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51. 发明授权

US5530715A Vertical cavity surface emitting laser having continuous grading 失效
标题翻译：具有连续分级的垂直腔表面发射激光
公开(公告)号：US5530715A
公开(公告)日：1996-06-25
申请号：US346559
申请日：1994-11-29
申请人： Chan-Long Shieh , Michael S. Lebby , Hsing-Chung Lee , Piotr Grodzinski
发明人： Chan-Long Shieh , Michael S. Lebby , Hsing-Chung Lee , Piotr Grodzinski
IPC分类号： H01S5/00 , H01S5/183 , H01S3/08
CPC分类号： H01S5/183 , B82Y20/00 , H01S5/3054 , H01S5/3215 , H01S5/34313
摘要： A first stack of distributed Bragg mirrors having alternating layers of aluminum gallium arsenide differing in concentrations of an aluminum are disposed on a surface of a substrate with a first plurality of continuous gradient layers positioned between the alternating layers of differing aluminum concentrations to dynamically move the aluminum concentration from one of the alternating layer to another alternating layers. A first cladding region is disposed on the first stack of distributed Bragg mirrors. An active region is disposed on the first cladding region with a second cladding region being dispose on the active region. A second stack of distributed Bragg mirrors having alternating layers of aluminum gallium arsenide differing concentrations of aluminum are disposed on the second cladding region with a second plurality of continuous gradient layers being positioned between the alternating layers of differing aluminum concentrations to dynamically change the aluminum concentration from one of the altering layers to another alternating layers.
摘要翻译：具有不同于铝浓度的铝砷化镓的交替层的分布布拉格反射镜的第一堆叠被布置在基板的表面上，其中第一多个连续梯度层位于不同铝浓度的交替层之间以动态地移动铝从交替层之一到另一个交替层的浓度。第一包层区域布置在分布布拉格反射镜的第一堆叠上。有源区设置在第一包层区上，第二包层区设置在有源区上。具有不同浓度的铝的交替铝砷化镓层的第二层布拉格反射镜布置在第二覆层区域上，第二多个连续梯度层位于不同铝浓度的交替层之间以动态地将铝浓度从另一个交替层的改变层之一。

52. 发明授权

US5446752A VCSEL with current blocking layer offset 失效
标题翻译： VCSEL具有当前阻塞层偏移
公开(公告)号：US5446752A
公开(公告)日：1995-08-29
申请号：US271534
申请日：1994-07-07
申请人： Donald E. Ackley , Chan-Long Shieh , Michael S. Lebby , Hsing-Chung Lee , Piotr Grodzinski
发明人： Donald E. Ackley , Chan-Long Shieh , Michael S. Lebby , Hsing-Chung Lee , Piotr Grodzinski
IPC分类号： H01S5/02 , H01S5/183 , H01S3/19
CPC分类号： H01S5/18308 , H01S5/0207 , H01S5/18327 , H01S5/1833 , H01S5/18358 , H01S5/2063 , H01S5/2222
摘要： A top-emitting vertical cavity surface emitting laser with a current blocking layer at the substrate and offset layers in the mirror stack providing an optical waveguide aligned to the injected current distribution.
摘要翻译：在衬底上具有电流阻挡层的顶发射垂直腔表面发射激光器和反射镜堆叠中的偏移层，提供与注入的电流分布对准的光波导。

53. 发明授权

US5359618A High efficiency VCSEL and method of fabrication 失效
标题翻译：高效VCSEL和制造方法
公开(公告)号：US5359618A
公开(公告)日：1994-10-25
申请号：US69812
申请日：1993-06-01
申请人： Michael S. Lebby , Chan-Long Shieh , Hsing-Chung Lee
发明人： Michael S. Lebby , Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： H01S5/00 , H01S5/183 , H01S3/19
CPC分类号： H01S5/18313 , H01S5/18316 , H01S5/3215 , Y10S438/911
摘要： A high efficiency vertical cavity surface emitting laser with first and second mirror stacks and an active area sandwiched therebetween. The second mirror stack is formed into a mesa with exposed end surface and outer sidewalls and a centrally located light emission region. A portion of the mesa adjacent the exposed outer sidewalls has a reduced electrical conductance so as to spread operating current from the outer sidewalls into the centrally located light emission region. The electrical conductance of the portion is reduced by oxidizing or etching the outer sidewalls.
摘要翻译：具有第一和第二反射镜叠层的高效率垂直腔表面发射激光器和夹在其间的有源区域。第二反射镜叠层形成为具有暴露的端表面和外侧壁和位于中心的发光区域的台面。邻近暴露的外侧壁的台面的一部分具有降低的电导，从而将工作电流从外侧壁扩展到中心定位的发光区域。通过氧化或蚀刻外侧壁来减小该部分的导电性。

54. 发明授权

US08377743B2 Laser annealing of metal oxide semiconductor on temperature sensitive substrate formations 有权
标题翻译：金属氧化物半导体在温度敏感衬底地层上的激光退火
公开(公告)号：US08377743B2
公开(公告)日：2013-02-19
申请号：US12874145
申请日：2010-09-01
申请人： Chan-Long Shieh , Hsing-Chung Lee
发明人： Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： H01L21/00
CPC分类号： H01L21/268 , H01L29/66969 , H01L29/78603 , H01L29/78693
摘要： A method of annealing a metal oxide on a temperature sensitive substrate formation includes the steps of providing a temperature sensitive substrate formation and forming a spacer layer on a surface of the substrate formation. A metal oxide semiconductor device is formed on the spacer layer, the device includes at least a layer of amorphous metal oxide semiconductor material, an interface of the amorphous metal oxide layer with a dielectric layer, and a gate metal layer adjacent the layer of amorphous metal oxide semiconductor material and the interface. The method then includes the step of at least partially annealing the layer of metal oxide semiconductor material by heating the adjacent gate metal layer with pulses of infra red radiation to improve the mobility and operating stability of the amorphous metal oxide semiconductor material while retaining at least the amorphous metal oxide semiconductor material adjacent the gate metal layer amorphous.
摘要翻译：在温度敏感的基板形成上退火金属氧化物的方法包括以下步骤：在基板结构的表面上形成温度敏感的基板并形成间隔层。金属氧化物半导体器件形成在间隔层上，该器件至少包括一层非晶金属氧化物半导体材料，非晶金属氧化物层与电介质层的界面，以及与非晶金属层相邻的栅极金属层氧化物半导体材料和界面。该方法然后包括通过用红外辐射脉冲加热相邻栅极金属层来至少部分地退火金属氧化物半导体材料层的步骤，以提高非晶金属氧化物半导体材料的迁移率和操作稳定性，同时至少保留非晶态金属氧化物半导体材料与栅极金属层相邻无定形。

55. 发明授权

US08222077B2 Metal-insulator-metal (MIM) devices and their methods of fabrication 有权
标题翻译：金属绝缘体金属（MIM）器件及其制造方法
公开(公告)号：US08222077B2
公开(公告)日：2012-07-17
申请号：US11983205
申请日：2007-11-06
申请人： Xiong Gong , Kaixia Yang , Gang Yu , Boo Jorgen Larŝ Nilsson , Chan-Long Shieh , Hsing-Chung Lee , Fatt Foong
发明人： Xiong Gong , Kaixia Yang , Gang Yu , Boo Jorgen Larŝ Nilsson , Chan-Long Shieh , Hsing-Chung Lee , Fatt Foong
IPC分类号： H01L21/28
CPC分类号： G02F1/1365 , G02F1/167 , H01G11/48 , H01G11/56 , H01L45/00 , Y02E60/13 , Y10S438/957
摘要： Two-terminal switching devices of MIM type having at least one electrode formed by a liquid phase processing method are provided for use in active matrix backplane applications; more specifically, MIM devices with symmetric current-voltage characteristics are applied for LCD active matrix backplane applications, and MIM devices with asymmetric current-voltage characteristics are applied for active matrix backplane implementation for electrophoretic displays (EPD) and rotating element displays. In particular, the combination of the bottom metal, metal-oxide insulator and solution-processible top conducting layer enables high throughput, roll-to-roll process for flexible displays.
摘要翻译：提供具有通过液相处理方法形成的至少一个电极的MIM型的两端开关装置用于有源矩阵背板应用; 更具体地说，将具有对称电流 - 电压特性的MIM器件应用于LCD有源矩阵背板应用，并且将具有不对称电流 - 电压特性的MIM器件应用于电泳显示器（EPD）和旋转元件显示器的有源矩阵背板实施。特别地，底部金属，金属氧化物绝缘体和可溶液加工的顶部导电层的组合可实现灵活显示器的高生产率，卷对卷过程。

56. 发明申请

US20110147761A1 TWO-TERMINAL SWITCHING DEVICES AND THEIR METHODS OF FABRICATION 有权
标题翻译：两端开关器件及其制造方法
公开(公告)号：US20110147761A1
公开(公告)日：2011-06-23
申请号：US13015013
申请日：2011-01-27
申请人： Gang Yu , Chan-Long Shieh , Hsing-Chung Lee
发明人： Gang Yu , Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： H01L29/12 , H01L21/28 , H01L21/20
CPC分类号： H01L29/861 , G02F1/1365 , G02F1/167 , H01L29/22 , H01L29/417 , H01L29/786 , H01L45/00 , H01L51/0035 , H01L51/0579 , H01L51/0587
摘要： Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active matrix displays, e.g., in electrophoretic, rotating element and liquid crystal displays. The switching devices include two electrodes, and a layer of a broad band semiconducting material residing between the electrodes. According to one example, the cathode comprises a metal having a low work function, the anode comprises an organic material having a p+ or p++ type of conductivity, and the broad band semiconductor comprises a metal oxide. The work function difference between the cathode and the anode material is preferably at least about 0.6 eV. The on/off current ratios of at least 10,000 over a voltage range of about 15 V can be achieved. The devices can be formed, if desired, on flexible polymeric substrates having low melting points.
摘要翻译：提供了具有高导通/截止电流比和高击穿电压特性的两端开关器件。这些器件可以用作有源矩阵显示器的驱动电路中的开关，例如在电泳，旋转元件和液晶显示器中。开关器件包括两个电极和位于电极之间的宽带半导体材料层。根据一个示例，阴极包括具有低功函数的金属，阳极包括具有p +或p ++类型的导电性的有机材料，并且宽带半导体包括金属氧化物。阴极和阳极材料之间的功函数差异优选为至少约0.6eV。可以实现在约15V的电压范围内的至少10,000的开/关电流比。如果需要，可以在具有低熔点的柔性聚合物基材上形成装置。

57. 发明授权

US07898042B2 Two-terminal switching devices and their methods of fabrication 有权
标题翻译：两端开关器件及其制造方法
公开(公告)号：US07898042B2
公开(公告)日：2011-03-01
申请号：US11801735
申请日：2007-05-09
申请人： Gang Yu , Chan-Long Shieh , Hsing-Chung Lee
发明人： Gang Yu , Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： H01L21/00 , H01L47/00 , H01L29/04
CPC分类号： H01L29/861 , G02F1/1365 , G02F1/167 , H01L29/22 , H01L29/417 , H01L29/786 , H01L45/00 , H01L51/0035 , H01L51/0579 , H01L51/0587
摘要： Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active matrix displays, e.g., in electrophoretic, rotataing element and liquid crystal displays. The switching devices include two electrodes, and a layer of a broad band semiconducting material residing between the electrodes. According to one example, the cathode comprises a metal having a low work function, the anode comprises an organic material having a p+ or p++ type of conductivity, and the broad band semiconductor comprises a metal oxide. The work function difference between the cathode and the anode material is preferably at least about 0.6 eV. The on/off current ratios of at least 10,000 over a voltage range of about 15 V can be achieved. The devices can be formed, if desired, on flexible polymeric substrates having low melting points.
摘要翻译：提供了具有高导通/截止电流比和高击穿电压特性的两端开关器件。这些装置可以用作有源矩阵显示器的驱动电路中的开关，例如在电泳，旋转元件和液晶显示器中。开关器件包括两个电极和位于电极之间的宽带半导体材料层。根据一个示例，阴极包括具有低功函数的金属，阳极包括具有p +或p ++类型的导电性的有机材料，并且宽带半导体包括金属氧化物。阴极和阳极材料之间的功函数差异优选为至少约0.6eV。可以实现在约15V的电压范围内的至少10,000的开/关电流比。如果需要，可以在具有低熔点的柔性聚合物基材上形成装置。

58. 发明申请

US20100314072A1 BASE PLATE WITH TAILORED INTERFACE 审中-公开
标题翻译：带有定制接口的基板
公开(公告)号：US20100314072A1
公开(公告)日：2010-12-16
申请号：US12483147
申请日：2009-06-11
申请人： Hsing-Chung Lee , Rajiv Tandon , Ralph Remsburg
发明人： Hsing-Chung Lee , Rajiv Tandon , Ralph Remsburg
IPC分类号： H01L23/36 , B23P11/00 , F28F7/00
CPC分类号： H01L23/4924 , H01L23/3735 , H01L23/473 , H01L2924/0002 , Y10T29/49826 , Y10T29/49968 , H01L2924/00
摘要： Base plate apparatus for mounting IGBT modules, the base plate apparatus includes a base plate with a mounting surface and an opposed surface. A tailored coefficient of thermal expansion interface layer is directly bonded to the mounting surface of the base plate and forms a mounting surface for mounting IGBT modules. The interface layer has a coefficient of thermal expansion ranging from approximately 4 ppm/° C. to approximately 12 ppm/° C.
摘要翻译：用于安装IGBT模块的基板装置，基板装置包括具有安装表面和相对表面的基板。定制的热膨胀界面层系数直接接合到基板的安装面上，形成安装IGBT模块的安装面。界面层的热膨胀系数为约4ppm /℃至约12ppm /℃。

59. 发明授权

US07605026B1 Self-aligned transparent metal oxide TFT on flexible substrate 有权
标题翻译：柔性基板上的自对准透明金属氧化物TFT
公开(公告)号：US07605026B1
公开(公告)日：2009-10-20
申请号：US11949477
申请日：2007-12-03
申请人： Chan-Long Shieh , Hsing-Chung Lee
发明人： Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： H01L29/49
CPC分类号： H01L29/7869 , H01L29/78603
摘要： A method of fabricating self-aligned metal oxide TFTs on transparent flexible substrates is disclosed and includes the steps of providing a transparent flexible substrate with at least an opaque first metal TFT electrode in a supporting relationship on the front surface of the substrate and a layer of transparent material, including at least one of a metal oxide semiconductor and/or a gate dielectric, on the front surface of the substrate and the first metal TFT electrode. A layer of photoresist is positioned in overlying relationship to the layer of transparent material. Dual photo masks are positioned over the front and rear surfaces of the substrate, respectively, and the layer of photoresist is exposed. The layer of photoresist is developed and used to form a layer of second metal.
摘要翻译：公开了一种在透明柔性基板上制造自对准金属氧化物TFT的方法，包括以下步骤：提供透明柔性基板，所述透明柔性基板至少具有支撑关系的不透明第一金属TFT电极在基板的前表面上，在基板的前表面和第一金属TFT电极上包括金属氧化物半导体和/或栅极电介质中的至少一种的透明材料。一层光致抗蚀剂以与透明材料层重叠的关系定位。双光掩模分别位于基板的前表面和后表面上，并且光致抗蚀剂层被暴露。显影光致抗蚀剂层并用于形成第二金属层。

60. 发明授权

US06577658B1 Method and apparatus for planar index guided vertical cavity surface emitting lasers 有权
标题翻译：用于平面折射率引导的垂直腔表面发射激光器的方法和装置
公开(公告)号：US06577658B1
公开(公告)日：2003-06-10
申请号：US09400359
申请日：1999-09-20
申请人： Hsing-Chung Lee , Liew-Chuang Chui
发明人： Hsing-Chung Lee , Liew-Chuang Chui
IPC分类号： H01S500
CPC分类号： H01S5/18316 , H01S5/18333 , H01S5/2063
摘要： Planar index guided vertical cavity surface emitting laser (PIG VCSEL) utilizes index guiding to provide improved optical confinement and proton implantation to improve current confinement. Index guiding is achieved by etching index guide openings (holes or partial ridges) around the optical confinement region and may be adjusted by varying the etched volume of the index guide openings (holes and partial ridges). The top contact surface area is increased in the PIG VCSEL thereby lowering contact and device resistance to improve VCSEL performance further. The PIG VCSEL is a substantially planarized device for ease of manufacture.
摘要翻译：平面折射率引导垂直腔面发射激光器（PIG VCSEL）利用指数引导提供改进的光限制和质子注入，以改善电流限制。通过在光学限制区域周围蚀刻引导引导开口（孔或部分脊）来实现引导引导，并且可以通过改变引导引导开口（孔和部分脊）的蚀刻体积来调整引导引导。在PIG VCSEL中，顶部接触表面积增加，从而降低接触和器件电阻，从而进一步提高VCSEL性能。 PIG VCSEL是一种基本上平面化的器件，易于制造。

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