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51. 发明授权

US5435850A Gas injection system 失效
标题翻译：注气系统
公开(公告)号：US5435850A
公开(公告)日：1995-07-25
申请号：US123292
申请日：1993-09-17
申请人： Jorgen Rasmussen
发明人： Jorgen Rasmussen
IPC分类号： G03F7/20 , H01J37/30 , C23C16/00
CPC分类号： H01J37/3002 , G03F7/2041 , H01J37/3056 , H01J2237/006 , H01J2237/18 , H01J2237/31742
摘要： A gas injection system employs a crucible having a plurality of cylindrical bores within which gas is generated and a central passage leading to a dispensing nozzle. A chamber between the crucible bores and the central passage is sealed by a flexible membrane which is centrally clamped to a valve actuating rod that can be moved longitudinally via flexure of the membrane. A region behind the flexible membrane is sealed and vented to the system vacuum chamber whereby the enclosure within which the gas is generated is isolated.
摘要翻译：气体注入系统采用具有多个圆柱形孔的坩埚，其中产生气体和通向分配喷嘴的中心通道。坩埚孔和中心通道之间的腔室被柔性膜密封，柔性膜被中心夹紧到阀致动杆上，阀致动杆可以通过膜的弯曲而纵向移动。柔性膜后面的区域被密封并排放到系统真空室，由此隔离产生气体的外壳。

52. 发明申请

US20180151327A1 BEAM BLANKER AND METHOD FOR BLANKING A CHARGED PARTICLE BEAM 审中-公开
公开(公告)号：US20180151327A1
公开(公告)日：2018-05-31
申请号：US15824004
申请日：2017-11-28
申请人： Carl Zeiss SMT GmbH
发明人： Michael Budach , Christof Baur
IPC分类号： H01J37/04 , H01J37/28 , H01J37/285
CPC分类号： H01J37/045 , H01J37/28 , H01J37/285 , H01J2237/0432 , H01J2237/28 , H01J2237/31742
摘要： The present invention relates to a beam blanker for a scanning particle microscope for blanking a charged particle beam having a beam axis, along which charged particles propagate before entering the beam blanker, wherein the beam blanker comprises: (a) at least one stop having an aperture, through which the charged particle beam can pass; (b) at least one first and one second deflection element, which are each configured to deflect the particle beam from the beam axis in a first and a second direction, respectively, upon a voltage being present; and (c) a deflection controller configured to apply a first AC voltage having a first frequency to the first deflection element and a second AC voltage having a second frequency to the second deflection element, wherein the deflection controller sets a difference frequency between the first and second AC voltages such that pulses of the charged particle beam have a predefined pulse period and during the pulse period outside the pulse duration substantially no charged particles pass through the aperture of the stop.

53. 发明授权

US09206504B2 Low energy ion milling or deposition 有权
标题翻译：低能离子研磨或沉积
公开(公告)号：US09206504B2
公开(公告)日：2015-12-08
申请号：US14243583
申请日：2014-04-02
申请人： FEI Company
发明人： Johannes Jacobus Lambertus Mulders , Remco Theodorus Johannes Petrus Geurts , Petrus Hubertus Franciscus Trompenaars , Eric Gerardus Theodoor Bosch
IPC分类号： C23C14/28 , H05B6/00 , C23C14/48 , H01J37/305 , H01J37/317 , H01J37/02 , G01N1/28 , G01N1/32
CPC分类号： C23C14/48 , G01N1/286 , G01N1/32 , H01J37/02 , H01J37/3053 , H01J37/3171 , H01J37/3178 , H01J2237/004 , H01J2237/006 , H01J2237/31732 , H01J2237/3174 , H01J2237/31742 , H01J2237/31745 , H01J2237/31749
摘要： Samples to be imaged in a Transmission Electron Microscope must be thinned to form a lamella with a thickness of, for example, 20 nm. This is commonly done by sputtering with ions in a charged particle apparatus equipped with a Scanning Electron Microscope (SEM) column, a Focused Ion Beam (FIB) column, and one or more Gas Injection Systems (GISses). A problem that occurs is that a large part of the lamella becomes amorphous due to bombardment by ions, and that ions get implanted in the sample. The invention provides a solution by applying a voltage difference between the capillary of the GIS and the sample, and directing a beam of ions or electrons to the jet of gas. The beam ionizes gas that is accelerated to the sample, where (when using a low voltage between sample and GIS) low energy milling occurs, and thus little sample thickness becomes amorphous.
摘要翻译：在透射电子显微镜中成像的样品必须变薄以形成厚度为例如20nm的薄片。这通常通过在装备有扫描电子显微镜（SEM）柱，聚焦离子束（FIB）柱和一个或多个气体注入系统（GISs））的带电粒子装置中用离子溅射来完成。发生的一个问题是，由于离子的轰击，大部分薄片变成无定形，并且离子被植入样品中。本发明通过在GIS的毛细管和样品之间施加电压差并且将一束离子或电子引导到气体射流来提供解决方案。光束电离加速到样品的气体，其中（当在样品和GIS之间使用低电压时）发生低能量铣削，因此样品厚度变得非晶态。

54. 发明授权

US08460842B2 Defect repair apparatus and method for EUV mask using a hydrogen ion beam 有权
标题翻译：使用氢离子束的EUV掩模的缺陷修复装置和方法
公开(公告)号：US08460842B2
公开(公告)日：2013-06-11
申请号：US12931412
申请日：2011-01-28
申请人： Takashi Ogawa , Hiroshi Oba , Fumio Aramaki , Anto Yasaka
发明人： Takashi Ogawa , Hiroshi Oba , Fumio Aramaki , Anto Yasaka
IPC分类号： G03F1/74 , G21G5/00
CPC分类号： G21K1/062 , B82Y10/00 , G03F1/24 , G03F1/74 , G03F1/86 , H01J2237/31742
摘要： A defect repair apparatus for an EUV mask has an ion beam column that scans and irradiates the EUV mask with a focused hydrogen ion beam such that no region of the EUV mask receives an amount of beam irradiation exceeding 4×1016 ions/cm2. The ion beam column comprises a gas field ion source having an emitter with a pointed tip end that emits hydrogen ions that form the hydrogen ion beam, and an ion optical system that focuses and scans the hydrogen ion beam onto the EUV mask. A detector detects secondary charged particles generated from the EUV mask when irradiated with the hydrogen ion beam, and an image forming section forms and displays an observation image of the EUV mask on the basis of an output signal from the detector so that a defect in the EUV mask and the progress of the defect repair can be observed.
摘要翻译：用于EUV掩模的缺陷修复装置具有离子束柱，其利用聚焦的氢离子束扫描和照射EUV掩模，使得EUV掩模的区域不会接收超过4×1016个离子/ cm 2的光束照射量。离子束柱包括气体离子源，其具有发射体，其具有发射形成氢离子束的氢离子的尖端，以及将氢离子束聚焦并扫描到EUV掩模上的离子光学系统。当用氢离子束照射时，检测器检测从EUV掩模产生的二次带电粒子，并且图像形成部分基于来自检测器的输出信号形成并显示EUV掩模的观察图像，使得在可以观察到EUV面罩和缺陷修复的进展。

55. 发明授权

US08093567B2 Method and system for counting secondary particles 有权
标题翻译：次级颗粒计数方法和系统
公开(公告)号：US08093567B2
公开(公告)日：2012-01-10
申请号：US12374426
申请日：2007-07-23
申请人： Ken Guillaume Lagarec , Michael William Phaneuf
发明人： Ken Guillaume Lagarec , Michael William Phaneuf
IPC分类号： H01J37/147 , H01J37/00
CPC分类号： H01J37/3005 , H01J37/3056 , H01J2237/226 , H01J2237/24507 , H01J2237/24535 , H01J2237/2806 , H01J2237/30488 , H01J2237/31742 , H01J2237/31749
摘要： An apparatus for visualizing an ion beam editing operation of a sample. The apparatus comprises a charged particle beam column for producing an charged particle beam and for directing the charged particle beam onto the sample and beam rastering electronics (BRE) for controlling a movement and a dwell time of the charged particle beam. The apparatus further comprises a detector for detecting charged particles stemming from the sample as a result of the charged particle beam impinging on the sample and a multi-channel scalar (MCS) coupled to the detector and to the IBRE, and time-correlated with the BRE, the MCS for binning events detected at the detector as a function of time duration from a start event. Finally, the apparatus comprises an analysis module connected to the MCS for processing data from the MCS into a display signal, and a display module connected to the analysis module for displaying the display signal.
摘要翻译：一种可视化样品的离子束编辑操作的装置。该装置包括用于产生带电粒子束的带电粒子束柱，并用于将带电粒子束引导到用于控制带电粒子束的移动和停留时间的样品和射束扫描电子器件（BRE）上。该装置还包括一个检测器，用于检测由于带电粒子束入射在样本上的样品而产生的带电粒子以及耦合到检测器和IBRE的多通道标量（MCS），并与时间相关 BRE，作为起始事件的持续时间的函数的在检测器处检测到的合并事件的MCS。最后，该装置包括连接到MCS的用于处理来自MCS的数据到显示信号的分析模块，以及连接到分析模块的用于显示显示信号的显示模块。

56. 发明申请

US20080301615A1 Focused ion beam defining process enhancement 有权
标题翻译：聚焦离子束定义过程增强
公开(公告)号：US20080301615A1
公开(公告)日：2008-12-04
申请号：US11809055
申请日：2007-05-31
申请人： Hsin Wey Wang , Ling How Goh
发明人： Hsin Wey Wang , Ling How Goh
IPC分类号： G06F17/50
CPC分类号： H01J37/3056 , H01J37/3026 , H01J2237/31742 , H01J2237/31749
摘要： Embodiments employ a method to define points on selected nets in a netlist for a focused ion beam (FIB) to create open circuits. A selected net is partitioned into a set of sub-segments, and after considering all metal layers at and above that of the selected net, a subset of the set of sub-segments is formed as those sub-segments having minimum distances from the considered metal layers greater than some threshold. All contiguous sub-segments in the subset of the set of sub-segments are grouped into groups. The midpoints of such groups, and any isolated sub-segments, are possible candidate for FIB points. For some embodiments, the midpoint of the longest (or one of the longest) groups of sub-segments is chosen as the FIB point for the selected net. Other embodiments are described and claimed.
摘要翻译：实施例采用一种方法来定义聚焦离子束（FIB）的网表中所选网络上的点以创建开路。选择的网络被划分成一组子段，并且在考虑了所选网络之上和之上的所有金属层之后，该子区段集合的子集被形成为具有与考虑的最小距离的那些子段金属层大于某一阈值。子段集合子集中的所有连续子段被分组成组。这些群体的中点以及任何隔离的子细分是FIB点的候选者。对于一些实施例，选择子段的最长（或最长）组中的中点作为所选网的FIB点。描述和要求保护其他实施例。

57. 发明授权

US07060397B2 EPL mask processing method and device thereof 失效
标题翻译： EPL掩模处理方法及其装置
公开(公告)号：US07060397B2
公开(公告)日：2006-06-13
申请号：US10452541
申请日：2003-06-02
申请人： Yo Yamamoto , Kouji Iwasaki , Masamichi Oi
发明人： Yo Yamamoto , Kouji Iwasaki , Masamichi Oi
IPC分类号： G03F9/00 , G03C5/00
CPC分类号： G03F1/20 , G03F1/74 , G03F1/82 , H01J2237/31742 , Y10S430/143
摘要： A method of correcting a defective portion of an exposure window in a lithography mask, such as an EPL mask, includes a first step of irradiating a defective portion of the exposure window using a charge particle beam to perform correction processing, and a second step of irradiating another portion of the exposure window with the charged particle beam to eliminate attached matter therefrom, the attached matter consisting of particles ejected from the defective portion of the exposure window as a result of irradiation with the charged particle beam during the first step. The first step and the second step are sequentially repeated N times, wherein N is an integer of 2 or more, to thereby reduce the time needed for eliminating the attached matter.
摘要翻译：一种校正诸如EPL掩模的光刻掩模中的曝光窗口的缺陷部分的方法包括：第一步骤，使用电荷粒子束照射曝光窗口的缺陷部分以执行校正处理，第二步骤用带电粒子束照射曝光窗口的另一部分以从其中除去附着物，所述附着物质由在第一步骤期间被带电粒子束的照射而从曝光窗口的缺陷部分喷出的颗粒组成。第一步骤和第二步骤依次重复N次，其中N为2以上的整数，从而减少了除去附着物所需的时间。

58. 发明申请

US20030079187A1 Method and device for automatic optimal location of an operation on an integrated circuit 失效
标题翻译：用于在集成电路上自动优化操作的方法和装置
公开(公告)号：US20030079187A1
公开(公告)日：2003-04-24
申请号：US10257034
申请日：2002-10-08
发明人： Romain Desplats , Bruno Benteo
IPC分类号： G06F017/50
CPC分类号： G06F17/5068 , H01J2237/31742
摘要： The invention relates to a process and an installation for automatic optimal location of a servicing operation on an integrated circuit. The accessible polygons are retrieved on the basis of topographic descriptive data and data representing the electrical circuit. For each step, different execution options are determined, each corresponding to each of the different accessible polygons, and a rating is calculated and assigned to each execution option as a function of the depth of each possible initial polygon with respect to the access surface, and of accessibility parameters of each possible initial polygon, and the optimal execution option to be used for executing each step of the servicing operation is determined automatically by a numerical optimization calculation using the ratings assigned to the different execution options of each step of the servicing operation.
摘要翻译：本发明涉及用于在集成电路上自动最佳定位维修操作的过程和安装。可以根据地形描述数据和表示电路的数据检索可访问的多边形。对于每个步骤，确定不同的执行选项，每个执行选项对应于每个不同的可访问的多边形，并且根据相对于访问表面的每个可能的初始多边形的深度来计算评级并将其分配给每个执行选项，以及通过使用分配给维修操作的每个步骤的不同执行选项的额定值的数值优化计算，自动确定用于执行维修操作的每个步骤的用于执行每个可能的初始多边形的可访问性参数的最佳执行选项。

59. 发明申请

US20030031961A1 Dual-focused ion beams for semiconductor image scanning and mask repair 有权
标题翻译：用于半导体图像扫描和掩模修复的双重聚焦离子束
公开(公告)号：US20030031961A1
公开(公告)日：2003-02-13
申请号：US09927929
申请日：2001-08-10
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Chuan-Yuan Lin , Chang-Cheng Hung , Chih Cheng Chin , Chin Hsiang Lin
IPC分类号： H01J027/00 , G03F007/00
CPC分类号： G03F1/74 , H01J37/3005 , H01J37/3056 , H01J2237/31742
摘要： The use of dual-focused ion beams for semiconductor image scanning and mask repair is disclosed. A mask is imaged with either a focused negative ion beam, such as a focused oxygen ion beam, or a focused positive ion beam, such as a focused gallium ion beam. Mask imaging is also referred to as image scanning. Defects in the mask are repaired with the ion beam not used in imaging of the mask. Also disclosed is image scanning being performed with the focused negative ion beam to neutralize potential charge buildup, and mask repair being performed with the focused positive ion beam. An apparatus is disclosed that has a negative ion mechanism supplying negative ions, a positive ion mechanism supplying positive ions, a filter to select the desired ratio of the negative to the positive ions, and an aiming mechanism to focus the ions onto the mask.
摘要翻译：公开了使用双重聚焦离子束进行半导体图像扫描和掩模修复。用聚焦的负离子束（例如聚焦的氧离子束）或聚焦的正离子束（例如聚焦的镓离子束）对掩模进行成像。掩模成像也称为图像扫描。掩模中的缺陷用未在掩模成像中使用的离子束修复。还公开了用聚焦负离子束进行图像扫描，以中和潜在的电荷积聚，并且利用聚焦的正离子束进行掩模修复。公开了一种具有提供负离子的负离子机制，提供正离子的正离子机制，选择负离子与正离子的期望比例的滤光器以及将离子聚焦到掩模上的瞄准机构的装置。

60. 发明授权

US6028953A Mask defect repair system and method which controls a dose of a particle beam 失效
标题翻译：掩模缺陷修复系统和控制粒子束剂量的方法
公开(公告)号：US6028953A
公开(公告)日：2000-02-22
申请号：US90342
申请日：1998-06-04
申请人： Hiroko Nakamura , Kazuyoshi Sugihara , Haruki Komano
发明人： Hiroko Nakamura , Kazuyoshi Sugihara , Haruki Komano
IPC分类号： G03F1/32 , G03F1/72 , G06K9/00 , H01L21/027
CPC分类号： G03F1/26 , G03F1/74 , G03F1/32 , H01J2237/31742
摘要： A mask defect repair system which repairs, by irradiating a particle beam, a defect on a mask made of a transparent substrate and a mask material formed on the substrate, includes an imaging beam irradiation unit for two-dimensionally scanning and irradiating the beam for imaging on a surface of the mask, a detector for detecting a first intensity distribution of secondary particles emitted from the surface of the mask by irradiation of the beam for imaging, an image processing unit for performing image processing of at least part of the first intensity distribution of the secondary particles to prepare a second intensity distribution, an image display unit for displaying the first and second intensity distributions as an image, an external input unit for setting, on the image, a desired region to be processed with the beam, an irradiation region determination unit for determining, on the desired region to be processed, a beam irradiation region on the basis of the second intensity distribution, a repair beam irradiation unit for irradiating the beam for a defect repair on the beam irradiation region, and a gas supply unit for supplying an etching gas or a deposition gas to the surface of the mask.
摘要翻译：一种掩模缺陷修复系统，其通过照射粒子束，在由透明基板制成的掩模和形成在基板上的掩模材料上进行修补，包括：成像光束照射单元，用于二维扫描和照射成像用光束在掩模的表面上，具有检测器，用于通过照射用于成像的光束来检测从掩模的表面发射的二次粒子的第一强度分布;图像处理单元，用于执行至少部分第一强度分布的图像处理的第二强度分布，用于将第一和第二强度分布显示为图像的图像显示单元，用于在图像上设置要用光束处理的期望区域的外部输入单元，照射区域确定单元，用于基于第二强度dis来确定在待处理的所需区域上的束照射区域用于在束照射区域照射用于缺陷修复的光束的修复光束照射单元，以及用于将蚀刻气体或沉积气体供应到掩模的表面的气体供给单元。

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