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    • 51. 发明申请
    • Backwash
    • 反洗
    • US20070007205A1
    • 2007-01-11
    • US10569565
    • 2004-08-27
    • Warren JohnsonThomas BeckFufang ZhaHuw LazaredesZhiyi Cao
    • Warren JohnsonThomas BeckFufang ZhaHuw LazaredesZhiyi Cao
    • B01D65/02
    • B01D65/08B01D61/14B01D63/02B01D2321/185
    • A method of backwashing a membrane filtration module (4), said module (4) including one or more membranes (5) located in a feed-containing vessel (3), the membranes (5) having a permeable wall which is subjected to a filtration operation wherein feed containing contaminant matter is applied to one side of the membrane wall and filtrate is withdrawn from the other side of the membrane wall, the method including: removing liquid from the feed-containing vessel (3) until the level of liquid in the feed-containing vessel (3) falls to a first level (L2) below an upper level of the membranes; suspending the filtration operation; performing a liquid backwash of the membrane wall until liquid level within the feed-containing vessel (3) rises to a second predetermined level (L1) above said first level; aerating the membrane surface with gas bubbles to dislodge fouling materials therefrom; performing a sweep or drain down of the feed-containing vessel (3) to remove the liquid containing the dislodged contaminant matter; and recommencing the filtration operation.
    • 一种反洗膜过滤模块(4)的方法,所述模块(4)包括位于含进料容器(3)中的一个或多个膜(5),所述膜(5)具有可渗透壁,所述膜 过滤操作,其中将含有污染物质的进料施加到膜壁的一侧,并且滤液从膜壁的另一侧排出,该方法包括:从含进料的容器(3)中除去液体,直到液体的液面 含饲料容器(3)在膜的上部水平面下降到第一水平(L 2); 暂停过滤操作; 执行膜壁的液体反冲洗,直到含饲料容器(3)内的液面上升到高于所述第一水平的第二预定水平(L 1) 用气泡对膜表面进行充气以从其中去除污垢物质; 进行含有进料的容器(3)的扫掠或排出以除去含有移出的污染物质的液体; 并重新进行过滤操作。
    • 58. 发明授权
    • Plasma etching installation
    • 等离子刻蚀安装
    • US06531031B1
    • 2003-03-11
    • US09623734
    • 2000-11-22
    • Volker BeckerFranz LaermerAndrea SchilpThomas Beck
    • Volker BeckerFranz LaermerAndrea SchilpThomas Beck
    • H01L2100
    • H01J37/321
    • A plasma processing system for etching a substrate using a highly dense plasma in a reactor. An ICP coil having a first coil end and a second coil end generating a high-frequency electromagnetic alternating field in the reactor which acts on a reactive gas and, as an inductively coupled plasma source, produces the highly dense plasma from reactive particles and ions. The two coil ends each communicate via a feed point with a high-frequency infeed, which applies in each case a high-frequency a.c. voltage of the same frequency to the first coil end and to the second coil end (21, 21′). The two high-frequency a.c. voltages applied at the two coil ends are connected to a symmetrical, capacitive network via a &lgr;2 -delay line linking the first feed point and the second feed point and are, at least nearly in phase opposition to one another, and have at least nearly the same amplitudes.
    • 一种用于在反应器中使用高密度等离子体蚀刻衬底的等离子体处理系统。 具有第一线圈端和第二线圈端的ICP线圈,其在反应器中产生作用于反应气体的高频电磁交变场,并且作为电感耦合等离子体源,从反应性粒子和离子产生高密度等离子体。 两个线圈端各自通过馈电点与高频电源进行通信,每种情况都适用于高频电源。 相同频率的电压到第一线圈端和第二线圈端(21,21')。 两个高频a.c. 施加在两个线圈端处的电压通过连接第一馈电点和第二馈电点的lambd2 - 线路连接到对称的电容网络,并且至少几乎相互相反地并且具有至少接近于 相同的幅度。