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    • 52. 发明授权
    • Nanotube spin valve and method of producing the same
    • 纳米管自旋阀及其制造方法
    • US07466523B1
    • 2008-12-16
    • US10617015
    • 2003-07-10
    • Yingjian Chen
    • Yingjian Chen
    • G11B5/39B05D3/00D01F9/12G11C11/02
    • G11B5/3906B82Y10/00B82Y25/00B82Y40/00G01R33/093G11B2005/3996G11C11/54G11C13/025H01F10/3254H01F41/307Y10S977/742
    • Present invention discloses novel designs of carbon nanotube spin valve structures for incorporation into magnetic storage and magnetic sensing devices, such as magnetic read head, MRAM, and magnetic field sensor. One of the designs is an in-stack carbon nanotube spin valve, which consists of a ferromagnetic free layer and a ferromagnetic pinned layer. The two layers are physically separated, although they reside in parallel planes. A single or plurality of vertically aligned carbon nanotubes are in between the two layers, and in electrical contact with both. The other design is a planar carbon nanotube spin valve, which consists of ferromagnetic free layer and pinned layer in substantially the same plane. They are electrically connected by in-plane aligned carbon nanotubes, which reside in between. The methods of fabricating the magnetic read head and MRAM devices utilizing these types of carbon nanotube spin valves are also described.
    • 本发明公开了用于结合到磁存储器中的碳纳米管自旋阀结构的新颖设计和诸如磁读头,MRAM和磁场传感器的磁感测装置。 其中一种设计是叠层碳纳米管自旋阀,其由铁磁性自由层和铁磁性钉扎层组成。 两层物理分离,尽管它们位于平行的平面上。 单个或多个垂直排列的碳纳米管位于两层之间,并与两者电接触。 另一种设计是平面碳纳米管自旋阀,其由基本相同的平面内的铁磁性自由层和钉扎层组成。 它们通过位于其间的面内对准的碳纳米管电连接。 还描述了使用这些类型的碳纳米管旋转阀制造磁读头和MRAM器件的方法。
    • 53. 发明授权
    • Inductive writer design using a soft magnetic pedestal having a high magnetic saturation layer
    • 使用具有高磁饱和层的软磁基座的感应写入器设计
    • US07375926B1
    • 2008-05-20
    • US11779785
    • 2007-07-18
    • Kroum S. StoevFrancis H. LiuYugang WangYingjian Chen
    • Kroum S. StoevFrancis H. LiuYugang WangYingjian Chen
    • G11B5/187
    • G11B5/1871G11B5/3116G11B5/3146G11B5/3967
    • A magnetic head for writing information on a relatively-moving medium includes a first substantially flat soft magnetic pole layer and a second substantially flat pole layer with at least one coil layer between them. The pole layers are magnetically coupled in a core region and spaced by more than one micron from one other. A soft magnetic pedestal adjoins the first pole layer adjacent to a medium-facing surface of the head, and a first high magnetic saturation layer adjoins the pedestal. A second high magnetic saturation layer adjoins the second pole layer. The first high magnetic saturation layer has a first throat height and the second high magnetic saturation layer extends from the medium-facing surface only to a second throat height. The first and second throat heights are within about one and one-half microns from the medium-facing surface and are essentially equal.
    • 用于在相对移动的介质上写入信息的磁头包括第一基本平坦的软磁极层和在它们之间具有至少一个线圈层的第二基本平坦的极性层。 磁极层磁芯耦合在磁芯区域并彼此间隔超过一微米。 软磁座与第一磁极层相邻,与磁头的介质表面相邻,第一高磁饱和层邻接基座。 第二高磁饱和层邻接第二极层。 第一高磁饱和层具有第一喉部高度,而第二高磁饱和层从介质中的表面延伸到第二喉部高度。 第一和第二喉部高度距离面向介质的表面大约一个半微米,并且基本相等。
    • 55. 发明授权
    • Insulation layer structure for inductive write heads and method of fabrication
    • 感应写头的绝缘层结构和制造方法
    • US06958885B1
    • 2005-10-25
    • US09745708
    • 2000-12-21
    • Yingjian ChenKyusik SinRonald Barr
    • Yingjian ChenKyusik SinRonald Barr
    • G11B5/127G11B5/147G11B5/31G11B5/39
    • G11B5/3967G11B5/3106G11B5/313Y10T29/49032
    • A computer disk drive (22) having a write head (52) which includes a coil (38), a photoresist insulation layer (66) formed on the coil (38), and an insulation shell layer (102) which is formed on the photoresist insulation layer (66). In the first preferred embodiment (100), the top pole (42) of the write head (52) is formed on the insulation shell layer (102).In the second preferred embodiment (200), the disk drive write gap (76) is formed on the insulation shell layer (102) and the top pole (42) of the write head (52) is formed on the write gap (76).The insulation shell layers (102) in both embodiments are preferably made of dielectric materials (103).Methods of fabrication for these embodiments are also disclosed.
    • 一种具有写入头(52)的计算机磁盘驱动器(22),包括线圈(38),形成在线圈(38)上的光致抗蚀剂绝缘层(66)和形成在线圈上的绝缘外壳层 光刻胶绝缘层(66)。 在第一优选实施例(100)中,写头(52)的顶极(42)形成在绝缘壳层(102)上。 在第二优选实施例(200)中,磁盘驱动器写入间隙(76)形成在绝缘外壳层(102)上,写入头(52)的顶极(42)形成在写入间隙(76)上, 。 两个实施例中的绝缘壳层(102)优选地由电介质材料(103)制成。 还公开了这些实施例的制造方法。
    • 58. 发明授权
    • Data storage and retrieval apparatus with thin film read head having a planar sensor element and an extra gap and method of fabrication thereof
    • 具有薄膜读取头的数据存储和检索装置具有平面传感器元件和额外的间隙及其制造方法
    • US06801408B1
    • 2004-10-05
    • US09705420
    • 2000-11-02
    • Yingjian ChenRonald A. BarrHau-Ching Tong
    • Yingjian ChenRonald A. BarrHau-Ching Tong
    • G11B539
    • G11B5/3916
    • In at least one embodiment, the apparatus of the invention is a read sensor which includes a shield, a sensor element, a read gap positioned between the shield and the sensor element, and an extra gap positioned between the shield and the sensor element and adjacent the read gap. The sensor element is positioned in a sensor layer. With the sensor element and the shield separated by only the relatively thin gap layer, high sensitivity of the sensor element is obtained. Further, by placing the relatively thick extra gap between the shield and the sensor layer and about the sensor element, the potential for shorting is minimized. The shield can be planarized to keep the read gap and the sensor layer at, and about, the sensor element substantially planar. This, in turn, results in improved control of sensor track widths and greatly reduces the potential for pooling of photoresist. In at least one embodiment, the method of the invention is for fabricating a read sensor and includes depositing a read gap onto a planarized shield, depositing an extra gap adjacent an exposed portion of the read gap, and depositing a sensor element onto the exposed portion of the first gap and adjacent to the extra gap.
    • 在至少一个实施例中,本发明的装置是读取传感器,其包括屏蔽件,传感器元件,位于屏蔽件和传感器元件之间的读取间隙,以及位于屏蔽件和传感器元件之间的相邻的间隙 读差距。 传感器元件位于传感器层中。 传感器元件和屏蔽仅由相对薄的间隙层隔开,可以获得传感器元件的高灵敏度。 此外,通过在屏蔽和传感器层之间以及传感器元件周围放置相对较厚的额外间隙,使短路的可能性最小化。 可以将屏蔽层平坦化,以将读取的间隙和传感器层保持在传感器元件的基本平面上并且围绕其传播。 这反过来导致传感器轨道宽度的改进的控制,并且大大降低了光致抗蚀剂的集合的潜力。 在至少一个实施例中,本发明的方法用于制造读取传感器,并且包括将读取间隙沉积在平坦化屏蔽上,在读取间隙的暴露部分附近沉积额外的间隙,以及将传感器元件沉积到暴露部分上 的第一个间隙并且与额外的间隙相邻。
    • 59. 发明授权
    • High resistivity FeXN sputtered films for magnetic storage devices and method of fabrication
    • 用于磁存储装置的高电阻率FeXN溅射膜及其制造方法
    • US06410170B1
    • 2002-06-25
    • US09315863
    • 1999-05-20
    • Yingjian ChenChester Qian
    • Yingjian ChenChester Qian
    • G11B566
    • G11B5/851Y10S428/90
    • A preferred method of the present invention provides an improved thin film for carrying magnetic flux. With the preferred method, the magnetic thin film may be formed by depositing Fe by reactive sputtering using N2 to form a thin film comprising &agr;-Fe and &ggr;-Fe4N. With this method, the relative percentage of &ggr;-Fe4N in the deposited film is increased to provide expanding lattice constants for both the &agr;-Fe and the &ggr;-Fe4N. Increasing &ggr;-Fe4N increases resistivity while expanding lattice constants to provide improved coercivity at higher resistivity. Increasing the percentage of &ggr;-Fe4N to provide expanding lattice constants for both the &agr;-Fe and the &ggr;-Fe4N may be accomplished by adjusting sputtering power, N2 gas percentage, a flow rate of N2, and substrate bias. In some embodiments, high sputtering power of about 3-4 kW with about 15-30 percent of N2 may be used to sputter FeX, where X is selected from the group consisting of Rh, Ta, Hf, Al, Zr, Ti, Ru, Si, Cr, V, Si, Sr, Nb, Mo, Ru, and Pd, to provide expanding &agr;-Fe and &ggr;-Fe2N lattice constants. In some embodiments, FeXN films having resistivity values greater than about 50 &mgr;&OHgr;cm, 80 &mgr;&OHgr;cm, 100 &mgr;&OHgr;cm, 115 &mgr;&OHgr;cm, or more, for coercivity values less than about 10 Oe, 5 Oe, or 3 Oe are possible, for values of Bs greater than around 12 kG to 17 kG. Embodiments may be used for pole or shield structures in magnetic heads for data storage and retrieval apparatuses to improve high frequency performance.
    • 本发明的优选方法提供了用于承载磁通量的改进的薄膜。 利用优选的方法,可以通过使用N 2的反应溅射沉积Fe以形成包含α-Fe和γ-Fe 4 N的薄膜来形成磁性薄膜。 利用该方法,沉积膜中的γ-Fe 4 N的相对百分比增加,以提供α-Fe和γ-Fe4N两者的扩展晶格常数。 增加的γ-Fe4N增加电阻率同时扩大晶格常数以提供更高的电阻率的矫顽力。 通过调整溅射功率,N 2气体百分比,N2的流量和衬底偏压,可以提高γ-Fe 4 N的比例以提供α-Fe和γ-Fe 4 N的扩展晶格常数。 在一些实施例中,可以使用约3-4kW的高溅射功率,约15-30%的N 2溅射FeX,其中X选自Rh,Ta,Hf,Al,Zr,Ti,Ru ,Si,Cr,V,Si,Sr,Nb,Mo,Ru和Pd,以提供扩展的α-Fe和γ-Fe2N晶格常数。 在一些实施方案中,对于低于约10Oe,5Oe或3Oe的矫顽力值,具有大于约50μOMEGAcm,80mΩEGcm,100μOMEGAcm,115μOMEGAcm或更大的电阻率值的FeXN膜是可能的, 大约12 kG到17 kG。 实施例可以用于磁头中的磁极或屏蔽结构,用于数据存储和检索装置,以改善高频性能。
    • 60. 发明授权
    • Magnetoresistive sensor having hard biased current perpendicular to the plane sensor
    • 具有垂直于平面传感器的硬偏置电流的磁阻传感器
    • US06353318B1
    • 2002-03-05
    • US09523587
    • 2000-03-10
    • Kyusik SinYingjian ChenNingja ZhuBill Crue
    • Kyusik SinYingjian ChenNingja ZhuBill Crue
    • G01R3302
    • B82Y25/00B82Y10/00G01R33/093G11B5/3903G11B5/3909G11B5/3932G11B5/3967G11B2005/3996
    • The apparatus of the present invention is embodied in a magnetic field sensor having a magnetoresistive element, a magnetic bias layer for biasing the magnetoresistive element with a magnetic field, and an electrical insulator positioned between the magnetic bias layer and the magnetoresistive element. The insulator prevents the flow of electrical current between the magnetoresistive element and the magnetic bias layer and at least a portion of the insulator allows passage of the magnetic field from the magnetic bias layer to the magnetoresistive element such that the magnetoresistive element is biased. The method of the present invention is embodied in a method for fabricating a magnetic field sensor having the steps of forming a magnetoresistive element, forming a lower insulator with a main section and an end section over at least a portion of the magnetoresistive element, forming a magnetic bias layer over the main section of the lower insulator, and forming an upper insulator over the magnetic bias layer and over the end section of the lower insulator, such that the magnetic bias layer is electrically insulated from the magnetoresistive element.
    • 本发明的装置体现在具有磁阻元件的磁场传感器,用于利用磁场偏置磁阻元件的磁偏置层和位于磁偏置层和磁阻元件之间的电绝缘体。 绝缘体防止磁阻元件和磁偏置层之间的电流的流动,并且绝缘体的至少一部分允许磁场从磁偏置层通过到磁阻元件,使得磁阻元件被偏置。 本发明的方法体现在一种用于制造磁场传感器的方法,该磁场传感器具有以下步骤:形成磁阻元件,在主阻抗元件的至少一部分上形成具有主部分和端部的下绝缘体,形成 在所述下绝缘体的主部分上方形成磁偏置层,并且在所述磁偏置层上方并在所述下绝缘体的所述端部上方形成上绝缘体,使得所述磁偏置层与所述磁阻元件电绝缘。