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    • 55. 发明公开
    • 전원 공급 보호 장치
    • 供电保护装置
    • KR1020120007797A
    • 2012-01-25
    • KR1020100068502
    • 2010-07-15
    • 엘지이노텍 주식회사
    • 강경남
    • G09G3/36
    • G09G3/36G09G2330/045H03K17/08112
    • PURPOSE: A protection apparatus of supplying power having a sensing unit is provided to protect a drive IC, a switching device, and the fuse and circuit of a power input unit by controlling a Vcc voltage. CONSTITUTION: A driving integrated circuit receives noise from the outside and outputs a second noise signal to a low terminal. An input switching unit(130) controls an input signal through a first noise signal or a second noise signal. A sensing unit(120) is arranged between the driving integrated circuit and the input switching unit and senses a first noise signal. The sensing unit(140) is operated by the sensed signal or the second noise signal from a low terminal. An Vcc switching unit supplies Vcc voltage supplied to a driving integrated circuit through the controls signal of the sensing switching unit.
    • 目的:提供具有感测单元的电力供应保护装置,通过控制Vcc电压来保护驱动IC,开关装置以及电力输入单元的保险丝和电路。 构成:驱动集成电路从外部接收噪声,并向低端输出第二噪声信号。 输入切换单元(130)通过第一噪声信号或第二噪声信号来控制输入信号。 感测单元(120)布置在驱动集成电路和输入切换单元之间,并感测第一噪声信号。 感测单元(140)由来自低端的感测信号或第二噪声信号操作。 Vcc开关单元通过感测开关单元的控制信号提供提供给驱动集成电路的Vcc电压。
    • 57. 发明公开
    • Apparatus for removing leakage current of hall sensor type switch
    • 用于去除霍尔传感器类型开关漏电流的装置
    • KR20120073933A
    • 2012-07-05
    • KR20100135861
    • 2010-12-27
    • CONTINENTAL AUTOMOTIVE SYSTEMS
    • KIM JAY SONG
    • H03K19/18G01R33/07
    • H03K17/97G01R33/07H03K17/08112H03K17/9517
    • PURPOSE: An apparatus for removing a leakage current from a hall sensor type switch is provided to prevent malfunction in a microprocessor due to a leakage current of the microprocessor by receiving a current amount flowing in the hall sensor type switch. CONSTITUTION: A hall sensor type switch(110) operates according to power supplied from the outside. A current detection part(130) detects the supplied current. An A/D converter(150) changes an output signal from the current detection part, that is an analog signal, into a digital signal. A microprocessor(170) determines the output signal from the A/D converter and a leakage current from the hall sensor type switch based on a pre-stored critical value. The microprocessor generates a control signal for eliminating the leakage current. A leakage current removing part(190) removes the leakage current supplied to the hall sensor type switch according to the control signal of the microprocessor.
    • 目的:提供一种用于从霍尔传感器型开关中去除泄漏电流的装置,以通过接收在霍尔传感器型开关中流动的电流量而防止微处理器的漏电流引起的微处理器故障。 构成:霍尔传感器型开关(110)根据从外部提供的电力进行操作。 电流检测部(130)检测供给的电流。 A / D转换器(150)将来自电流检测部分的输出信号(即模拟信号)改变为数字信号。 微处理器(170)基于预先存储的临界值确定来自A / D转换器的输出信号和来自霍尔传感器类型开关的泄漏电流。 微处理器产生用于消除漏电流的控制信号。 泄漏电流消除部(190)根据微处理器的控制信号去除提供给霍尔传感器型开关的漏电流。
    • 59. 发明公开
    • 정전기 방전 보호회로 및 그 제조 방법
    • 用于钳位电静电放电的电路及其方法
    • KR1020090069452A
    • 2009-07-01
    • KR1020070137121
    • 2007-12-26
    • 주식회사 디비하이텍
    • 송종규
    • H01L23/60H01L27/04
    • H03K17/08112H01L23/60H01L27/0262H01L27/0928
    • A circuit for clamping electro static discharge and method therefore are provided to improve the reliability of the ESD(electrostatic discharge) device by improving a triggering property. The circuit for protecting discharge of static electricity comprises a conductive semiconductor substrate, a substrate resistance(204), and a ground(208) and a well(206). The substrate resistance is connected to an electrostatic discharge protection element on the substrate. The ground is connected through the substrate resistance and P+ junction. The well is formed in the lower part of the P+ junction. One end of the substrate resistance is connected to the gate of the electrostatic discharge protection element. The other end of the substrate resistance is connected to the ground through the P+ junction.
    • 因此,提供了用于钳位静电放电的电路及其方法,以通过提高触发特性来提高ESD(静电放电)器件的可靠性。 用于保护静电放电的电路包括导电半导体衬底,衬底电阻(204)和接地(208)和阱(206)。 衬底电阻连接到衬底上的静电放电保护元件。 地面通过基板电阻和P +结连接。 井在P +结的下部形成。 衬底电阻的一端连接到静电放电保护元件的栅极。 衬底电阻的另一端通过P +结连接到地面。
    • 60. 发明公开
    • 절연 게이트 양극성 트랜지스터의 게이트 드라이버 보호 장치
    • 绝缘闸门双极晶体管闸门驱动器保护装置
    • KR1020160025849A
    • 2016-03-09
    • KR1020140113255
    • 2014-08-28
    • 전자부품연구원
    • 조삼구이성철김규형이유황
    • H03K17/08H03K17/687
    • H03K17/08112H02M1/32
    • 본발명은 IGBT 게이트드라이버보호장치에관한것이다. 본발명은드레인에하이레벨공급전압이인가되고소오스가 IGBT의게이트에연결된제1 트랜지스터와, 드레인이상기제1 트랜지스터의소오스및 상기 IGBT의게이트에공통연결되고소오스에로우레벨공급전압이인가되는제2 트랜지스터와, 상기 IGBT의게이트에인가되는출력전압을피드백받아미리설정된하이레벨기준전압및 로우레벨기준전압과비교하는출력전압비교부및 상기출력전압비교부에의한비교결과, 상기출력전압이상기하이레벨기준전압보다작아지거나상기로우레벨기준전압보다커지는경우상기 IGBT로공급되는전류를차단하여상기 IGBT와상기제1 및제2 트랜지스터로의과전류유입을차단하는과전류차단스위치부를포함하여구성된다. 본발명에따르면, IGBT 게이트드라이버출력단의전압을상시감시하여, IGBT 게이트드라이버의부하임피던스가비정상적으로낮아지거나단락등이발생하여과전류가흐르는것을사전에차단하여소자의수명을연장하고 IGBT를이용하는전력시스템을안정적으로보호할수 있는효과가있다.
    • 本发明涉及一种IGBT栅极驱动器保护装置。 本发明被配置为包括:第一晶体管,其高电平电源电压施加到漏极,源极连接到IGBT的栅极; 漏极通常连接到第一晶体管的源极和IGBT的栅极和低电平电源电压的第二晶体管; 输出电压比较器,反馈施加到IGBT的栅极的输出电压,并将输出电压与预定的高电平电源电压和低电平电源电压进行比较; 以及过电流模块开关单元,其通过阻止当输出电压低于高电平参考电压或高于低电平参考电压时提供给IGBT的电流来阻止流入IGBT的过电流,第一和第二晶体管基于 输出电压比较器的比较结果。 根据本发明,具有能够安全地保护使用IGBT的电力系统的效果,通过正常地监视IGBT栅极驱动器的输出的电压并预先阻止作为流过的过电流来延长元件的寿命, IGBT栅极驱动器的负载阻抗异常或短路等发生。