includes trenches disposed in a first base layer of a first conductivity type at intervals to partition main and dummy cells, at a position remote from a collector layer of a second conductivity type. In the main cell, a second base layer of the second conductivity type, and an emitter layer of the first conductivity type are disposed. In the dummy cell, a buffer layer of the second conductivity type is disposed. A gate electrode is disposed, through a gate insulating film, in a trench adjacent to the main cell. A buffer resistor having an infinitely large resistance value is inserted between the buffer layer and emitter electrode. The dummy cell is provided with an inhibiting structure to reduce carriers of the second conductivity type to flow to and accumulate in the buffer layer from the collector layer.

69. 发明授权

US06750508B2 Power semiconductor switching element provided with buried electrode 有权
标题翻译：功率半导体开关元件配有埋电极
公开(公告)号：US06750508B2
公开(公告)日：2004-06-15
申请号：US09892545
申请日：2001-06-28
申请人： Ichiro Omura , Wataru Saito , Tsuneo Ogura , Hiromichi Ohashi , Yoshihiko Saito , Kenichi Tokano
发明人： Ichiro Omura , Wataru Saito , Tsuneo Ogura , Hiromichi Ohashi , Yoshihiko Saito , Kenichi Tokano
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L21/26586 , H01L29/0619 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/404 , H01L29/405 , H01L29/407 , H01L29/408 , H01L29/41741 , H01L29/4236 , H01L29/42368 , H01L29/4238 , H01L29/66734 , H01L29/7397 , H01L29/7722 , H01L29/7811 , H01L29/7813 , H01L29/872 , H01L29/8725
摘要： A semiconductor element of this invention includes a drift layer of a first conductivity type formed on a semiconductor substrate of the first conductivity type, a well layer of a second conductivity type selectively formed in the surface of the drift layer, a source layer of the first conductivity type selectively formed in the surface of the well layer, a trench formed to reach at least the inside of the drift layer from the surface of the source layer through the well layer, a buried electrode formed in the trench through a first insulating film, and a control electrode formed on the drift layer, the well layer, and the source layer through a second insulating film.
摘要翻译：本发明的半导体元件包括形成在第一导电类型的半导体衬底上的第一导电类型的漂移层，选择性地形成在漂移层的表面中的第二导电类型的阱层，第一导电类型的源极层选择性地形成在阱层的表面中的导电类型，形成为通过阱层从源极层的表面至少到达漂移层的内部的沟槽;通过第一绝缘膜形成在沟槽中的掩埋电极，以及通过第二绝缘膜形成在漂移层，阱层和源极层上的控制电极。

70. 发明授权

US5438220A High breakdown voltage semiconductor device 失效
标题翻译：高击穿电压半导体器件
公开(公告)号：US5438220A
公开(公告)日：1995-08-01
申请号：US085056
申请日：1993-07-02
申请人： Akio Nakagawa , Norio Yasuhara , Tomoko Matsudai , Yoshihiro Yamaguchi , Ichiro Omura , Hideyuki Funaki
发明人： Akio Nakagawa , Norio Yasuhara , Tomoko Matsudai , Yoshihiro Yamaguchi , Ichiro Omura , Hideyuki Funaki
IPC分类号： H01L21/336 , H01L21/74 , H01L21/762 , H01L27/06 , H01L27/092 , H01L27/12 , H01L29/06 , H01L29/08 , H01L29/40 , H01L29/739 , H01L29/74 , H01L29/745 , H01L29/749 , H01L29/78 , H01L29/786 , H01L29/861
CPC分类号： H01L29/404 , H01L21/74 , H01L21/76264 , H01L21/76297 , H01L27/0623 , H01L27/0922 , H01L27/1203 , H01L29/0834 , H01L29/402 , H01L29/405 , H01L29/407 , H01L29/408 , H01L29/66772 , H01L29/7394 , H01L29/7436 , H01L29/7455 , H01L29/749 , H01L29/7824 , H01L29/7835 , H01L29/78624 , H01L29/8611 , H01L21/76275 , H01L21/76286 , H01L29/78603 , H01L2924/0002
摘要： A high breakdown voltage semiconductor device includes a semiconductor substrate, an insulating layer formed on the semiconductor substrate, an active layer formed on the insulating layer and made of a high resistance semiconductor of a first conductivity type, a first impurity region of the first conductivity type formed in the active layer, and a second impurity region of a second conductivity type formed in the active layer and spaced apart from the first impurity region by a predetermined distance. The first impurity region is formed of diffusion layers. The diffusion layers are superimposed one upon another and differ in diffusion depth or diffusion window width, or both.
摘要翻译：高耐压半导体器件包括半导体衬底，形成在半导体衬底上的绝缘层，形成在绝缘层上并由第一导电类型的高电阻半导体形成的有源层，第一导电类型的第一杂质区形成在有源层中的第二杂质区和形成在有源层中并与第一杂质区隔开预定距离的第二导电类型的第二杂质区。第一杂质区由扩散层形成。扩散层彼此叠加并且扩散深度或扩散窗宽度不同，或两者均不同。

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