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51. 发明授权

US06667542B2 Anisotropic conductive film-containing device 失效
标题翻译：各向异性导电膜装置
公开(公告)号：US06667542B2
公开(公告)日：2003-12-23
申请号：US09780254
申请日：2001-02-09
申请人： Miho Yamaguchi , Yuji Hotta
发明人： Miho Yamaguchi , Yuji Hotta
IPC分类号： H01L23495
CPC分类号： H01L24/83 , H01L24/29 , H01L24/81 , H01L2224/29101 , H01L2224/2919 , H01L2224/81801 , H01L2224/8319 , H01L2224/838 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01018 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/10329 , H01L2924/12042 , H01L2924/14 , H01L2924/00 , H01L2924/01031
摘要： A semiconductor device containing a circuit board, an anisotropic conductive film and a semiconductor element electrically connected to the circuit board via the anisotropic conductive film, wherein the anisotropic conductive film contains a film substrate made from an insulating resin and plural conductive paths insulated from each other, which paths are disposed in and through the film substrate in the thickness direction, and wherein a gap is formed between the surface on the circuit board side of the film substrate and the board surface of the circuit board. The connection part between the anisotropic conductive film and the circuit board, as well as the connection part between the anisotropic conductive film and the semiconductor element do not suffer from interface destruction even when the device is used in an environment associated with radical temperature changes. Thus, a semiconductor device having high connection reliability can be obtained.
摘要翻译：一种包含电路板，各向异性导电膜和通过各向异性导电膜电连接到电路板的半导体元件的半导体器件，其中各向异性导电膜包含由绝缘树脂制成的薄膜基板和彼此绝缘的多个导电路径在薄膜基板的厚度方向上配置有贯穿薄膜基板的路径，在薄膜基板的电路基板侧的表面与电路基板的基板面之间形成间隙。各向异性导电膜和电路板之间的连接部以及各向异性导电膜和半导体元件之间的连接部分即使在与自由基温度变化相关的环境中使用时也不会遭受界面破坏。因此，可以获得具有高连接可靠性的半导体器件。

52. 发明授权

US06652688B2 Process for producing semiconductor wafer with adhesive film 失效
标题翻译：用粘合膜制造半导体晶片的工艺
公开(公告)号：US06652688B2
公开(公告)日：2003-11-25
申请号：US10176530
申请日：2002-06-24
申请人： Akiko Matsumura , Yuji Hotta , Sadahito Misumi
发明人： Akiko Matsumura , Yuji Hotta , Sadahito Misumi
IPC分类号： B32B3120
CPC分类号： H01L21/563 , H01L24/29 , H01L2224/274 , H01L2224/45144 , H01L2224/73203 , H01L2224/83191 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01077 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/10329 , Y10T29/4921 , Y10T29/53178 , Y10T156/1052 , Y10T428/14 , Y10T428/28 , H01L2924/01031 , H01L2924/00
摘要： A process for producing a semiconductor wafer having an adhesive film, by adhering an adhesive film onto a bump-formed surface of a semiconductor wafer having formed thereon bumps with a predetermined arrangement, which comprises: determining a particular arrangement axis direction in which intervals between adjacent linear arrangement axes connecting the bumps becomes the shortest; and adhering the adhesive film in the direction substantially at a right angle with the determined arrangement axis direction, so as to markedly reduce voids included in the adhesion surface upon adhering an adhesive film such as underfill onto a semiconductor wafer.
摘要翻译：一种用于制造具有粘合剂膜的半导体晶片的方法，其通过将粘合剂膜粘附到具有在其上形成有凸起的半导体晶片的凸起形成的表面上，该半导体晶片具有预定布置，其包括：确定特定的布置轴方向，其中相邻连接凸块的线性排列轴线最短; 并且在确定的布置轴线方向上以大致直角的方向粘合粘合剂膜，以便在将诸如底部填充剂的粘合剂膜粘附到半导体晶片上时，显着地减小包括在粘合表面中的空隙。

53. 发明授权

US06597192B2 Test method of semiconductor device 失效
标题翻译：半导体器件的测试方法
公开(公告)号：US06597192B2
公开(公告)日：2003-07-22
申请号：US09494379
申请日：2000-01-31
申请人： Miho Yamaguchi , Yuji Hotta
发明人： Miho Yamaguchi , Yuji Hotta
IPC分类号： G01R3126
CPC分类号： G01R1/0408
摘要： A semiconductor device is tested for its function by sandwiching the inventive anisotropic conductive film 1 between a semiconductor device 2 and a circuit board 3, and applying a contact load F of 3-50 gf per one electrode of the device to achieve functionally testable conduction between the device 2 and the board 3. The anisotropic conductive film 1 has a structure wherein plural conductive paths having a total length of 60-500 &mgr;m protrude from the both surfaces of the film substrate made of an insulating resin, and shows an elastic modulus of 0.1-1.0 GPa at 25-150° C. The deformation of the anisotropic conductive film during a test is 5-30 &mgr;m.
摘要翻译：通过将本发明的各向异性导电膜1夹在半导体器件2和电路板3之间并且对每个器件的每个电极施加3-50gf的接触负载F来测试半导体器件的功能，以实现功能上可测试的导通装置2和基板3.各向异性导电膜1具有从绝缘树脂制成的薄膜基板的两面突出的总长度为60〜500μm的多个导电路径的结构，显示弹性模量在25-150℃下为0.1-1.0GPa。试验期间各向异性导电膜的变形为5-30μm。

54. 发明授权

US5846477A Production method for encapsulating a semiconductor device 失效
标题翻译：用于封装半导体器件的制造方法
公开(公告)号：US5846477A
公开(公告)日：1998-12-08
申请号：US568690
申请日：1995-12-07
申请人： Yuji Hotta , Hitomi Shigyo , Shinichi Ohizumi
发明人： Yuji Hotta , Hitomi Shigyo , Shinichi Ohizumi
IPC分类号： B29C33/18 , B29C33/68 , B29C45/14 , B29C45/02
CPC分类号： B29C45/14655 , B29C2045/14663 , B29C33/18 , B29C33/68 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247
摘要： A method of producing a semiconductor device by encapsulating a semiconductor element with a resin, which comprises disposing a semiconductor element with lead frames and an encapsulating resin in a state of being sandwiched between a pair of films on a molding mold having a port for setting the encapsulating resin, closing the mold, pressing the encapsulating resin between the films in a heated state by a plunger vertically moving in the pot, and injecting the molten encapsulating resin in the inside of the mold cavity from the pot portion through a runner portion to encapsulate the semiconductor element with the encapsulating resin.
摘要翻译：一种通过用树脂封装半导体元件来制造半导体器件的方法，该方法包括：将具有引线框架的半导体元件和封装树脂在夹在一对成型模具之间的状态下设置，所述成型模具具有用于设置封闭树脂，闭合模具，通过在锅中垂直移动的柱塞在加热状态下将封装树脂压在膜之间，并通过流道部分将熔融的封装树脂从罐部分从浇口部分注入封装物该半导体元件具有封装树脂。

55. 发明授权

US4409323A Silver halide photographic material 失效
标题翻译：卤化银照相材料
公开(公告)号：US4409323A
公开(公告)日：1983-10-11
申请号：US234442
申请日：1981-02-13
申请人： Ryosuke Sato , Yuji Hotta , Katsumi Matsuura
发明人： Ryosuke Sato , Yuji Hotta , Katsumi Matsuura
IPC分类号： G03C7/26 , C07D231/08 , C07D231/46 , C07D257/04 , C07D277/74 , C07D285/12 , C07D285/135 , C07D401/12 , C07D403/12 , G03C7/305 , G03C7/32 , G03C1/40
CPC分类号： C07D257/04 , C07D231/08 , C07D277/74 , C07D285/135 , G03C7/30576 , Y10S430/158 , Y10S430/159
摘要： A silver halide photographic material containing a coupler capable of releasing a photographically useful group in a controllable timing.
摘要翻译：一种卤化银照相材料，其含有能够在可控制的时间内释放摄影有用的基团的成色剂。

56. 发明申请

US20130088656A1 FREQUENCY CONTROL METHOD OF OPTICAL TUNABLE FILTER DEVICES 审中-公开
标题翻译：光电滤波器的频率控制方法
公开(公告)号：US20130088656A1
公开(公告)日：2013-04-11
申请号：US13584066
申请日：2012-08-13
申请人： Sachiko Michihata , Yuji Hotta
发明人： Sachiko Michihata , Yuji Hotta
IPC分类号： G02F1/1333 , G02F1/19 , G02B26/00 , G02F1/23
CPC分类号： G02B26/001
摘要： A method for controlling a characteristic of a variable optical filter including a frequency selecting element includes changing a driving voltage for a specific pixel of the frequency selecting element continuously to produce an amount of change in a frequency that is passed through that pixel, changing a driving voltage value for a specific pixel of the frequency selecting element continuously to produce an attenuation value for a beam that is passed through that pixel, calculating, from a relationship between the driving voltage and a frequency characteristic and between the driving voltage and amount of attenuation, a function that indicates an approximated curve of no less than a second order and no more than a sixth order for expressing a relationship between a transmissivity and a frequency, and controlling the characteristic through driving a controlled pixel of the frequency selecting element based on the function.
摘要翻译：用于控制包括频率选择元件的可变滤光器的特性的方法包括连续地改变频率选择元件的特定像素的驱动电压，以产生通过该像素的频率的变化量，改变驱动频率选择元件的特定像素的电压值连续地产生用于通过该像素的光束的衰减值，根据驱动电压和频率特性之间的关系以及驱动电压与衰减量之间的关系，指示用于表示透射率和频率之间的关系的不小于二阶且不大于六阶的近似曲线的函数，并且通过基于该函数来驱动频率选择元素的受控像素来控制特性。

57. 发明申请

US20110027890A1 MATERIAL FOR CELL CULTURE 审中-公开
标题翻译：细胞培养材料
公开(公告)号：US20110027890A1
公开(公告)日：2011-02-03
申请号：US12159214
申请日：2006-12-25
申请人： Akio Fujita , Yuji Hotta , Keiko Oka , Michiyo Takagi
发明人： Akio Fujita , Yuji Hotta , Keiko Oka , Michiyo Takagi
IPC分类号： C12N5/02 , C07K14/00 , C07H21/00
CPC分类号： C12N5/0068 , G01N33/54306
摘要： A ligand construct containing at least two, identical or different, ligand molecules which are capable of binding to a cell surface receptor, the ligand molecules being coupled via a spacer, wherein the ligand construct has at least one functional group for binding substrates. According to the ligand construct of the present invention, the immobilization of the ligand construct to various artificial substrates is facilitated, so that an artificial matrix can be easily prepared on an optimal substrate, whereby cells can be stably cultured.
摘要翻译：含有至少两个相同或不同的配体分子的配体构建体，其能够结合细胞表面受体，配体分子通过间隔基偶联，其中配体构建体具有至少一个用于结合底物的官能团。根据本发明的配体构建体，能够容易地将配体构建体固定化为各种人造底物，从而可以容易地在最佳底物上制备人造基质，由此能够稳定地培养细胞。

58. 发明申请

US20090281633A1 POROUS CERAMIC MATERIAL AND METHOD OF PRODUCING THE SAME 有权
标题翻译：多孔陶瓷材料及其制造方法
公开(公告)号：US20090281633A1
公开(公告)日：2009-11-12
申请号：US12306341
申请日：2007-06-22
申请人： Yuji Hotta , Yasushi Suetsugu , Masanori Kikuchi , Toshiyuki Ikoma , Tomoya Kuwayama , Takashi Makabe , Junzo Tanaka
发明人： Yuji Hotta , Yasushi Suetsugu , Masanori Kikuchi , Toshiyuki Ikoma , Tomoya Kuwayama , Takashi Makabe , Junzo Tanaka
IPC分类号： A61F2/02 , A61C13/08 , B29C39/02 , A61P43/00
CPC分类号： A61L27/56 , A61L27/10 , A61L2430/02 , C04B35/043 , C04B35/111 , C04B35/447 , C04B35/46 , C04B35/486 , C04B35/565 , C04B35/62655 , C04B38/0074 , C04B2111/00836 , C04B2235/3212 , C04B2235/5436 , C04B2235/5445 , C04B2235/77 , C04B2235/96 , C04B2235/9607 , Y10T428/249953 , Y10T428/249975 , C04B38/0003
摘要： Provision of a porous ceramic material which rapidly induces bone tissue formation and has practical strength.A porous ceramic material 11 having substantially unidirectionally oriented pores 12, a porosity of 40-90%, and an average open area of one pore of 0.05×10−3-50×10−3 mm2 both in a first sectional surface perpendicular to the pore 12 orientation direction and a second sectional surface parallel to the first sectional surface and 5 mm distant from the first sectional surface in the pore 12 Orientation direction. Using the material 11, when a cylindrical test piece (diameter 3 mm×height 5 mm, the pore 12 array direction as a height direction) made of the material is dipped in polyethylene glycol up to 1 mm from one end thereof, polyethylene glycol permeates through the whole test piece preferably within 30 seconds.
摘要翻译：提供一种快速诱导骨组织形成并具有实用强度的多孔陶瓷材料。在垂直于孔12取向的第一截面中，具有基本上单向取向的孔12，孔隙率为40-90％，孔的平均开放面积为0.05×10 -3〜50×10 -3 mm 2的多孔陶瓷材料11 方向和平行于第一截面的第二截面，并且在孔12的方位方向上离开第一截面的距离为5mm。使用材料11，当将由该材料制成的圆柱形试验片（直径3mm×高度5mm，作为高度方向的孔12排列方向）从其一端浸入到聚乙二醇中至多1mm时，聚乙二醇渗透通过整个试片优选在30秒内。

59. 发明授权

US07559681B2 Light pipe for direct-type backlight and direct-type backlight 失效
标题翻译：直管式背光灯和直接型背光灯管
公开(公告)号：US07559681B2
公开(公告)日：2009-07-14
申请号：US11263616
申请日：2005-11-01
申请人： Ichiro Suehiro , Noriaki Harada , Yuji Hotta
发明人： Ichiro Suehiro , Noriaki Harada , Yuji Hotta
IPC分类号： F21V7/04
CPC分类号： G02B6/0061 , G02B6/0018 , G02B6/0038
摘要： The present invention provides a light pipe for a direct-type backlight having an upper surface and a lower surface, which has: a light reflecting member provided on the upper surface; and plural light scattering members formed concentrically on at least one surface selected from the upper surface and the lower surface, wherein each of the plural light scattering members is a circular groove or a circular projection, wherein each area between respective light scattering members is substantially the same.
摘要翻译：本发明提供一种具有上表面和下表面的直接型背光源的光管，其具有：设置在上表面上的光反射部件; 以及在从上表面和下表面中选择的至少一个表面上同心地形成的多个光散射部件，其中，所述多个光散射部件中的每一个为圆形槽或圆形突起，其中各散射光体之间的各区域基本上为相同。

60. 发明授权

US07487586B2 Process for producing semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07487586B2
公开(公告)日：2009-02-10
申请号：US10737853
申请日：2003-12-18
申请人： Akiko Matsumura , Yuji Hotta
发明人： Akiko Matsumura , Yuji Hotta
IPC分类号： H05K3/30
CPC分类号： H01L23/49816 , H01L21/4853 , H01L2224/16 , H01L2924/00014 , H01L2924/01012 , H01L2924/01019 , H01L2924/01077 , H05K3/3452 , H05K3/3457 , H05K2201/10734 , H05K2201/10977 , H05K2203/1189 , Y10T29/49126 , Y10T29/4913 , Y10T29/49144 , Y10T29/49146 , H01L2224/0401
摘要： A process for semiconductor device production by which the reliability of connection with bumps can be easily heightened with higher certainty. The process for producing a semiconductor device comprising a substrate having bumps formed thereon, comprises covering the bumps with an adhesive film which has a modulus of elasticity (−55° C.) of from 100 MPa to 5 GPa and has a thickness corresponding to from 5 to 40% of the height of the bumps, and then disposing the adhesive film on the substrate so that the bumps pierce through the adhesive film and come to protrude therefrom.
摘要翻译：一种用于半导体器件生产的方法，通过该方法可以更高的确定性容易地提高与凸块的连接的可靠性。包括其上形成有凸起的基板的半导体器件的制造方法包括：使用具有100MPa至5GPa的弹性模量（-55℃）的粘合剂膜覆盖凸块，并且具有对应于凸起的高度的5〜40％，然后将粘合剂膜设置在基板上，使得突起穿过粘合膜并从其突出。

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