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    • 51. 发明申请
    • MANUFACTURING METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    • 半导体集成电路器件的制造方法
    • US20090286392A1
    • 2009-11-19
    • US12411387
    • 2009-03-25
    • Hiroyuki MasudaHiroshi OshitaNobuhiro Konishi
    • Hiroyuki MasudaHiroshi OshitaNobuhiro Konishi
    • H01L21/768
    • H01L21/02074H01L21/67046H01L21/67051H01L21/67219H01L21/67745H01L21/76808H01L21/76832H01L21/76834H01L2221/1036
    • A Cu-CMP step applied to processes for 130 nm, 90 nm, and 65 nm technical nodes or the like mainly employs slurry to which an anticorrosive agent is added for preventing corrosion of Cu wiring. The inventors of the present application have studied and clearly found that in the Cu-CMP step using the slurry with the anticorrosive agent added thereto, the anticorrosive agent often forms complexes with Cu, which remain as foreign matter on a wafer in large quantity, leading to a reduction in yield, and in reliability of TDDB characteristics of the Cu wiring. In the invention of the present application, a post-CMP cleaning process involves applying wet cleaning to a wafer by supplying a cleaning solution, such as a chemical solution or pure water, to a device surface of the wafer substantially in a vertical direction with respect to the horizontal device surface, while rotating the wafer substantially about its center in the horizontal plane. The rotation speed of the wafer is set low such that the thickness of the cleaning solution over the entire device surface becomes substantially uniform.
    • 应用于130nm,90nm和65nm技术节点等的处理的Cu-CMP步骤主要采用添加有防腐蚀剂以防止Cu布线腐蚀的浆料。 本申请的发明人已经研究并清楚地发现,在使用添加有防锈剂的浆料的Cu-CMP步骤中,防腐剂通常与Cu大量形成与Cu大量的复合物,其作为异物留在晶片上,导致 降低产量,并且在Cu布线的TDDB特性的可靠性方面。 在本申请的发明中,后CMP清洗工艺涉及通过向晶片的装置表面提供基本上沿垂直方向的清洁溶液(例如化学溶液或纯水)向晶片施加湿清洗 同时使晶片基本上绕其水平面的中心旋转。 将晶片的旋转速度设定得较低,使得整个器件表面上的清洁溶液的厚度变得基本均匀。
    • 57. 发明授权
    • Driving circuit for semiconductor element
    • 半导体元件驱动电路
    • US5111061A
    • 1992-05-05
    • US704593
    • 1991-05-23
    • Hiroyuki Masuda
    • Hiroyuki Masuda
    • H03K17/08H03K17/0812H03K17/082H03K17/60
    • H03K17/08126H03K17/0826
    • A driving circuit for a semiconductor element to be controlled by a first and second transistors being connected in series to selectively take ON-operation responsive to application of forward of reverse bias, comprises a reverse bias stop judging circuit having a detecting circuit for detecting reverse bias current being connected in a circuit which connects the second transistor with the semiconductor element to be controlled, a level detecting means for detecting that reverse bias current continuously exceeds a set level for a predetermined time, according to the detected result of the detecting circuit, means for temporarily stopping application of reverse bias to the semiconductor element to be controlled according to the detected output of the level detecting means, and means for restarting application of reverse bias after a predetermined time.
    • 用于由串联连接的第一和第二晶体管控制的半导体元件的驱动电路,以响应于反向偏置正向的选择性地接通操作,包括具有用于检测反向偏置的检测电路的反向偏置停止判断电路 电流连接在将第二晶体管与待控制的半导体元件连接的电路中,根据检测电路的检测结果,检测反向偏置电流连续超过设定电平达预定时间的电平检测装置, 用于根据电平检测装置的检测输出临时停止对待控制的半导体元件的反向偏置;以及在预定时间之后重新开始施加反向偏压的装置。
    • 58. 发明授权
    • Operation control method for nuclear reactor
    • 核反应堆运行控制方法
    • US4647421A
    • 1987-03-03
    • US597032
    • 1984-04-05
    • Masahisa OhashiHiroyuki Masuda
    • Masahisa OhashiHiroyuki Masuda
    • G21D3/12G21C7/00G21C7/36G21C7/06
    • G21C7/00G21Y2002/201G21Y2004/40Y02E30/39
    • An operation control method for a nuclear reactor performing a load follow-up operation in accordance with a load variation program, wherein a core reactivity which changes with time in a first cycle of operation is predicted based on the load variation program and data for analyzing dynamic characteristics of the reactor, and a change in a liquid poison concentration in the first cycle of operation is obtained based on the predicted reactivity, and reactor power is controlled in the first cycle of operation by adjusting the liquid poison concentration in accordance with the obtained change. When the liquid poison concentration is adjusted and control rods are manipulated, a reactivity introduced by these operations in the first cycle of operation is obtained, and an adjustment to be made to the liquid poison concentration in the second cycle of operation which is the next cycle of operation following the first cycle of operation is obtained from the reactivity introduced in the first cycle of operation. When the change in reactivity in the second cycle of operation becomes equal to that in the first cycle of operation, and reactor power is controlled in the second cycle of operation by performing the obtained adjustment of the liquid poison concentration.
    • 一种用于核反应堆的操作控制方法,其根据负荷变化程序执行负载跟踪操作,其中基于负载变化程序和用于分析动态的数据预测在第一操作周期中随时间改变的铁心反应性 基于预测的反应性,获得反应器的特性和第一操作循环中的液体毒素浓度的变化,并且通过根据获得的变化调整液体毒素浓度,在第一操作循环中控制反应堆功率 。 当调节液体毒素浓度并控制控制棒时,获得在第一操作循环中通过这些操作引入的反应,并且对作为下一循环的第二操作循环中的液体毒物浓度进行调整 在第一操作周期之后的操作是从在第一操作周期中引入的反应获得的。 当第二操作循环中的反应性变化与第一操作循环中的反应性变化相同时,通过进行液体毒素浓度的调整,在第二操作循环中控制反应堆功率。