专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明申请

US20060231124A1 Substrate processing method 审中-公开
标题翻译：基板加工方法
公开(公告)号：US20060231124A1
公开(公告)日：2006-10-19
申请号：US11433616
申请日：2006-05-15
申请人： Hiroshi Watanabe , Tamotsu Mezaki , Shigeru Kido , Kiyofumi Sakaguchi
发明人： Hiroshi Watanabe , Tamotsu Mezaki , Shigeru Kido , Kiyofumi Sakaguchi
IPC分类号： B08B3/00
CPC分类号： H01L21/67086 , B08B3/10 , H05K3/26
摘要： Provided is a processing method capable of reliably processing the inside of a depression such as a trench, a contact hole, a deep pattern, or a pore of a porous substrate. A chemical solution M is supplied into a processing bath 1 placing a substrate W, and the processing bath 1 is repetitively evacuated and pressurized several times at a pressure lower than the atmospheric pressure. Alcohol X is brought into contact with the surface of the substrate W and supplied into a depression W−1. The chemical solution M is supplied into the processing bath 1 containing the substrate W until the chemical solution M reaches a water level at which the substrate W is dipped, thereby allowing the chemical solution M to enter the depression W−1. The chemical solution M is discharged from the processing bath 1, and a portion of the chemical solution M entering the depression W−1 and mixed with the alcohol X is evaporated by evacuating the processing bath 1. This process is repeated several times.
摘要翻译：提供了能够可靠地处理诸如沟槽，接触孔，深图案或多孔基材的孔的凹陷的内部的处理方法。将化学溶液M供给到放置基板W的处理槽1中，并且处理槽1在低于大气压的压力下重复抽真空并加压数次。使酒精X与基板W的表面接触并供给到凹部W-1中。将化学溶液M供给到含有基板W的处理槽1中，直到化学溶液M达到浸渍基板W的水位，从而使化学溶液M进入凹部W-1。从处理槽1排出化学溶液M，通过抽出处理槽1蒸发进入凹部W-1并与醇X混合的部分化学溶液M. 这个过程重复几次。

62. 发明授权

US07121472B2 Semiconductor integrated circuit, semiconductor integrated circuit module and information apparatus 有权
标题翻译：半导体集成电路，半导体集成电路模块和信息设备
公开(公告)号：US07121472B2
公开(公告)日：2006-10-17
申请号：US10720064
申请日：2003-11-25
申请人： Hideo Shimizu , Kenji Kojima , Tatsuyuki Matsushita , Yuuki Tomoeda , Kentaro Umesawa , Hideyuki Miyake , Hiroshi Watanabe
发明人： Hideo Shimizu , Kenji Kojima , Tatsuyuki Matsushita , Yuuki Tomoeda , Kentaro Umesawa , Hideyuki Miyake , Hiroshi Watanabe
IPC分类号： G06K19/06
CPC分类号： G07F7/1008 , G06K19/0723 , G06Q20/341 , G07F7/082
摘要： A semiconductor integrated circuit driven by an external power, comprises a change unit whose state changes with lapse of time without the external power, an output unit configured to output a signal in response to an instruction issued when the external power is supplied, the signal indicating a change of the state of the change unit, and an execution unit configured to execute a process in response to the signal. Therefore, the circuit is capable of utilizing time-point/time-period information even if they are not supplied with power.
摘要翻译：由外部电源驱动的半导体集成电路包括其状态随时间而不经外部电力而改变的改变单元，被配置为响应于在外部电源被提供时发出的指令而输出信号的输出单元，所述信号指示更改单元的状态的改变，以及被配置为执行响应于该信号的处理的执行单元。因此，即使电源没有供电，该电路也能够利用时间/时间段信息。

63. 发明授权

US07116691B2 Edge-emitting type semiconductor laser 有权
标题翻译：边缘发射型半导体激光器
公开(公告)号：US07116691B2
公开(公告)日：2006-10-03
申请号：US10766035
申请日：2004-01-29
申请人： Masanobu Ando , Hiroshi Watanabe
发明人： Masanobu Ando , Hiroshi Watanabe
IPC分类号： H01S5/20
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/34 , H01S2301/18
摘要： The interval Λ between each stripe of interference fringe generated in a conventional n-type contact layer is determined by a function (f(λ)=λ(n2−neq2)−1/2/2) wherein λ, n, and neq represent luminous wavelength λ of lights radiated from a light emitting part 104, refractive index n of the n-type contact layer, and equivalent refractive index neq of the n-type contact layer in guided wave mode, respectively. The remaining thickness δ of the n-type contact layer 102 at the concave part D which is formed at the back surface of the crystal growth substrate may be about Λ/2. When at least one portion of the n-type contact layer which is formed right beneath the laser cavity remains with about δ in thickness, the n-type contact layer arranged even right beneath the laser cavity can maintain excellent contact to a negative electrode. As a result, effective light confinement enables to adequately suppress ripples in FFP owing to lights leaked into the n-type contact layer, to thereby provide a semiconductor laser which oscillates stable lights.
摘要翻译：在常规n型接触层中产生的每条条纹干涉条纹之间的间隔Lλ由函数（f（λ）=λ（n≥0） 2/2）其中λ，n和n eq表示从发光部分辐射的光的发光波长λ 104，导向波模式中n型接触层的n型接触层的折射率n和等效折射率n eq eq 。形成在晶体生长衬底的背面的凹部D处的n型接触层102的剩余厚度δ可以为约λ/ 2。当在激光腔正下方形成的n型接触层的至少一部分保持厚度约为三角形时，即使在激光腔正下方布置的n型接触层可以保持与负电极的良好接触。结果，有效的光限制能够充分地抑制由于光泄漏到n型接触层中的FFP中的波纹，从而提供振荡稳定的光的半导体激光器。

64. 发明申请

US20060214217A1 Nonvolatile semiconductor storage device and manufacturing method therefor 失效
公开(公告)号：US20060214217A1
公开(公告)日：2006-09-28
申请号：US11224049
申请日：2005-09-13
申请人： Hiroshi Watanabe , Atsuhiro Kinoshita , Akira Takashima , Daisuke Hagishima
发明人： Hiroshi Watanabe , Atsuhiro Kinoshita , Akira Takashima , Daisuke Hagishima
IPC分类号： H01L29/788
CPC分类号： H01L29/7881 , H01L27/115 , H01L27/11521 , H01L29/42324
摘要： A nonvolatile semiconductor storage device includes a semiconductor substrate; a plurality of isolation regions formed in the semiconductor substrate; an element-forming region formed between adjacent isolation regions; a first gate insulating film provided on the element-forming region; a floating gate electrode which is provided on the first gate insulating film and in which a width of a lower hem facing the element-forming region is narrower than a width of the element-forming region in a section taken in a direction perpendicular to a direction in which the isolation regions extend; a second gate insulating film provided on the floating gate electrode; and a control gate electrode provided on the second gate insulating film.

65. 发明申请

US20060196933A1 IC-card service period setting method, IC card, IC card case and battery charger 有权
标题翻译： IC卡服务期设置方法，IC卡，IC卡盒和电池充电器
公开(公告)号：US20060196933A1
公开(公告)日：2006-09-07
申请号：US11411826
申请日：2006-04-27
申请人： Yuuki Tomoeda , Hiroshi Watanabe , Hideo Shimizu , Kenji Kojima , Tatsuyuki Matsushita , Kentaro Umesawa , Hideyuki Miyake
发明人： Yuuki Tomoeda , Hiroshi Watanabe , Hideo Shimizu , Kenji Kojima , Tatsuyuki Matsushita , Kentaro Umesawa , Hideyuki Miyake
IPC分类号： G06K7/00 , G06K5/00
CPC分类号： G06F21/32 , G06F21/31 , G06F21/73 , G06F21/77 , G06F2221/2137 , G06F2221/2143 , G06F2221/2153 , G06K7/006 , G06K13/085 , G06K19/073 , G06K19/07345 , G06Q20/341 , G07F7/082 , G07F7/1008 , H01L29/7883
摘要： A method of setting validity period of IC card, includes preparing IC card including change unit whose state changes with lapse of time starting from initial state without external power, measuring unit configured to measure state of change unit so as to generate information indicating whether or not validity period has elapsed, and operation unit configured to be operable if information indicates that validity period fails to have yet elapsed, and to be inoperable if information indicates that validity period has elapsed, preparing IC card case capable to house IC card by user, IC card case including identification unit configured to determine whether or not user is legitimate, performing user identification utilizing identification unit, when IC card is housed in IC card case, and transmitting signal to change unit in IC card depending on result of user identification, signal initializing change unit to initial state.
摘要翻译：一种设置IC卡的有效期的方法，包括准备IC卡，包括其状态随着经过时间而从外部电源的初始状态改变的改变单元，被配置为测量改变单元的状态的测量单元，以产生指示是否进行改变的信息有效期已经过去，并且操作单元被配置为在信息表示有效期不能够经过的情况下可操作，并且如果信息表示有效期已经过去，则不可操作，准备用户可容纳IC卡的IC卡盒卡盒，包括识别单元，其被配置为确定用户是否合法，使用识别单元执行用户识别，当IC卡容纳在IC卡盒中时，根据用户识别结果向IC卡中的改变单元发送信号，信号初始化将单位更改为初始状态。

66. 发明申请

US20060192020A1 IC-card service period setting method, IC card, IC card case and battery charger 审中-公开
公开(公告)号：US20060192020A1
公开(公告)日：2006-08-31
申请号：US11411899
申请日：2006-04-27
申请人： Yuuki Tomoeda , Hiroshi Watanabe , Hideo Shimizu , Kenji Kojima , Tatsuyuki Matsushita , Kentaro Umesawa , Hideyuki Miyake
发明人： Yuuki Tomoeda , Hiroshi Watanabe , Hideo Shimizu , Kenji Kojima , Tatsuyuki Matsushita , Kentaro Umesawa , Hideyuki Miyake
IPC分类号： G06K19/06
CPC分类号： G06F21/32 , G06F21/31 , G06F21/73 , G06F21/77 , G06F2221/2137 , G06F2221/2143 , G06F2221/2153 , G06K7/006 , G06K13/085 , G06K19/073 , G06K19/07345 , G06Q20/341 , G07F7/082 , G07F7/1008 , H01L29/7883
摘要： A method of setting validity period of IC card, includes preparing IC card including change unit whose state changes with lapse of time starting from initial state without external power, measuring unit configured to measure state of change unit so as to generate information indicating whether or not validity period has elapsed, and operation unit configured to be operable if information indicates that validity period fails to have yet elapsed, and to be inoperable if information indicates that validity period has elapsed, preparing IC card case capable to house IC card by user, IC card case including identification unit configured to determine whether or not user is legitimate, performing user identification utilizing identification unit, when IC card is housed in IC card case, and transmitting signal to change unit in IC card depending on result of user identification, signal initializing change unit to initial state.

67. 发明申请

US20060076320A1 Non-consumable electrode welding torch and welding head with the torch 有权
标题翻译：不消耗电极焊炬和焊炬用焊炬
公开(公告)号：US20060076320A1
公开(公告)日：2006-04-13
申请号：US11225177
申请日：2005-09-14
申请人： Hiroshi Watanabe , Takashi Sato , Toshiharu Myoga , Koichi Mitsuhata , Masahiro Kanatani , Keiji Ueda , Seiji Kikuhara , Toshiharu Nagashima , Shigeru Fujimoto , Ryuichi Etoh
发明人： Hiroshi Watanabe , Takashi Sato , Toshiharu Myoga , Koichi Mitsuhata , Masahiro Kanatani , Keiji Ueda , Seiji Kikuhara , Toshiharu Nagashima , Shigeru Fujimoto , Ryuichi Etoh
IPC分类号： B23K9/167
CPC分类号： B23K9/296 , B23K9/0213 , B23K2101/06
摘要： An ultra-flat non-consumable electrode welding torch which allows performing a welding operation through a narrow gap between adjacent piping such as welding piping of a boiler panel, to be mounted on a compact automatic welding head, and a welding head provided with such a welding torch are to be provided. As a gas supply mechanism that supplies a shield gas to a welding section formed at the tip of the non-consumable electrode through inside of the torch body for the non-consumable electrode welding, a gas supply path is provided for supplying the shield gas from an outer gas space in a double ring shaped gas space provided around a non-consumable electrode and divided by a partition wall, to an inner gas space through a plurality of orifices provided at regular intervals in the partition wall, and the gas is blown from the inner gas space to the region around the non-consumable electrode through a metal mesh plate. A gas outlet opening provided in the inner gas space is oriented in a different direction from the gas blowing direction through the orifice.
摘要翻译：一种超扁平的非消耗性电极焊枪，其能够通过相邻配管（例如锅炉面板的焊接管道）之间的狭窄间隙进行焊接操作，以安装在紧凑型自动焊接头上，以及具有这样的焊接头将提供焊炬。作为通过用于非消耗性电极焊接的炬体内部的形成在不可消耗电极的前端的焊接部供给保护气体的气体供给机构，设置有用于将保护气体从通过在分隔壁上以规则间隔设置的多个孔，将设置在非消耗性电极周围并被分隔壁分隔的双环形气体空间中的外部气体空间通过多个孔设置到内部气体空间，内部气体空间通过金属网板到达非消耗性电极周围的区域。设置在内部气体空间中的气体出口开口沿着通过孔口的气体吹送方向的不同方向定向。

68. 发明授权

US07025247B2 Wire bonding method 失效
标题翻译：接线方式
公开(公告)号：US07025247B2
公开(公告)日：2006-04-11
申请号：US10781188
申请日：2004-02-17
申请人： Tatsunari Mii , Hiroshi Watanabe
发明人： Tatsunari Mii , Hiroshi Watanabe
IPC分类号： B23K31/02
CPC分类号： H01L24/85 , B23K20/004 , H01L24/48 , H01L24/78 , H01L2224/0401 , H01L2224/05599 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/48471 , H01L2224/48479 , H01L2224/4848 , H01L2224/78301 , H01L2224/85045 , H01L2224/85051 , H01L2224/85181 , H01L2224/85186 , H01L2224/85399 , H01L2224/85986 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/15787 , H01L2224/45099 , H01L2924/00 , H01L2224/4554
摘要： A wire bonding method including the steps of forming a bump by performing ball bonding of a ball by wire on a second conductor, raising a capillary to a height that is equal to or lower than the height of a ball portion that rises into a through-hole of the capillary during formation of the bump, moving the capillary in a direction that is opposite from the first conductor, lowering the capillary so as to form an inclined wedge on the bump, cutting the wire, performing the primary bonding on the first conductor, and making a loop with the wire with respect to the bump from the first conductor, thus performing the secondary bonding on the inclined wedge on the bump.
摘要翻译：一种引线接合方法，包括以下步骤：通过在第二导体上进行球的球接合来形成凸块，将毛细管升高到等于或低于上升到贯通孔的球部的高度的高度，在形成凸块期间毛细管的孔，沿着与第一导体相反的方向移动毛细管，降低毛细管，以在凸起上形成倾斜的楔形物，切割线，在第一导体上执行主键合并且相对于来自第一导体的凸块与导线进行回路，从而在凸起上的倾斜楔块上进行二次接合。

69. 发明申请

US20060047630A1 Construction device information processing system and construction device information processing method 有权
标题翻译：施工装置信息处理系统和施工装置信息处理方法
公开(公告)号：US20060047630A1
公开(公告)日：2006-03-02
申请号：US10502606
申请日：2003-11-26
申请人： Yoshinori Furuno , Fujio Matsuda , Shinji Akino , Yoshinori Ohwada , Takanobu Ikari , Hiroshi Watanabe , Yoshinori Eguchi , Hiroyuki Adachi
发明人： Yoshinori Furuno , Fujio Matsuda , Shinji Akino , Yoshinori Ohwada , Takanobu Ikari , Hiroshi Watanabe , Yoshinori Eguchi , Hiroyuki Adachi
IPC分类号： G06F17/30 , G06F7/00
CPC分类号： G06Q10/06 , G06Q10/0875
摘要： An intermediate server 6 or a main server 5 executes the steps of displaying a work site of a construction machine or a predetermined area regarding the work site on a subcontractor's personal computer 62, prompting an input for applying to an order for work of repair/replacement of parts belonging to a predetermined component section of the construction machine, extracting the predetermined qualification requirements, which have been stored in a database 6A beforehand, from the database based on received applying information, producing an examination sheet for determining whether a local subcontractor meets the extracted qualification requirements, transmitting the examination sheet produced in the producing step to the subcontractor's personal computer 62 via a communication network, and prompting an input in predetermined places of the examination sheet. An information processing system and an information processing method for construction machines are provided which can present satisfactory services to the customer side even when the work site is in, e.g., a remote frontier region.
摘要翻译：中间服务器6或主服务器5执行在分包商的个人计算机62上显示建筑机械的工作现场或关于工作现场的预定区域的步骤，提示输入用于修理/更换工作的订单的属于建筑机械的预定部件的部件，根据接收到的应用信息，从数据库中提取已经存储在数据库6A中的预定资格要求，生成用于确定本地分包商是否满足的检查表提取的资格要求，通过通信网络将生产步骤中生产的检验表传送给分包商的个人计算机62，并且在检查表的预定位置提示输入。提供了一种用于建筑机械的信息处理系统和信息处理方法，即使当工作地点在例如远程边界区域中时，也能够向客户端提供令人满意的服务。

70. 发明申请

US20050270846A1 Nonvolatile semiconductor memory 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US20050270846A1
公开(公告)日：2005-12-08
申请号：US11197552
申请日：2005-08-05
申请人： Hiroshi Watanabe , Hiroshi Nakamura , Kazuhiro Shimizu , Seiichi Aritome , Toshitake Yaegashi , Yuji Takeuchi , Kenichi Imamiya , Ken Takeuchi , Hideko Oodaira
发明人： Hiroshi Watanabe , Hiroshi Nakamura , Kazuhiro Shimizu , Seiichi Aritome , Toshitake Yaegashi , Yuji Takeuchi , Kenichi Imamiya , Ken Takeuchi , Hideko Oodaira
IPC分类号： G11C16/04 , H01L21/8247 , H01L27/105 , H01L27/115
CPC分类号： H01L27/11521 , G11C16/0483 , G11C16/10 , H01L27/105 , H01L27/115 , H01L27/11524 , H01L27/11526 , H01L27/11529
摘要： A select gate transistor has a select gate electrode composed of a first-level conductive layer and a second-level conductive layer. The first-level conductive layer has contact areas. The second-level conductive layer has its portions removed that are located above the contact areas. Two adjacent select gate electrodes that are adjacent to each other in the column direction are arranged such that the contact areas of one select gate electrode are not opposed to the contact areas of the other select gate electrode. One select gate electrode has its first- and second-level conductive layers removed in their portions that are opposed to the contact areas of the other select gate electrode.
摘要翻译：选择栅极晶体管具有由第一级导电层和第二级导电层构成的选择栅电极。第一级导电层具有接触区域。第二级导电层的部分被去除，位于接触区域上方。在列方向上彼此相邻的两个相邻的选择栅电极被布置成使得一个选择栅电极的接触区域不与另一个选择栅电极的接触区域相对。一个选择栅电极在其与另一个选择栅电极的接触区域相对的部分中移除其第一和第二级导电层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式