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61. 发明授权

US5849437A Electron beam exposure mask and method of manufacturing the same and electron beam exposure method 失效
公开(公告)号：US5849437A
公开(公告)日：1998-12-15
申请号：US590827
申请日：1996-01-24
申请人： Satoru Yamazaki , Kiichi Sakamoto , Hiroshi Yasuda , Takayuki Sakakibara , Satoru Sagoh
发明人： Satoru Yamazaki , Kiichi Sakamoto , Hiroshi Yasuda , Takayuki Sakakibara , Satoru Sagoh
IPC分类号： G03F1/20 , G03F7/20 , H01J37/317 , G03F9/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , G03F7/2047 , H01J37/3174 , H01J2237/31769 , H01J2237/31794
摘要： In an exposure mask of the present invention, a plurality of opening regions are disposed via crossbeams, each having a size not to be resolved, along peripheral edges of island-like patterns and peninsula-like patterns for shielding transmission of charged particles.

62. 发明授权

US5606071A Process for preparing 5-arylhydantoins using 5-hydantoin, a halogenating agent and p-phenol 失效
标题翻译：使用5-乙内酰脲，卤化剂和对苯酚制备5-芳基乙内酰脲的方法
公开(公告)号：US5606071A
公开(公告)日：1997-02-25
申请号：US321833
申请日：1994-10-06
申请人： Hiroshi Yasuda
发明人： Hiroshi Yasuda
IPC分类号： C07D233/74 , C07D233/78 , C07D499/00 , C07D233/76 , C07D233/54 , C07D233/72 , C07D233/86
CPC分类号： C07D233/78 , C07D233/74 , C07D499/00
摘要： The present invention provides a novel process for the preparation of 5-arylhydantoins as an important intermediate of (D)-arylglycines (e.g., (D)-p-hydroxyphenyl-glycine) useful for the synthesis of semisynthetic penicillines and cephalosporins, the process comprising (i) reacting a 5-unsubstituted hydantoin compound with a halogenating agent and (ii) reacting the resulting product with a p-unsubstituted phenol compound, the hydroxy group of which may be protected, to substitute the 5-position of the hydantoin compound with the phenol compound at the para position.
摘要翻译：本发明提供了一种制备5-芳基乙内酰脲的新方法，其作为可用于合成半合成青霉素和头孢菌素的（D） - 芳基甘氨酸（例如（D） - 对羟基苯基 - 甘氨酸）的重要中间体，该方法包括（i）使5-未取代的乙内酰脲化合物与卤化剂反应，和（ii）使得到的产物与可被保护的羟基的对 - 未取代的酚化合物反应以用乙内酰脲化合物的5位代替在对位的酚化合物。

63. 发明授权

US5513245A Automatic generation of private authentication key for wireless communication systems 失效
标题翻译：自动生成无线通信系统的私有认证密钥
公开(公告)号：US5513245A
公开(公告)日：1996-04-30
申请号：US296891
申请日：1994-08-29
申请人： Semyon Mizikovsky , Geoffrey Anderson , Peter Doums , Masaaki Akahanc , Hiroshi Yasuda
发明人： Semyon Mizikovsky , Geoffrey Anderson , Peter Doums , Masaaki Akahanc , Hiroshi Yasuda
IPC分类号： H04L9/08 , H04L9/32 , H04W12/06 , H04Q7/22
CPC分类号： H04W12/04 , H04L9/0869 , H04L9/3231 , H04L9/3271 , H04L2209/80 , H04W12/06
摘要： Apparatus and method for automatically generating an authentication key (A-Key) in a mobile station wherein the mobile station periodically receives random numbers from a base station, and automatically generates the authentication key from a received random number and from mobile station identification data stored in the mobile station. The mobile station identification data may include the electronic serial number of the mobile station, a user selected value, and a cellular system selected value. In addition, mixing registers may be utilized by an encoding algorithm, such as the CAVE algorithm, for encoding the random numbers and the identification data to automatically generate the mobile station authentication key.
摘要翻译：在移动台中自动生成认证密钥（A-Key）的装置和方法，其中移动台周期性地从基站接收随机数，并且从接收到的随机数和从存储的接收的随机数中自动产生认证密钥移动台。移动站识别数据可以包括移动站的电子序列号，用户选择的值和蜂窝系统选择的值。此外，混合寄存器可以由诸如CAVE算法的编码算法用于编码随机数和识别数据以自动生成移动台认证密钥。

64. 发明授权

US5430304A Blanking aperture array type charged particle beam exposure 失效
标题翻译：消隐孔径阵列式带电粒子束曝光
公开(公告)号：US5430304A
公开(公告)日：1995-07-04
申请号：US327810
申请日：1994-10-24
申请人： Hiroshi Yasuda , Yasushi Takahashi , Yoshihisa Oae , Tomohiko Abe , Shunsuke Fueki
发明人： Hiroshi Yasuda , Yasushi Takahashi , Yoshihisa Oae , Tomohiko Abe , Shunsuke Fueki
IPC分类号： H01L21/027 , H01J37/302
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J37/3174 , H01J2237/0435 , H01J2237/31776
摘要： A charged particle beam-exposure method in which a subject is exposed to a pattern via a charged particle beam having an on/off exposure characteristic. A blanking aperture array has n open/close devices which individually/correspond to respective scan positions of the charged particle beam and operate to control the on/off exposure characteristic of the charged particle beam. The method includes: (1) selectively designating bit positions of successive n-bit width data blocks of the pattern, each n-bit width data block stored within a row of the pattern; (2) successively reading each n-bit width data block; (3) forming successive rows of unit pattern data from the successively designated and read n-bit width data block, each successive row corresponding to a successively designated and read n-bit width data block; (4) storing the successive rows of unit pattern data to form unit pattern data in bit matrix form having m columns and n rows; and (5) sequentially supplying the successive rows of unit pattern data to the blanking aperture array to control the on/off exposure characteristic of the charged particle beam.
摘要翻译：一种带电粒子束曝光方法，其中被摄体经由具有开/关曝光特性的带电粒子束曝光于图案。消隐孔径阵列具有单独/对应于带电粒子束的相应扫描位置的n个打开/关闭装置，并且用于控制带电粒子束的开/关曝光特性。该方法包括：（1）有选择地指定图案的连续n位宽度数据块的位位置，每个n位宽数据块存储在该行图案中; （2）连续读取每个n位宽数据块; （3）从连续指定和读取的n位宽度数据块形成连续的单位图形数据行，每个连续行对应于连续指定和读取的n位宽度数据块; （4）存储连续的单位图形数据行以形成具有m列和n行的位矩阵形式的单位图形数据; 并且（5）将连续行的单位图形数据顺序地提供给消隐孔径阵列，以控制带电粒子束的接通/断开曝光特性。

65. 发明授权

US5359202A Electron beam exposure apparatus employing blanking aperture array 失效
标题翻译：采用消隐孔径阵列的电子束曝光装置
公开(公告)号：US5359202A
公开(公告)日：1994-10-25
申请号：US95424
申请日：1993-07-23
申请人： Hiroshi Yasuda , Yoshihisa Oae , Tomohiko Abe
发明人： Hiroshi Yasuda , Yoshihisa Oae , Tomohiko Abe
IPC分类号： G03F7/20 , H01J37/06 , H01J37/305 , H01J37/317 , H01L21/027 , H01J37/30
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/0435 , H01J2237/06308 , H01J2237/31774
摘要： An electron beam exposure apparatus is provided with an electron gun emitting an electron beam, a blanking aperture array including a plurality of two-dimensionally arranged blanking apertures for selectively deflecting the electron beam passing through the blanking apertures in a predetermined direction so as to shape the electron beam into a plurality of electron beams, a deflection device for regularly deflecting the electron beams passed through the blanking aperture array, and an electron beam controller for controlling the electron beams passed through the blanking aperture array so as to irradiate and expose an object surface. The electron gun has a needle shaped chip which comprises a pair of sloping surfaces which are faces, and a vertex portion connecting the sloping surfaces and forming an inverted V-shape at a tip end of the needle shaped chip when viewed in a direction in which the vertex portion extends.
摘要翻译：电子束曝光装置设置有发射电子束的电子枪，包括多个二维布置的消隐孔的消隐孔阵列，用于在预定方向上选择性地偏转通过消隐孔的电子束，以使电子束形成多个电子束，用于规则地偏转通过消隐孔阵列的电子束的偏转装置和用于控制通过消隐孔阵列的电子束以照射和暴露物体表面的电子束控制器。电子枪具有针状芯片，该针状芯片包括一对<100>倾斜表面，以及顶点部分，其连接倾斜表面并在针状芯片的尖端处形成倒V形顶点部分延伸的方向。

66. 发明授权

US5260579A Charged particle beam exposure system and charged particle beam exposure method 失效
标题翻译：带电粒子束曝光系统和带电粒子束曝光方法
公开(公告)号：US5260579A
公开(公告)日：1993-11-09
申请号：US851400
申请日：1992-03-13
申请人： Hiroshi Yasuda , Yasushi Takahashi , Kiichi Sakamoto , Akio Yamada , Yoshihisa Oae , Junichi Kai , Shunsuke Fueki , Kenichi Kawashima
发明人： Hiroshi Yasuda , Yasushi Takahashi , Kiichi Sakamoto , Akio Yamada , Yoshihisa Oae , Junichi Kai , Shunsuke Fueki , Kenichi Kawashima
IPC分类号： H01J37/09 , H01J37/317 , H01J37/302
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/09 , H01J37/3177 , H01J2237/0435
摘要： A charged particle beam exposure system is directed to an exposure process of an electron beam for sequentially scanning an electron beam employing a blanking aperture array including a plurality of blanking apertures. The system facilitates re-focusing for compensation of focus error due to Coulumb effect and makes wiring the blanking aperture array easier. The system further allows exposure without an irradiation gap. The blanking aperture array 6 is formed with a plurality of said blanking apertures 62 arranged in a two-dimensional configuration. A control system 24 controls the blanking aperture array 62 to set the blanking aperture to the ON state where the charged particle beams pass through the blanking aperture and reach the object 19 to be exposed or the OFF state where the charged particle beams cannot reach the object 19 to be exposed. The other control system of the control means performs a control so that a plurality of said charged particle beams that have passed through different blanking apertures of said blanking aperture array overlaps and is irradiated a plurality of times onto the specified position or the peripheral position in the vicinity of the specified position of the object to be exposed to the charged particle beams.

67. 发明授权

US5215338A Flexible supporting sheath for cables and the like 失效
标题翻译：用于电缆等的柔性支撑护套
公开(公告)号：US5215338A
公开(公告)日：1993-06-01
申请号：US800526
申请日：1991-12-02
申请人： Akira Kimura , Nobuo Kitao , Hiroshi Yasuda , Kiyoshi Isozaki , Hiroshi Nishimura , Yoshimasa Shimomura
发明人： Akira Kimura , Nobuo Kitao , Hiroshi Yasuda , Kiyoshi Isozaki , Hiroshi Nishimura , Yoshimasa Shimomura
CPC分类号： F16L3/015 , H02G3/0475 , Y10S285/921 , Y10T403/32565
摘要： A universally articulable supporting sheath comprises an interconnected series of links, each having a convex spherical surface at one end, and a concave spherical surface at its opposite end. The concave and convex surfaces mate with one another to form the sheath. Special links having branch openings may be provided. Various forms of waterproofing seals are provided, including O-rings, axially compressed rings, flexible belts, and ridges on the spherical surfaces. The links can be fitted together by thermal expansion. However, an axially split link is also described, which comprises two parts which snap together. The split parts may be molded as a unit with an integral thin wall hinge. The bending characteristics and bending radius of a sheath can be modified by insertion of spacers between the links at selected locations, or by the insertion of pins into radial holes provided in the links. Spacers with tongues may be used to prevent rotation of the links about the sheath axis, while allowing unidirectional articulation. Projections on one of a pair of mating spherical surfaces can be engaged with holes, slots or recesses of rectangular or other shapes to produce various limits on articulation and rotation. A single link may be provided with several alternatively usable holes, recesses and the like. The outer surface of a link can be provided with an axial extension engageable with a surface of an adjoining link to prevent back bending, or to prevent bending altogether.
摘要翻译：普遍关节的支撑护套包括互连的连接系列，每个连杆在一端具有凸形球形表面，在其相对端具有凹形球形表面。凹凸表面彼此配合形成护套。可以提供具有分支开口的特殊连接。提供各种形式的防水密封件，包括O形圈，轴向压缩环，柔性带和球形表面上的脊。连杆可以通过热膨胀装配在一起。然而，还描述了轴向分离连杆，其包括两个部件，它们卡在一起。分开的部件可以被模制成具有整体薄壁铰链的单元。护套的弯曲特性和弯曲半径可以通过在选定位置处的连杆之间插入间隔件，或者通过将销插入设置在连杆中的径向孔中来改变。可以使用具有舌头的间隔器来防止链节围绕护套轴线的旋转，同时允许单向铰接。一对配对球面之一上的突起可以与矩形或其它形状的孔，槽或凹槽接合，以产生铰接和旋转的各种限制。单个链节可以设置有多个可选择的可用孔，凹槽等。连杆的外表面可以设置有可与邻接连杆的表面接合的轴向延伸部，以防止背部弯曲，或者完全防止弯曲。

68. 发明授权

US4906540A Lead-acid battery having a grid base of a lead-calcium alloy and a layer of lead-antimony-stannum alloy roll-bonded to the grid base 失效
标题翻译：具有铅 - 钙合金网格的铅酸蓄电池和与电网基体滚压的铅 - 锑 - 锡合金层
公开(公告)号：US4906540A
公开(公告)日：1990-03-06
申请号：US366534
申请日：1989-06-15
申请人： Naoto Hoshihara , Hiroshi Yasuda , Katsuhiro Takahashi
发明人： Naoto Hoshihara , Hiroshi Yasuda , Katsuhiro Takahashi
IPC分类号： H01M4/68 , H01M4/74 , H01M4/84
CPC分类号： H01M4/685 , H01M4/745 , H01M4/84
摘要： A paste type lead storage battery having a grid constituted by a grid base formed of a lead-calcium alloy and a layer of lead-antimony-stannum alloy roll-bonded integrally to the grid base on at least one side thereof. Preferably, the grid is formed by expanding a sheet of base material to which the alloy layer is integrally roll-bonded. Portions of the base and the alloy layer that serve as a active material support are both in contact with a paste-like active material, and antimony and stannum coexist in the alloy layer. The charge restoration after standing in a discharged state and the lifetime during cycles of charge and discharge including heavy discharge are thereby improved.
摘要翻译：一种糊状铅蓄电池，其具有由铅 - 钙合金形成的栅格基体和在至少一侧与栅格基体一体地滚压的铅 - 锑 - 锡合金层构成的栅格。优选地，通过使合金层一体地辊压粘合的基材片膨胀而形成格栅。用作活性材料载体的基体和合金层的部分都与糊状活性材料接触，并且锑和锡在合金层中共存。因此，放电状态下的充电恢复和包括重放电在内的充放电循环期间的寿命得到改善。

69. 发明授权

US4789786A Method of projecting photoelectron image 失效
标题翻译：投影光电子图像的方法
公开(公告)号：US4789786A
公开(公告)日：1988-12-06
申请号：US144275
申请日：1988-01-15
申请人： Hiroshi Yasuda , Ichiro Honjo
发明人： Hiroshi Yasuda , Ichiro Honjo
IPC分类号： G03F7/20 , H01J37/317 , H01L21/30
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/2037 , H01J37/3175 , H01J2237/31779
摘要： A method for projecting a photelectron image includes providing a mask substrate, and selectively contacting a layer which lowers the work function of the mask substrate thereto. Photoelectrons are emitted from the contacted portion.
摘要翻译：用于投影光电子图像的方法包括提供掩模基板，并且选择性地接触降低掩模基板的功函数的层。光电子从被接触的部分发射。

70. 发明授权

US4735881A Method for forming patterns by using a high-current-density electron beam 失效
标题翻译：通过使用高电流密度电子束形成图案的方法
公开(公告)号：US4735881A
公开(公告)日：1988-04-05
申请号：US883386
申请日：1986-07-08
申请人： Koichi Kobayashi , Hiroshi Yasuda
发明人： Koichi Kobayashi , Hiroshi Yasuda
IPC分类号： H01L21/027 , G03F7/20 , H01J37/302 , H01L21/00 , H01L21/30 , G03C5/00
CPC分类号： H01J37/3026 , G03F7/2059 , Y10S430/143
摘要： A method incorporated in a high throughput EB lithography suitable to the fabrication of VLSI semiconductor circuit. The method comprises a step of providing patterns which are delineated to join together with an overlap determined in accordance with the time interval between the respective delineations thereof by using an electron beam having a high current density and/or high energy. When a first and a second patterns having respective edge portions contacting with each other are delineated in the order of the first pattern and the second pattern by respective exposures thereof to corresponding at least single shots of an electron beam, at least one of the first and second patterns is extended in the direction perpendicular to the edge portions so that the patterns are provided with an overlap with the amount determined in accordance with the time interval between the respective shots of the electron beam to said edge portions.
摘要翻译：一种并入适用于制造VLSI半导体电路的高通量EB光刻中的方法。该方法包括以下步骤：通过使用具有高电流密度和/或高能量的电子束，提供被描绘成与根据其各自描绘之间的时间间隔确定的重叠的图案。当具有彼此接触的相应边缘部分的第一和第二图案以第一图案和第二图案的顺序通过其相应的曝光被描绘到相应的至少单个电子束的照射时，第一和第二图案中的至少一个第二图案在垂直于边缘部分的方向上延伸，使得图案设置有与根据电子束的各个镜头与所述边缘部分的各个镜头之间的时间间隔确定的量的重叠。

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