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61. 发明申请

US20050263066A1 Apparatus for electroless deposition of metals onto semiconductor substrates 有权
标题翻译：用于将金属无电沉积到半导体衬底上的装置
公开(公告)号：US20050263066A1
公开(公告)日：2005-12-01
申请号：US11043442
申请日：2005-01-26
申请人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Russell Ellwanger , Ian Pancham , Ramakrishna Cheboli , Timothy Weidman
发明人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Russell Ellwanger , Ian Pancham , Ramakrishna Cheboli , Timothy Weidman
IPC分类号： B05D3/10 , C23C18/16 , C23F1/00 , H01L21/00 , H01L21/306
CPC分类号： H01L21/67155 , C23C18/1628 , H01L21/67167 , H01L21/6719 , H01L21/6723
摘要： An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure. The system also includes a substrate a fluid delivery system that is configured to deliver a processing fluid by use of a spraying process to a substrate mounted in the processing enclosure.
摘要翻译：提供无电沉积系统。该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。无电沉积站包括环境受控的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站，以及位于在第一和第二处理站之间传送衬底。该系统还包括位于主机上并被配置为访问处理外壳内部的基板传送机器人。该系统还包括一个流体输送系统，该流体输送系统被配置成通过使用喷射过程将处理流体输送到安装在处理外壳中的基板。

62. 发明申请

US20050133374A1 Method and apparatus for acid and additive breakdown removal from copper electrodeposition bath 审中-公开
标题翻译：从铜电沉积浴中酸和添加剂分解去除的方法和装置
公开(公告)号：US20050133374A1
公开(公告)日：2005-06-23
申请号：US10739891
申请日：2003-12-18
申请人： Nicolay Kovarsky , Dmitry Lubomirsky
发明人： Nicolay Kovarsky , Dmitry Lubomirsky
IPC分类号： C25D21/18 , C25D21/22
CPC分类号： C25D21/22
摘要： A method and apparatus for removing waste material from a plating solution is disclosed. The invention generally provides a plating cell having an electrolyte inlet and an electrolyte drain, an electrolyte storage unit in fluid communication with the electrolyte inlet, and a diffusion dialysis chamber in fluid communication with the electrolyte drain and the electrolyte storage unit. The diffusion dialysis chamber is generally configured to receive at least a portion of used electrolyte solution and remove waste material therefrom in order to provide a refreshed electrolyte solution to the electrolyte storage unit. A method generally includes supplying an electrolyte solution to a copper plating cell, plating copper onto a substrate in the plating cell with the electrolyte solution, removing used electrolyte solution from the plating cell, and refreshing a portion of the used electrolyte solution with a diffusion dialysis device.
摘要翻译：公开了一种从电镀液中除去废料的方法和装置。本发明通常提供一种具有电解质入口和电解液排出物的电镀槽，与电解质入口流体连通的电解质储存单元和与电解液排出物和电解质储存单元流体连通的扩散透析室。扩散透析室通常被配置为接收至少一部分使用的电解质溶液并从其中除去废物，以便向电解质储存单元提供刷新的电解质溶液。一种方法通常包括向镀铜电池提供电解质溶液，用电解液将铜镀在镀覆电池中的基底上，从电镀槽中除去使用的电解液，并用扩散透析刷新一部分所用电解质溶液设备。

63. 发明申请

US20050082172A1 Copper replenishment for copper plating with insoluble anode 审中-公开
标题翻译：用不溶性阳极镀铜的铜补充
公开(公告)号：US20050082172A1
公开(公告)日：2005-04-21
申请号：US10690408
申请日：2003-10-21
申请人： Nicolay Kovarsky , Dmitry Lubomirsky , Alexander Hoermann , Saravjeet Singh
发明人： Nicolay Kovarsky , Dmitry Lubomirsky , Alexander Hoermann , Saravjeet Singh
IPC分类号： C25D21/14 , C25D21/18
CPC分类号： C25D21/14 , C25D21/18
摘要： In one embodiment, the present invention generally provides an apparatus and method for dispersing a chemical reagent into a plating solution. The apparatus generally includes a tank for containing the plating solution and a horizontal vessel in fluid communication with the tank, wherein the horizontal vessel has an input and an output. The apparatus further includes at least one shelf contained inside the horizontal vessel, wherein the at least one shelf extends between the input and the output and the chemical reagent rests on the at least one shelf. In another embodiment, the present invention generally provides an apparatus for dispersing a chemical reagent to a plating solution comprising a tank for containing the plating solution and a vertical vessel in fluid communication with the tank. A lower portion of the vertical vessel includes an inlet and an injector port and an upper portion of the vertical vessel includes an outlet and a manifold. The chemical reagent is positioned between the inlet and the outlet.
摘要翻译：在一个实施方案中，本发明通常提供了将化学试剂分散到电镀溶液中的装置和方法。该装置通常包括用于容纳电镀溶液的罐和与罐流体连通的水平容器，其中水平容器具有输入和输出。该装置还包括容纳在水平容器内的至少一个搁架，其中至少一个货架在输入和输出之间延伸，化学试剂搁置在至少一个货架上。在另一个实施方案中，本发明通常提供一种用于将化学试剂分散到包含用于容纳电镀溶液的罐和与罐流体连通的垂直容器的电镀溶液的装置。垂直容器的下部包括入口和注射器端口，并且垂直容器的上部包括出口和歧管。化学试剂位于入口和出口之间。

64. 发明授权

US09285168B2 Module for ozone cure and post-cure moisture treatment 有权
标题翻译：用于臭氧固化和后固化水分处理的模块
公开(公告)号：US09285168B2
公开(公告)日：2016-03-15
申请号：US13247687
申请日：2011-09-28
申请人： Dmitry Lubomirsky , Jay D. Pinson, II , Kirby H. Floyd , Adib Khan , Shankar Venkataraman
发明人： Dmitry Lubomirsky , Jay D. Pinson, II , Kirby H. Floyd , Adib Khan , Shankar Venkataraman
IPC分类号： F26B25/00 , H01L21/67 , H01L21/02 , H01L21/3105 , C23C16/40 , C23C16/56
CPC分类号： F26B25/004 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02337 , H01L21/3105 , H01L21/67178 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67207
摘要： A substrate processing system that has a plurality of deposition chambers, and one or more robotic arms for moving a substrate between one or more of a deposition chamber, load lock holding area, and a curing and treatment module. The substrate curing and treatment module is attached to the load-lock substrate holding area, and may include: The curing chamber for curing a dielectric layer in an atmosphere comprising ozone, and a treatment chamber for treating the cured dielectric layer in an atmosphere comprising water vapor. The chambers may be vertically aligned, have one or more access doors, and may include a heating system to adjust the curing and/or heating chambers between two or more temperatures respectively.
摘要翻译：具有多个沉积室的基板处理系统和用于在沉积室，加载锁定保持区域和固化和处理模块中的一个或多个之间移动基板的一个或多个机器人臂。衬底固化和处理模块附接到负载锁定衬底保持区域，并且可以包括：用于在包含臭氧的气氛中固化电介质层的固化室，以及用于在包含水的气氛中处理固化的电介质层的处理室汽。腔室可以垂直对准，具有一个或多个通道门，并且可以包括加热系统，以分别在两个或更多个温度之间调节固化和/或加热室。

65. 发明申请

US20150380215A1 METHOD OF PATTERNING A LOW-K DIELECTRIC FILM 审中-公开
标题翻译：绘制低K电介质膜的方法
公开(公告)号：US20150380215A1
公开(公告)日：2015-12-31
申请号：US14849296
申请日：2015-09-09
申请人： Srinivas D. Nemani , Jeremiah T. Pender , Qingjun Zhou , Dmitry Lubomirsky , Sergey G. Belostotskiy
发明人： Srinivas D. Nemani , Jeremiah T. Pender , Qingjun Zhou , Dmitry Lubomirsky , Sergey G. Belostotskiy
IPC分类号： H01J37/32
摘要： Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.
摘要翻译：描述了低k介电膜图案的方法。在一个实例中，图案化低k电介质膜的方法包括在低k电介质层之上形成和图案化掩模层，低k电介质层设置在衬底之上。该方法还涉及用无氮等离子体工艺来修饰低k电介质层的暴露部分。该方法还涉及通过远程等离子体处理去除低k电介质层的修改部分对掩模层和低k电介质层的未修改部分有选择性。

66. 发明授权

US09165783B2 Method of patterning a low-k dielectric film 有权
标题翻译：图案化低k电介质膜的方法
公开(公告)号：US09165783B2
公开(公告)日：2015-10-20
申请号：US14059996
申请日：2013-10-22
申请人： Srinivas D. Nemani , Jeremiah T. Pender , Qingjun Zhou , Dmitry Lubomirsky , Sergey G. Belostotskiy
发明人： Srinivas D. Nemani , Jeremiah T. Pender , Qingjun Zhou , Dmitry Lubomirsky , Sergey G. Belostotskiy
IPC分类号： H01L21/302 , H01L21/3105 , H01L21/311 , H01L21/02
CPC分类号： H01J37/3244 , H01J37/32009 , H01L21/02126 , H01L21/3105 , H01L21/31116 , H01L21/31138
摘要： Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.
摘要翻译：描述了低k介电膜图案的方法。在一个实例中，图案化低k电介质膜的方法包括在低k电介质层之上形成和图案化掩模层，低k电介质层设置在衬底之上。该方法还涉及用无氮等离子体工艺来修饰低k电介质层的暴露部分。该方法还涉及通过远程等离子体处理去除低k电介质层的修改部分对掩模层和低k电介质层的未修改部分有选择性。

67. 发明授权

US08741775B2 Method of patterning a low-K dielectric film 有权
标题翻译：图案化低K电介质膜的方法
公开(公告)号：US08741775B2
公开(公告)日：2014-06-03
申请号：US13187224
申请日：2011-07-20
申请人： Srinivas D. Nemani , Yifeng Zhou , Dmitry Lubomirsky , Ellie Yieh
发明人： Srinivas D. Nemani , Yifeng Zhou , Dmitry Lubomirsky , Ellie Yieh
IPC分类号： H01L21/3105
CPC分类号： H01L21/3105 , H01L21/02126 , H01L21/02203 , H01L21/31116 , H01L21/31138 , H01L21/31144
摘要： Methods of patterning low-k dielectric films are described. For example, a method includes forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. Exposed portions of the low-k dielectric layer are modified with a plasma process. The modified portions of the low-k dielectric layer are removed selective to the mask layer and unmodified portions of the low-k dielectric layer.
摘要翻译：描述了低k介电膜图案的方法。例如，一种方法包括在低k电介质层之上形成和图案化掩模层，低k电介质层设置在衬底之上。低等离子体介质层的露出部分用等离子体工艺进行改性。低k电介质层的修改部分被选择性地去除低k电介质层的掩模层和未修饰部分。

68. 发明申请

US20140120726A1 METHOD OF PATTERNING A LOW-K DIELECTRIC FILM 有权
标题翻译：绘制低K电介质膜的方法
公开(公告)号：US20140120726A1
公开(公告)日：2014-05-01
申请号：US14059996
申请日：2013-10-22
申请人： Srinivas D. Nemani , Jeremiah T. Pender , Qingjun Zhou , Dmitry Lubomirsky , Sergey G. Belostotskiy
发明人： Srinivas D. Nemani , Jeremiah T. Pender , Qingjun Zhou , Dmitry Lubomirsky , Sergey G. Belostotskiy
IPC分类号： H01L21/308 , H01L21/02 , H01L21/3065
CPC分类号： H01J37/3244 , H01J37/32009 , H01L21/02126 , H01L21/3105 , H01L21/31116 , H01L21/31138
摘要： Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.
摘要翻译：描述了低k介电膜图案的方法。在一个实例中，图案化低k电介质膜的方法包括在低k电介质层之上形成和图案化掩模层，低k电介质层设置在衬底之上。该方法还涉及用无氮等离子体工艺来修饰低k电介质层的暴露部分。该方法还涉及通过远程等离子体处理去除低k电介质层的修改部分对掩模层和低k电介质层的未修改部分有选择性。

69. 发明申请

US20130288483A1 METHODS AND APPARATUS FOR CONTROLLING SUBSTRATE UNIFORMITY 有权
标题翻译：用于控制基板均匀性的方法和装置
公开(公告)号：US20130288483A1
公开(公告)日：2013-10-31
申请号：US13766238
申请日：2013-02-13
申请人： S.M. Reza Sadjadi , Dmitry Lubomirsky , Hamid Noorbakhsh , John Zheng Ye , David H. Quach , Sean S. Kang
发明人： S.M. Reza Sadjadi , Dmitry Lubomirsky , Hamid Noorbakhsh , John Zheng Ye , David H. Quach , Sean S. Kang
IPC分类号： H01L21/02 , H01L21/3065
CPC分类号： H01L22/20 , C23C14/22 , C23C16/44 , H01J37/32082 , H01J37/32467 , H01J37/32522 , H01J37/32541 , H01J37/32605 , H01J37/32642 , H01J37/32697 , H01J2237/334 , H01L21/02104 , H01L21/02274 , H01L21/3065 , H01L21/67069 , H01L21/67109 , H01L21/67248 , H01L21/6833 , H01L21/68735
摘要： A dynamically tunable process kit, a processing chamber having a dynamically tunable process kit, and a method for processing a substrate using a dynamically tunable process kit are provided. The dynamically tunable process kit allows one or both of the electrical and thermal state of the process kit to be changed without changing the phyisical construction of the process kit, thereby allowing plasma properties, and hence processing results, to be easily changed without replacing the process kit. The processing chamber having a dynamically tunable process kit includes a chamber body that includes a portion of a conductive side wall configured to be electrically controlled, and a process kit. The processing chamber includes a first control system operable to control one or both of an electrical and thermal state of the process kit and a second control system operable to control an electrical state of the portion of the side wall.
摘要翻译：提供了一种动态可调工艺套件，具有动态可调工艺套件的处理室以及使用动态可调工艺套件处理衬底的方法。动态可调工艺套件允许改变工艺套件的电气和热状态，而不改变工艺套件的植物结构，从而允许容易地改变等离子体性能，因此处理结果而不需要更换过程套件具有可动态调节的处理套件的处理室包括腔室主体，其包括被配置为电控制的导电侧壁的一部分，以及处理套件。处理室包括可操作以控制处理套件的电气和热状态中的一个或两个的第一控制系统和可操作以控制侧壁部分的电气状态的第二控制系统。

70. 发明授权

US08409355B2 Low profile process kit 有权
标题翻译：低调的流程套件
公开(公告)号：US08409355B2
公开(公告)日：2013-04-02
申请号：US12109187
申请日：2008-04-24
申请人： Muhammad M. Rasheed , Teruki Iwashita , Hiroshi Otake , Yuki Koga , Kazutoshi Maehara , Xinglong Chen , Sudhir Gondhalekar , Dmitry Lubomirsky
发明人： Muhammad M. Rasheed , Teruki Iwashita , Hiroshi Otake , Yuki Koga , Kazutoshi Maehara , Xinglong Chen , Sudhir Gondhalekar , Dmitry Lubomirsky
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/4585 , C23C16/4581 , H01J37/32082 , H01J37/32642 , H01L21/68735
摘要： Embodiments of process kits for substrate supports of semiconductor substrate process chambers are provided herein. In some embodiments, a process kit for a semiconductor process chamber may include an annular body being substantially horizontal and having an inner and an outer edge, and an upper and a lower surface; an inner lip disposed proximate the inner edge and extending vertically from the upper surface; and an outer lip disposed proximate the outer edge and on the lower surface, and having a shape conforming to a surface of the substrate support pedestal. In some embodiments, a process kit for a semiconductor process chamber my include an annular body having an inner and an outer edge, and having an upper and lower surface, the upper surface disposed at a downward angle of between about 5-65 degrees in an radially outward direction from the inner edge toward the outer edge.
摘要翻译：本文提供了半导体衬底处理室的衬底支撑件的工艺组件的实施例。在一些实施例中，用于半导体处理室的处理套件可以包括基本上水平的并具有内部和外部边缘以及上部和下部表面的环形体; 靠近所述内边缘并从所述上表面垂直延伸的内唇缘; 以及设置在所述外边缘和所述下表面附近并且具有与所述基板支撑基座的表面相符的形状的外唇缘。在一些实施例中，用于半导体处理腔室的处理套件包括具有内边缘和外边缘的环形体，并具有上表面和下表面，上表面以约5-65度的向下角度设置在从内缘朝向外缘的径向向外方向。

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