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51. 发明申请

US20110298024A1 SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THEREOF AS WELL AS DRIVING METHOD OF SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置及其制造方法以及固态成像装置的驱动方法
公开(公告)号：US20110298024A1
公开(公告)日：2011-12-08
申请号：US13211362
申请日：2011-08-17
申请人： Yoshiaki Kitano , Hideshi Abe , Jun Kuroiwa , Kiyoshi Hirata , Hiroaki Ohki , Nobuhiro Karasawa , Ritsuo Takizawa , Mitsuru Yamashita , Mitsuru Sato , Katsunori Kokubun
发明人： Yoshiaki Kitano , Hideshi Abe , Jun Kuroiwa , Kiyoshi Hirata , Hiroaki Ohki , Nobuhiro Karasawa , Ritsuo Takizawa , Mitsuru Yamashita , Mitsuru Sato , Katsunori Kokubun
IPC分类号： H01L31/113
CPC分类号： H01L27/14601 , H01L27/14689 , H01L27/14806 , H04N5/335
摘要： A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.
摘要翻译：具有这样一种结构的固态成像装置，该结构使得用于读取信号电荷的电极设置在构成像素的光接收传感器部分的一侧; 将预定的电压信号V施加到形成为覆盖除了光接收传感器部分之外的图像拾取区域的遮光膜; 第二导电型半导体区域形成在构成光接收传感器部分的光电转换区域的第一导电型半导体区域的表面上的中心; 并且在第一导电型半导体区域的电极侧的端部的表面上形成比第二导电型半导体区域的杂质浓度低的区域，像素分离区域。

52. 发明授权

US07989938B2 Semiconductor device for fingerprint recognition 有权
标题翻译：用于指纹识别的半导体器件
公开(公告)号：US07989938B2
公开(公告)日：2011-08-02
申请号：US12382532
申请日：2009-03-18
申请人： Akira Okada , Mitsuru Sato
发明人： Akira Okada , Mitsuru Sato
IPC分类号： H01L238/48
CPC分类号： G06K9/0002 , H01L2224/05573 , H01L2224/13025 , H01L2224/16225 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/4824 , H01L2224/73204 , H01L2224/73265 , H01L2924/00014 , H01L2924/1815 , H01L2924/00 , H01L2224/05599
摘要： A semiconductor device is disclosed that performs fingerprint recognition on the electrostatic-capacity principle. A finger sweeping across a fingerprint recognition area of a semiconductor chip provides positive fingerprint recognition operations with improved reliability.The semiconductor device includes the semiconductor chip having a sensor unit that performs fingerprint recognition, and a substrate having an opening formed in the position corresponding to the sensor unit. The semiconductor chip is flip chip bonded to the substrate such that the sensor unit corresponds to the opening, and except for the formed position of the opening, an under-fill material is provided between the semiconductor chip and the substrate.
摘要翻译：公开了对静电容量原理执行指纹识别的半导体器件。跨越半导体芯片的指纹识别区域的手指提供了正确的指纹识别操作，并提高了可靠性。半导体器件包括具有执行指纹识别的传感器单元的半导体芯片和具有形成在与传感器单元对应的位置的开口的基板。将半导体芯片倒装贴合到基板上，使得传感器单元对应于开口，除了开口的形成位置之外，在半导体芯片和基板之间设置有未填充材料。

53. 发明申请

US20110039507A1 WIRELESS TERMINAL AND RETRANSMISSION METHOD 失效
标题翻译：无线终端和恢复方法
公开(公告)号：US20110039507A1
公开(公告)日：2011-02-17
申请号：US12933343
申请日：2008-12-08
申请人： Mitsuru Sato
发明人： Mitsuru Sato
IPC分类号： H04B17/00
CPC分类号： H04L1/0002 , H04L1/1887
摘要： A wireless terminal capable of securing the number of station units capable of simultaneous communication with one unit of access point, reducing power consumption, and ensuring stable communication quality. In the wireless terminal (100), an interference determining section (109) determines whether or not an interference wave is at a predetermined level or more on the basis of the RSSI and SNR of the received signals which are calculated by an RSSI (Received Signal Strength Indicator) calculating section (104) and SNR (Signal to Noise Ratio) calculating section (105) and the presence/absence of a demodulation error notified from a demodulation section (108). A number-of-retransmission upper limit setting section (113) sets the upper limit of the number of retransmission smaller than when the interference wave is at the predetermined level or lower if the interference wave is at the predetermined level or more. A WLAN transmitting circuit (115) repeats the transmission of a transmitting signal by the upper limit number of retransmission till the transmission of the transmitting signal is successful.
摘要翻译：一种无线终端，其能够确保能够与一个接入点同时通信的站单元的数量，降低功耗，并确保稳定的通信质量。在无线终端（100）中，干扰判定部（109）基于RSSI（接收信号（RSSI））计算出的接收信号的RSSI和SNR，判断干扰波是否处于规定级别以上强度指示符计算部分（104）和SNR（信噪比）计算部分（105）以及从解调部分（108）通知的解调错误的存在/不存在。重发次数上限设定部（113）将发送次数的上限设定为比干扰波处于预定电平以上时的干扰波处于规定电平以下的上限。 WLAN发送电路（115）通过重传的上限次数重复发送发送信号，直到发送信号的发送成功为止。

54. 发明申请

US20100205914A1 Automatic Banding Packing Machine and Automatic Banding Packing System 有权
标题翻译：自动包装机和自动捆扎包装系统
公开(公告)号：US20100205914A1
公开(公告)日：2010-08-19
申请号：US12670021
申请日：2008-07-10
申请人： Keisho Yamamoto , Yoshikatsu Aizawa , Mitsuru Sato , Eiji Tobita
发明人： Keisho Yamamoto , Yoshikatsu Aizawa , Mitsuru Sato , Eiji Tobita
IPC分类号： B65B11/00
CPC分类号： B65B65/003 , B65B13/06 , B65B13/18
摘要： An automatic banding packing machine and its automatic banding packing system are provided in which conveying lines of an object to be packed can be aligned in a straight direction, an installation space can be small, the entire structure can be simplified, and moreover, band supply into a band guide arch can be conducted surely so as to enable continuous packing work.Solving MeansThe automatic banding packing machine is provided with a packing machine body having an upper-face table on which the object to be packed passes, a pair of vertical band guide arches arranged separately from each other above the upper-face table in a direction parallel with a passage direction of the object to be packed, and a horizontal band guide arch arranged above the upper-face table in the direction parallel with the passage direction of the object to be packed, and the pair of vertical band guide arches is configured to be movable between a standby position separated from the horizontal band guide arch and a communication position communicating with the horizontal band guide arch in a direction orthogonal to the passage direction of the object to be packed.
摘要翻译：提供一种自动带式包装机及其自动捆扎包装系统，其中待包装物体的输送线可以在直线方向上对齐，安装空间可小，整体结构可以简化，而且带式供应进入带导轨可以确保进行，以使连续包装工作。解决方案自动捆扎包装机设有一个包装机主体，该包装机主体具有上表面，待包装物通过该上表面;一对垂直带导向拱，在上表面上方彼此分开设置; 平行于要包装的物体的通过方向;以及水平带引导拱，其在与待包装物体的通过方向平行的方向上布置在上表面上方，并且一对垂直带引导弓构造成能够在与水平带引导拱顶分离的备用位置与与水平带引导弓连通的连通位置在与待包装物体的通过方向正交的方向上移动。

55. 发明授权

US07592122B2 Photoresist composition, and low-molecular compound and high-molecular compound for the photoresist composition 有权
标题翻译：光致抗蚀剂组合物和用于光致抗蚀剂组合物的低分子化合物和高分子化合物
公开(公告)号：US07592122B2
公开(公告)日：2009-09-22
申请号：US10553315
申请日：2004-04-15
申请人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida , Mitsuru Sato , Syogo Matsumaru , Hideo Hada
发明人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida , Mitsuru Sato , Syogo Matsumaru , Hideo Hada
IPC分类号： G03F7/004 , C08C19/28
CPC分类号： C07C43/126 , C07C43/162 , C07C43/1747 , C07C69/96 , C07C2601/14 , C07C2602/42 , G03F7/0046 , G03F7/0395 , G03F7/0397 , G03F7/0757 , Y10S430/108
摘要： A high-molecular compound and a low-molecular compound or both having an alkali-soluble site (i) wherein at least a part of the alkali-soluble site (i) is protected with (ii) a halogen atom-containing acetal type acid-dissociative, dissolution inhibiting group, as well as a photoresist composition comprising the same. The photoresist composition is highly stable during storage and can give a resist pattern excellent in sectional rectangular shape and having high transparency to an exposure light, particularly a light having a wavelength of 300 nm or less.
摘要翻译：具有碱溶性部位（i）的高分子化合物和低分子化合物或二者，其中至少一部分碱溶性部位（i）用（ⅱ）含卤原子的缩醛型酸 - 解离，溶解抑制基团，以及包含其的光致抗蚀剂组合物。光致抗蚀剂组合物在保存期间高度稳定，并且可以得到截面矩形形状优异并且对曝光光，特别是波长为300nm以下的光具有高透明度的抗蚀剂图案。

56. 发明申请

US20090078977A1 SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THEREOF AS WELL AS DRIVING METHOD OF SOLID-STATE IMAGING DEVICE 有权
公开(公告)号：US20090078977A1
公开(公告)日：2009-03-26
申请号：US12277982
申请日：2008-11-25
申请人： Yoshiaki Kitano , Hideshi Abe , Jun Kuroiwa , Kiyoshi Hirata , Hiroaki Ohki , Nobuhiro Karasawa , Ritsuo Takizawa , Mitsuru Yamashita , Mitsuru Sato , Katsunori Kokubun
发明人： Yoshiaki Kitano , Hideshi Abe , Jun Kuroiwa , Kiyoshi Hirata , Hiroaki Ohki , Nobuhiro Karasawa , Ritsuo Takizawa , Mitsuru Yamashita , Mitsuru Sato , Katsunori Kokubun
IPC分类号： H01L27/146
CPC分类号： H01L27/14601 , H01L27/14689 , H01L27/14806 , H04N5/335
摘要： A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

57. 发明申请

US20090072336A1 Solid-state imaging device and method for manufacturing thereof as well as driving method of solid-state imaging device 有权
标题翻译：固态成像装置及其制造方法以及固态成像装置的驱动方法
公开(公告)号：US20090072336A1
公开(公告)日：2009-03-19
申请号：US12200424
申请日：2008-08-28
申请人： Yoshiaki Kitano , Hideshi Abe , Jun Kuroiwa , Kiyoshi Hirata , Hiroaki Ohki , Nobuhiro Karasawa , Ritsuo Takizawa , Mitsuru Yamashita , Mitsuru Sato , Katsunori Kokubun
发明人： Yoshiaki Kitano , Hideshi Abe , Jun Kuroiwa , Kiyoshi Hirata , Hiroaki Ohki , Nobuhiro Karasawa , Ritsuo Takizawa , Mitsuru Yamashita , Mitsuru Sato , Katsunori Kokubun
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L27/14601 , H01L27/14689 , H01L27/14806 , H04N5/335
摘要： A solid-state imaging device having an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.
摘要翻译：具有用于读取信号电荷的电极的固态成像装置设置在构成像素的光接收传感器部分的一侧; 施加到形成为覆盖除了光接收传感器部分之外的图像拾取区域的遮光膜的预定电压信号; 形成在构成光接收传感器部的光电转换区域的第一导电型半导体区域的表面上的中心的第二导电型半导体区域; 以及在电极侧的端部的第一导电型半导体区域的表面上形成的第二导电型半导体区域的杂质浓度低于位于第一导电型半导体区域像素分离区域。

58. 发明申请

US20080090388A1 Method of fabricating semiconductor device and method for fabricating electronic device 失效
标题翻译：制造半导体器件的方法和用于制造电子器件的方法
公开(公告)号：US20080090388A1
公开(公告)日：2008-04-17
申请号：US11905961
申请日：2007-10-05
申请人： Mitsuru Sato , Sumio Utsunomiya
发明人： Mitsuru Sato , Sumio Utsunomiya
IPC分类号： H01L21/20
CPC分类号： H01L21/02667 , H01L21/02422 , H01L21/02532 , H01L21/02691 , H01L27/1285 , H01L29/66757
摘要： A method for fabricating a semiconductor device, comprising: forming a semiconductor film on a substrate; and recrystallizing the semiconductor film using as a heat source flame of a gas burner that uses hydrogen and oxygen gas mixture as a fuel.
摘要翻译：一种制造半导体器件的方法，包括：在衬底上形成半导体膜; 并且使用使用氢气和氧气混合物作为燃料的气体燃烧器的热源火焰来重结晶半导体膜。

59. 发明申请

US20080026504A1 Solid-state image pickup device and manufacturing method for the same 有权
公开(公告)号：US20080026504A1
公开(公告)日：2008-01-31
申请号：US11903873
申请日：2007-09-25
申请人： Yoshiaki Kitano , Nobuhiro Karasawa , Jun Kuroiwa , Hideshi Abe , Mitsuru Sato , Hiroaki Ohki
发明人： Yoshiaki Kitano , Nobuhiro Karasawa , Jun Kuroiwa , Hideshi Abe , Mitsuru Sato , Hiroaki Ohki
IPC分类号： H01L31/113
CPC分类号： H01L27/14843 , H01L27/14623 , H01L27/14689 , H01L27/14837
摘要： A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfer register (vertical register) for transferring the signal charge read by the reading gate. Therein, a groove is formed on the surface side of the substrate, and the transfer register and the reading gate are formed at the bottom part of the groove. With such a structure, in the solid-state image pickup device, reduction can be achieved for the smear characteristics, a reading voltage, noise, and others.

60. 发明申请

US20080017992A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080017992A1
公开(公告)日：2008-01-24
申请号：US11826224
申请日：2007-07-13
申请人： Masaru Kito , Mitsuru Sato , Yuzo Nagata , Koji Hashimoto
发明人： Masaru Kito , Mitsuru Sato , Yuzo Nagata , Koji Hashimoto
IPC分类号： H01L21/311 , H01L23/48
CPC分类号： H01L21/32139 , H01L21/0337 , H01L27/105 , H01L27/1052
摘要： A first hard mask is formed on a polysilicon film or a target member to be etched, on which a second hard mask composed of amorphous silicon is formed. Ions of boron or the like are implanted into a desired portion of the second hard mask, and then the first hard mask is etched with a mask of the second hard mask. Only the portion not ion-implanted of the second hard mask is etched off by wet etching. A sidewall film is formed on sidewalls of the first hard mask, and then the first hard mask having an upper portion exposed, not covered with the second hard mask is selectively etched off.
摘要翻译：第一硬掩模形成在多晶硅膜或要蚀刻的靶构件上，在其上形成由非晶硅构成的第二硬掩模。将硼等的离子注入到第二硬掩模的期望部分中，然后用第二硬掩模的掩模蚀刻第一硬掩模。通过湿式蚀刻仅蚀刻第二硬掩模未离子注入的部分。在第一硬掩模的侧壁上形成侧壁膜，然后选择性地蚀刻除去未被第二硬掩模覆盖的具有暴露的上部的第一硬掩模。

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