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61. 发明授权

US07326961B2 Semiconductor device and manufacturing method therefor 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07326961B2
公开(公告)日：2008-02-05
申请号：US11107822
申请日：2005-04-18
申请人： Shunpei Yamazaki , Atsuo Isobe , Tamae Takano , Hidekazu Miyairi
发明人： Shunpei Yamazaki , Atsuo Isobe , Tamae Takano , Hidekazu Miyairi
IPC分类号： H01L29/72
CPC分类号： H01L21/02691 , H01L21/02678 , H01L21/02683 , H01L21/2022 , H01L27/12 , H01L27/1281
摘要： To provide devices relating to a manufacturing method for a semiconductor device using a laser crystallization method, which is capable of reducing a cost involved in a design change, preventing a grain boundary from developing in a channel formation region of a TFT, and preventing a remarkable reduction in mobility of the TFT, a decrease in an ON current, and an increase in an OFF current due to the grain boundary and to a semiconductor device formed by using the manufacturing method. In a semiconductor device according to the present invention, among a plurality of TFTs formed on a base film, some TFTs are electrically connected to form logic elements. The plurality of logic elements are used to form a circuit. The base film has a plurality of projective portions having a rectangular or stripe shape. Island-like semiconductor films included in each of the plurality of TFTs are formed between the plurality of projective portions and also, are crystallized by a laser light scanned in a longitudinal direction of the projective portions.
摘要翻译：为了提供与使用激光结晶法的半导体器件的制造方法相关的装置，其能够降低设计变化中涉及的成本，防止晶界在TFT的沟道形成区域中发展，并且防止显着 TFT的迁移率的降低，导通电流的降低以及由于晶界引起的关断电流的增加以及通过使用该制造方法形成的半导体器件。在根据本发明的半导体器件中，在形成在基膜上的多个TFT中，一些TFT电连接形成逻辑元件。多个逻辑元件用于形成电路。基膜具有多个具有矩形或条状的突出部分。包含在多个TFT中的多个TFT中的岛状半导体膜形成在多个投影部之间，并且通过沿着投影部的纵向扫描的激光而结晶化。

62. 发明申请

US20050136581A1 Semiconductor memory cell and semiconductor memory device 有权
标题翻译：半导体存储单元和半导体存储器件
公开(公告)号：US20050136581A1
公开(公告)日：2005-06-23
申请号：US10933388
申请日：2004-09-03
申请人： Kiyoshi Kato , Atsuo Isobe , Hidekazu Miyairi , Shunpei Yamazaki
发明人： Kiyoshi Kato , Atsuo Isobe , Hidekazu Miyairi , Shunpei Yamazaki
IPC分类号： H01L21/28 , H01L21/336 , H01L21/77 , H01L21/8247 , H01L21/84 , H01L27/105 , H01L27/115 , H01L27/12 , H01L29/04 , H01L29/786 , H01L29/788 , H01L21/8234
CPC分类号： H01L21/28273 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11546 , H01L27/11568 , H01L27/12 , H01L27/1281 , H01L29/04 , H01L29/42332 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , H01L29/7881 , H01L29/792
摘要： An insulating film with a linear concave portion is formed and a semiconductor film is formed thereon by deposition. The semiconductor film is irradiated with laser light to melt the semiconductor film and the melted semiconductor is poured into the concave portion, where it is crystallized. This makes distortion or stress accompanying crystallization concentrate on other regions than the concave portion. A surface of this crystalline semiconductor film is etched away, thereby forming in the concave portion a crystalline semiconductor film which is covered with side walls of the concave portion from the sides and which has no other grain boundaries than twin crystal. TFTs and memory TFTs having this crystalline semiconductor film as their channel regions are highly reliable, have high field effect mobility, and are less fluctuated in characteristic. Accordingly, a highly reliable semiconductor memory device which can operate at high speed is obtained.
摘要翻译：形成具有线状凹部的绝缘膜，通过沉积在其上形成半导体膜。半导体膜用激光照射以熔化半导体膜，将熔融的半导体注入凹部，结晶化。这使得伴随结晶的变形或应力集中在除了凹部之外的其它区域上。蚀刻掉该晶体半导体膜的表面，从而在凹部形成从侧面被凹部的侧壁覆盖的结晶半导体膜，并且与半晶不具有其他晶界。具有该晶体半导体膜作为其沟道区的TFT和存储TFT高度可靠，具有高的场效应迁移率，并且特性波动较小。因此，可以获得能高速运转的高度可靠的半导体存储器件。

63. 发明申请

US20050029519A1 TV set and digital camera 有权
标题翻译：电视机和数码相机
公开(公告)号：US20050029519A1
公开(公告)日：2005-02-10
申请号：US10941823
申请日：2004-09-16
申请人： Shunpei Yamazaki , Kiyoshi Kato , Atsuo Isobe , Hidekazu Miyairi , Hideomi Suzawa , Yutaka Shionoiri , Hiroyuki Miyake
发明人： Shunpei Yamazaki , Kiyoshi Kato , Atsuo Isobe , Hidekazu Miyairi , Hideomi Suzawa , Yutaka Shionoiri , Hiroyuki Miyake
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L29/04
CPC分类号： H01L21/02609 , H01L21/2026 , H01L27/12 , H01L27/1281 , H01L29/66757 , H01L29/78621 , H01L29/78675 , H01L29/78696
摘要： A semiconductor element which is capable of operating at a high speed, high in an electric current drive capability, and small in fluctuation among a plurality of elements, and a semiconductor device including the semiconductor element are provided. The semiconductor element has a first crystalline semiconductor region including plural crystal orientations without practically having a grain boundary on an insulating surface, the first crystalline semiconductor region being provided to be jointly connected to a conductive region including the first crystalline semiconductor region and a second crystalline semiconductor region, in which the conductive region is provided astride insulating films extending in a linear stripe pattern.
摘要翻译：提供能够高速运行，电流驱动能力高，多个元件之间波动小的半导体元件，以及包括半导体元件的半导体器件。半导体元件具有包括多个晶体取向的第一晶体半导体区域，而绝缘表面实际上不具有晶界，第一晶体半导体区域被设置为共同连接到包括第一晶体半导体区域的导电区域和第二晶体半导体区域区域，其中导电区域被设置成跨过线性条纹图案延伸的绝缘膜。

64. 发明授权

US08696808B2 Laser irradiation apparatus 有权
标题翻译：激光照射装置
公开(公告)号：US08696808B2
公开(公告)日：2014-04-15
申请号：US11514969
申请日：2006-09-05
申请人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Satoshi Murakami , Mai Akiba
发明人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Satoshi Murakami , Mai Akiba
IPC分类号： C30B1/04
CPC分类号： H01L27/1285 , B23K26/0604 , B23K26/0608 , B23K26/066 , B23K26/0738 , H01L21/02683 , H01L21/02691 , H01L21/2026 , H01L21/76894 , H01L27/1296 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L51/5284 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is crystallized, and a beam spot is made to hit the region to be scanned, thereby partially crystallizing the semiconductor film. Each portion with low output energy of the beam spot is shielded by a slit. In the present invention, the laser light is not scanned and irradiated onto the entire surface of the semiconductor film but is scanned such that at least each indispensable portion is crystallized to a minimum. With the construction described above, it becomes possible to save time taken to irradiate the laser light onto each portion to be removed through the patterning after the crystallization of the semiconductor film.
摘要翻译：根据掩模掌握半导体膜上的应该留在基板上的每个区域。然后，确定要用激光扫描的每个区域，使得至少要通过图案化获得的区域结晶，并且使光点撞击要扫描的区域，从而部分地使半导体膜结晶。光束点的低输出能量的每个部分被狭缝屏蔽。在本发明中，激光不被扫描并照射到半导体膜的整个表面上，而被扫描，使得至少每个不可缺少的部分被最终结晶化。利用上述结构，可以在半导体膜结晶之后通过图案化节省将激光照射到要去除的每个部分上所需的时间。

65. 发明授权

US07105048B2 Laser irradiation apparatus 失效
公开(公告)号：US07105048B2
公开(公告)日：2006-09-12
申请号：US10305367
申请日：2002-11-27
申请人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Satoshi Murakami , Mai Akiba
发明人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Satoshi Murakami , Mai Akiba
IPC分类号： C30B1/02
CPC分类号： H01L27/1285 , B23K26/0604 , B23K26/0608 , B23K26/066 , B23K26/0738 , H01L21/02683 , H01L21/02691 , H01L21/2026 , H01L21/76894 , H01L27/1296 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L51/5284 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is crystallized, and a beam spot is made to hit the region to be scanned, thereby partially crystallizing the semiconductor film. Each portion with low output energy of the beam spot is shielded by a slit. In the present invention, the laser light is not scanned and irradiated onto the entire surface of the semiconductor film but is scanned such that at least each indispensable portion is crystallized to a minimum. With the construction described above, it becomes possible to save time taken to irradiate the laser light onto each portion to be removed through the patterning after the crystallization of the semiconductor film.

66. 发明授权

US07915099B2 Beam irradiation apparatus, beam irradiation method, and method for manufacturing semiconductor device 有权
标题翻译：光束照射装置，光束照射方法以及半导体装置的制造方法
公开(公告)号：US07915099B2
公开(公告)日：2011-03-29
申请号：US11785966
申请日：2007-04-23
申请人： Shunpei Yamazaki , Koichiro Tanaka , Hidekazu Miyairi
发明人： Shunpei Yamazaki , Koichiro Tanaka , Hidekazu Miyairi
IPC分类号： H01L21/00 , H01L21/84 , H01L21/20 , H01L21/36
CPC分类号： H01L21/02683 , B23K26/082 , B23K26/0821 , H01L21/02691 , H01L21/2026 , H01L27/1285
摘要： The speed of the laser scanned by the scanning means such as a galvanometer mirror or a polygon mirror is not constant in the center portion and in the end portion of the scanning width. As a result, the object, for example an amorphous semiconductor film, is irradiated with the excessive energy and therefore there is a risk that the amorphous semiconductor film is peeled. In the present invention, in the case where the laser spot of the energy beam output continuously on the irradiated object is scanned by moving it back and forth with the use of the scanning means or the like, the beam is irradiated to the outside of the element-forming region when the scanning speed of the spot is not the predetermined value, for example when the speed is not constant, and accelerates, decelerates, or is zero, for example in the positions where the scanning direction changes, or where the scanning starts or ends.
摘要翻译：由扫描装置如电流计镜或多面镜扫描的激光的速度在扫描宽度的中央部分和末端部分中不是恒定的。结果，物体（例如非晶半导体膜）被过量的能量照射，因此存在非晶半导体膜剥离的风险。在本发明中，在通过使用扫描装置等来前后移动在被照射物体上连续输出的能量束的激光光斑进行扫描的情况下，将光束照射到当点的扫描速度不是预定值时，例如当速度不恒定并且例如在扫描方向改变的位置加速，减速或为零时，或者扫描开始或结束

67. 发明授权

US07749907B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07749907B2
公开(公告)日：2010-07-06
申请号：US11841361
申请日：2007-08-20
申请人： Hidekazu Miyairi , Koichiro Tanaka , Hironobu Shoji , Shunpei Yamazaki
发明人： Hidekazu Miyairi , Koichiro Tanaka , Hironobu Shoji , Shunpei Yamazaki
IPC分类号： H01L21/461
CPC分类号： H01L27/1288 , H01L21/0337 , H01L21/3086 , H01L21/32139 , H01L27/1214 , H01L29/66765 , H01L29/78633
摘要： A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the layer having a light-transmitting property. When the light absorbing layer absorbs energy of the laser beam, due to emission of gas that is within the light absorbing layer, or sublimation, evaporation, or the like of the light absorbing layer, a part of the light absorbing layer and a part of the layer having a light-transmitting property in contact with the light absorbing layer are removed. By using the remaining part of the layer having a light-transmitting property or the remaining part of the light absorbing layer as a mask and etching the first layer, the first layer can be processed into a desired shape.
摘要翻译：第一层形成在衬底上，在第一层上形成光吸收层，并且在光吸收层上形成具有透光性的层。通过具有透光性的层，用激光束选择性地照射光吸收层。当光吸收层吸收激光束的能量时，由于光吸收层内的气体的发射或者光吸收层的升华，蒸发等，一部分光吸收层和除去与光吸收层接触的透光性的层。通过使用具有透光性的层的剩余部分或光吸收层的剩余部分作为掩模，并蚀刻第一层，可以将第一层加工成所需的形状。

68. 发明授权

US07560397B2 Laser irradiation method and method of manufacturing a semiconductor device 有权
标题翻译：激光照射方法及半导体装置的制造方法
公开(公告)号：US07560397B2
公开(公告)日：2009-07-14
申请号：US11709200
申请日：2007-02-22
申请人： Shunpei Yamazaki , Hiroshi Shibata , Koichiro Tanaka , Masaaki Hiroki , Mai Akiba
发明人： Shunpei Yamazaki , Hiroshi Shibata , Koichiro Tanaka , Masaaki Hiroki , Mai Akiba
IPC分类号： H01L21/26
CPC分类号： H01L21/02691 , H01L21/02678 , H01L21/02683 , H01L21/2026 , H01L27/12 , H01L27/1281 , H01L27/1285 , H01L29/66757 , H01L29/78621 , H01L29/78675 , Y10S438/942
摘要： A method of manufacturing a semiconductor device is provided which uses a laser crystallization method capable of increasing substrate processing efficiency. An island-like semiconductor film including one or more islands is formed by patterning (sub-island). The sub-island is then irradiated with laser light to improve its crystallinity, and thereafter patterned to form an island. From pattern information of a sub-island, a laser light scanning path on a substrate is determined such that at least the sub-island is irradiated with laser light. In other words, the present invention runs laser light so as to obtain at least the minimum degree of crystallization of a portion that has to be crystallized, instead of irradiating the entire substrate with laser light.
摘要翻译：提供一种制造半导体器件的方法，其使用能够提高衬底处理效率的激光结晶方法。通过图案化（子岛）形成包括一个或多个岛的岛状半导体膜。然后用激光照射子岛以改善其结晶度，然后图案化以形成岛。从子岛的图案信息，确定基板上的激光扫描路径，使得至少使该子岛被激光照射。换句话说，本发明运行激光，以便至少获得必须结晶的部分的最小结晶度，而不是用激光照射整个基板。

69. 发明申请

US20070000428A1 Laser irradiation apparatus 有权
标题翻译：激光照射装置
公开(公告)号：US20070000428A1
公开(公告)日：2007-01-04
申请号：US11514969
申请日：2006-09-05
申请人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Satoshi Murakami , Mai Akiba
发明人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Satoshi Murakami , Mai Akiba
IPC分类号： C30B15/14
CPC分类号： H01L27/1285 , B23K26/0604 , B23K26/0608 , B23K26/066 , B23K26/0738 , H01L21/02683 , H01L21/02691 , H01L21/2026 , H01L21/76894 , H01L27/1296 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L51/5284 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is crystallized, and a beam spot is made to hit the region to be scanned, thereby partially crystallizing the semiconductor film. Each portion with low output energy of the beam spot is shielded by a slit. In the present invention, the laser light is not scanned and irradiated onto the entire surface of the semiconductor film but is scanned such that at least each indispensable portion is crystallized to a minimum. With the construction described above, it becomes possible to save time taken to irradiate the laser light onto each portion to be removed through the patterning after the crystallization of the semiconductor film.
摘要翻译：根据掩模掌握半导体膜上的应该留在基板上的每个区域。然后，确定要用激光扫描的每个区域，使得至少要通过图案化获得的区域结晶，并且使光点撞击要扫描的区域，从而部分地使半导体膜结晶。光束点的低输出能量的每个部分被狭缝屏蔽。在本发明中，激光不被扫描并照射到半导体膜的整个表面上，而被扫描，使得至少每个不可缺少的部分被最终结晶化。利用上述结构，可以在半导体膜结晶之后通过图案化节省将激光照射到要去除的每个部分上所需的时间。

70. 发明授权

US07050878B2 Semiconductror fabricating apparatus 有权
标题翻译：半导体制造装置
公开(公告)号：US07050878B2
公开(公告)日：2006-05-23
申请号：US10300927
申请日：2002-11-21
申请人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Mai Akiba
发明人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Mai Akiba
IPC分类号： G06F19/00
CPC分类号： H01L21/02678 , B23K26/04 , B23K26/0604 , B23K26/064 , B23K26/0648 , B23K26/0665 , B23K26/12 , B23K26/1224 , B23K26/123 , B23K26/127 , H01L21/02683 , H01L21/2026
摘要： Providing a semiconductor fabricating apparatus using a laser crystallization technique for enhancing the processing efficiency for substrate and for increasing the mobility of a semiconductor film. The semiconductor fabricating apparatus of multi-chamber system includes a film formation equipment for forming a semiconductor film, and a laser irradiation equipment. The laser irradiation equipment includes first means for controlling a laser irradiation position relative to an irradiation object, second means (laser oscillator) for emitting laser light, third means (optical system) for processing or converging the laser light, and fourth means for controlling the oscillation of the second means and for controlling the first means in a manner that a beam spot of the laser light processed by the third means may cover a place determined based on data on a mask configuration (pattern information).
摘要翻译：提供一种使用激光结晶技术的半导体制造装置，用于提高衬底的处理效率和增加半导体膜的迁移率。多室系统的半导体制造装置包括用于形成半导体膜的成膜设备和激光照射设备。激光照射设备包括用于控制相对于照射物体的激光照射位置的第一装置，用于发射激光的第二装置（激光振荡器），用于处理或会聚激光的第三装置（光学系统），以及用于控制第二装置的振荡和第一装置的控制，使得由第三装置处理的激光束的光斑可以覆盖基于掩模配置（图案信息）上的数据确定的位置。

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