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61. 发明授权

US07901929B2 High voltage nanosecond pulse generator using fast recovery diodes for cell electro-manipulation 有权
标题翻译：高电压纳秒脉冲发生器采用快速恢复二极管进行电池电操作
公开(公告)号：US07901929B2
公开(公告)日：2011-03-08
申请号：US12409707
申请日：2009-03-24
申请人： Andras Kuthi , Martin A. Gundersen
发明人： Andras Kuthi , Martin A. Gundersen
IPC分类号： C12M1/42 , C12M3/00
CPC分类号： H03K17/74 , C12M35/02 , H03K3/57 , H03K5/12
摘要： A pulse generator circuit may include a diode configured to operate as an opening switch, a tank circuit in series with the diode having an admittance that is switchable from a first value to a second value that is different from the first value, and a switching system configured to cause the tank circuit to switch between the first value and the second value. The diode may saturate in less than 100 nanoseconds. A saturable core transformer may operate as a switch that controls the opening of the diode. The pulse generator may generate a plurality of pulses, each having a length of no more than 3 nanoseconds and an amplitude of at least 1 kilovolt. Electrodes may be connected to the pulse generator to deliver the plurality of pulses to biological cells.
摘要翻译：脉冲发生器电路可以包括被配置为作为打开开关操作的二极管，与具有可从第一值切换到不同于第一值的第二值的导纳的二极管串联的储能电路，以及开关系统被配置为使所述储能电路在所述第一值和所述第二值之间切换。二极管可能在小于100纳秒内饱和。可饱和铁芯变压器可以作为控制二极管开路的开关来工作。脉冲发生器可以产生多个脉冲，每个脉冲具有不超过3纳秒的长度和至少1千伏的振幅。电极可以连接到脉冲发生器以将多个脉冲传送到生物细胞。

62. 发明授权

US07767433B2 High voltage nanosecond pulse generator using fast recovery diodes for cell electro-manipulation 有权
标题翻译：高电压纳秒脉冲发生器采用快速恢复二极管进行电池电操作
公开(公告)号：US07767433B2
公开(公告)日：2010-08-03
申请号：US11279697
申请日：2006-04-13
申请人： Andras Kuthi , Martin A. Gundersen
发明人： Andras Kuthi , Martin A. Gundersen
IPC分类号： C12N1/42 , C12M3/00
CPC分类号： H03K17/74 , C12M35/02 , H03K3/57 , H03K5/12
摘要： A pulse generator circuit may include a diode configured to operate as an opening switch, a tank circuit in series with the diode having an admittance that is switchable from a first value to a second value that is different from the first value, and a switching system configured to cause the tank circuit to switch between the first value and the second value. The diode may saturate in less than 100 nanoseconds. A saturable core transformer may operate as a switch that controls the opening of the diode. The pulse generator may generate a plurality of pulses, each having a length of no more than 3 nanoseconds and an amplitude of at least 1 kilovolt. Electrodes may be connected to the pulse generator to deliver the plurality of pulses to biological cells.
摘要翻译：脉冲发生器电路可以包括被配置为作为打开开关操作的二极管，与具有可从第一值切换到不同于第一值的第二值的导纳的二极管串联的储能电路，以及开关系统被配置为使得所述储能电路在所述第一值和所述第二值之间切换。二极管可能在小于100纳秒内饱和。可饱和铁芯变压器可以作为控制二极管开路的开关来工作。脉冲发生器可以产生多个脉冲，每个脉冲具有不超过3纳秒的长度和至少1千伏的振幅。电极可以连接到脉冲发生器以将多个脉冲传送到生物细胞。

63. 发明授权

US07632375B2 Electrically enhancing the confinement of plasma 失效
标题翻译：电加强等离子体的限制
公开(公告)号：US07632375B2
公开(公告)日：2009-12-15
申请号：US11024978
申请日：2004-12-30
申请人： Andras Kuthi , Jisoo Kim , Eric Lenz , Rajindar Dhindsa , Lumin Li , Reza Sadjadi
发明人： Andras Kuthi , Jisoo Kim , Eric Lenz , Rajindar Dhindsa , Lumin Li , Reza Sadjadi
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/32623 , Y10S156/915
摘要： A vacuum plasma processor includes a chamber having a grounded wall and an outlet port. Plasma is excited at a first RF frequency in a chamber region spaced from the wall and outlet port. A structure confines the plasma to the region while enabling gas to flow from the region to the outlet port. RF electric power at a second frequency connected to the confining structure causes the confining structure to be at a potential different from ground to increase the size of a sheath between the plasma and confining structure and increase the confining structure effectiveness. The region includes an electrode connected to ground by a circuit that is series resonant to the first frequency and includes capacitance of the sheath.
摘要翻译：真空等离子体处理器包括具有接地壁和出口的室。等离子体在与壁和出口间隔开的室区域中以第一RF频率激发。结构将等离子体限制在该区域上，同时使气体能够从该区域流出到出口。连接到限制结构的第二频率的RF电力使得限制结构处于不同于地面的电位，以增加等离子体和限制结构之间的护套尺寸，并增加限制结构的有效性。该区域包括通过与第一频率串联谐振并包括护套的电容的电路连接到地的电极。

64. 发明授权

US07611640B1 Minimizing arcing in a plasma processing chamber 有权
标题翻译：最小化等离子体处理室中的电弧
公开(公告)号：US07611640B1
公开(公告)日：2009-11-03
申请号：US11396124
申请日：2006-03-30
申请人： Arthur M Howald , Andras Kuthi , Andrew D. Bailey, III , Butch Berney
发明人： Arthur M Howald , Andras Kuthi , Andrew D. Bailey, III , Butch Berney
IPC分类号： C23F1/00 , H01L21/3065
CPC分类号： H01J37/32477 , H01J37/32623
摘要： A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward a plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.
摘要翻译：公开了一种用于处理基板以在其上形成电子部件的等离子体处理室。等离子体处理室包括在基板处理期间具有朝向等离子体处理室中的等离子体的表面等离子体表面的等离子体面向部件，等离子体面向部件与接地端子电隔离。等离子体处理室还包括耦合到等离子体面向部件的接地装置，接地装置包括设置在等离子体面向部件和接地端子之间的第一电流路径中的第一电阻电路。接地装置还包括设置在等离子体面向部件和接地端子之间的至少一个其它电流通路中的RF滤波器装置，其中选择第一电阻电路的电阻值以基本上消除等离子体和等离子体 - 在处理基板期间面对部件。

65. 发明申请

US20090166326A1 EDGE ELECTRODES WITH DIELECTRIC COVERS 有权
标题翻译：带电介质盖的边缘电极
公开(公告)号：US20090166326A1
公开(公告)日：2009-07-02
申请号：US11758584
申请日：2007-06-05
申请人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi , Yunsang Kim
发明人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi , Yunsang Kim
IPC分类号： C23F1/00
CPC分类号： H01L21/02087 , H01J37/32009 , H01J37/32082 , H01J37/32559 , H01J37/32642 , H01J37/32862 , H01L21/02057 , H01L21/31116 , H01L21/31138 , H01L21/32136
摘要： The embodiments provide apparatus and methods for removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a substrate support configured to receive the substrate. The plasma processing chamber also includes a bottom edge electrode surrounding the substrate support. The bottom edge electrode and the substrate support are electrically isolated from one another by a bottom dielectric ring. A surface of the bottom edge electrode facing the substrate is covered by a bottom thin dielectric layer. The plasma processing chamber further includes a top edge electrode surrounding a top insulator plate opposing the substrate support. The top edge electrode is electrically grounded. A surface of the top edge electrode facing the substrate is covered by a top thin dielectric layer. The top edge electrode and the bottom edge electrode oppose one another and are configured to generate a cleaning plasma to clean the bevel edge of the substrate.
摘要翻译：这些实施例提供用于去除蚀刻副产物，电介质膜和金属膜附近的衬底斜面边缘的设备和方法，以及室内，以避免聚合物副产物和沉积膜的堆积并提高工艺产率。在示例性实施例中，提供了构造成清洁基板的斜边缘的等离子体处理室。等离子体处理室包括被配置为接收衬底的衬底支撑件。等离子体处理室还包括围绕衬底支撑件的底部边缘电极。底部边缘电极和基底支撑件通过底部介电环彼此电隔离。面向基板的底部边缘电极的表面被底部薄的电介质层覆盖。等离子体处理室还包括围绕与衬底支撑件相对的顶部绝缘体板的顶部边缘电极。顶边电极电接地。面向衬底的顶边电极的表面被顶部薄介电层覆盖。顶边电极和下边缘电极彼此相对并且被配置为产生清洁等离子体以清洁衬底的斜边缘。

66. 发明申请

US20090165954A1 ELECTRICALLY ENHANCING THE CONFINEMENT OF PLASMA 失效
标题翻译：电动增强等离子体的浓度
公开(公告)号：US20090165954A1
公开(公告)日：2009-07-02
申请号：US11024978
申请日：2004-12-30
申请人： Andras Kuthi , Jisoo Kim , Eric Lenz , Rajindar Dhindsa , Lumin Li , Reza Sadjadi
发明人： Andras Kuthi , Jisoo Kim , Eric Lenz , Rajindar Dhindsa , Lumin Li , Reza Sadjadi
IPC分类号： H01L21/306 , C23F1/08 , C23C16/54
CPC分类号： H01J37/32623 , Y10S156/915
摘要： A vacuum plasma processor includes a chamber having a grounded wall and an outlet port. Plasma is excited at a first RF frequency in a chamber region spaced from the wall and outlet port. A. structure confines the plasma to the region while enabling gas to flow from the region to the outlet port. RF electric power at a second frequency connected to the confining structure causes the confining structure to be at a potential different from ground to increase the size of a sheath between the plasma and confining structure and increase the confining structure effectiveness. The region includes an electrode connected to ground by a circuit that is series resonant to the first frequency and includes capacitance of the sheath.
摘要翻译：真空等离子体处理器包括具有接地壁和出口的室。等离子体在与壁和出口间隔开的室区域中以第一RF频率激发。 A.结构将等离子体限制在该区域上，同时使气体能够从该区域流出到出口。连接到限制结构的第二频率的RF电力使得限制结构处于不同于地面的电位，以增加等离子体和限制结构之间的护套尺寸，并增加限制结构的有效性。该区域包括通过与第一频率串联谐振并包括护套的电容的电路连接到地的电极。

67. 发明申请

US20080231337A1 Compact subnanosecond high voltage pulse generation system for cell electro-manipulation 有权
标题翻译：紧凑的亚纳秒高电压脉冲发生系统，用于电池电操作
公开(公告)号：US20080231337A1
公开(公告)日：2008-09-25
申请号：US12079017
申请日：2008-03-24
申请人： Pavitra Krishnaswamy , Andras Kuthi
发明人： Pavitra Krishnaswamy , Andras Kuthi
IPC分类号： G06F1/04
CPC分类号： C12M35/02 , A61N1/0408 , A61N1/0412 , A61N1/0452 , A61N1/0456 , A61N1/327 , C12N13/00 , H03K3/537 , H03K3/57 , H03K5/159
摘要： Disclosed are methods and systems for subnanosecond rise time high voltage (HV) electric pulse delivery to biological loads. The system includes an imaging device and monitoring apparatus used for bio-photonic studies of pulse induced intracellular effects. The system further features custom fabricated microscope slide having micro-machined electrodes. A printed circuit board to interface the pulse generator to the micro-machined glass slide having the cell solution. An low-parasitic electronic setup to interface with avalanche transistor-switched pulse generation system. The pc-board and the slide are configured to match the output impedance of the pulse generator which minimizes reflection back into the pulse generator, and minimizes distortion of the pulse shape and pulse parameters. The pc-board further includes a high bandwidth voltage divider for real-time monitoring of pulses delivered to the cell solutions.
摘要翻译：公开了亚纳秒上升时间高压（HV）电脉冲输送到生物负载的方法和系统。该系统包括用于脉冲诱导的细胞内效应的生物光子学研究的成像装置和监测装置。该系统还具有具有微加工电极的定制的显微镜载玻片。将脉冲发生器与具有电池溶液的微加工玻璃板接合的印刷电路板。与雪崩晶体管开关脉冲发生系统接口的低寄生电子设置。印刷电路板和载玻片配置成匹配脉冲发生器的输出阻抗，将脉冲发生器的反射最小化，并使脉冲形状和脉冲参数的失真最小化。印刷电路板还包括一个高带宽分压器，用于实时监测传送到电池解决方案的脉冲。

68. 发明授权

US07326581B2 System, method and apparatus for automatic control of an RF generator for maximum efficiency 有权
标题翻译：用于自动控制RF发生器以最大效率的系统，方法和装置
公开(公告)号：US07326581B2
公开(公告)日：2008-02-05
申请号：US11112334
申请日：2005-04-22
申请人： Thomas W. Anderson , Andras Kuthi
发明人： Thomas W. Anderson , Andras Kuthi
IPC分类号： H01L21/66
CPC分类号： H01L21/67253 , H01L21/67057
摘要： A method of dynamically adjusting a RF generator to an instantaneous resonant frequency of a transducer includes providing an RF input signal from an oscillator to the RF generator and measuring a supply voltage applied to the RF generator. A peak voltage in the RF generator is also measured. A frequency control signal is produced when the peak voltage is not equal to a selected ratio of the supply voltage. The frequency control signal is applied to a frequency control input of the oscillator.
摘要翻译：将RF发生器动态地调节到换能器的瞬时谐振频率的方法包括从RF振荡器向RF发生器提供RF输入信号并测量施加到RF发生器的电源电压。还测量RF发生器中的峰值电压。当峰值电压不等于所选择的电源电压比时，产生频率控制信号。频率控制信号被施加到振荡器的频率控制输入。

69. 发明授权

US07193173B2 Reducing plasma ignition pressure 有权
标题翻译：降低等离子体点火压力
公开(公告)号：US07193173B2
公开(公告)日：2007-03-20
申请号：US10883583
申请日：2004-06-30
申请人： Mark Wiepking , Bradford J. Lyndaker , Andras Kuthi , Andreas Fischer
发明人： Mark Wiepking , Bradford J. Lyndaker , Andras Kuthi , Andreas Fischer
IPC分类号： B23K10/00
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32706
摘要： A method in a plasma processing system for processing a semiconductor substrate is disclosed. The plasma processing system includes a plasma processing chamber and an electrostatic chuck coupled to a bias compensation circuit. The method includes igniting a plasma in a plasma ignition step. Plasma ignition step is performed while a first bias compensation voltage provided by the bias compensation circuit to the chuck is substantially zero and while a first chamber pressure within the plasma processing chamber is below about 90 mTorr. The method further includes processing the substrate in a substrate-processing step after the plasma is ignited. The substrate-processing step employs a second bias compensation voltage provided by the bias compensation circuit that is higher than the first bias compensation voltage and a second chamber pressure substantially equal to the first chamber pressure.
摘要翻译：公开了一种用于处理半导体衬底的等离子体处理系统中的方法。等离子体处理系统包括等离子体处理室和耦合到偏置补偿电路的静电卡盘。该方法包括在等离子体点火步骤中点燃等离子体。当偏置补偿电路向卡盘提供的第一偏置补偿电压基本上为零并且等离子体处理室内的第一室压力低于约90mTorr时，执行等离子体点火步骤。该方法还包括在等离子体点燃之后的衬底处理步骤中处理衬底。基板处理步骤采用由偏置补偿电路提供的第二偏置补偿电压，该偏置补偿电压高于第一偏置补偿电压，第二室压力基本上等于第一室压力。

70. 发明授权

US06998349B2 System, method and apparatus for automatic control of an RF generator for maximum efficiency 失效
标题翻译：用于自动控制RF发生器以最大效率的系统，方法和装置
公开(公告)号：US06998349B2
公开(公告)日：2006-02-14
申请号：US10360316
申请日：2003-02-06
申请人： Thomas W. Anderson , Andras Kuthi
发明人： Thomas W. Anderson , Andras Kuthi
IPC分类号： H01L21/302
CPC分类号： H01L21/67253 , H01L21/67057
摘要： A system and method of generating RF includes a supply voltage source, an oscillator, an output amplifier, a load network, a peak voltage detector and a comparator circuit. The oscillator has a control signal input and an RF signal output. The output amplifier is coupled to the oscillator output. The load network is coupled between an output of the output amplifier and an output of the RF generator. The peak voltage detector is coupled across the output amplifier. The comparator circuit includes a first input coupled to the supply voltage source, a second input coupled to an output of the peak voltage detector, and a comparator output coupled to the oscillator control signal input.
摘要翻译：产生RF的系统和方法包括电源电压源，振荡器，输出放大器，负载网络，峰值电压检测器和比较器电路。振荡器具有控制信号输入和RF信号输出。输出放大器耦合到振荡器输出。负载网络耦合在输出放大器的输出端和RF发生器的输出端之间。峰值电压检测器跨输出放大器耦合。比较器电路包括耦合到电源电压源的第一输入端，耦合到峰值电压检测器的输出端的第二输入端和耦合到振荡器控制信号输入端的比较器输出端。

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