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61. 发明授权

US07889444B2 Lens optical system 有权
标题翻译：镜头光学系统
公开(公告)号：US07889444B2
公开(公告)日：2011-02-15
申请号：US12488788
申请日：2009-06-22
申请人： Young-woo Park
发明人： Young-woo Park
IPC分类号： G02B9/12 , G02B9/04
CPC分类号： G02B13/04 , G02B9/12 , G02B15/177
摘要： A wide-angle lens optical system, including, in a sequence from an object side, a first lens group having a positive or negative refractive power, a stop, and a second lens group having positive refractive power, wherein the first lens group comprises, in a sequence from the object side, a front group having negative refractive power and a rear group having positive refractive power, and the wide-angle lens optical system satisfies the following Inequalities: 1.0
摘要翻译：一种广角镜头光学系统，包括从物体侧开始的具有正或负屈光力的第一透镜组，具有正折射力的第二透镜组，其中第一透镜组包括：从物体侧开始，具有负折光力的前组和具有正折光力的后组，并且广角透镜光学系统满足以下不等式：1.0

62. 发明申请

US20100129373A1 VEGF-SPECIFIC HUMAN ANTIBODY 有权
标题翻译： VEGF特异性人抗体
公开(公告)号：US20100129373A1
公开(公告)日：2010-05-27
申请号：US12580959
申请日：2009-10-16
申请人： Young Woo Park , So-Young Choi , Eun-Jung Song , Jung Yu , Myung-Ho Sohn , Jae Won Jeon , Joon-Goo Jung , Myeoung Hee Jang , Sungsub Kim
发明人： Young Woo Park , So-Young Choi , Eun-Jung Song , Jung Yu , Myung-Ho Sohn , Jae Won Jeon , Joon-Goo Jung , Myeoung Hee Jang , Sungsub Kim
IPC分类号： A61K39/395 , C07K16/22 , C12P21/02 , A61P19/02 , A61P17/06 , A61P27/02 , A61P35/00
CPC分类号： C07K16/22 , C07K2317/21 , C07K2317/622 , C07K2317/76
摘要： The present invention relates to a vascular endothelial growth factor (VEGF)-specific human antibody, and more particularly to a human antibody including a complementarity determining region (CDR) and a framework region (FR) derived from a human antibody specifically bound to VEGF. The VEGF-specific human antibody of the present invention may be used in diagnosis of diseases caused by the VEGF-overexpression, classification of the diseases, visualization, treatment, and prognostic evaluation.
摘要翻译：本发明涉及血管内皮生长因子（VEGF）特异性人抗体，更具体地涉及包含衍生自特异性结合VEGF的人抗体的互补决定区（CDR）和框架区（FR）的人抗体。本发明的VEGF特异性人抗体可用于诊断由VEGF过表达，疾病分类，可视化，治疗和预后评估引起的疾病。

63. 发明申请

US20080013377A1 Non-volatile memory devices including dummy word lines and related structures and methods 有权
标题翻译：包括虚拟字线和相关结构和方法的非易失性存储器件
公开(公告)号：US20080013377A1
公开(公告)日：2008-01-17
申请号：US11729169
申请日：2007-03-28
申请人： Jong-Sun Sel , Jung-Dal Choi , Young-Woo Park , Jin-Taek Park
发明人： Jong-Sun Sel , Jung-Dal Choi , Young-Woo Park , Jin-Taek Park
IPC分类号： G11C16/04
CPC分类号： G11C16/0483 , G11C16/3427
摘要： A non-volatile memory device may include a semiconductor substrate including an active region at a surface thereof, a first memory cell string on the active region, and a second memory cell string on the active region. The first memory cell string may include a first plurality of word lines crossing the active region between a first ground select line and a first string select line, and about a same first spacing may be provided between adjacent ones of the first plurality of word lines. The second memory cell string may include a second plurality of word lines crossing the active region between a second ground select line and a second string select line, and about the same first spacing may be provided between adjacent ones of the second plurality of word lines. Moreover, the first ground select line may be between the second ground select line and the first plurality of word lines, and the second ground select line may be between the first ground select line and the second plurality of word lines. Moreover, portions of the active region between the first and second ground select lines may be free of word lines, and a second spacing between the first and second ground select lines may be at least about 3 times greater than the first spacing. Related methods are also discussed.
摘要翻译：非易失性存储器件可以包括半导体衬底，其包括其表面处的有源区，有源区上的第一存储单元串和有源区上的第二存储单元串。第一存储单元串可以包括与第一地选择线和第一串选择线之间的有源区域交叉的第一多个字线，并且可以在第一多个字线中相邻的字线之间提供约相同的第一间隔。第二存储单元串可以包括与第二接地选择线和第二串选择线之间的有源区域交叉的第二多个字线，并且可以在相邻的第二多个字线之间提供约相同的第一间隔。此外，第一接地选择线可以在第二接地选择线和第一多个字线之间，并且第二接地选择线可以在第一接地选择线和第二多个字线之间。此外，第一和第二接地选择线之间的有源区域的部分可以没有字线，并且第一和第二接地选择线之间的第二间隔可以比第一间隔大至少约3倍。还讨论了相关方法。

64. 发明申请

US20070212880A1 SEMICONDUCTOR DEVICE WITH CHARGE STORAGE PATTERN AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：具有充电储存模式的半导体器件及其制造方法
公开(公告)号：US20070212880A1
公开(公告)日：2007-09-13
申请号：US11683383
申请日：2007-03-07
申请人： Young-Woo PARK , Jung-Dal CHOI , Jae-Sung SIM
发明人： Young-Woo PARK , Jung-Dal CHOI , Jae-Sung SIM
IPC分类号： H01L21/302
CPC分类号： H01L27/11568
摘要： A semiconductor device (e.g., a non-volatile memory device) with improved data retention characteristics includes active regions that protrude above a top surface of a device isolation region. A tunneling insulating layer is formed on the active regions. Charge storage patterns (e.g., charge trap patterns) are formed so as to be spaced apart from each other. A blocking insulating layer and a gate are formed on the charge storage patterns.
摘要翻译：具有改进的数据保留特性的半导体器件（例如，非易失性存储器件）包括突出在器件隔离区的顶表面上方的有源区。在有源区上形成隧道绝缘层。电荷存储模式（例如，电荷陷阱图案）被形成为彼此间隔开。在电荷存储图案上形成阻挡绝缘层和栅极。

65. 发明申请

US20050105192A1 Zoom lens 有权
标题翻译：变焦镜头
公开(公告)号：US20050105192A1
公开(公告)日：2005-05-19
申请号：US10989591
申请日：2004-11-16
申请人： Young-Woo Park
发明人： Young-Woo Park
IPC分类号： G02B15/16 , G02B15/177 , G02B15/14
CPC分类号： G02B15/177
摘要： The present invention is directed to a zoom lens which includes, in order from an object side: a first lens group having a negative refractive power; a second lens group having a positive refractive power; and a third lens group having a positive refractive power. While zooming from a wide-angle position to a telephoto position, the distance between the third lens group and an image side is greater at the wide-angle position than at the telephoto position. The zoom lens satisfies the following conditional expression: 1.0 ≤ L II f W ⁢ f T ≤ 1.5 where fW denotes the total focal length at the wide-angle position; fT denotes the total focal length at the telephoto position; and LII denotes the moving distance of the second lens group from the wide-angle position to the telephoto position.
摘要翻译：本发明涉及一种变焦透镜，其从物体侧依次包括具有负屈光力的第一透镜组; 具有正屈光力的第二透镜组; 以及具有正屈光力的第三透镜组。当从广角位置变焦到远摄位置时，第三透镜组和像侧之间的距离在广角位置比在远摄位置处更大。变焦镜头满足以下条件表达式： $1.0<=\sqrt{表示在宽范围内的总焦距，角度位置 f表示在远摄位置的总焦距; L II表示第二透镜组从广角位置到远摄位置的移动距离。}$

66. 发明授权

US06710934B2 Compact zoom lens system 有权
标题翻译：小型变焦镜头系统
公开(公告)号：US06710934B2
公开(公告)日：2004-03-23
申请号：US10244446
申请日：2002-09-17
申请人： Young-Woo Park
发明人： Young-Woo Park
IPC分类号： G02B1514
CPC分类号： G02B15/177
摘要： Disclosed is a zoom lens system. The zoom lens system comprises: a first lens group of a negative refractive power, the first lens group comprising at least one lens of a negative refractive power and at least one lens of a positive refractive power, a second lens group of a positive refractive power, the second lens group comprising a first lens of a positive refractive power, a second lens of a positive refractive power, and a third lens of a negative refractive power; and a third lens group of a positive refractive power, the third lens group comprising at least one lens of a positive refractive power; where the first, the second, and the third lens groups move along an optical axis, and the zoom lens system satisfies the following conditions: .4 ≤ t II f W ⁢ f T ≤ .6 and 2.8 ≤ f T f W ≤ 3.0 , where fw represents a total focal length at a wide-angle position; ft represents a total focal length at a telephoto position; and tII represents a total thickness of the second lens group.
摘要翻译：公开了一种变焦透镜系统。变焦透镜系统包括：负折射光焦度的第一透镜组，第一透镜组包括至少一个具有负折射光焦度的透镜和至少一个具有正折光力的透镜，第二透镜组具有正折光力所述第二透镜组包括正折光力的第一透镜，正折射光焦度的第二透镜和负折射光焦度的第三透镜; 和具有正屈光力的第三透镜组，所述第三透镜组包括至少一个具有正折光力的透镜; 其中第一透镜组和第三透镜组沿着光轴移动，并且变焦透镜系统满足以下条件：其中fw表示广角位置处的总焦距; ft表示长焦位置处的总焦距; 而tII表示第二透镜组的总厚度。

67. 发明授权

US06538126B1 Hepatitis C diagnostics and vaccines 失效
标题翻译：丙型肝炎诊断和疫苗
公开(公告)号：US06538126B1
公开(公告)日：2003-03-25
申请号：US08150204
申请日：1994-04-20
申请人： Joong Myung Cho , Yong Beom Lee , Young Woo Park , Kook Jin Lim , Deog Young Choi , Hong Seob So , Chun Hyung Kim , Sung Taek Kim , Jae Young Yang
发明人： Joong Myung Cho , Yong Beom Lee , Young Woo Park , Kook Jin Lim , Deog Young Choi , Hong Seob So , Chun Hyung Kim , Sung Taek Kim , Jae Young Yang
IPC分类号： C07H2104
CPC分类号： C07K14/005 , A61K39/00 , C07K16/109 , C12N2770/24222 , Y10S530/826
摘要： The present invention provides polynucleotides derived from cDNA of novel type of hepatitis C virus named Korean type hepatitis C virus (KHCV), polypeptides encoded therein, and antibodies directed against the polypeptides; and also provide diagnostics and vaccines employing any of the above materials as active ingredient(s).
摘要翻译：本发明提供衍生自名为韩国型丙型肝炎病毒（KHCV）的新型丙型肝炎病毒的cDNA的多核苷酸，其中编码的多肽和针对多肽的抗体; 并且还提供使用任何上述材料作为活性成分的诊断和疫苗。

68. 发明授权

US06525398B1 Semiconductor device capable of preventing moisture-absorption of fuse area thereof 有权
标题翻译：能够防止其保险丝区域的吸湿的半导体装置
公开(公告)号：US06525398B1
公开(公告)日：2003-02-25
申请号：US09650967
申请日：2000-08-29
申请人： Byung-yoon Kim , Won-seong Lee , Young-woo Park
发明人： Byung-yoon Kim , Won-seong Lee , Young-woo Park
IPC分类号： H01L2900
CPC分类号： H01L23/564 , H01L21/768 , H01L23/5258 , H01L23/585 , H01L27/10814 , H01L27/10894 , H01L27/11 , H01L2924/0002 , Y10S257/906 , Y10S257/907 , Y10S257/908 , H01L2924/00
摘要： A fuse area of a semiconductor device capable of preventing moisture-absorption and a method for manufacturing the fuse area are provided. When forming a guard ring for preventing permeation of moisture through the sidewall of an exposed fuse opening portion, an etch stop layer is formed over a fuse line. A guard ring opening portion is formed using the etch stop layer. The guard ring opening portion is filled with a material for forming the uppermost wiring of multi-level interconnect wirings or the material of a passivation layer, thereby forming the guard ring concurrently with the uppermost interconnect wiring or the passivation layer. Accordingly, permeation of moisture through an interlayer insulating layer or the interface between interlayer insulating layers around the fuse opening portion can be efficiently prevented by a simple process. In addition, the etch stop layer is also formed under the fuse opening portion so that an insulating layer remaining on the fuse line can be controlled to have a predetermined thickness when forming the fuse opening portion, thereby improving the cutting efficiency of fuses.
摘要翻译：提供了能够防止吸湿的半导体器件的保险丝区域和制造保险丝区域的方法。当形成用于防止湿气透过露出的保险丝开口部分的侧壁的保护环时，在熔丝线上形成蚀刻停止层。使用蚀刻停止层形成防护环开口部。保护环开口部分填充有用于形成多层互连布线的最上布线或钝化层的材料的材料，从而与最上面的布线或钝化层同时形成保护环。因此，可以通过简单的工艺有效地防止湿气渗透到层间绝缘层或熔断器开口部周围的层间绝缘层之间的界面。另外，在保险丝开口部分也形成有蚀刻停止层，使得在形成保险丝开口部分时，保留在熔丝线上的绝缘层可以被控制为具有预定的厚度，从而提高了保险丝的切割效率。

69. 发明授权

US6140242A Method of forming an isolation trench in a semiconductor device including annealing at an increased temperature 失效
标题翻译：在包括在升高的温度下退火的半导体器件中形成隔离沟槽的方法
公开(公告)号：US6140242A
公开(公告)日：2000-10-31
申请号：US203670
申请日：1998-12-01
申请人： Yong-chul Oh , Young-Woo Park
发明人： Yong-chul Oh , Young-Woo Park
IPC分类号： H01L21/76 , H01L21/762 , H01L21/8234 , H01L21/302
CPC分类号： H01L21/76232 , H01L21/823481
摘要： A method of forming an isolation trench in a semiconductor device results in increasing trench isolation characteristics by optimizing an annealing temperature thereby removing substrate defects caused during the etching of a semiconductor substrate and relieving stress thereby improving yield and reliability of devices. Appropriate adjustment of the rates of temperature change allow higher annealing temperatures to be employed without encountering attendant stresses due to differences in thermal expansion coefficients between the substrate and the trench material.
摘要翻译：在半导体器件中形成隔离沟槽的方法通过优化退火温度从而提高了沟槽隔离特性，从而消除了在半导体衬底的蚀刻期间引起的衬底缺陷并减轻了应力，从而提高了器件的成品率和可靠性。温度变化率的适当调整允许使用更高的退火温度，而不会由于衬底和沟槽材料之间的热膨胀系数的差异而遇到伴随的应力。

70. 发明授权

US5837595A Methods of forming field oxide isolation regions with reduced susceptibility to polysilicon residue defects 失效
标题翻译：形成具有降低的多晶硅残留缺陷易感性的场氧化物隔离区的方法
公开(公告)号：US5837595A
公开(公告)日：1998-11-17
申请号：US785999
申请日：1997-01-21
申请人： Dong-ho Ahn , Min-wook Hwang , Young-woo Park
发明人： Dong-ho Ahn , Min-wook Hwang , Young-woo Park
IPC分类号： H01L21/316 , H01L21/76 , H01L21/762
CPC分类号： H01L21/76205
摘要： Methods of forming field oxide isolation regions in a semiconductor substrate include the steps of exposing residual polysilicon defects contained within preliminary field oxide isolation regions and then performing a cleaning step to etch and reduce the size of the exposed defects (or eliminate the defects altogether). The preliminary field oxide isolation regions are then oxidized to preferably convert any remaining polysilicon defects into silicon dioxide and then a final oxide etching step is performed to define the shapes of the final field oxide isolation regions. Preferably, a pad oxide layer is formed on a face of a semiconductor substrate and then a masking layer is formed on the pad oxide layer, opposite the face of the substrate. The masking layer is then patterned to define an opening therein which exposes an upper surface of the pad oxide layer. An isotropic etching step is then performed on the pad oxide layer at the exposed upper surface thereof using the patterned masking layer as an etching mask. Polysilicon sidewall spacers are then formed in the opening at the sidewalls of the patterned masking layer. The portion of the substrate extending opposite the opening is then oxidized along with the polysilicon sidewall spacers to thereby define a preliminary field oxide isolation region which potentially contains residues of polycrystalline silicon therein which have not been fully oxidized. The preliminary field oxide isolation region is etched to expose the polysilicon residues. The exposed polysilicon residues are then etched in a cleaning solution to reduce their size and then an oxidation step is performed to convert any remaining portions of the polysilicon residues to silicon dioxide. Finally, the preliminary field oxide isolation region is etched to define a final field oxide isolation region on an electrically inactive portion of the substrate.
摘要翻译：在半导体衬底中形成场氧化物隔离区域的方法包括以下步骤：将包含在预备场氧化物隔离区域内的残留多晶硅缺陷曝光，然后执行清洁步骤以蚀刻并减小暴露缺陷的尺寸（或完全消除缺陷）。然后氧化初步场氧化物隔离区域以优选将任何剩余的多晶硅缺陷转化为二氧化硅，然后执行最终的氧化物蚀刻步骤以限定最后的场氧化物隔离区域的形状。优选地，在半导体衬底的表面上形成衬垫氧化物层，然后在衬底氧化物层上形成与衬底的表面相对的掩模层。然后对掩模层进行图案化以限定其中暴露氧化层的上表面的开口。然后使用图案化掩模层作为蚀刻掩模，在其暴露的上表面上的焊盘氧化物层上进行各向同性蚀刻步骤。然后在图案化掩模层的侧壁处的开口中形成多晶硅侧壁间隔物。然后与开口相对延伸的衬底的部分与多晶硅侧壁间隔物一起被氧化，从而限定潜在地包含尚未完全氧化的多晶硅残留物的预备场氧化物隔离区。蚀刻初步场氧化物隔离区以暴露多晶硅残渣。然后将暴露的多晶硅残余物在清洁溶液中蚀刻以减小其尺寸，然后执行氧化步骤以将多余残余物的任何剩余部分转化为二氧化硅。最后，蚀刻初步场氧化物隔离区以在衬底的电不活泼部分上限定最终的场氧化物隔离区。

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