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    • 61. 发明授权
    • Method and apparatus for performing exception processing routine in
pipeline processing
    • 在流水线处理中执行异常处理程序的方法和装置
    • US5938762A
    • 1999-08-17
    • US726753
    • 1996-10-07
    • Hiroshi HayakawaHarutsugu FukumotoHiroaki Tanaka
    • Hiroshi HayakawaHarutsugu FukumotoHiroaki Tanaka
    • G06F9/32G06F9/38G06F9/46
    • G06F9/322G06F9/3861
    • An information processing apparatus and method, such that when an interruption occurs in a microprocessor, an exception processing sequence control is started, a program condition of an interrupted program and an address of the interrupted program are saved in a RAM, a program address of a jump instruction is read out from an exception processing generating source and is set in a program counter, and the exception processing sequence control is stopped. Thereafter, a normal processing sequence control is started, the jump instruction is read out from a ROM, an address of an exception processing vector is calculated according to the jump instruction, the exception processing vector is read out from the ROM, a branch address of an exception processing routine indicated by the exception processing vector is set in the program counter, and an operation state of the microprocessor is branched to the exception processing routine. Thereafter, the normal processing sequence control is stopped, and the exception processing routine is performed in the exception processing sequence control.
    • 一种信息处理装置和方法,当在微处理器中发生中断时,开始异常处理顺序控制,中断程序的程序条件和中断程序的地址被保存在RAM中,程序地址 从异常处理生成源读出跳转指令,并将其设置在程序计数器中,并停止异常处理顺序控制。 此后,开始通常的处理顺序控制,从ROM读出跳转指令,根据跳转指令计算出异常处理向量的地址,从ROM中读出异常处理向量,分支地址 在程序计数器中设置由异常处理向量指示的异常处理程序,并且将微处理器的操作状态分支到异常处理程序。 此后,停止正常处理顺序控制,并且在异常处理顺序控制中执行异常处理程序。
    • 64. 发明授权
    • Logic operation circuit and carry look ahead adder
    • 逻辑运算电路并携带前瞻加法器
    • US5877973A
    • 1999-03-02
    • US806213
    • 1997-02-26
    • Koji KatoHarutsugu FukumotoHiroaki Tanaka
    • Koji KatoHarutsugu FukumotoHiroaki Tanaka
    • G06F7/50G06F7/506G06F7/508
    • G06F7/506G06F7/508
    • An 8-bit CLA adder is constructed for inputting 4 lower bits a3:0,b3:0 and 4 upper bits a7:4,b7:4 of two input signals to the two 4-bit full adders 2,12 and a carry c-1 to the lowest bit the full adder of the first-stage 2 to generate carries c3,c7 correspondint to the third and seventh bit of the input signals from a carry generation signal g7:0 and a carry propagation signal p7:0 generated by the both adders 2,12 and the carry c-1. The full adder of the second-stage 12 is constructed to add the 4 upper bits a7:4,b7:4 with setting a carry-in as 0 so as to generate a temporary summing signal sz7:4. A logical circuit 14 generates a true sum of 4 upper bits from a carry c3 to the third bit to the forth bit, a temporary sum sz7:4 and a carry propagation signal p7:4 generated by the full adder of the second-stage 12.
    • 一个8位CLA加法器被构造用于将两个输入信号的4个低位位a3:0,b3:0和4个高位位a7:4,b7:4输入到两个4位全加器2,12和一个进位c -1到第一级2的全加器的最低位,以产生载波c3,c7,对应于来自进位产生信号g7:0的输入信号的第三和第七位以及由...生成的进位传播信号p7:0 两个加法器2,12和进位c-1。 第二级12的全加器被构造为通过将进位设置为0来添加4个高位位a7:4,b7:4,以产生临时求和信号sz7:4。 逻辑电路14产生从进位c3到第三位到第四位的4个高位的真和,由第二级12的全加器产生的临时和sz7:4和进位传播信号p7:4 。
    • 70. 发明授权
    • Sense amplifier for receiving read outputs from a semiconductor memory
array
    • 用于从半导体存储器阵列接收读出输出的读出放大器
    • US5422854A
    • 1995-06-06
    • US104912
    • 1993-08-12
    • Tetsuo HiranoTakahiro YanagiHiroaki Tanaka
    • Tetsuo HiranoTakahiro YanagiHiroaki Tanaka
    • G11C17/00G11C16/06G11C16/28H01L27/10G11C7/00
    • G11C16/28
    • Output signals, representing data read out from a memory cell array comprising a plurality of memory cells arranged in a matrix of m rows and n columns, each cell comprising an EPROM transistor, are fed to a sense amplifier. A row of the memory cell array is selected by signals SRl-SRm coming from a row decoder. The output of the selected row is taken out by a column select transistor selected by signals SCl-SCn from a column decoder before being fed to the sense amplifier. The sense amplifier comprises a memory cell output detecting circuit having a first load transistor for receiving output read out from the memory cell array and a dummy cell output detecting circuit having a second load transistor to which dummy cell equivalent to the memory cell is connected. The circuit of the first load transistor and that of the second load transistor form a current mirror circuit. The sense amplifier also comprises a sense amplifier output evaluation circuit having differential amplifiers which transmit output voltages of the memory cell output detecting circuit and of the dummy cell output detecting circuit to reflect the respective currents running through the first and second load transistors.
    • 输出信号,表示从包括以m行和n列的矩阵排列的多个存储单元的存储单元阵列读出的数据,每个单元包括EPROM晶体管,被馈送到读出放大器。 存储单元阵列的一行由来自行解码器的信号SR1-SRm选择。 所选行的输出在被馈送到读出放大器之前由列解码器由信号SCl-SCn选择的列选择晶体管取出。 读出放大器包括:存储单元输出检测电路,具有用于接收从存储单元阵列读出的输出的第一负载晶体管;以及具有第二负载晶体管的虚设单元输出检测电路,虚拟单元与该存储单元相连。 第一负载晶体管和第二负载晶体管的电路形成电流镜电路。 读出放大器还包括具有差分放大器的读出放大器输出评估电路,差分放大器传输存储单元输出检测电路和虚拟单元输出检测电路的输出电压,以反映通过第一和第二负载晶体管流过的相应电流。