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61. 发明授权

US5964947A Removable pumping channel liners within a chemical vapor deposition chamber 失效
标题翻译：化学气相沉积室内可拆卸的泵送通道衬管
公开(公告)号：US5964947A
公开(公告)日：1999-10-12
申请号：US857847
申请日：1997-05-16
申请人： Jun Zhao , Ashok Sinha , Avi Tepman , Mei Chang , Lee Luo , Alex Schreiber , Talex Sajoto , Stefan Wolff , Charles Dornfest , Michal Danek
发明人： Jun Zhao , Ashok Sinha , Avi Tepman , Mei Chang , Lee Luo , Alex Schreiber , Talex Sajoto , Stefan Wolff , Charles Dornfest , Michal Danek
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/509 , C23C16/54 , H01J37/32 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45508 , C23C16/4411 , C23C16/4412 , C23C16/4585 , C23C16/46 , C23C16/5096 , C23C16/54 , H01J37/3244 , H01J37/32477 , H01J37/32834 , H01J2237/2001
摘要： A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material in a pumping channel exhausting the chamber. The pumping channel is lined with various elements, some of which are electrically floating and which are designed so that conductive material deposited on these elements do not deleteriously affect a plasma generated for processing the wafer.
摘要翻译：衬底处理室，特别是用于导电材料的热沉积和随后执行的等离子体工艺的化学气相沉积（CVD）室。本发明减少了在排出室的泵送通道中导电材料的热沉积。泵浦通道衬有各种元件，其中一些元件是电浮动的，并且被设计成使得沉积在这些元件上的导电材料不会有害地影响用于处理晶片的等离子体。

62. 发明授权

US5882419A Chemical vapor deposition chamber 失效
标题翻译：化学气相沉积室
公开(公告)号：US5882419A
公开(公告)日：1999-03-16
申请号：US939962
申请日：1997-09-29
申请人： Ashok Sinha , Mei Chang , Ilya Perlov , Karl Littau , Alan Morrison , Lawrence Chung-Lai Lei
发明人： Ashok Sinha , Mei Chang , Ilya Perlov , Karl Littau , Alan Morrison , Lawrence Chung-Lai Lei
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4412 , C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10S438/935
摘要： An improved deposition chamber deposits useful layers on substrates. The improved chamber includes a substrate edge protection system which, in combination with a purge gas, protects selected portions of the edge and underside of the substrate from the deposition gas while preventing the creation of a masked area on the substrate edge. The substrate is supported on a solid receiving plate, and a positioning assembly aligns the substrate to the receiving plate. In some embodiments, the invention may include a stem interconnected to the substrate, a heat limiting member disposed about the stem, and a shroud extending about the stem.
摘要翻译：改进的沉积室将有用的层沉积在基底上。改进的腔室包括衬底边缘保护系统，其与净化气体组合地保护衬底的边缘和下侧的选定部分与沉积气体同时防止在衬底边缘上产生掩蔽区域。基板支撑在固体接收板上，并且定位组件将基板对准接收板。在一些实施例中，本发明可以包括连接到基板的杆，围绕杆设置的限热构件和围绕杆延伸的护罩。

63. 发明授权

US5817576A Utilization of SiH.sub.4 soak and purge in deposition processes 失效
标题翻译：在沉积过程中利用SiH4浸泡和吹扫
公开(公告)号：US5817576A
公开(公告)日：1998-10-06
申请号：US743929
申请日：1996-11-05
申请人： Meng Chu Tseng , Mei Chang , Ramanujapuram A. Srinivas , Klaus-Dieter Rinnen , Moshe Eizenberg , Susan Telford
发明人： Meng Chu Tseng , Mei Chang , Ramanujapuram A. Srinivas , Klaus-Dieter Rinnen , Moshe Eizenberg , Susan Telford
IPC分类号： C23C16/44 , C23C16/02 , C23C16/42 , C23C16/56 , H01L21/205 , H01L21/28 , H01L21/285
CPC分类号： C23C16/4408 , C23C16/0218 , C23C16/42 , C23C16/56 , H01L21/28518 , Y10S438/905
摘要： A method of processing a substrate, such as a semiconductor wafer, in a vacuum processing chamber includes the steps of depositing a material on a surface of the substrate using a gas mixture, and purging the chamber of residual gases by flowing SiH.sub.4 into the chamber. Preferably, WSi.sub.x is deposited on a semiconductor wafer using a mixture comprising WF.sub.6, dichlorosilane and a noble gas, and the chamber is subsequently purged of residual WF.sub.6 and dichlorosilane by flowing SiH.sub.4 into the chamber. A further method of processing a substrate in a vacuum processing chamber includes the step of conditioning the chamber by flowing SiH.sub.4 into the chamber prior to depositing a material on the surface of the substrate. Semiconductor wafers processed according to the inventive method are characterized by more uniform sheet resistance values and reduced film stress. A vacuum processing apparatus is also provided for practicing methods of the invention and includes a chamber, means for depositing a material, such as WSi.sub.x, on a surface of a substrate disposed within the chamber, and means for purging the chamber with SiH.sub.4.
摘要翻译：在真空处理室中处理诸如半导体晶片的衬底的方法包括以下步骤：使用气体混合物将材料沉积在衬底的表面上，并且通过使SiH 4流入腔室来清洗残留气体室。优选地，使用包含WF 6，二氯硅烷和惰性气体的混合物将WSix沉积在半导体晶片上，随后通过使SiH 4流入室中来清洗残留的WF 6和二氯硅烷。在真空处理室中处理衬底的另一种方法包括通过在将衬底沉积在衬底的表面上之前将SiH 4流入腔室来调节腔室的步骤。根据本发明方法处理的半导体晶片的特征在于更均匀的薄层电阻值和薄膜应力减小。还提供了用于本发明的实施方法的真空处理装置，并且包括室，用于在布置在室内的基板的表面上沉积诸如WSix的材料的装置以及用SiH 4吹扫室的装置。

64. 发明授权

US5780360A Purge in silicide deposition processes dichlorosilane 失效
标题翻译：二氯硅烷在硅化物沉积工艺中的清洗
公开(公告)号：US5780360A
公开(公告)日：1998-07-14
申请号：US666976
申请日：1996-06-20
申请人： Jennifer Meng Chu Tseng , Mei Chang , Ramanujapuram A. Srinivas , Klaus-Dieter Rinnen , Moshe Eizenberg , Susan Weihar Telford
发明人： Jennifer Meng Chu Tseng , Mei Chang , Ramanujapuram A. Srinivas , Klaus-Dieter Rinnen , Moshe Eizenberg , Susan Weihar Telford
IPC分类号： C23C16/44 , C23C16/02 , C23C16/42 , C23C16/56 , H01L21/205 , H01L21/28 , H01L21/285
CPC分类号： C23C16/4408 , C23C16/0218 , C23C16/42 , C23C16/56 , H01L21/28518 , Y10S438/905
摘要： A method of processing a substrate, such as a semiconductor wafer, in a vacuum processing chamber includes the steps of depositing a material on a surface of the substrate using a gas mixture, and purging the chamber of residual gases by flowing SiH.sub.4 into the chamber. Preferably, WSi.sub.x is deposited on a semiconductor wafer using a mixture comprising WF.sub.6, dichlorosilane and a noble gas, and the chamber is subsequently purged of residual WF.sub.6 and dichlorosilane by flowing SiH.sub.4 into the chamber. A further method of processing a substrate in a vacuum processing chamber includes the step of conditioning the chamber by flowing SiH.sub.4 into the chamber prior to depositing a material on the surface of the substrate. Semiconductor wafers processed according to the inventive method are characterized by more uniform sheet resistance values and reduced film stress. A vacuum processing apparatus is also provided for practicing methods of the invention and includes a chamber, means for depositing a material, such as WSi.sub.x, on a surface of a substrate disposed within the chamber, and means for purging the chamber with SiH.sub.4.
摘要翻译：在真空处理室中处理诸如半导体晶片的衬底的方法包括以下步骤：使用气体混合物将材料沉积在衬底的表面上，并且通过使SiH 4流入腔室来清洗残留气体室。优选地，使用包含WF 6，二氯硅烷和惰性气体的混合物将WSix沉积在半导体晶片上，随后通过使SiH 4流入室中来清洗残留的WF 6和二氯硅烷。在真空处理室中处理衬底的另一种方法包括通过在将衬底沉积在衬底的表面上之前将SiH 4流入腔室来调节腔室的步骤。根据本发明方法处理的半导体晶片的特征在于更均匀的薄层电阻值和薄膜应力减小。还提供了用于本发明的实施方法的真空处理装置，并且包括室，用于在布置在室内的基板的表面上沉积诸如WSix的材料的装置以及用SiH 4吹扫室的装置。

65. 发明授权

US5773100A PECVD of silicon nitride films 失效
标题翻译：氮化硅膜的PECVD
公开(公告)号：US5773100A
公开(公告)日：1998-06-30
申请号：US746178
申请日：1996-11-06
申请人： Mei Chang , David N. K. Wang , John M. White , Dan Maydan
发明人： Mei Chang , David N. K. Wang , John M. White , Dan Maydan
IPC分类号： C23C16/50 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/509 , B05D3/06
CPC分类号： C23C16/45565 , C23C16/345 , C23C16/455 , C23C16/5096
摘要： An inlet gas manifold for a vacuum deposition chamber incorporates inlet apertures which increase in diameter or cross-section transverse to the direction of gas flow. The aperture configuration increases the dissociation gases such as nitrogen and, thus increases the rate of silicon nitride deposition provided by nitrogen gas chemistry, without requiring the use of reactants such as ammonia. While one could use ammonia in the deposition gas chemistry if desired, the process provides the option of completely eliminating ammonia. The inlet manifold containing the increasing-diameter gas inlet holes provides enhanced control of the process and the deposited film.
摘要翻译：用于真空沉积室的入口气体歧管包括入口孔，其直径或横截面横向于气体流动方向增加。孔径构造增加了解离气体如氮气，从而增加了由氮气化学提供的氮化硅沉积速率，而不需要使用诸如氨的反应物。虽然如果需要，可以在沉积气体化学中使用氨，该方法提供完全消除氨的选择。包含增加直径的气体入口孔的入口歧管提供对过程和沉积膜的增强的控制。

66. 发明授权

US5695568A Chemical vapor deposition chamber 失效
标题翻译：化学气相沉积室
公开(公告)号：US5695568A
公开(公告)日：1997-12-09
申请号：US200862
申请日：1994-02-23
申请人： Ashok Sinha , Mei Chang , Ilya Perlov , Karl Littau , Alan Morrison , Lawrence Chung-Lai Lei
发明人： Ashok Sinha , Mei Chang , Ilya Perlov , Karl Littau , Alan Morrison , Lawrence Chung-Lai Lei
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4412 , C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10S438/935
摘要： An improved deposition chamber deposits useful layers on substrates. The improved chamber includes a substrate edge protection system which, in combination with a purge gas, protects selected portions of the edge and underside of the substrate from the deposition gas while preventing the creation of a masked area on the substrate edge. The substrate is supported on a solid receiving plate, which is supported by a stem having a heat limiting member and a shroud to protect the stem and a positioning assembly aligns the substrate to the receiving plate.
摘要翻译：改进的沉积室将有用的层沉积在基底上。改进的腔室包括衬底边缘保护系统，其与净化气体组合地保护衬底的边缘和下侧的选定部分与沉积气体同时防止在衬底边缘上产生掩蔽区域。基底支撑在固体接受板上，固体接收板由具有限热构件和护罩的杆支撑，以保护杆，并且定位组件将衬底对准接收板。

67. 发明授权

US5516367A Chemical vapor deposition chamber with a purge guide 失效
标题翻译：具有清洗导管的化学气相沉积室
公开(公告)号：US5516367A
公开(公告)日：1996-05-14
申请号：US342670
申请日：1994-11-21
申请人： Lawrence C. Lei , Ilya Perlov , Karl A. Littau , Alan F. Morrison , Mei Chang , Ashok K. Sinha
发明人： Lawrence C. Lei , Ilya Perlov , Karl A. Littau , Alan F. Morrison , Mei Chang , Ashok K. Sinha
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4412 , C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10S438/935
摘要： Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.
摘要翻译：公开了真空CVD室，其在衬底上提供更均匀地沉积的薄膜。用于衬底的腔室基座安装件被电阻加热，单个线圈在基座的所有侧面上牢固地接触基座的金属，从而在基座的基座上提供均匀的温度。吹扫气体管线连接到基座外部的基座上的开口，以防止衬底的边缘和背面污染。在加工过程中，真空进料管将基板安装到基座板上。耐火吹扫引导件或多个安置销保持固定的间隙通道，以使净化气体沿着晶片的边缘并入腔室的处理区域中。排气泵板改善了来自腔室的废气排放的均匀性。

68. 发明授权

US5316278A Clamping ring apparatus for processing semiconductor wafers 失效
标题翻译：用于处理半导体晶圆的夹紧环装置
公开(公告)号：US5316278A
公开(公告)日：1994-05-31
申请号：US947212
申请日：1992-09-18
申请人： Semyon Sherstinsky , Mei Chang , Charles C. Harris , Alfred Mak , James F. Roberts , Simon W. Tam , Wen T. Chang
发明人： Semyon Sherstinsky , Mei Chang , Charles C. Harris , Alfred Mak , James F. Roberts , Simon W. Tam , Wen T. Chang
IPC分类号： H01L21/687 , B25B1/00
CPC分类号： H01L21/68721 , Y10S269/903
摘要： An improved clamping ring apparatus is disclosed comprising a clamping ring means for yieldably engaging a generally circular semiconductor wafer to peripherally clamp the wafer to a support pedestal to provide a peripheral seal between the wafer and the surface of the pedestal facing the wafer, adjacent the generally circular end edge of the wafer by providing a central generally circular opening in the clamping ring and a series of slots which radially extend outwardly from the central opening in the clamping ring means to thereby divide the inner portion of the clamping ring means into a series of yieldable fingers inwardly extending toward the central opening in the clamping ring means.In one embodiment, the sidewalls of the slots are slanted with respect to the planar surface of the clamping ring means at an angle sufficient, with respect to the thickness of the clamping ring means and the width of the slot,, to prevent a ray or a particle from a plasma, traveling in a direction perpendicular to the plane of the surface of the clamping ring means from striking surfaces underlying the clamping ring means, through the slot.
摘要翻译：公开了一种改进的夹紧环装置，其包括夹紧环装置，用于可屈服地接合大致圆形的半导体晶片以将晶片周边夹持到支撑基座，以在晶片与面对晶片的基座的表面之间提供周边密封，通过在夹紧环中提供中心大致圆形的开口，以及从夹紧环装置中的中心开口径向向外延伸的一系列槽，从而将夹紧环装置的内部分成一系列可伸缩的手指向内延伸朝向夹紧环装置中的中心开口。在一个实施例中，槽的侧壁相对于夹紧环装置的平坦表面以相对于夹紧环装置的厚度和槽的宽度足够的角度倾斜以防止光线或来自等离子体的颗粒通过狭槽从垂直于夹紧环装置的表面的平面的方向通过夹紧环装置下方的冲击表面行进。

69. 发明授权

US5043299A Process for selective deposition of tungsten on semiconductor wafer 失效
标题翻译：在半导体晶片上选择性沉积钨的工艺
公开(公告)号：US5043299A
公开(公告)日：1991-08-27
申请号：US444485
申请日：1989-12-01
申请人： Mei Chang , David N. Wang
发明人： Mei Chang , David N. Wang
IPC分类号： C23C16/02 , C23C16/04 , C23C16/06 , C23C16/54 , H01L21/28 , H01L21/285 , H01L21/768
CPC分类号： H01L21/76879 , H01L21/28562 , Y10S148/051 , Y10S438/906 , Y10S438/908
摘要： An improved process for the selective deposition of tungsten on a masked semiconductor wafer is disclosed which comprises cleaning the surfaces of the wafer in an air-tight cleaning chamber, then transferring the cleaned wafer to a vacuum deposition chamber such as a CVD chamber for selective deposition of tungsten thereon without exposing the cleaned wafer to conditions which would recontaminate the cleaned wafer prior to said deposition, and then selectively depositing tungsten on the unmasked surfaces of the cleaned wafer.

70. 发明授权

US09269584B2 N-metal film deposition with initiation layer 有权
标题翻译：具有起始层的N金属膜沉积
公开(公告)号：US09269584B2
公开(公告)日：2016-02-23
申请号：US13525610
申请日：2012-06-18
申请人： Seshadri Ganguli , Xinliang Lu , Atif Noori , Maitreyee Mahajani , Shih Chung Chen , Mei Chang
发明人： Seshadri Ganguli , Xinliang Lu , Atif Noori , Maitreyee Mahajani , Shih Chung Chen , Mei Chang
IPC分类号： H01L21/44 , H01L21/28 , H01L29/49 , H01L21/02
CPC分类号： H01L21/28088 , H01L21/02697 , H01L29/4966
摘要： Provided are methods of depositing N-Metals onto a substrate. Methods include first depositing an initiation layer. The initiation layer may comprise or consist of cobalt, tantalum, nickel, titanium or TaAlC. These initiation layers can be used to deposit TaCx.
摘要翻译：提供了将N-金属沉积到基底上的方法。方法包括首先沉积起始层。起始层可以包括钴，钽，镍，钛或TaAlC。这些起始层可用于沉积TaCx。

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