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61. 发明授权

US5920778A Read-only memory cell arrangement and method for its production 失效
标题翻译：只读存储单元布置及其生产方法
公开(公告)号：US5920778A
公开(公告)日：1999-07-06
申请号：US913740
申请日：1997-09-23
申请人： Wolfgang Rosner , Wolfgang Krautschneider , Franz Hofmann , Lothar Risch
发明人： Wolfgang Rosner , Wolfgang Krautschneider , Franz Hofmann , Lothar Risch
IPC分类号： H01L21/8246 , H01L27/112
CPC分类号： H01L27/11273 , H01L27/112
摘要： In a read-only memory cell arrangement having first memory cells which contain a vertical MOS transistor, and having second memory cells which do not contain vertical MOS transistors, the memory cells are arranged along opposite flanks of strip-shaped parallel insulation trenches (16). The width of the insulation trenches (16) is preferably equal to their separation, so that the memory cell arrangement can be produced with a space requirement of 2F.sup.2 per memory cell, F being the minimum structure size in the respective technology.
摘要翻译： PCT No.PCT / DE96 / 00614 Sec。 371日期1997年9月23日 102（e）1997年9月23日PCT PCT 1996年4月9日PCT公布。公开号WO96 / 3351300 日期1996年10月24日在具有包含垂直MOS晶体管的第一存储单元且具有不包含垂直MOS晶体管的第二存储单元的只读存储单元布置中，存储单元沿着带状平行的相对侧布置绝缘沟槽（16）。绝缘沟槽（16）的宽度优选等于它们的间隔，使得可以以每个存储单元的空间要求为2F2来生产存储单元布置，F是相应技术中的最小结构尺寸。

62. 发明授权

US5821591A High density read only memory cell configuration and method for its production 失效
标题翻译：高密度只读存储单元配置及其生产方法
公开(公告)号：US5821591A
公开(公告)日：1998-10-13
申请号：US794566
申请日：1997-02-03
申请人： Wolfgang Krautschneider , Franz Hofmann , Wolfgang Roesner
发明人： Wolfgang Krautschneider , Franz Hofmann , Wolfgang Roesner
IPC分类号： H01L21/8246 , H01L27/112 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L27/1128 , H01L27/112
摘要： A memory cell configuration includes first memory cells with planar MOS transistors and second memory cells with vertical MOS transistors. The planar MOS transistors are disposed on the bottom of and on the crown of parallel, strip-like trenches. The vertical MOS transistors are disposed on the side walls of the trenches. The memory cell configuration can be produced with a mean area requirement for each memory cell of 1 F.sup.2, where F is the minimum structure size.
摘要翻译：存储单元配置包括具有平面MOS晶体管的第一存储单元和具有垂直MOS晶体管的第二存储单元。平面MOS晶体管设置在平行的带状沟槽的底部和顶部上。垂直MOS晶体管设置在沟槽的侧壁上。存储单元配置可以用1 F2的每个存储单元的平均面积要求来生成，其中F是最小结构尺寸。

63. 发明授权

US5559353A Integrated circuit structure having at least one CMOS-NAND gate and method for the manufacture thereof 失效
标题翻译：具有至少一个CMOS-NAND门的集成电路结构及其制造方法
公开(公告)号：US5559353A
公开(公告)日：1996-09-24
申请号：US332737
申请日：1994-11-01
申请人： Lothar Risch , Thomas Vogelsang , Franz Hofmann , Karl Hofmann
发明人： Lothar Risch , Thomas Vogelsang , Franz Hofmann , Karl Hofmann
IPC分类号： H01L21/8238 , H01L21/762 , H01L27/092 , H03K19/0948 , H01L29/78
CPC分类号： H03K19/0948 , H01L21/76294 , H01L27/0922
摘要： A first MOS transistor and a second MOS transistor are connected in series with a first complementary MOS transistor and a second complementary MOS transistor that are connected in parallel with one another. The transistors are each realized as a vertical layer sequence that forms the source, channel and drain and that which has a sidewall at which a gate dielectric and a gate electrode are arranged. The complementary MOS transistors connected in parallel with one another are realized in a common layer sequence of the source, channel and drain. The layer sequences that form the series-connected transistors are arranged above one another. The circuit structure is manufactured by epitaxal definition of the layer sequences, such as by molecular beam epitaxy.
摘要翻译：第一MOS晶体管和第二MOS晶体管与彼此并联连接的第一互补MOS晶体管和第二互补MOS晶体管串联连接。晶体管各自被实现为形成源极，沟道和漏极的垂直层序列，并且其具有设置栅极电介质和栅电极的侧壁。在源极，沟道和漏极的公共层序列中实现彼此并联连接的互补MOS晶体管。形成串联晶体管的层序列彼此重叠。电路结构通过层序列的上层定义（例如通过分子束外延）来制造。

64. 发明授权

US4964668A Top for vehicles, particularly passenger cars 失效
标题翻译：特别是乘用车
公开(公告)号：US4964668A
公开(公告)日：1990-10-23
申请号：US400718
申请日：1989-08-30
申请人： Franz Hofmann
发明人： Franz Hofmann
IPC分类号： B60J7/12
CPC分类号： B60J7/1226
摘要： For a top of a passenger car, a noise/thermal insulating intermediate layer and an interior ceiling are arranged inside an exterior top covering of the top for muffling noise and for achieving an effective thermal protection against heat and coldness. So that an inflating of the top covering is avoided during a driving operation at speed, the top covering, supporting layers of the intermediate layer and the interior ceiling are attached to a plurality of transversely extending bows of the top.
摘要翻译：对于乘用车的顶部，噪音/隔热中间层和内部天花板布置在顶部的外部顶部覆盖物内，用于消声噪声并且实现有效的热保护以防止热和冷。因此，在速度的驾驶操作期间避免了顶盖的膨胀，中间层的顶盖，支撑层和内部天花板附接到顶部的多个横向延伸的弓。

65. 发明授权

US4713180A Ceramic filter and method for using same 失效
标题翻译：陶瓷过滤器及其使用方法
公开(公告)号：US4713180A
公开(公告)日：1987-12-15
申请号：US701135
申请日：1985-02-13
申请人： Franz Hofmann , Hans G. Trapp , Rolf Rietzscher , Jurgen Otto , Wolfgang Kaettlitz , Gerd Trinki
发明人： Franz Hofmann , Hans G. Trapp , Rolf Rietzscher , Jurgen Otto , Wolfgang Kaettlitz , Gerd Trinki
IPC分类号： B01D39/20 , B22D1/00 , B22D43/00 , C04B38/00 , C21C1/00 , C21C7/00 , C22B4/00 , C22B9/02 , B01D29/32
CPC分类号： C21C1/00 , B01D39/2093 , C04B38/00 , C21C7/00 , C22B9/023 , Y02P10/234
摘要： A ceramic filter for filtering molten iron is disclosed. The ceramic filter is made from a high-melting ceramic material having an open-celled foam structure, a variable bulk density in different portions of the filter, and at least one afflux surface. In order to filter molten iron efficiently, the ratio of filter surface to filter volume should be in the range of about 0.0003 to 9 m.sup.2 /cm.sup.3, the specific filter resistance should be in the range of about 0.1 to 0.9 bar-cm at a flow rate of 5 m.sup.3 /hour, and the pressure loss .DELTA.p across the filter should depend on the specific resistance .rho., the filter length, and the surface area of the afflux plane F in accordance with the relationship: ##EQU1## A method for filtering molten iron using this ceramic filter is also disclosed. In this method, the ceramic filter is located near the point in the casting system where the molten iron has its greatest kinetic energy. The molten iron is first caused to flow tangentially by the afflux plane of the ceramic filter and then is deflected to create turbulence directly before the afflux plane of the filter.
摘要翻译：公开了一种用于过滤铁水的陶瓷过滤器。陶瓷过滤器由具有开孔泡沫结构的高熔点陶瓷材料制成，过滤器的不同部分的可变堆积密度以及至少一个附着面。为了有效地过滤铁水，过滤器表面与过滤器体积的比例应在约0.0003至9m 2 / cm 3的范围内，特定过滤器阻力在流动下应在约0.1至0.9bar-cm的范围内速率为5立方米/小时，并且过滤器上的压力损失ΔΔTA应根据以下关系依赖于附着平面F的电阻率rho，滤波器长度和表面积：过滤方法还公开了使用该陶瓷过滤器的铁水。在该方法中，陶瓷过滤器位于铸铁系统中靠近熔融铁具有最大动能的点处。首先使铁水通过陶瓷过滤器的塌陷面切向流动，然后被偏转以在过滤器的附着平面之前直接产生湍流。

66. 发明授权

US4231984A Process for the production of molded phosphate bonded refractory articles 失效
$Process for the production of molded phosphate bonded refractory articles$
标题翻译：用于生产模压磷酸盐结合耐火材料的方法
公开(公告)号：US4231984A
公开(公告)日：1980-11-04
申请号：US892020
申请日：1978-03-31
申请人： Franz Hofmann
发明人： Franz Hofmann
IPC分类号： C04B38/00 , B22C1/18 , B28B1/30 , B28B1/38 , C04B35/63 , B28B1/16
CPC分类号： B22C1/185 , C04B35/6309
摘要： There is disclosed a process for applying a refractory filler and a hydrate of Al(H.sub.2 PO.sub.4).sub.3 or polyphosphates as a binder to a single or multi-layered carrier material to form a single or multi-layered, thin-walled structure subsequently hardened on the carrier material. The hardening is preferably conducted at a temperature below 400.degree. C. There is thus obtained a phosphate-bonded, thin-walled shaped article which is refractory at temperatures above 1300.degree. C.
摘要翻译：公开了将耐火填料和Al（H 2 PO 4）3或多磷酸盐的水合物作为粘合剂施加到单层或多层载体材料上以形成单层或多层薄壁结构的方法，随后在载体材料。硬化优选在低于400℃的温度下进行。因此，获得了在1300℃以上耐火材料的磷酸盐键合的薄壁形状的制品。

67. 发明授权

US4113238A Drum mixer 失效
标题翻译：鼓式搅拌机
公开(公告)号：US4113238A
公开(公告)日：1978-09-12
申请号：US729979
申请日：1976-10-06
申请人： Franz Hofmann , Franz Szatmari
发明人： Franz Hofmann , Franz Szatmari
IPC分类号： B01F9/00 , B01F9/08 , B22C5/04 , B28C5/18
CPC分类号： B01F9/08 , B01F9/0007 , B22C5/0459 , B01F2009/0059 , B01F2009/0063
摘要： Rotary mixing apparatus particularly suitable for treatment of foundry sand having a drum mounted for rotation about an axis which is horizontal, or at least approximately horizontal, operates to treat bulk material such as foundry sand which is placed within the rotating drum. Stationary deflection apparatus is arranged within the drum in the upper range thereof and a rotating impact rotor is mounted within the drum so that as the drum rotates and the material contained therein is propelled into the upper region of the drum it is deflected by the deflection apparatus and formed into a downwardly falling jet which is directed at the rotating impact rotor.

68. 发明授权

US08702921B2 Biosensors array and method for operating a biosensor array 有权
标题翻译：用于操作生物传感器阵列的生物传感器阵列和方法
公开(公告)号：US08702921B2
公开(公告)日：2014-04-22
申请号：US11019948
申请日：2004-12-21
申请人： Alexander Frey , Franz Hofmann , Birgit Holzapfl , Christian Paulus , Meinrad Schienle , Roland Thewes
发明人： Alexander Frey , Franz Hofmann , Birgit Holzapfl , Christian Paulus , Meinrad Schienle , Roland Thewes
IPC分类号： G01N27/26
CPC分类号： G01N27/3276
摘要： A biosensor array having a substrate, a plurality of biosensor zones arranged on the substrate, each of which has a first terminal and a second terminal, at least one drive line and at least one detection line, the at least one drive line being electrically insulated from the at least one detection line. In each case the first terminal of each biosensor zone is coupled to precisely one of the at least one drive line and the second terminal of each biosensor zone is coupled to precisely one of the at least one detection line, and at least one of the at least one drive line and at least one of the at least one detection line is coupled to at least two of the biosensor zones. The biosensor array also has a drive unit for providing an electrical drive signal, a detection unit for detecting an electrical detection signal resulting from the electrical drive signal, and a selection unit that couples the drive unit to the drive line of a biosensor zone to be selected and the detection unit to the detection line of the biosensor zone to be selected, whereby the biosensor zone is selected.
摘要翻译：一种具有衬底的生物传感器阵列，布置在所述衬底上的多个生物传感器区域，每个生物传感器区域具有第一端子和第二端子，至少一条驱动线路和至少一条检测线路，所述至少一条驱动线路电绝缘从所述至少一个检测线。在每种情况下，每个生物传感器区域的第一端子被精确地耦合到至少一条驱动线路中的一条，并且每个生物传感器区域的第二端口精确地耦合到至少一条检测线路中的至少一条，至少一个驱动线和所述至少一个检测线中的至少一个耦合到所述生物传感器区域中的至少两个。生物传感器阵列还具有用于提供电驱动信号的驱动单元，用于检测由电驱动信号产生的电检测信号的检测单元，以及将驱动单元与生物传感器区域的驱动线连接的选择单元，将选择的检测单元和生物传感器区域的检测线进行选择，从而选择生物传感器区域。

69. 发明授权

US08480877B2 Sensor arrangement comprising an electrode for detecting diffused loaded particles 有权
公开(公告)号：US08480877B2
公开(公告)日：2013-07-09
申请号：US11597296
申请日：2005-05-24
申请人： Alexander Frey , Franz Hofmann
发明人： Alexander Frey , Franz Hofmann
IPC分类号： G01N27/327 , G01N27/416
CPC分类号： G01N33/5438 , C12Q1/6825 , G01N27/3277
摘要： A sensor arrangement for detecting particles potentially contained in an analyte is disclosed. The arrangement includes a substrate; at least one sensor electrode which is arranged on and/or in the substrate and on which scavenger molecules, which hybridize with particles that are potentially contained in an analyte and are to be detected, are immobilized, electrically charged particles generated by hybridization being detectable on the at least one sensor electrode; and at least one diffusion detection electrode which is arranged in a surrounding region of the at least one sensor electrode and is embodied in such a way that it detects electrically charged particles that are generated by hybridization and can be diffused away by the at least one sensor electrode.

70. 发明授权

US07719059B2 Fin field effect transistor arrangement and method for producing a fin field effect transistor arrangement 有权
标题翻译：翅片场效应晶体管布置及其制造方法
公开(公告)号：US07719059B2
公开(公告)日：2010-05-18
申请号：US11588868
申请日：2006-10-27
申请人： Franz Hofmann , Erhard Landgraf , Richard Johannes Luyken
发明人： Franz Hofmann , Erhard Landgraf , Richard Johannes Luyken
IPC分类号： H01L21/84 , H01L21/8238 , H01L27/12
CPC分类号： H01L21/845 , H01L27/1211 , H01L29/66795 , H01L29/785 , H01L29/78636
摘要： A fin field effect transistor arrangement comprises a substrate and a first fin field effect transistor on and/or in the substrate. The first fin field effect transistor includes a fin in which a channel region is formed between a first source/drain region and a second source/drain region and above which a gate region is formed. A second fin field effect transistor is provided on and/or in the substrate including a fin in which a channel region is formed between a first source/drain region and a second source/drain region and above which a gate region is formed. The second fin field effect transistor is arranged laterally alongside the first fin field effect transistor, wherein a height of the fin of the first fin field effect transistor is greater than a height of the fin of the second fin field effect transistor.
摘要翻译：鳍状场效应晶体管布置包括衬底和衬底上和/或衬底中的第一鳍状场效应晶体管。第一鳍状场效应晶体管包括鳍状物，其中在第一源极/漏极区域和第二源极/漏极区域之间形成沟道区域，并且在其上形成栅极区域。第二鳍状场效应晶体管设置在衬底上和/或衬底中，包括在第一源极/漏极区域和第二源极/漏极区域之间形成沟道区域的鳍片，并且在其上形成栅极区域。第二鳍状场效应晶体管沿第一鳍状场效应晶体管横向布置，其中第一鳍状场效应晶体管的鳍的高度大于第二鳍状场效应晶体管的鳍的高度。

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