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51. 发明授权

US08077239B2 Solid-state image pickup device and camera 有权
标题翻译：固态图像拾取装置和相机
公开(公告)号：US08077239B2
公开(公告)日：2011-12-13
申请号：US12718257
申请日：2010-03-05
申请人： Shunsuke Inoue , Shin Kikuchi
发明人： Shunsuke Inoue , Shin Kikuchi
IPC分类号： H04N3/14 , H04N5/225 , H04N5/235 , H04N5/217
CPC分类号： H04N5/378 , H04N5/343 , H04N5/347
摘要： A solid-state image pickup device which has means of adding signals from plural pixels, which achieves a high S/N and a pickup device suitable for both static and moving image pickup. The device has a pixel unit having plural pixels arranged two-dimensionally and outputting pixel signals derived by photoelectric conversion, and has a first mode reading a pixel signal every pixel, and a second mode adding and reading a plurality of pixel signals, having a variable gain column amplifier for performing readout at different gains in the first mode and second mode. The device has plural output lines where signals from plural pixels arranged in one line are outputted respectively, and at least one amplifier is connected to each of the plurality of output lines. Gain at time of second mode readout is higher than gain at time of first mode readout.
摘要翻译：一种固态图像拾取装置，其具有添加来自多个像素的信号的装置，其实现了高S / N，以及适于静态和运动图像拾取的拾取装置。该装置具有像素单元，其具有二维布置的多个像素，并且输出通过光电转换导出的像素信号，并且具有每个像素读取像素信号的第一模式，以及添加和读取具有变量的多个像素信号的第二模式增益列放大器，用于在第一模式和第二模式下以不同增益执行读出。该装置具有多个输出线，其中分别输出排列成一行的多个像素的信号，并且至少一个放大器连接到多个输出线中的每一个。第二模式读出时的增益高于第一模式读出时的增益。

52. 发明授权

US07755118B2 Solid-state image pick-up device and imaging system using the same 失效
标题翻译：固态摄像装置及使用其的成像系统
公开(公告)号：US07755118B2
公开(公告)日：2010-07-13
申请号：US11833146
申请日：2007-08-02
申请人： Shunsuke Inoue
发明人： Shunsuke Inoue
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14601 , H01L21/28525 , H01L23/53271 , H01L27/14612 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a solid-state image pick-up device without shading in the dark state, and capable of making a dynamic range and a S/N high. Reference numeral 505 denotes an N-type cathode of a photodiode, 506 denoting a surface P-type region for forming the photodiode into an embedded structure, 508a denoting an N-type high concentration region which forms a floating diffusion and which is also a drain region of a transfer MOS transistor. Reference character 508b denotes a polysilicon lead-out electrode brought into direct contact with the N-type high concentration region. Light incident from the surface passes through an aperture without a metal third layer 525 to enter into the photodiode. Among incident lights, light reflected by the top surface of a gate electrode 504 of the transfer MOS transistor is reflected by a first layer metal 521 right above the polysilicon, so as to repeats reflection a plurality of times to attenuate sufficiently before entering into the floating diffusion section, thereby making the aliasing extremely small.
摘要翻译：本发明提供了一种固态图像拾取装置，其在黑暗状态下没有阴影，并且能够使动态范围和S / N高。附图标记505表示光电二极管的N型阴极，506表示用于将光电二极管形成嵌入结构的表面P型区域，508a表示形成浮动扩散的N型高浓度区域，也是漏极转移MOS晶体管的区域。附图标记508b表示与N型高浓度区域直接接触的多晶硅引出电极。从表面入射的光通过没有金属第三层525的孔径进入光电二极管。在入射光中，由转移MOS晶体管的栅电极504的上表面反射的光被多晶硅上方的第一层金属521反射，从而在进入浮置之前多次重复反射以充分衰减扩散部分，从而使得混叠非常小。

53. 发明授权

US07456453B2 Solid-state image sensing device 失效
标题翻译：固态摄像装置
公开(公告)号：US07456453B2
公开(公告)日：2008-11-25
申请号：US11448020
申请日：2006-06-07
申请人： Shunsuke Inoue
发明人： Shunsuke Inoue
IPC分类号： H01L31/062
CPC分类号： H01L27/14612 , H01L27/14623
摘要： A solid-state image sensing device has a pixel that includes a photodiode that generates an electrical charge according to an amount of incoming light, a floating diffusion portion, a charge transfer transistor that transfers the electrical charge to the floating diffusion portion from the photoelectric conversion portion, a reading circuit that outputs an signal on the basis of said electrical charge held in said floating diffusion portion, and a light-shielding member disposed so as to cover a side wall of a gate electrode of the charge transfer transistor on the photoelectric conversion portion side.
摘要翻译：固态摄像装置具有像素，该像素包括根据入射光量产生电荷的光电二极管，浮动扩散部分，电荷转移晶体管，其将电荷从光电转换传递到浮动扩散部分基于保持在所述浮动扩散部分中的所述电荷输出信号的读取电路和设置成在光电转换上覆盖电荷转移晶体管的栅电极的侧壁的遮光部件部分侧。

54. 发明授权

US07423305B2 Solid-state image sensing device having high sensitivity and camera system using the same 失效
标题翻译：具有高灵敏度的固态图像感测装置和使用其的相机系统
公开(公告)号：US07423305B2
公开(公告)日：2008-09-09
申请号：US11316868
申请日：2005-12-27
申请人： Mahito Shinohara , Shunsuke Inoue
发明人： Mahito Shinohara , Shunsuke Inoue
IPC分类号： H01L31/062
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14632 , H01L27/14643 , H01L27/14654 , H01L27/14656
摘要： A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first and second conductivity types are opposite to each other. The first transistor has a first-conductivity-type drain region formed in the second-conductivity-type semiconductor region to transfer signal charge to the drain region. The second transistor has a source region and a drain region which are formed in the second-conductivity-type semiconductor region and which have the first conductivity type. At least one second-conductivity-type potential barrier is provided under the drain region of the first transistor and the source region and/or the drain region of the second transistor.
摘要翻译：固态图像感测装置包括多个像素。每个像素具有光电二极管，第一晶体管和第二晶体管。光电二极管由第一导电型半导体区域和第二导电型半导体区域构成。第一和第二导电类型彼此相反。第一晶体管具有形成在第二导电型半导体区域中的第一导电型漏极区域，以将信号电荷转移到漏极区域。第二晶体管具有形成在第二导电型半导体区域中并且具有第一导电类型的源极区和漏极区。在第一晶体管的漏极区域和第二晶体管的源极区域和/或漏极区域的下方提供至少一个第二导电型势垒。

55. 发明授权

US07385172B2 Photoelectric conversion device having an insulation film on a reflection prevention film, and camera using such photoelectric conversion device 有权
标题翻译：在防反射膜上具有绝缘膜的光电转换装置，以及使用该光电转换装置的照相机
公开(公告)号：US07385172B2
公开(公告)日：2008-06-10
申请号：US11527485
申请日：2006-09-27
申请人： Shunsuke Inoue , Hiroshi Yuzurihara , Tetsuya Itano
发明人： Shunsuke Inoue , Hiroshi Yuzurihara , Tetsuya Itano
IPC分类号： H01L31/062 , H01J40/14
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1462
摘要： A photoelectric conversion device is provided, in which pixels are arranged in an array. Each of the pixels includes a light receiving region, transistors, and an insulation film. The insulation film is arranged on a surface of the light receiving region and under gate electrodes of the transistors. A reflection prevention film is arranged at least above the light receiving region, with the insulation film being arranged between the reflection prevention film and the light receiving region, and has a silicon nitride film. An interlayer insulation film is arranged on the reflection prevention film, and a second reflection prevention film is laminated between the reflection prevention film and the interlayer insulation film.
摘要翻译：提供了一种光电转换装置，其中像素被排列成阵列。每个像素包括光接收区域，晶体管和绝缘膜。绝缘膜布置在光接收区域的表面和晶体管的栅电极下方。至少在光接收区域的上方布置反射防止膜，绝缘膜设置在防反射膜和受光区之间，并且具有氮化硅膜。在防反射膜上设置层间绝缘膜，在防反射膜和层间绝缘膜之间层叠第二防反射膜。

56. 发明授权

US07126102B2 Photoelectric conversion device and camera using photoelectric conversion device 有权
标题翻译：光电转换装置及相机采用光电转换装置
公开(公告)号：US07126102B2
公开(公告)日：2006-10-24
申请号：US10747369
申请日：2003-12-30
申请人： Shunsuke Inoue , Hiroshi Yuzurihara , Tetsuya Itano
发明人： Shunsuke Inoue , Hiroshi Yuzurihara , Tetsuya Itano
IPC分类号： G01J1/44 , H01J40/14 , H03F3/08 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1462
摘要： A photoelectric conversion device has pixels arranged in an array. Each pixel includes a light receiving region for converting light to signal charges and an insulation film formed on a surface of the light receiving region. Each pixel further includes transistors, including an amplifying transistor for amplifying the signal charges. A reflection prevention film is provided that has a refractive index higher than that of the insulation film and is arranged above the light receiving region, with the insulation film disposed between the reflection prevention film and the light receiving region. Film thicknesses of the insulation film and gate insulation films of the transistors are different from each other.
摘要翻译：光电转换装置具有排列成阵列的像素。每个像素包括用于将光转换为信号电荷的光接收区域和形成在光接收区域的表面上的绝缘膜。每个像素还包括晶体管，其包括用于放大信号电荷的放大晶体管。提供了具有比绝缘膜高的折射率的反射防止膜，并且设置在光接收区域的上方，绝缘膜设置在防反射膜和受光区之间。晶体管的绝缘膜和栅极绝缘膜的膜厚度彼此不同。

57. 发明授权

US06971750B1 Projection display apparatus 失效
标题翻译：投影显示装置
公开(公告)号：US06971750B1
公开(公告)日：2005-12-06
申请号：US09472989
申请日：1999-12-28
申请人： Shunsuke Inoue , Osamu Hamamoto
发明人： Shunsuke Inoue , Osamu Hamamoto
IPC分类号： G03B21/10
CPC分类号： G03B21/10
摘要： A projection display apparatus includes a display panel provided with first electrodes, a circuit board provided with a drive circuit including second electrodes for driving the display panel, a projection lens support provided with a projection lens for projecting an enlarged image onto a screen, and a holder provided with a connector for the first and second electrodes and with a positioning device for the holder and the projection lens support. The first electrodes of the display panel and the second electrodes of the circuit board are electrically connected by the connector of the holder, respectively. The projection lens support is positionally aligned and connected with the holder by the positioning device for optical alignment of the projection lens.
摘要翻译：投影型显示装置具备：第一电极的显示面板，具备驱动显示面板的第二电极的驱动电路的电路基板;投影放大图像到投影仪的投影透镜支架;投影透镜支架，保持器设置有用于第一和第二电极的连接器以及用于保持器和投影透镜支架的定位装置。显示面板的第一电极和电路板的第二电极分别由保持器的连接器电连接。投影透镜支架通过用于投影透镜的光学对准的定位装置位置对准并与保持器连接。

58. 发明授权

US06885047B2 Solid-state image sensing device having pixels with barrier layer underneath transistor regions and camera using said device 失效
标题翻译：具有在晶体管区域下方具有阻挡层的像素和使用所述器件的相机的固态图像感测装置
公开(公告)号：US06885047B2
公开(公告)日：2005-04-26
申请号：US10463604
申请日：2003-06-18
申请人： Mahito Shinohara , Shunsuke Inoue
发明人： Mahito Shinohara , Shunsuke Inoue
IPC分类号： H01L27/146 , H04N5/335 , H04N5/369 , H04N5/374 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14632 , H01L27/14643 , H01L27/14654 , H01L27/14656
摘要： A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first and second conductivity types are opposite to each other. The first transistor has a first-conductivity-type drain region formed in the second-conductivity-type semiconductor region to transfer signal charge to the drain region. The second transistor has a source region and a drain region which are formed in the second-conductivity-type semiconductor region and which have the first conductivity type. At least one second-conductivity-type potential barrier is provided under the drain region of the first transistor and the source region and/or the drain region of the second transistor.
摘要翻译：固态图像感测装置包括多个像素。每个像素具有光电二极管，第一晶体管和第二晶体管。光电二极管由第一导电型半导体区域和第二导电型半导体区域构成。第一和第二导电类型彼此相反。第一晶体管具有形成在第二导电型半导体区域中的第一导电型漏极区域，以将信号电荷转移到漏极区域。第二晶体管具有形成在第二导电型半导体区域中并且具有第一导电类型的源极区和漏极区。在第一晶体管的漏极区域和第二晶体管的源极区域和/或漏极区域的下方提供至少一个第二导电型势垒。

59. 发明授权

US06313894B1 Liquid crystal display 失效
标题翻译：液晶显示器
公开(公告)号：US06313894B1
公开(公告)日：2001-11-06
申请号：US09038687
申请日：1998-03-09
申请人： Yasuhiro Sekine , Shunsuke Inoue , Hiroshi Mizuno
发明人： Yasuhiro Sekine , Shunsuke Inoue , Hiroshi Mizuno
IPC分类号： G02F11333
CPC分类号： G02F1/1334 , G02F2001/13345
摘要： This invention provides a liquid crystal display which comprises a first region including a display region, and a second region being outside the first region, wherein the first and second regions both contain liquid crystal in a polymer network, and a part of the polymer network of the second region is different in structure from the polymer network of the first region, and the part is present in the second region asymmetrically with respect to the first region, and a production method for a liquid crystal display, which comprises providing a liquid crystal material and a prepolymer material in a space between a pair of substrates at least one of which is transparent, and polymerizing the prepolymer material by scanning a first region including a display region and a second region outside the first region with a light beam which causes polymerization.
摘要翻译：本发明提供了一种液晶显示器，其包括包括显示区域的第一区域和位于第一区域外部的第二区域，其中第一和第二区域均包含聚合物网络中的液晶，以及聚合物网络的一部分所述第二区域的结构与所述第一区域的聚合物网络不同，并且所述部分相对于所述第一区域不对称地存在于所述第二区域中，以及液晶显示器的制造方法，其包括提供液晶材料以及预聚物材料，在一对基板之间的空间中，其中至少一个是透明的，并且通过用引起聚合的光束扫描包括显示区域和第一区域外的第二区域的第一区域来聚合预聚物材料。

60. 发明授权

US06191435B1 Semiconductor integrated circuit and liquid crystal display appratus 失效
标题翻译：半导体集成电路和液晶显示装置
公开(公告)号：US06191435B1
公开(公告)日：2001-02-20
申请号：US08612496
申请日：1996-03-07
申请人： Shunsuke Inoue
发明人： Shunsuke Inoue
IPC分类号： H01L2904
CPC分类号： G02F1/136277 , H01L27/1233 , H01L27/1237
摘要： Transistors (43, 44, 45) of an SOI type semiconductor integrated circuit or a liquid crystal display apparatus to which the SOI semiconductor integrated circuit is applied are prevented from leaking a current. A semiconductor region (41) is formed below at least some of a plurality of transistors through an insulating region 42, and changes in threshold value of the transistors (43, 44, 45) caused by a potential applied to the semiconductor region are adjusted. At this time, the transistors (43, 44, 45) have well potentials (45) fixed to a first potential in the circuit, and the semiconductor region is fixed to a second potential. A signal VSIG transferred from a source (43) to a drain (44) satisfies VDMIN≦VSIG≦VDMAX (VDMIN and VDMAX are the minimum and maximum values of the signal VSIG), and, depending on the conductivity types of the transistors (43, 44, 45), the signal VSIG is adjusted such a manner that the following conditions are satisfied: VDMIN>VSS+Vth+&Dgr;Vth (when an n-channel transistor is used) VDMAX
摘要翻译：防止SOI型半导体集成电路的晶体管（43,44,45）或其上施加有SOI半导体集成电路的液晶显示装置泄漏电流。半导体区域（41）通过绝缘区域42形成在多个晶体管中的至少一些晶体管的下方，并且调整由施加到半导体区域的电位引起的晶体管（43,44,45）的阈值变化。此时，晶体管（43,44,45）具有固定在电路中的第一电位的良好电位（45），半导体区域被固定为第二电位。从源极（43）传输到漏极（44）的信号VSIG满足VDMIN <= VSIG <= VDMAX（VDMIN和VDMAX是信号VSIG的最小值和最大值），并且取决于晶体管的导电类型（43,44,45），以满足以下条件的方式调整信号VSIG：VDMIN> VSS + Vth + DELTAVth（使用n沟道晶体管时）VDMAX

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