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61. 发明专利

JPS6465843A PLASMA TREATMENT DEVICE 失效
公开(公告)号：JPS6465843A
公开(公告)日：1989-03-13
申请号：JP22212487
申请日：1987-09-07
申请人： HITACHI LTD
发明人： HAKAMATA YOSHIMI , NATSUI KENICHI , ONO YASUNORI , SATO TADASHI , KOJIMA KEIMEI , KUROSAWA TOMOE
IPC分类号： H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To prevent such an impurity as an electrode material from mixing in plasma by a method wherein first and second lead-out electrodes, which are respectively connected to sub and main plasma chambers, are disposed in an array adjacent to each other and a potential difference is given between both electrodes from a power supply. CONSTITUTION:A treatment chamber 2 and main and sub plasma chambers 5 and 6 are evacuated in high vacuum and such etching gas as CF4 gas is introduced through a gas introducing port 17. A microwave is introduced in the chamber 6 from waveguides 13 passing through a transmitting window 12. A current is made to flow through solenoid coils 8 to generate a magnetic field of a magnetic flux density or more that an electron cyclotron resonance frequency coincides with the frequency of the microwave in the interior of the chamber 6 and plasma is produced in the chamber 6. Moreover, a potential that the potential of the chamber 6 becomes negative to the potential of the chamber 5 is given to electron lead-out electrodes 10 and 11 from a power supply 9. Electrons in the plasma in the chamber 6 are incided in the chamber 5 to ionize the gas and to produce plasma. Potentials are applied to a beam lead-out electrode group 14 from power supplies 15 and 16 to process substrates.

62. 发明专利

JPS6454729A PLASMA PROCESSING EQUIPMENT 失效
公开(公告)号：JPS6454729A
公开(公告)日：1989-03-02
申请号：JP21009687
申请日：1987-08-26
申请人： HITACHI LTD
发明人： NATSUI KENICHI , SATO TADASHI , ONO YASUNORI , HAKAMATA YOSHIMI , MORIJIRI MAKOTO , SAITO MASAKATSU , AOKI SHIGEO , OISHI SEITARO
IPC分类号： H01L21/302
摘要： PURPOSE:To control the working angle of a slant face section by arranging a magnetic field generating means on the rear side of a working surface and changing the incident angle of ions irradiating a sample. CONSTITUTION:Current is supplied to a filament 9 from a power supply 11, and voltage is applied between a plasma production chamber vessel 20 and the filament 9 by a power supply 12, thus producing plasma in a plasma production chamber 8. The plasma is led out into a treating chamber 13 from the production chamber 8 by leading-out electrodes 14, 15. The working surface of a substrate 3 is irradiated with ions positively charged from the plasma. The incident angle of ions at that time is changed by the position of a permanent magnet 5 disposed on the rear side of the substrate 3. The permanent magnet 5 is moved in parallel with the substrate 3, thus smoothly working the slant face section of the substrate.

63. 发明专利

JPS63282259A SPUTTERING DEVICE 失效
公开(公告)号：JPS63282259A
公开(公告)日：1988-11-18
申请号：JP11686587
申请日：1987-05-15
申请人： HITACHI LTD
发明人： ONO YASUNORI , SATO TADASHI , NATSUI KENICHI , HAKAMATA YOSHIMI , MORIJIRI MAKOTO , SAITO MASAKATSU , AOKI SHIGEO , OISHI SEITARO
IPC分类号： C23C14/34
摘要： PURPOSE:To prevent the generation of crevasses and cracks in the deposited film at the stepped part of a substrate by depositing the sputtered particles from a target on the substrate, and simulataneously projecting a particle beam on the substrate in the title counter target-type sputtering device. CONSTITUTION:A couple of counter targets 1, the substrate 4, a particles beam generator 20, and a sputtered particles filter 8 are arranged in a vacuum vessel 15. A permanent magnet 3 is placed on the rear of a target holder 2, and a magnetic field is generated in the direction vertical to the surface of the target 1. The inside of the vessel 15 is firstly evacuated, the flow rate of gaseous Ar is adjusted to provide a specified pressure in the generator 20 and between the targets 1, a high-frequency coil 22 is energized to produce plasma, the ion in the plasma is allowed to collide with the target 1, and the particles sputtered from the targets are deposited on the substrate 4. Meanwhile, the ion beam drawn out from the generator 20 is projected on the substrate 4. By this method, the generation of crevasses and cracks can be prevented even in the film formed on the stepped part on the substrate 4.

64. 发明专利

JPS63277759A FORMATION OF THIN FILM UTILIZING ION BEAM 失效
公开(公告)号：JPS63277759A
公开(公告)日：1988-11-15
申请号：JP3332687
申请日：1987-02-18
申请人： HITACHI LTD
发明人： SATO TADASHI , OHATA KOKICHI , KUROSAWA TOMOE , KOJIMA KEIMEI
IPC分类号： C23C14/46 , C23C14/48 , C23F4/00
摘要： PURPOSE:To prevent the electrification of the surface of an insulating material and to facilitate the formation and fine working of a thin film by making the number of neutralized ion beam particles higher than the number of charged ion beam particles at the time of projecting an ion beam on a sample. CONSTITUTION:A gas such as gaseous Ar necessary for fine working is introduced into a vacuum vessel, the linear density of the gas between an electrode 3 on the ion source output side and the insulating-material sample 5 is sufficiently increased, and hence beam plasma is produced along an ion beam 4. The number of the neutralized ion beam particles among all the ion beams reaching the sample surface per unit area and unit time is made higher than the number of the charged ion beam particles. By this method, fine working is carried out with high reliability without generating an electric discharge on a photoresist. In addition, since the blocking voltage of the ion beam due to the electrification of a target is low when the thin film of the insulating material is sputtered, a decrease in the film forming rate can be prevented.

65. 发明专利

JPS63120346A ONE-CHIP PROCESSOR 失效
公开(公告)号：JPS63120346A
公开(公告)日：1988-05-24
申请号：JP26559286
申请日：1986-11-10
申请人： HITACHI LTD
发明人： SATO TADASHI , KATO MASAO
IPC分类号： G06F15/78 , G06F1/00 , G06F1/32 , G06F12/06
摘要： PURPOSE:To reduce the power consumption of a 1-chip processor by controlling only a RAM module of small capacity necessary for execution of instructions under an accessable state. CONSTITUTION:A CS 2-1 consisting of plural RAM modules 2 is set to a CSDR 3-3 by an address in an address register 3-1. The contents of the CSDR 3-3 are decoded by an instruction decoder 3-4 for control of the inside of a 1-chip processor 1. A module address comparator 3-31 sets a dummy FF 3-32 in the case of different RAM addresses. Under such conditions, a CS control circuit 3-33 performs control to apply an executing cycle to the access 2 of the RAM module. This RAM module consumes minute power consumption and the FF 3-32 is set when said RAM module is switched to the access of another RAM module. Thus the access is prolonged against the RAM module.

66. 发明专利

JPS6396840A ION SOURCE 失效
公开(公告)号：JPS6396840A
公开(公告)日：1988-04-27
申请号：JP24132086
申请日：1986-10-13
申请人： HITACHI LTD
发明人： KUROSAWA YUKIO , OSHITA YOICHI , HAKAMATA YOSHIMI , NATSUI KENICHI , HIRASAWA KUNIO , SATO TADASHI , ONO YASUNORI
IPC分类号： H01J27/18 , H01J27/08 , H01J37/08
摘要： PURPOSE:To obtain an ion source with less impurities by performing d-c separation of a high frequency coil from an earth potential and performing d-c connection of the coil with an acceleration electrode. CONSTITUTION:A high-frequency coil 2 is connected with a high-frequency source 9 through coupling capacitors 11 and 12, where d-c separation from the high-frequency source 9 is performed. A middle point 13 of the high-frequency coil 2 is connected with an acceleration electrode 5. Therefore, and a mean potential of the high-frequency coil 2 is equal to the potential of the acceleration electrode 5 and also equal to that of plasma. Hence, no electric field occurs between the plasma and the high-frequency coil 2, so that ions in the plasma are not accelerated in the direction of the high-frequency coil and an insulating material of an vacuum container 1 is not sputtered. Therefore, sputtered materials do not invade the plasma, and so ion beams with less impurities are generated. Hence, a clean etching device without contamination at a time of processing can be obtained.

67. 发明专利

JPS62235485A ION SOURCE DEVICE 失效
公开(公告)号：JPS62235485A
公开(公告)日：1987-10-15
申请号：JP7775186
申请日：1986-04-04
申请人： HITACHI LTD
发明人： ONO YASUNORI , KUROSAWA TOMOE , SATO TADASHI , KUROSAWA YUKIO , HAKAMATA YOSHIMI
IPC分类号： C23C14/48 , C23F4/00 , G21K5/04 , H01J27/16 , H01J27/20 , H01J27/24 , H01J37/08 , H01J37/305 , H01J37/317
摘要： PURPOSE:To obtain a uniform ion beam in a wide range and to improve the durability of an ion source device by supplying the electrons generated from an electron generator into a plasma forming chamber and starting high-frequency discharge by said electrons. CONSTITUTION:A one-body hermetic vessel is constituted of the plasma forming chamber 1 and a processing chamber 2 and the inside thereof is evacuated to a vacuum state through a discharge port 4. CF4, etc., are introduced through a gas introducing port 5 into the vessel to a prescribed pressure. An electrode 6 for leading out the ion beam is constituted of the 1st grid 7 and the 2nd grid 8. A positive high voltage is first impressed to the 1st grid 7 and electric current is inputted to the electron generating source 15 to generate the electrons 14. The impressed voltage of the 2nd grid 8 is controlled to the ground potential in this stage and the electrons 14 are accelerated by the positive high voltage. The high-frequency power is then impressed to a high-frequency coil 9 to start high-frequency discharge, by which the plasma density is quickly increased and the sustaining high-frequency discharge is generated. A negative voltage is further impressed to the 2nd grid 8 and the input power source to the electron generating source 15 is decreased so that the operation is smoothly shifted to an ordinary ion beam etching operation state.

68. 发明专利

JPS62224668A APPARATUS FOR MANUFACTURING THIN FILM 失效
公开(公告)号：JPS62224668A
公开(公告)日：1987-10-02
申请号：JP6572686
申请日：1986-03-26
申请人： HITACHI LTD
发明人： SATO TADASHI , OHATA KOKICHI , KUROSAWA TOMOE , OKA YUZO
IPC分类号： C23C14/22 , C23C14/24 , C23C14/48
摘要： PURPOSE:To remarkably increase the speed of manufacturing a thin film by making combination use of ion implantation of high energy and vapor deposition in the boundary part between a substrate and the thin film and making combination use of ion implantation of low energy and vapor deposition for the greater part of the subsequent film thickness. CONSTITUTION:This apparatus is constituted of a preliminary evacuation chamber 21, a cleaning chamber 23, a high energy implantation chamber 27, a low energy implantation chamber 28, a taking up chamber 29, and a preliminary evacuation chamber 30. The substrate 4 is housed into the preliminary evacuation chamber 21 and after the inside thereof is evacuated, a gate valve 22a is opened and the substrate is transferred into the cleaning chamber 23. After the substrate 4 is made movable between the taking up part 24 and a feed part 25, the surface of the substrate 24 is cleaned. The substrate 4 is passed through the high energy implantation chamber 27 and the low energy implantation 28 and is taken up in the taking up part 24 of the taking up chamber 29. The thin film is formed on the substrate 4 by a high energy ion source 1 and electron beam vapor deposition device 3a in the high energy implantation chamber 27 and by a low energy ion source 2 and electron beam vapor deposition device 3b in the low energy implantation chamber 28 during this time.

69. 发明专利

JPS62195109A SPUTTERING DEVICE 失效
公开(公告)号：JPS62195109A
公开(公告)日：1987-08-27
申请号：JP3692686
申请日：1986-02-21
申请人： HITACHI LTD
发明人： MITSUOKA KATSUYA , KOZONO YUZO , IMAGAWA TAKAO , SATO MITSUO , KUMAGAI AKIRA , SANO MASAAKI , HARA SHINICHI , SATO TADASHI , NARUSHIGE SHINJI , HANAZONO MASANOBU , SETOYAMA HIDETSUGU , ARIMATSU KEIJI , KOBAYASHI TETSUO
IPC分类号： C23C14/36 , C23C14/35 , H01F10/08 , H01F10/32 , H01F41/18
摘要： PURPOSE:To reduce the effect of leakage magnetic field inflicted on the member to be sputtered, to stably give a uniaxial anisotropy to a thin film as well as to contrive to make uniform the thickness of a film by a method wherein the position of the maximum value of the leakage magnetic field from a magnetic device to the side of member to be sputtered is set the position outside the external circumference of the member to be sputtered. CONSTITUTION:A target 4 is formed in the diameter larger than that of the member 7 to be sputtered, and the position of the maximum value of the leakage magnetic field from a magnetic device 1 to the side of the member 7 to be sputtered is formed at the position outside the external circumference 8 of the member 7 to be sputtered. When the maximum value of the leakage magnetic field is set at Hmax and the distance from its center point is set at W, said Hmax becomes the intermediate one of the two magnetron magnets 2 and 3 of the magnetic device 1, and both magnetron magnets 2 and 3 are provided at the position where the W is located outside the external circumference 8 of the member 7 to be sputtered. The concrete size of Hmax and the shape of the curved line of magnetic field distribution are determined by the shape of the two magnetron magnets 2 and 3, their isolation distance, the material of the target 4, the thickness of the target 4 and the like.

70. 发明专利

JPS62108429A PLASMA GENERATOR 失效
公开(公告)号：JPS62108429A
公开(公告)日：1987-05-19
申请号：JP24708585
申请日：1985-11-06
申请人： HITACHI LTD
发明人： SATO TADASHI , ONO YASUNORI , KUROSAWA TOMOE , HIRASAWA KUNIO , SEKIMOTO SHINYA
IPC分类号： H01J27/08 , H01J37/08
摘要： PURPOSE:To generate uniform plasma, by interposing a spacer between a plasma generation vessel and a permanent magnet to adjust the distance therebetween. CONSTITUTION:A spacer 7 is interposed between a plasma generation vessel 2 and each of permanent magnets 3 when the magnets are rearranged. As a result, the irregularity of a magnetic field produced on the inside surface of the plasma generation vessel 2 and having the irregularity due to that of the magnetic properties of the permanent magnets 3 and that of the accuracy of processing of the vessel and securing metals 8 for the magnets or the like is corrected. Uniform plasma is thus generated.

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