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61. 发明授权

US06179709B2 In-situ monitoring of linear substrate polishing operations 失效
标题翻译：线性衬底抛光操作的原位监控
公开(公告)号：US06179709B2
公开(公告)日：2001-01-30
申请号：US09244816
申请日：1999-02-04
申请人： Fred C. Redeker , Manoocher Birang , Shijian Li , Sasson Somekh
发明人： Fred C. Redeker , Manoocher Birang , Shijian Li , Sasson Somekh
IPC分类号： B24B100
CPC分类号： B24B37/005 , B24B21/04 , B24B49/04 , B24B49/12 , H01L21/30625
摘要： A substrate polishing scheme (apparatus and method) is described according to which a polishing surface of a polishing sheet is driven in a generally linear direction by a drive mechanism, a surface of a substrate is held against the polishing surface of the polishing sheet by a polishing head, and the substrate is probed through the polishing sheet by a monitoring system.
摘要翻译：描述了基板抛光方案（装置和方法），根据该基板抛光方案，研磨片的抛光表面通过驱动机构在大致线性方向上被驱动，基板的表面通过一个抛光头，并且通过监视系统通过抛光片探测基板。

62. 发明授权

US6083344A Multi-zone RF inductively coupled source configuration 失效
标题翻译：多区域射频感应耦合源配置
公开(公告)号：US6083344A
公开(公告)日：2000-07-04
申请号：US865432
申请日：1997-05-29
申请人： Hiroji Hanawa , Tetsuya Ishikawa , Manus Wong , Shijian Li , Kaveh Niazi , Kenneth Smyth , Fred C. Redeker , Troy Detrick , Jay Dee Pinson, II
发明人： Hiroji Hanawa , Tetsuya Ishikawa , Manus Wong , Shijian Li , Kaveh Niazi , Kenneth Smyth , Fred C. Redeker , Troy Detrick , Jay Dee Pinson, II
IPC分类号： H01J37/32 , H05H1/00
CPC分类号： H01J37/32174 , H01J37/321
摘要： The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.
摘要翻译：本发明提供一种HDP-CVD工具，其使用能够在晶片上具有优异的间隙填充和覆盖膜沉积的掺杂和未掺杂的二氧化硅的同时沉积和溅射。本发明的工具包括：双RF区电感耦合等离子体源; 双区气体分配系统; 工具内的温度控制表面; 对称成形的涡轮分子抽水室体; 双冷却区静电吸盘; 全陶瓷/铝合金室; 和远程等离子体室清洁系统。

63. 发明授权

US6015591A Deposition method 失效
标题翻译：沉积法
公开(公告)号：US6015591A
公开(公告)日：2000-01-18
申请号：US23500
申请日：1998-02-13
申请人： Shijian Li , Fred C. Redeker , Tetsuya Ishikawa
发明人： Shijian Li , Fred C. Redeker , Tetsuya Ishikawa
IPC分类号： C23C16/44 , C23C16/455 , C23C16/50 , C23C16/507 , C23C16/509 , C23C16/517 , C23C16/52 , H01J37/32 , H01L21/205 , H01L21/31
CPC分类号： C23C16/507 , C23C16/4405 , C23C16/455 , C23C16/5096 , C23C16/517 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a vacuum chamber (18) which houses a substrate support (14). A set of first nozzles (34) have orifices (38) opening into the vacuum chamber in a circumferential pattern spaced apart from and generally overlying the periphery (40) of the substrate support. One or more seconds nozzle (56, 56a), positioned centrally above the substrate support, inject process gases into the vacuum chamber to improve deposition thickness uniformity. Deposition thickness uniformity is also improved by ensuring that the process gases are supplied to the first nozzles at the same pressure. If needed, enhanced cleaning of the nozzles can be achieved by slowly drawing a cleaning gas from within the vacuum chamber in a reverse flow direction through the nozzles using a vacuum pump (84).
摘要翻译：改进的沉积室（2）包括限定容纳衬底支撑件（14）的真空室（18）的壳体（4）。一组第一喷嘴（34）具有以与基板支撑件的周边（40）间隔开并且通常覆盖基板支撑件的周边（40）的圆周图案而开口进入真空室的孔口（38）。位于基板支架上方中心的一个或多个秒喷嘴（56,56a）将工艺气体注入真空室以改善沉积厚度均匀性。通过确保将工艺气体以相同的压力供应到第一喷嘴，也提高了沉积厚度均匀性。如果需要，可以通过使用真空泵（84）通过喷嘴沿反向流动方向从真空室内缓慢地抽取清洁气体来实现喷嘴的增强清洁。

64. 发明授权

US5865896A High density plasma CVD reactor with combined inductive and capacitive coupling 失效
标题翻译：具有组合电感和电容耦合的高密度等离子体CVD反应堆
公开(公告)号：US5865896A
公开(公告)日：1999-02-02
申请号：US766053
申请日：1996-12-16
申请人： Romuald Nowak , Kevin Fairbairn , Fred C. Redeker
发明人： Romuald Nowak , Kevin Fairbairn , Fred C. Redeker
IPC分类号： H01J37/32 , C23C16/00 , C23C14/00 , C23F1/02
CPC分类号： H01J37/32091 , H01J37/321 , H01J37/3244
摘要： The invention is embodied in a plasma reactor having a vacuum chamber with a cylindrical side portion and a ceiling at a certain height above the top of the cylindrical side portion, a wafer-holding pedestal near the bottom of the vacuum chamber, gas injection ports near the cylindrical side portion and a vacuum pump, the reactor including a generally planar disk-shaped conductive ceiling electrode adjacent the ceiling, a helical coil antenna having a bottom winding near the top of the cylindrical side portion and a top winding generally corresponding to the second diameter near the planar disk-shaped conductive ceiling electrode, the helical coil antenna substantially spanning the height between the top of the cylindrical side portion and the ceiling, and a switch for individually connecting each one of the coil antenna, the ceiling electrode and the wafer pedestal to one of (a) a respective RF power source or (b) ground or (c) a floating potential (i.e., unconnected to any potential source). The invention is also embodied in a plasma reactor having a vacuum chamber, a wafer-holding pedestal near the bottom of the vacuum chamber, gas injection ports and a vacuum pump, the reactor including a conductive ceiling electrode at the top of the chamber, a coil antenna having a top generally coplanar with the ceiling electrode and a base generally coinciding with a circumference of the vacuum chamber, and a switch for individually connecting each one of the coil antenna, the ceiling electrode and the wafer pedestal to one of (a) a respective RF power source, or (b) ground or (c) a floating potential. In one embodiment, the reactor is a chemical vapor depostion plasma reactor.
摘要翻译：本发明体现在具有真空室的等离子体反应器中，该真空室具有圆柱形侧部和位于圆柱形侧部顶部上方一定高度的顶部，靠近真空室底部的晶片保持基座，靠近气体注入口的气体注入口圆柱形侧部和真空泵，反应器包括与天花板相邻的大致平面的盘状导电顶板电极，具有靠近圆柱形侧部顶部的底部绕组的螺旋线圈天线和通常对应于第二直径靠近平面盘状导电天花板电极，螺旋线圈天线基本跨越圆柱形侧部的顶部与天花板之间的高度，以及用于单独连接线圈天线，天花板电极和晶片中的每一个的开关（a）相应的RF电源或（b）接地或（c）浮动电位之一（即，未连接到任何电位资源）。本发明还体现在具有真空室，靠近真空室底部的晶片保持基座，气体注入端口和真空泵的等离子体反应器中，该反应器包括位于室顶部的导电天花板电极，线圈天线具有与天花板电极大致共面的顶部和大致与真空室的圆周重合的基座，以及用于将线圈天线，天花板电极和晶片基座中的每一个单独连接到（a）相应的RF电源，或（b）接地或（c）浮动电位。在一个实施方案中，反应器是化学气相沉积等离子体反应器。

65. 发明授权

US5772771A Deposition chamber for improved deposition thickness uniformity 失效
标题翻译：沉积室用于改善沉积厚度均匀性
公开(公告)号：US5772771A
公开(公告)日：1998-06-30
申请号：US571618
申请日：1995-12-13
申请人： Shijian Li , Fred C. Redeker , Tetsuya Ishikawa
发明人： Shijian Li , Fred C. Redeker , Tetsuya Ishikawa
IPC分类号： C23C16/44 , C23C16/455 , C23C16/50 , C23C16/507 , C23C16/509 , C23C16/517 , C23C16/52 , H01J37/32 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： C23C16/507 , C23C16/4405 , C23C16/455 , C23C16/5096 , C23C16/517 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a vacuum chamber (18) which houses a substrate support (14). A set of first nozzles (34) have orifices (38) opening into the vacuum chamber in a circumferential pattern spaced apart from and generally overlying the periphery (40) of the substrate support. One or more seconds nozzle (56, 56a), positioned centrally above the substrate support, inject process gases into the vacuum chamber to improve deposition thickness uniformity. Deposition thickness uniformity is also improved by ensuring that the process gases are supplied to the first nozzles at the same pressure. If needed, enhanced cleaning of the nozzles can be achieved by slowly drawing a cleaning gas from within the vacuum chamber in a reverse flow direction through the nozzles using a vacuum pump (84).
摘要翻译：改进的沉积室（2）包括限定容纳衬底支撑件（14）的真空室（18）的壳体（4）。一组第一喷嘴（34）具有以与基板支撑件的周边（40）间隔开并且通常覆盖基板支撑件的周边（40）的圆周图案而开口进入真空室的孔口（38）。位于基板支架上方中心的一个或多个秒喷嘴（56,56a）将工艺气体注入真空室以改善沉积厚度均匀性。通过确保将工艺气体以相同的压力供应到第一喷嘴，也提高了沉积厚度均匀性。如果需要，可以通过使用真空泵（84）通过喷嘴沿反向流动方向从真空室内缓慢地抽取清洁气体来实现喷嘴的增强清洁。

66. 发明授权

US5748434A Shield for an electrostatic chuck 失效
标题翻译：屏蔽静电卡盘
公开(公告)号：US5748434A
公开(公告)日：1998-05-05
申请号：US663886
申请日：1996-06-14
申请人： Kent Rossman , Brian Lue , Fred C. Redeker
发明人： Kent Rossman , Brian Lue , Fred C. Redeker
IPC分类号： B23Q3/15 , H01L21/683 , H02N13/00
CPC分类号： H02N13/00 , H01L21/6831 , H01L21/6833
摘要： A shield (5) for an electrostatic chuck (4) includes a first shield member (60) circumscribing the chuck and a second shield member (62) supported over the first shield member. The second shield member has an upper surface surrounding the wafer and exposed to deposition from gases within the process chamber. Splitting the shield into two members increases the ratio of exposed surface to thermal mass of the second shield member, which increases the temperature of the second shield member during processing, thereby decreasing the rate of deposition thereon. In addition, the clean rate or deposition removal rate of the shield is typically a function of its temperature (i.e., the hotter the shield becomes during processing, the faster it can be cleaned). Therefore, the clean rate of the second shield member will be increased, thereby enhancing the throughput of the process.
摘要翻译：用于静电卡盘（4）的屏蔽（5）包括围绕卡盘的第一屏蔽构件（60）和支撑在第一屏蔽构件上的第二屏蔽构件（62）。第二屏蔽构件具有围绕晶片的上表面并暴露于处理室内的气体沉积。将屏蔽分成两个部件增加了第二屏蔽部件的暴露表面与热质量的比例，这在加工期间增加了第二屏蔽部件的温度，从而降低了其上的沉积速率。此外，屏蔽的清洁速率或沉积去除速率通常是其温度的函数（即，加工期间屏蔽变得越热，其可以被清洁的速度越快）。因此，第二屏蔽部件的清洁率将增加，从而提高过程的吞吐量。

67. 发明授权

US08591662B2 Methods for cleaning a semiconductor substrate 失效
标题翻译：清洗半导体衬底的方法
公开(公告)号：US08591662B2
公开(公告)日：2013-11-26
申请号：US13661929
申请日：2012-10-26
申请人： Erik M. Freer , John deLarios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
发明人： Erik M. Freer , John deLarios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
IPC分类号： B08B7/00
CPC分类号： H01L21/67092 , B08B3/00 , B08B7/00 , B08B7/02 , C11D9/02 , C11D11/0047 , C11D17/0017 , C23G1/18 , G03F7/423 , H01L21/02052 , H01L21/02057 , H01L21/02096 , H01L21/31133 , H01L21/67028 , H01L21/6708 , H01L21/67086 , Y10T137/4891
摘要： A method for cleaning a substrate is provided. The method initiates with applying an activation solution to a surface of the substrate. The activation solution and the surface of the substrate are contacted with a surface of a solid cleaning surface. The activation solution is absorbed into a portion of the solid cleaning element and then the substrate or the solid cleaning surface is moved relative to each other to clean the surface of the substrate. A method for cleaning the surface of the substrate with a solid cleaning element that experiences plastic deformation is also provided. Corresponding cleaning apparatuses are also provided.
摘要翻译：提供一种清洗基板的方法。该方法通过将激活溶液施加到基底的表面来启动。活化溶液和基材的表面与固体清洁表面的表面接触。活化溶液被吸收到固体清洁元件的一部分中，然后基底或固体清洁表面相对于彼此移动以清洁基底的表面。还提供了一种用经历塑性变形的固体清洁元件来清洁基板的表面的方法。还提供了相应的清洁装置。

68. 发明授权

US08419917B2 Electroplating head and method for operating the same 有权
标题翻译：电镀头及其操作方法
公开(公告)号：US08419917B2
公开(公告)日：2013-04-16
申请号：US12482171
申请日：2009-06-10
申请人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker
发明人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker
IPC分类号： C25D5/20 , C25D5/02 , C25D5/00
CPC分类号： C25D5/026 , C25D5/02 , C25D5/06 , C25D17/14
摘要： An electroplating head is disposed above and proximate to an upper surface of a wafer. Cations are transferred from an anode to an electroplating solution within the electroplating head. The electroplating solution flows downward through a porous electrically resistive material at an exit of the electroplating head to be disposed on the upper surface of the wafer. An electric current is established between the anode and the upper surface of the wafer through the electroplating solution. The electric current is uniformly distributed by the porous electrically resistive material present between the anode and the upper surface of the wafer. The electric current causes the cations to be attracted to the upper surface of the wafer.
摘要翻译：电镀头设置在晶片的上表面上方并靠近晶片的上表面。阳离子从阳极转移到电镀头内的电镀溶液中。电镀溶液在电镀头的出口处向下流过多孔电阻材料以设置在晶片的上表面上。通过电镀溶液在晶片的阳极和上表面之间建立电流。通过存在于阳极和晶片上表面之间的多孔电阻材料均匀分布电流。电流导致阳离子被吸引到晶片的上表面。

69. 发明授权

US08137474B2 Cleaning compound and method and system for using the cleaning compound 失效
标题翻译：清洁剂及使用清洁剂的方法和系统
公开(公告)号：US08137474B2
公开(公告)日：2012-03-20
申请号：US12705445
申请日：2010-02-12
申请人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
发明人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
IPC分类号： C11D7/50
CPC分类号： H01L21/02052 , B08B7/02 , C11D3/2079 , C11D9/02 , C11D9/26 , C11D9/267 , C11D11/0047 , C11D17/0013 , C11D17/0017 , C23G1/18 , G03F7/425 , G03F7/426 , H05K3/26
摘要： A cleaning compound is provided. The cleaning compound includes about 0.1 weight percent to about 10 weight percent of a fatty acid dispersed in water. The cleaning compound includes an amount of a base sufficient to bring a pH of the fatty acid water solution to about a level where above about 50% of the dispersed fatty acid is ionized. A method for cleaning a substrate, a system for cleaning a substrate, and a cleaning solution prepared by a process are also provided.
摘要翻译：提供清洁化合物。清洁化合物包括分散在水中的约0.1重量％至约10重量％的脂肪酸。清洁化合物包括一定量的足以使脂肪酸水溶液的pH达到大约50％的分散脂肪酸被离子化的水平的碱。还提供了清洁基板的方法，用于清洁基板的系统以及通过工艺制备的清洁溶液。

70. 发明申请

US20100206340A1 Method for Removing Contamination from a Substrate and for Making a Cleaning Solution 有权
标题翻译：从基材去除污染物和清洁溶液的方法
公开(公告)号：US20100206340A1
公开(公告)日：2010-08-19
申请号：US12768349
申请日：2010-04-27
申请人： Erik M. Freer , John M. deLarios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
发明人： Erik M. Freer , John M. deLarios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
IPC分类号： B08B3/00
CPC分类号： H01L21/02052 , B08B7/02 , C11D9/00 , C11D9/02 , C11D9/267 , C11D11/0047 , C11D17/0013 , C11D17/0017 , C23G1/18 , G03F7/42 , H01L21/02057 , H01L21/02096
摘要： A method is provided for removing contamination from a substrate. The method includes applying a cleaning solution having a dispersed phase, a continuous phase and particles dispersed within the continuous phase to a surface of the substrate. The method includes forcing one of the particles dispersed within the continuous phase proximate to one of the surface contaminants. The forcing is sufficient to overcome any repulsive forces between the particles and the surface contaminants so that the one of the particles and the one of the surface contaminants are engaged. The method also includes removing the engaged particle and surface contaminant from the surface of the substrate. A process to manufacture the cleaning material is also provided.
摘要翻译：提供了一种用于从衬底去除污染物的方法。该方法包括将具有分散相，连续相和分散在连续相内的颗粒的清洗溶液施加到基材的表面。该方法包括迫使分散在连续相内的颗粒中的一种接近一种表面污染物。强制足以克服颗粒和表面污染物之间的任何排斥力，使得颗粒中的一个和表面污染物之一接合。该方法还包括从基材的表面除去接合的颗粒和表面污染物。还提供了制造清洁材料的方法。

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