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61. 发明授权

US06802655B2 Laser source 失效
标题翻译：激光源
公开(公告)号：US06802655B2
公开(公告)日：2004-10-12
申请号：US10196054
申请日：2002-07-16
申请人： Tosifumi Yokoyama , Yasuo Kitaoka , Kazuhisa Yamamoto
发明人： Tosifumi Yokoyama , Yasuo Kitaoka , Kazuhisa Yamamoto
IPC分类号： G02B636
CPC分类号： G02B6/4224 , G02B6/42 , G02B6/4234 , H01S5/02252 , H01S5/02268 , H01S5/02272 , H01S5/02284 , H01S5/0425 , H01S5/06256
摘要： An object of the present invention is to provide a laser source including a submount, an electrode portion formed on the submount, and a semiconductor laser fixed to the electrode portion by means of an adhesive portion, capable of improving the position accuracy of a laser beam emission portion of the semiconductor laser in the height direction. The electrode portion including an electrode for an active region, an electrode for a phase adjustment region, and an electrode for a DBR region is formed on the submount. A plurality of stopper portions also are formed on the submount. The semiconductor laser is fixed to the electrode portion (the electrode for an active region, electrode for a phase adjustment region, and electrode for a DBR region) by means of solder as an adhesive while being in contact with the stopper portions.
摘要翻译：本发明的目的是提供一种激光源，其包括基座，形成在基座上的电极部分和通过粘合部分固定到电极部分的半导体激光器，能够提高激光束的位置精度半导体激光器的高度方向的发射部分。在底座上形成有包括有源区用电极，相位调整区用电极和DBR区电极的电极部。在底座上还形成有多个止动部。半导体激光器通过焊料作为粘合剂固定到电极部分（用于有源区域的电极，用于相位调整区域的电极和用于DBR区域的电极），同时与止动部分接触。

62. 发明授权

US06614966B2 Optical waveguide device integrated module and method of manufacturing the same 有权
公开(公告)号：US06614966B2
公开(公告)日：2003-09-02
申请号：US09801223
申请日：2001-03-07
申请人： Yasuo Kitaoka , Toshifumi Yokoyama , Kazuhisa Yamamoto
发明人： Yasuo Kitaoka , Toshifumi Yokoyama , Kazuhisa Yamamoto
IPC分类号： G02B626
CPC分类号： G02B6/42 , G02B6/4219 , G02B6/4231 , G02F1/37 , H01L24/29 , H01L24/32 , H01L2224/83192 , H01S5/0092 , H01S5/02252 , H01S5/02272 , H01S5/0612 , H01S5/125
摘要： A semiconductor laser and an optical waveguide device with an optical waveguide formed at a surface of its substrate are provided on a submount. The semiconductor laser and the optical waveguide device are mounted with an active layer and a surface at which the optical waveguide is formed facing the submount, respectively. The submount is combined with the semiconductor laser or the optical waveguide device to form one body using an adhesive with a spacer, which maintains a substantially uniform distance therebetween, being interposed therebetween, so that position adjustment in the height direction can be made automatically and mounting can be carried out with high-precision optical coupling. Thus, an optical waveguide device integrated module and a method of manufacturing the same are provided, in which a semiconductor laser and a planar optical waveguide device are mounted with their positions in the height direction controlled with high precision.

63. 发明授权

US06327289B1 Wavelength-variable semiconductor laser, optical integrated device utilizing the same, and production method thereof 失效
公开(公告)号：US06327289B1
公开(公告)日：2001-12-04
申请号：US09146024
申请日：1998-09-02
申请人： Yasuo Kitaoka , Kiminori Mizuuchi , Kazuhisa Yamamoto
发明人： Yasuo Kitaoka , Kiminori Mizuuchi , Kazuhisa Yamamoto
IPC分类号： H01S500
CPC分类号： H01S5/06256 , G02B6/12004 , G02B6/4202 , G02B6/4224 , G02B6/423 , G02B6/4231 , G02B6/4238 , G02B6/4249 , G02F1/3775 , H01L2224/48463 , H01S5/0092 , H01S5/0224 , H01S5/02268 , H01S5/02272 , H01S5/02284 , H01S5/02446 , H01S5/125
摘要： A wavelength-variable semiconductor laser includes: a submount; and a semiconductor laser chip being mounted onto the submount and having at least an active layer region and a distributed Bragg reflection region, wherein the semiconductor laser chip is mounted onto the submount in such a manner that an epitaxial growth surface thereof faces the submount and a heat transfer condition of the active layer region is different from a heat transfer condition of the distributed Bragg reflection region. Moreover, an optical integrated device includes at least a semiconductor laser and an optical waveguide device both mounted on a submount, wherein the semiconductor laser is the wavelength-variable semiconductor laser as set forth above.

64. 发明授权

US5301059A Short-wavelength light generating apparatus 失效
标题翻译：短波长发光装置
公开(公告)号：US5301059A
公开(公告)日：1994-04-05
申请号：US20335
申请日：1993-02-19
申请人： Yasuo Kitaoka , Kazuhisa Yamamoto , Kiminori Mizuuchi , Makoto Kato , Fumihiro Sogawa
发明人： Yasuo Kitaoka , Kazuhisa Yamamoto , Kiminori Mizuuchi , Makoto Kato , Fumihiro Sogawa
IPC分类号： H01S3/0941 , H01S3/109 , H01S5/06 , H01S5/10 , H01S5/14 , G02F1/35
CPC分类号： H01S5/141 , H01S3/08009 , H01S3/109 , H01S5/005 , H01S5/0092 , H01S5/143
摘要： A short-wavelength light generating apparatus comprising a pumping semiconductor laser and an intra-cavity solid state laser, the intra-cavity solid state laser is excited in response to a laser light beam from the semiconductor laser to generate a short-wavelength light beam to an external. Also included in the apparatus is an external grating mirror having on its one surface a reflection type diffraction grating and placed between the semiconductor laser and the intra-cavity solid state laser. The external grating mirror reflects the laser light beam from the semiconductor laser to feedback a portion of the laser light beam to said semiconductor laser so that an oscillated wavelength of the semiconductor laser becomes within a wavelength acceptance of the intra-cavity solid state laser. Further, the external grating mirror supplies a portion of the laser light beam from the semiconductor laser to the intra-cavity solid state laser. This arrangement can output a stable harmonic wave with a high efficiency.
摘要翻译：一种包括泵浦半导体激光器和腔内固体激光器的短波长发光装置，响应于来自半导体激光器的激光束激发腔内固态激光器，以产生短波长光束外部的。该装置中还包括外置光栅镜，其一面具有反射型衍射光栅，并设置在半导体激光器和腔内固态激光器之间。外部光栅镜反射来自半导体激光器的激光束，以将激光束的一部分反射到所述半导体激光器，使得半导体激光器的振荡波长变得在腔内固态激光器的波长接受范围内。此外，外部光栅镜将激光束的一部分从半导体激光器提供给腔内固态激光器。这种布置可以以高效率输出稳定的谐波。

65. 发明授权

US08507364B2 N-type group III nitride-based compound semiconductor and production method therefor 有权
公开(公告)号：US08507364B2
公开(公告)日：2013-08-13
申请号：US12453743
申请日：2009-05-20
申请人： Seiji Nagai , Shiro Yamazaki , Yasuhide Yakushi , Takayuki Sato , Makoto Iwai , Katsuhiro Imai , Yusuke Mori , Yasuo Kitaoka
发明人： Seiji Nagai , Shiro Yamazaki , Yasuhide Yakushi , Takayuki Sato , Makoto Iwai , Katsuhiro Imai , Yusuke Mori , Yasuo Kitaoka
IPC分类号： H01L21/20
CPC分类号： C30B9/12 , C30B9/10 , C30B29/403
摘要： An object of the present invention is to realize, by the flux process, the production of a high-quality n-type semiconductor crystal having high concentration of electrons. The method of the invention for producing an n-type Group III nitride-based compound semiconductor by the flux process, the method including preparing a melt by melting at least a Group III element by use of a flux; supplying a nitrogen-containing gas to the melt; and growing an n-type Group III nitride-based compound semiconductor crystal on a seed crystal from the melt. In the method, carbon and germanium are dissolved in the melt, and germanium is incorporated as a donor into the semiconductor crystal, to thereby produce an n-type semiconductor crystal.The mole percentage of germanium to gallium in the melt is 0.05 mol % to 0.5 mol %, and the mole percentage of carbon to sodium is 0.1 mol % to 3.0 mol %.

66. 发明申请

US20120183006A1 OPTICAL DEVICE, LASER BEAM SOURCE, LASER APPARATUS AND METHOD OF PRODUCING OPTICAL DEVICE 审中-公开
标题翻译：光学装置，激光束源，激光装置和制造光学装置的方法
公开(公告)号：US20120183006A1
公开(公告)日：2012-07-19
申请号：US11834176
申请日：2007-08-06
申请人： Kazuhisa YAMAMOTO , Kiminori Mizuuchi , Yasuo Kitaoka , Makoto Kato
发明人： Kazuhisa YAMAMOTO , Kiminori Mizuuchi , Yasuo Kitaoka , Makoto Kato
IPC分类号： H01S5/02
CPC分类号： G02F1/37 , G02F1/3558 , G02F1/3775 , G02F2203/60 , H01S3/09415 , H01S3/109 , H01S3/23 , H01S5/0092 , H01S5/02 , H01S5/40 , H01S5/4087
摘要： After forming domain inverted layers 3 in an LiTaO3 substrate 1, an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer 8 is formed, where an increase in refractive index generated during high-temperature annealing is lowered, thereby providing a stable optical wavelength conversion element. Thus, the phase-matched wavelength becomes constant, and variation in harmonic wave output is eliminated. Consequently, with respect to an optical wavelength conversion element utilizing a non-linear optical effect, a highly reliable element is provided.
摘要翻译：在LiTaO 3基板1中形成畴反转层3之后，形成光波导。通过对由此形成的光波长转换元件进行低温退火，形成稳定的质子交换层8，在高温退火时产生的折射率的升高降低，从而提供稳定的光波长转换元件。因此，相位匹配波长变得恒定，并且消除了谐波输出的变化。因此，对于利用非线性光学效应的光波长转换元件，提供了高度可靠的元件。

67. 发明申请

US20100012020A1 METHOD FOR MANUFACTURING NITRIDE SINGLE CRYSTAL 有权
标题翻译：制造硝酸单晶的方法
公开(公告)号：US20100012020A1
公开(公告)日：2010-01-21
申请号：US12556015
申请日：2009-09-09
申请人： Mikiya Ichimura , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Yasuo Kitaoka
发明人： Mikiya Ichimura , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Yasuo Kitaoka
IPC分类号： C30B9/00
CPC分类号： C30B29/406 , C30B19/02 , C30B19/062 , C30B19/08 , C30B29/403 , H01L21/0237 , H01L21/0254 , H01L21/02625
摘要： A nitride single crystal is produced on a seed crystal substrate 5 in a melt containing a flux and a raw material of the single crystal in a growing vessel 1. The melt 2 in the growing vessel 1 has temperature gradient in a horizontal direction. In growing a nitride single crystal by flux method, adhesion of inferior crystals onto the single crystal is prevented and the film thickness of the single crystal is made constant.
摘要翻译：氮化物单晶在生长容器1中含有熔剂和单晶原料的熔融物中在籽晶衬底5上产生。生长容器1中的熔体2在水平方向上具有温度梯度。在通过助熔剂法生长氮化物单晶时，防止了将劣质晶体粘附到单晶上，使单晶的膜厚保持恒定。

68. 发明授权

US07551654B2 Coherent light source and optical system 有权
标题翻译：相干光源和光学系统
公开(公告)号：US07551654B2
公开(公告)日：2009-06-23
申请号：US10591983
申请日：2005-02-22
申请人： Kiminori Mizuuchi , Kazuhisa Yamamoto , Ken'ichi Kasazumi , Isao Kidoguchi , Yasuo Kitaoka
发明人： Kiminori Mizuuchi , Kazuhisa Yamamoto , Ken'ichi Kasazumi , Isao Kidoguchi , Yasuo Kitaoka
IPC分类号： H01S3/10 , H01S5/00
CPC分类号： G02B1/18 , G02B27/0006 , G11B7/121 , G11B7/1275 , G11B7/1362 , G11B7/1395 , H01S3/005 , H01S3/0092 , H01S3/025 , H01S3/0809 , H01S3/09415 , H01S3/109 , H01S3/2391 , H01S5/005 , H01S5/0092 , H01S5/02212 , H01S5/02296 , H01S5/32341 , H01S5/4031 , H01S5/4087
摘要： In a coherent light source in which limitations on the wavelength of emitted light are relaxed, a coherent light source for simultaneously emitting a first light (3) and a second light (4) having a wavelength shorter than that of the first light (3), includes: a light source main body emitting at least the first light (3); a mirror (5) which transmits or reflects the first light (3); and a functional film (6) provided on at least a part of the mirror (5). The functional film (6) has a photocatalytic effect to be induced by the second light (4).
摘要翻译：在对发射光的波长的限制松弛的相干光源中，用于同时发射具有比第一光（3）的波长短的波长的第一光（3）和第二光（4）的相干光源，包括：至少发射第一光（3）的光源主体; 发射或反射第一光（3）的反射镜（5）; 以及设置在所述反射镜（5）的至少一部分上的功能膜（6）。功能膜（6）具有由第二光（4）诱导的光催化效果。

69. 发明申请

US20090002265A1 Image Display Device and Image Display System 有权
标题翻译：图像显示设备和图像显示系统
公开(公告)号：US20090002265A1
公开(公告)日：2009-01-01
申请号：US11658318
申请日：2005-07-27
申请人： Yasuo Kitaoka , Kazuhisa Yamamoto , Hiromu Kitaura , Ken ichi Kasazumi
发明人： Yasuo Kitaoka , Kazuhisa Yamamoto , Hiromu Kitaura , Ken ichi Kasazumi
IPC分类号： G09G5/00 , G09G3/20
CPC分类号： H04B10/116 , G09G3/003 , G09G3/02 , G09G3/32 , G09G3/3406 , G09G2310/0237 , G09G2320/028 , G09G2320/0633 , G09G2320/0646 , G09G2354/00 , G09G2360/14 , H04B10/1141 , H04N13/305 , H04N13/376
摘要： An image display device and an image display system which can establish visible light communication without interfering with an image displayed at a predetermined frame rate are provided. A controller 12 controls a spatial light modulator in accordance with an image signal to display the image, and also modulates an intensity of a visible light output from a backlight 13 with a frequency higher than the frame rate of the image signal to have the visible light output from the backlight 13 carry additional information. A light receiver 15 receives the visible light and demodulates to extract the additional information. An additional information generator 16 outputs the additional information.
摘要翻译：提供了能够建立可见光通信而不干扰以预定帧率显示的图像的图像显示装置和图像显示系统。控制器12根据图像信号控制空间光调制器以显示图像，并且还以高于图像信号的帧速率的频率调制从背光源13输出的可见光的强度，以具有可见光来自背光13的输出携带附加信息。光接收器15接收可见光并进行解调以提取附加信息。附加信息发生器16输出附加信息。

70. 发明申请

US20070221122A1 Method for Producing Silicon Carbide (Sic) Single Crystal and Silicon Carbide (Sic) Single Crystal Obtained By Such Method 失效
标题翻译：通过这种方法获得的碳化硅（Sic）单晶和碳化硅（Sic）单晶的生产方法
公开(公告)号：US20070221122A1
公开(公告)日：2007-09-27
申请号：US10599035
申请日：2005-12-26
申请人： Yasuo Kitaoka , Yusuke Mori , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara
发明人： Yasuo Kitaoka , Yusuke Mori , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara
IPC分类号： C30B29/36 , C30B21/06 , C30B19/00
CPC分类号： C30B29/36 , C30B9/00 , C30B9/10 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： The present invention provides a producing method with which large silicon carbide (SiC) single crystal can be produced at low cost. Silicon carbide single crystal is produced or grown by dissolving and reacting silicon (Si) and carbon (C) in an alkali metal flux. The alkali metal preferably is lithium (Li). With this method, silicon carbide single crystal can be produced even under low-temperature conditions of 1500° C. or lower, for example. The photograph of FIG. 3B is an example of a silicon carbide single crystal obtained by the method of the present invention.
摘要翻译：本发明提供可以以低成本制造大型碳化硅（SiC）单晶的制造方法。通过使硅（Si）和碳（C）在碱金属助熔剂中溶解和反应来生产或生长碳化硅单晶。碱金属优选为锂（Li）。通过该方法，即使在例如1500℃以下的低温条件下也可以制造碳化硅单晶。图的照片图3B是通过本发明的方法获得的碳化硅单晶的实例。

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