专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5837595A Methods of forming field oxide isolation regions with reduced susceptibility to polysilicon residue defects 失效
标题翻译：形成具有降低的多晶硅残留缺陷易感性的场氧化物隔离区的方法
公开(公告)号：US5837595A
公开(公告)日：1998-11-17
申请号：US785999
申请日：1997-01-21
申请人： Dong-ho Ahn , Min-wook Hwang , Young-woo Park
发明人： Dong-ho Ahn , Min-wook Hwang , Young-woo Park
IPC分类号： H01L21/316 , H01L21/76 , H01L21/762
CPC分类号： H01L21/76205
摘要： Methods of forming field oxide isolation regions in a semiconductor substrate include the steps of exposing residual polysilicon defects contained within preliminary field oxide isolation regions and then performing a cleaning step to etch and reduce the size of the exposed defects (or eliminate the defects altogether). The preliminary field oxide isolation regions are then oxidized to preferably convert any remaining polysilicon defects into silicon dioxide and then a final oxide etching step is performed to define the shapes of the final field oxide isolation regions. Preferably, a pad oxide layer is formed on a face of a semiconductor substrate and then a masking layer is formed on the pad oxide layer, opposite the face of the substrate. The masking layer is then patterned to define an opening therein which exposes an upper surface of the pad oxide layer. An isotropic etching step is then performed on the pad oxide layer at the exposed upper surface thereof using the patterned masking layer as an etching mask. Polysilicon sidewall spacers are then formed in the opening at the sidewalls of the patterned masking layer. The portion of the substrate extending opposite the opening is then oxidized along with the polysilicon sidewall spacers to thereby define a preliminary field oxide isolation region which potentially contains residues of polycrystalline silicon therein which have not been fully oxidized. The preliminary field oxide isolation region is etched to expose the polysilicon residues. The exposed polysilicon residues are then etched in a cleaning solution to reduce their size and then an oxidation step is performed to convert any remaining portions of the polysilicon residues to silicon dioxide. Finally, the preliminary field oxide isolation region is etched to define a final field oxide isolation region on an electrically inactive portion of the substrate.
摘要翻译：在半导体衬底中形成场氧化物隔离区域的方法包括以下步骤：将包含在预备场氧化物隔离区域内的残留多晶硅缺陷曝光，然后执行清洁步骤以蚀刻并减小暴露缺陷的尺寸（或完全消除缺陷）。然后氧化初步场氧化物隔离区域以优选将任何剩余的多晶硅缺陷转化为二氧化硅，然后执行最终的氧化物蚀刻步骤以限定最后的场氧化物隔离区域的形状。优选地，在半导体衬底的表面上形成衬垫氧化物层，然后在衬底氧化物层上形成与衬底的表面相对的掩模层。然后对掩模层进行图案化以限定其中暴露氧化层的上表面的开口。然后使用图案化掩模层作为蚀刻掩模，在其暴露的上表面上的焊盘氧化物层上进行各向同性蚀刻步骤。然后在图案化掩模层的侧壁处的开口中形成多晶硅侧壁间隔物。然后与开口相对延伸的衬底的部分与多晶硅侧壁间隔物一起被氧化，从而限定潜在地包含尚未完全氧化的多晶硅残留物的预备场氧化物隔离区。蚀刻初步场氧化物隔离区以暴露多晶硅残渣。然后将暴露的多晶硅残余物在清洁溶液中蚀刻以减小其尺寸，然后执行氧化步骤以将多余残余物的任何剩余部分转化为二氧化硅。最后，蚀刻初步场氧化物隔离区以在衬底的电不活泼部分上限定最终的场氧化物隔离区。

IPRDB

热门服务

关于我们

友情链接

联系方式