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61. 发明授权

US08223533B2 Magnetoresistive effect device and magnetic memory 有权
标题翻译：磁阻效应器和磁记忆体
公开(公告)号：US08223533B2
公开(公告)日：2012-07-17
申请号：US12556883
申请日：2009-09-10
申请人： Jyunichi Ozeki , Naoharu Shimomura , Sumio Ikegawa , Tadashi Kai , Masahiko Nakayama , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda , Eiji Kitagawa , Masatoshi Yoshikawa
发明人： Jyunichi Ozeki , Naoharu Shimomura , Sumio Ikegawa , Tadashi Kai , Masahiko Nakayama , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda , Eiji Kitagawa , Masatoshi Yoshikawa
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , G11C11/5607 , H01F10/123 , H01F10/3254 , H01F10/3277 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： A magnetic memory includes a magnetoresistive effect device comprising: a first ferromagnetic layer that has magnetic anisotropy in a direction perpendicular to a film plane thereof; a first nonmagnetic layer that is provided on the first ferromagnetic layer; a first reference layer that is provided on the first nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, has magnetization antiparallel to a magnetization direction of the first ferromagnetic layer, and has a film thickness that is 1/5.2 to 1/1.5 times as large as a film thickness of the first ferromagnetic layer in the direction perpendicular to the film plane; a second nonmagnetic layer that is provided on the first reference layer; and a storage layer that is provided on the second nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, and has a magnetization direction varied by spin-polarized electrons caused by flowing the current to the magnetoresistive effect device.
摘要翻译：磁存储器包括磁阻效应器件，包括：在垂直于其膜平面的方向上具有磁各向异性的第一铁磁层; 设置在第一铁磁层上的第一非磁性层; 设置在第一非磁性层上的第一参考层在垂直于其膜平面的方向上具有磁各向异性，具有与第一铁磁层的磁化方向反平行的磁化，并且具有1 / 5.2〜在第一铁磁层的垂直于膜平面的方向上的膜厚度的1/15倍; 设置在第一参考层上的第二非磁性层; 并且设置在第二非磁性层上的存储层在垂直于其膜平面的方向上具有磁各向异性，并且由于使电流流向磁阻效应器而引起的由自旋极化电子变化的磁化方向。

62. 发明授权

US08139405B2 Magnetoresistive element and magnetoresistive random access memory including the same 有权
标题翻译：磁阻元件和包括其的磁阻随机存取存储器
公开(公告)号：US08139405B2
公开(公告)日：2012-03-20
申请号：US13101818
申请日：2011-05-05
申请人： Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
发明人： Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11C11/00 , H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.
摘要翻译：本发明提供一种自旋注入型的低电阻磁阻元件。形成促进结晶的结晶促进层与具有非晶结构的界面磁性层接触，从而从隧道势垒层的侧面促进结晶化，并且调整隧道势垒层与界面磁性层之间的界面。通过这种布置，可以形成具有低电阻以获得期望电流值并且具有高TMR比的磁阻元件。

63. 发明授权

US08139403B2 Spin memory and spin transistor 有权
标题翻译：旋转记忆和自旋晶体管
公开(公告)号：US08139403B2
公开(公告)日：2012-03-20
申请号：US12885833
申请日：2010-09-20
申请人： Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Hisanori Aikawa , Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito
发明人： Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Hisanori Aikawa , Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito
IPC分类号： G11C11/15 , G11C29/82
CPC分类号： H01L29/66984 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/1677 , G11C11/1697 , H01L27/224 , H01L43/08
摘要： Certain embodiments provide a spin memory including a memory cell including a ferromagnetic stacked film that has a stacked structure in which a first ferromagnetic layer, a first nonmagnetic layer, a second ferromagnetic layer, a second nonmagnetic layer, and a third ferromagnetic layer are stacked in this order or reverse order, the third ferromagnetic layer and the second ferromagnetic layer being antiferromagnetically exchange-coupled via the second nonmagnetic layer. The ferromagnetic stacked film includes a current path in which a first and second write currents flow from the first ferromagnetic layer to the third ferromagnetic layer to write a first and second magnetization states into the first ferromagnetic layer respectively, and the second write current is higher than the first write current.
摘要翻译：某些实施例提供一种自旋存储器，其包括一个存储单元，该存储单元包括一个具有层叠结构的铁磁层叠膜，其中第一铁磁层，第一非磁性层，第二铁磁层，第二非磁性层和第三铁磁层堆叠在其中该顺序或反向顺序，第三铁磁层和第二铁磁层经由第二非磁性层反铁磁交换耦合。铁磁层叠膜包括电流路径，其中第一和第二写入电流从第一铁磁层流向第三铁磁层，以将第一和第二磁化状态分别写入第一铁磁层，并且第二写入电流高于第一次写入电流。

64. 发明申请

US20120008381A1 MAGNETORESISTIVE ELEMENT 有权
标题翻译：磁电元件
公开(公告)号：US20120008381A1
公开(公告)日：2012-01-12
申请号：US13233906
申请日：2011-09-15
申请人： Toshihiko NAGASE , Masatoshi Yoshikawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
发明人： Toshihiko NAGASE , Masatoshi Yoshikawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11C11/15 , G06K19/077 , H01L29/82
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≦Ms
摘要翻译：通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层。自由层的饱和磁化强度Ms满足关系0＆nlE; Ms <√{平方根超过（）} {Jw /（6＆pgr; At）}。 Jw是写入电流密度，t是自由层的厚度，A是常数。

65. 发明申请

US20110211389A1 MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY INCLUDING THE SAME 有权
公开(公告)号：US20110211389A1
公开(公告)日：2011-09-01
申请号：US13101818
申请日：2011-05-05
申请人： Masatoshi YOSHIKAWA , Eiji Kitagawa , Tadaomi Daibou , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
发明人： Masatoshi YOSHIKAWA , Eiji Kitagawa , Tadaomi Daibou , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11C11/00 , H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.

66. 发明授权

US07965544B2 Magnetic memory element, magnetic memory having said magnetic memory element, and method for driving magnetic memory 有权
标题翻译：磁存储元件，具有所述磁存储元件的磁存储器以及用于驱动磁存储器的方法
公开(公告)号：US07965544B2
公开(公告)日：2011-06-21
申请号：US12844144
申请日：2010-07-27
申请人： Eiji Kitagawa , Masatoshi Yoshikawa , Tatsuya Kishi , Hiroaki Yoda
发明人： Eiji Kitagawa , Masatoshi Yoshikawa , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11C11/00
CPC分类号： G11C11/1693 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： An inadvertent write can be prevented when a read is performed. The duration of the write current pulse for writing information in the magnetic memory layer is longer than the duration of the read current pulse for reading the information from the magnetic memory layer.
摘要翻译：当执行读取时，可以防止无意写入。用于在磁存储层中写入信息的写入电流脉冲的持续时间长于用于从磁存储层读取信息的读取电流脉冲的持续时间。

67. 发明授权

US07957184B2 Magnetoresistive element and magnetoresistive random access memory including the same 有权
标题翻译：磁阻元件和包括其的磁阻随机存取存储器
公开(公告)号：US07957184B2
公开(公告)日：2011-06-07
申请号：US12790171
申请日：2010-05-28
申请人： Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
发明人： Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11C11/15 , G11C11/00
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.
摘要翻译：本发明提供一种自旋注入型的低电阻磁阻元件。形成促进结晶的结晶促进层与具有非晶结构的界面磁性层接触，从而从隧道势垒层的侧面促进结晶化，并且调整隧道势垒层与界面磁性层之间的界面。通过这种布置，可以形成具有低电阻以获得期望电流值并且具有高TMR比的磁阻元件。

68. 发明授权

US07924607B2 Magnetoresistance effect element and magnetoresistive random access memory using the same 有权
标题翻译：磁阻效应元件和使用其的磁阻随机存取存储器
公开(公告)号：US07924607B2
公开(公告)日：2011-04-12
申请号：US12047749
申请日：2008-03-13
申请人： Masatoshi Yoshikawa , Eiji Kitagawa , Tadashi Kai , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
发明人： Masatoshi Yoshikawa , Eiji Kitagawa , Tadashi Kai , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11C11/00
CPC分类号： H01L43/10 , G11C11/161 , H01L27/228 , Y10S977/935
摘要： A magnetoresistive effect element includes a first magnetic layer, a second magnetic layer, and a first spacer layer. The first magnetic layer has an invariable magnetization direction. The second magnetic layer has a variable magnetization direction, and contains at least one element selected from Fe, Co, and Ni, at least one element selected from Ru, Rh, Pd, Ag, Re, Os, Ir, Pt, and Au, and at least one element selected from V, Cr, and Mn. The spacer layer is formed between the first magnetic layer and the second magnetic layer, and made of a nonmagnetic material. A bidirectional electric current flowing through the first magnetic layer, the spacer layer, and the second magnetic layer makes the magnetization direction of the second magnetic layer variable.
摘要翻译：磁阻效应元件包括第一磁性层，第二磁性层和第一间隔层。第一磁性层具有不变的磁化方向。第二磁性层具有可变的磁化方向，并且包含选自Fe，Co和Ni中的至少一种元素，选自Ru，Rh，Pd，Ag，Re，Os，Ir，Pt和Au中的至少一种元素，和选自V，Cr和Mn中的至少一种元素。间隔层形成在第一磁性层和第二磁性层之间，由非磁性材料制成。流过第一磁性层，间隔层和第二磁性层的双向电流使得第二磁性层的磁化方向可变。

69. 发明申请

US20080253174A1 MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY USING THE SAME 有权
标题翻译：磁阻效应元件和磁阻随机存取存储器
公开(公告)号：US20080253174A1
公开(公告)日：2008-10-16
申请号：US12047749
申请日：2008-03-13
申请人： Masatoshi YOSHIKAWA , Eiji Kitagawa , Tadashi Kai , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
发明人： Masatoshi YOSHIKAWA , Eiji Kitagawa , Tadashi Kai , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11C11/00 , H01L29/82
CPC分类号： H01L43/10 , G11C11/161 , H01L27/228 , Y10S977/935
摘要： A magnetoresistive effect element includes a first magnetic layer, a second magnetic layer, and a first spacer layer. The first magnetic layer has an invariable magnetization direction. The second magnetic layer has a variable magnetization direction, and contains at least one element selected from Fe, Co, and Ni, at least one element selected from Ru, Rh, Pd, Ag, Re, Os, Ir, Pt, and Au, and at least one element selected from V, Cr, and Mn. The spacer layer is formed between the first magnetic layer and the second magnetic layer, and made of a nonmagnetic material. A bidirectional electric current flowing through the first magnetic layer, the spacer layer, and the second magnetic layer makes the magnetization direction of the second magnetic layer variable.
摘要翻译：磁阻效应元件包括第一磁性层，第二磁性层和第一间隔层。第一磁性层具有不变的磁化方向。第二磁性层具有可变的磁化方向，并且包含选自Fe，Co和Ni中的至少一种元素，选自Ru，Rh，Pd，Ag，Re，Os，Ir，Pt和Au中的至少一种元素，和选自V，Cr和Mn中的至少一种元素。间隔层形成在第一磁性层和第二磁性层之间，由非磁性材料制成。流过第一磁性层，间隔层和第二磁性层的双向电流使得第二磁性层的磁化方向可变。

70. 发明授权

US07245524B2 Magnetic memory device and write method of magnetic memory device 有权
标题翻译：磁存储器件和磁存储器件的写入方法
公开(公告)号：US07245524B2
公开(公告)日：2007-07-17
申请号：US11255111
申请日：2005-10-21
申请人： Hiroaki Yoda , Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Tatsuya Kishi
发明人： Hiroaki Yoda , Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Tatsuya Kishi
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic memory device includes a first write wiring which runs in a first direction, a second write wiring which runs in a second direction different from the first direction, and a magnetoresistive element which is arranged at an intersection between the first and second write wirings, has a fixed layer, a recording layer, and a magnetoresistive layer sandwiched between the fixed layer and the recording layer, and has an axis of easy magnetization obliquely with respect to the first and second directions, the recording layer including a first ferromagnetic layer, a second ferromagnetic layer, and a first nonmagnetic layer sandwiched between the first and second ferromagnetic layers, in which first magnetization of the first ferromagnetic layer and second magnetization of the second ferromagnetic layer are ferromagnetically coupled, and a ferro-coupling constant C of a ferromagnetic coupling is 0.0001 erg/cm2≦C≦0.2 erg/cm2.
摘要翻译：一种磁存储器件包括沿第一方向延伸的第一写入布线，沿与第一方向不同的第二方向延伸的第二写入布线和布置在第一和第二写入布线之间的交叉点处的磁阻元件，具有夹在固定层和记录层之间的固定层，记录层和磁阻层，并且具有相对于第一和第二方向倾斜的易磁化轴，记录层包括第一铁磁层，第一铁磁层和夹在第一和第二铁磁层之间的第一非磁性层，其中第一铁磁层的第一磁化和第二铁磁层的第二磁化被铁磁耦合，并且铁磁耦合的铁磁耦合常数C 为0.0001 erg / cm 2 <= C <= 0.2 ERG / CM 2。

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