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    • 56. 发明授权
    • Photoconductive films
    • 光导膜
    • US4040985A
    • 1977-08-09
    • US674086
    • 1976-04-06
    • Keiichi ShidaraNaohiro GotoEiichi MaruyamaTadaaki HiraiTsutomu Fujita
    • Keiichi ShidaraNaohiro GotoEiichi MaruyamaTadaaki HiraiTsutomu Fujita
    • H01J29/45H01L31/0248H01L31/00
    • H01J29/456Y10T428/31678
    • A photoconductive film comprises a first region containing Se in which Te and an element capable of forming deep levels in Se are added at concentrations lower than 10 atomic % inclusive on average, respectively, a second region disposed on the first region and containing Se in which Te is added with a continuous distribution of concentration having a peak value greater than 15 atomic % inclusive, a third region disposed on the second region and containing Se in which an element capable of forming deep levels in Se is added with a continuous distribution of concentration having a peak value greater than 15 atomic % inclusive, and a fourth region disposed on the third region and containing Se in which Te and an element capable of forming deep levels in Se are added at concentrations lower than 10 atomic % inclusive on average, respectively.
    • 光电导膜包括含有Se的第一区域,其中Te和能够形成Se的深度水平的元素分别平均加入低于10原子%的平均值,第二区域设置在第一区域上并包含Se,其中 加入具有峰值大于15原子%的浓度的连续分布的浓度,第三区域设置在第二区域上,并且包含Se,其中能够形成Se中的深层次的元素具有连续的浓度分布 具有大于15原子%的峰值的第一区域,以及设置在第三区域上并且含有Se的Se的第四区域,其中Te和Se中能够形成深度水平的元素分别以低于10原子% 。
    • 57. 发明授权
    • Target structure for use in photoconductive image pickup tubes
    • 用于光导图像拾取管的目标结构
    • US4007395A
    • 1977-02-08
    • US580473
    • 1975-05-23
    • Yasuhiko NonakaNaohiro GotoKeiichi Shidara
    • Yasuhiko NonakaNaohiro GotoKeiichi Shidara
    • H01J29/45H01L31/08H01J31/38
    • H01J29/456H01J9/233
    • In a method of manufacturing a target structure for use in a photoconductive image pickup tube when depositing a P-type photoconductive film on an N-type transparent conductive film deposited on one side of a transparent substrate which acts as an incident window of the image pickup tube, the P-type photoconductive film is made up of first and second photoconductive substances. The commencement of the deposition of the first photoconductive substance is delayed a predetermined time than that of the second photoconductive substance and the deposition of the first photoconductive substance is terminated before completion of the deposition of the second photoconductive material thereby forming a layer of the first photoconductive substance not contiguous to the junction between the N-type transparent conductive film and the P-type photoconductive film and having a predetermined thickness.
    • 在制造用于感光图像拾取管中的目标结构的方法中,当将P型光电导膜沉积在作为图像拾取器的入射窗口的透明基板的一侧上沉积的N型透明导电膜上时 P型光电导膜由第一和第二光电导物质组成。 第一光电导物质的沉积的开始被延迟比第二光电导物质的预定时间,并且在完成第二光电导材料的沉积之前终止第一光电导物质的沉积,从而形成第一光电导层 物质不与N型透明导电膜和P型光电导膜之间的接合点相邻并且具有预定厚度。