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1. 发明授权

US07709780B2 Photoelectric conversion device and camera using photoelectric conversion device 有权
标题翻译：光电转换装置及相机采用光电转换装置
公开(公告)号：US07709780B2
公开(公告)日：2010-05-04
申请号：US12111342
申请日：2008-04-29
申请人： Shunsuke Inoue , Hiroshi Yuzurihara , Tetsuya Itano
发明人： Shunsuke Inoue , Hiroshi Yuzurihara , Tetsuya Itano
IPC分类号： H01L31/00
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1462
摘要： A photoelectric conversion device is configured to include a light receiving region, for converting light to signal charges, and transistors. An insulation film is arranged on a surface of the light receiving region and under gate electrodes of the transistors. A first reflection prevention film of a refractive index higher than that of the insulation film is arranged at least above the light receiving region, to sandwich the insulation film between the first reflection prevention film and the light receiving region, and includes a silicon nitride film. An interlayer insulation film is arranged on the first reflection prevention film, and a second reflection prevention film is laminated between the first reflection prevention film and the interlayer insulation film. At least one of side walls of the gate electrodes of the transistors includes the silicon nitride film and a silicon oxide film arranged between the silicon nitride film and the gate electrodes. A transistor having a gate electrode with such a side wall includes a source or drain region of an LDD structure, in which a heavily doped region of the source or drain region of the LDD structure is self aligned to the side wall formed from the silicon nitride film and the silicon oxide film.
摘要翻译：光电转换装置被配置为包括用于将光转换为信号电荷的光接收区域和晶体管。绝缘膜布置在光接收区域的表面和晶体管的栅电极下方。折射率高于绝缘膜的第一防反射膜至少布置在光接收区域的上方，以将绝缘膜夹在第一防反射膜和受光区之间，并且包括氮化硅膜。在第一反射防止膜上设置层间绝缘膜，在第一防反射膜与层间绝缘膜之间层叠第二防反射膜。晶体管的栅电极的至少一个侧壁包括氮化硅膜和布置在氮化硅膜和栅电极之间的氧化硅膜。具有具有这种侧壁的栅电极的晶体管包括LDD结构的源极或漏极区域，其中LDD结构的源极或漏极区域的重掺杂区域与由氮化硅形成的侧壁自对准膜和氧化硅膜。

2. 发明申请

US20070018080A1 Photoelectric conversion device and camera using photoelectric conversion device 有权
标题翻译：光电转换装置及相机采用光电转换装置
公开(公告)号：US20070018080A1
公开(公告)日：2007-01-25
申请号：US11527485
申请日：2006-09-27
申请人： Shunsuke Inoue , Hiroshi Yuzurihara , Tetsuya Itano
发明人： Shunsuke Inoue , Hiroshi Yuzurihara , Tetsuya Itano
IPC分类号： H01J40/14 , H01L31/00
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1462
摘要： A photoelectric conversion device has pixels arranged in an array. Each pixel includes a light receiving region for converting light to signal charges and an insulation film formed on a surface of the light receiving region. Each pixel further includes transistors, including an amplifying transistor for amplifying the signal charges. A reflection prevention film is provided that has a refractive index higher than that of the insulation film and is arranged above the light receiving region, with the insulation film disposed between the reflection prevention film and the light receiving region. Film thicknesses of the insulation film and gate insulation films of the transistors are different from each other.
摘要翻译：光电转换装置具有排列成阵列的像素。每个像素包括用于将光转换为信号电荷的光接收区域和形成在光接收区域的表面上的绝缘膜。每个像素还包括晶体管，其包括用于放大信号电荷的放大晶体管。提供了具有比绝缘膜高的折射率的反射防止膜，并且设置在光接收区域的上方，绝缘膜设置在防反射膜和受光区之间。晶体管的绝缘膜和栅极绝缘膜的膜厚度彼此不同。

3. 发明申请

US20080230685A1 Photoelectric Conversion Device and Camera Using Photoelectric Conversion Device 有权
标题翻译：光电转换装置及相机使用光电转换装置
公开(公告)号：US20080230685A1
公开(公告)日：2008-09-25
申请号：US12111342
申请日：2008-04-29
申请人： Shunsuke Inoue , Hiroshi Yuzurihara , Tetsuya Itano
发明人： Shunsuke Inoue , Hiroshi Yuzurihara , Tetsuya Itano
IPC分类号： H01J40/14
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1462
摘要： A photoelectric conversion device is configured to include a light receiving region, for converting light to signal charges, and transistors. An insulation film is arranged on a surface of the light receiving region and under gate electrodes of the transistors. A first reflection prevention film of a refractive index higher than that of the insulation film is arranged at least above the light receiving region, to sandwich the insulation film between the first reflection prevention film and the light receiving region, and includes a silicon nitride film. An interlayer insulation film is arranged on the first reflection prevention film, and a second reflection prevention film is laminated between the first reflection prevention film and the interlayer insulation film. At least one of side walls of the gate electrodes of the transistors includes the silicon nitride film and a silicon oxide film arranged between the silicon nitride film and the gate electrodes. A transistor having a gate electrode with such a side wall includes a source or drain region of an LDD structure, in which a heavily doped region of the source or drain region of the LDD structure is self aligned to the side wall formed from the silicon nitride film and the silicon oxide film.
摘要翻译：光电转换装置被配置为包括用于将光转换为信号电荷的光接收区域和晶体管。绝缘膜布置在光接收区域的表面和晶体管的栅电极下方。折射率高于绝缘膜的第一防反射膜至少布置在光接收区域的上方，以将绝缘膜夹在第一防反射膜和受光区之间，并且包括氮化硅膜。在第一反射防止膜上设置层间绝缘膜，在第一防反射膜与层间绝缘膜之间层叠第二防反射膜。晶体管的栅电极的至少一个侧壁包括氮化硅膜和布置在氮化硅膜和栅电极之间的氧化硅膜。具有具有这种侧壁的栅电极的晶体管包括LDD结构的源极或漏极区域，其中LDD结构的源极或漏极区域的重掺杂区域与由氮化硅形成的侧壁自对准膜和氧化硅膜。

4. 发明授权

US07385172B2 Photoelectric conversion device having an insulation film on a reflection prevention film, and camera using such photoelectric conversion device 有权
标题翻译：在防反射膜上具有绝缘膜的光电转换装置，以及使用该光电转换装置的照相机
公开(公告)号：US07385172B2
公开(公告)日：2008-06-10
申请号：US11527485
申请日：2006-09-27
申请人： Shunsuke Inoue , Hiroshi Yuzurihara , Tetsuya Itano
发明人： Shunsuke Inoue , Hiroshi Yuzurihara , Tetsuya Itano
IPC分类号： H01L31/062 , H01J40/14
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1462
摘要： A photoelectric conversion device is provided, in which pixels are arranged in an array. Each of the pixels includes a light receiving region, transistors, and an insulation film. The insulation film is arranged on a surface of the light receiving region and under gate electrodes of the transistors. A reflection prevention film is arranged at least above the light receiving region, with the insulation film being arranged between the reflection prevention film and the light receiving region, and has a silicon nitride film. An interlayer insulation film is arranged on the reflection prevention film, and a second reflection prevention film is laminated between the reflection prevention film and the interlayer insulation film.
摘要翻译：提供了一种光电转换装置，其中像素被排列成阵列。每个像素包括光接收区域，晶体管和绝缘膜。绝缘膜布置在光接收区域的表面和晶体管的栅电极下方。至少在光接收区域的上方布置反射防止膜，绝缘膜设置在防反射膜和受光区之间，并且具有氮化硅膜。在防反射膜上设置层间绝缘膜，在防反射膜和层间绝缘膜之间层叠第二防反射膜。

5. 发明授权

US07126102B2 Photoelectric conversion device and camera using photoelectric conversion device 有权
标题翻译：光电转换装置及相机采用光电转换装置
公开(公告)号：US07126102B2
公开(公告)日：2006-10-24
申请号：US10747369
申请日：2003-12-30
申请人： Shunsuke Inoue , Hiroshi Yuzurihara , Tetsuya Itano
发明人： Shunsuke Inoue , Hiroshi Yuzurihara , Tetsuya Itano
IPC分类号： G01J1/44 , H01J40/14 , H03F3/08 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1462
摘要： A photoelectric conversion device has pixels arranged in an array. Each pixel includes a light receiving region for converting light to signal charges and an insulation film formed on a surface of the light receiving region. Each pixel further includes transistors, including an amplifying transistor for amplifying the signal charges. A reflection prevention film is provided that has a refractive index higher than that of the insulation film and is arranged above the light receiving region, with the insulation film disposed between the reflection prevention film and the light receiving region. Film thicknesses of the insulation film and gate insulation films of the transistors are different from each other.
摘要翻译：光电转换装置具有排列成阵列的像素。每个像素包括用于将光转换为信号电荷的光接收区域和形成在光接收区域的表面上的绝缘膜。每个像素还包括晶体管，其包括用于放大信号电荷的放大晶体管。提供了具有比绝缘膜高的折射率的反射防止膜，并且设置在光接收区域的上方，绝缘膜设置在防反射膜和受光区之间。晶体管的绝缘膜和栅极绝缘膜的膜厚度彼此不同。

6. 发明授权

US09307174B2 Solid-state imaging apparatus using counter to count a clock signal at start of change in level of a reference signal 有权
标题翻译：使用计数器的固态成像装置在参考信号的电平变化开始时对时钟信号进行计数
公开(公告)号：US09307174B2
公开(公告)日：2016-04-05
申请号：US13610440
申请日：2012-09-11
申请人： Tetsuya Itano , Hiroki Hiyama , Kazuhiro Saito , Kohichi Nakamura , Yu Maehashi
发明人： Tetsuya Itano , Hiroki Hiyama , Kazuhiro Saito , Kohichi Nakamura , Yu Maehashi
IPC分类号： H04N5/3745 , H04N5/378 , H04N5/374
CPC分类号： H04N5/378 , H04N5/3742
摘要： A solid-state imaging apparatus includes a plurality of pixels arrayed in a matrix, and configured to generate signals by photoelectric conversion; a plurality of read-out circuits disposed on each column of the plurality of pixels arrayed in a matrix pattern, and configured to read out the signals from the plurality of pixels; a plurality of comparison units configured to compare the signals output from the plurality of read-out circuits with a reference signal whose level changes with time; a counter configured to count a clock signal after the level of the reference signal starts a change; a storage unit configured, when a magnitude relationship between the signals output from the plurality of the read-out circuits and the reference signal is reversed; and a reset unit configured to reset the count value stored in the storage unit.
摘要翻译：固态成像装置包括以矩阵排列的多个像素，并且被配置为通过光电转换产生信号; 多个读出电路，设置在以矩阵图案排列的多个像素的每列上，并且被配置为从多个像素读出信号; 多个比较单元，被配置为将从多个读出电路输出的信号与其电平随时间变化的参考信号进行比较; 配置为在参考信号的电平开始变化之后对时钟信号进行计数的计数器; 存储单元，当从所述多个读出电路输出的信号与所述参考信号之间的大小关系被反转时，以及复位单元，被配置为重置存储在存储单元中的计数值。

7. 发明授权

US08963271B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08963271B2
公开(公告)日：2015-02-24
申请号：US13823057
申请日：2011-09-20
申请人： Kazuo Yamazaki , Tetsuya Itano , Nobuyuki Endo , Kyouhei Watanabe
发明人： Kazuo Yamazaki , Tetsuya Itano , Nobuyuki Endo , Kyouhei Watanabe
IPC分类号： H01L27/146 , H04N5/235 , H04N5/355 , H04N5/3745
CPC分类号： H01L27/14623 , H01L27/14607 , H01L27/1463 , H01L27/14634 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/148 , H04N5/3559 , H04N5/372 , H04N5/37452 , H04N5/37455 , H04N5/378
摘要： In a solid-state imaging device, a photoelectric conversion unit, a transfer transistor, and at least a part of electric charge holding unit, among pixel constituent elements, are disposed on a first semiconductor substrate. An amplifying transistor, a signal processing circuit other than a reset transistor, and a plurality of common output lines, to which signals are read out from a plurality of pixels, are disposed on a second semiconductor substrate.
摘要翻译：在固态成像装置中，在像素构成要素中设置有光电转换单元，转印晶体管和电荷保持单元的至少一部分，在第一半导体基板上。放大晶体管，复位晶体管以外的信号处理电路以及从多个像素读出信号的多个公共输出线配置在第二半导体基板上。

8. 发明授权

US08912578B2 Solid-state image pickup device and image pickup system 有权
标题翻译：固态图像拾取装置和图像拾取系统
公开(公告)号：US08912578B2
公开(公告)日：2014-12-16
申请号：US13517357
申请日：2010-12-22
申请人： Nobuyuki Endo , Tetsuya Itano , Kazuo Yamazaki , Kyouhei Watanabe , Takeshi Ichikawa
发明人： Nobuyuki Endo , Tetsuya Itano , Kazuo Yamazaki , Kyouhei Watanabe , Takeshi Ichikawa
IPC分类号： H01L27/148 , H01L27/146
CPC分类号： H01L27/14636 , H01L27/14632 , H01L27/14643 , H01L27/1465
摘要： The present invention relates to a solid-state image pickup device. The device includes a first substrate including a photoelectric conversion element and a transfer gate electrode configured to transfer charge from the photoelectric conversion element, a second substrate having a peripheral circuit portion including a circuit configured to read a signal based charge generated in the photoelectric conversion element, the first and second substrates being laminated. The device further includes a multilayer interconnect structure, disposed on the first substrate, including an aluminum interconnect and a multilayer interconnect structure, disposed on the second substrate, including a copper interconnect.
摘要翻译：本发明涉及一种固态图像拾取装置。该装置包括：第一基板，包括光电转换元件和被配置为从光电转换元件传送电荷的转移栅电极;第二基板，具有外围电路部分，其包括被配置为读取在光电转换元件中产生的基于信号的电荷第一和第二基板被层压。该器件还包括多层互连结构，其设置在第一衬底上，包括铝互连和多层互连结构，设置在第二衬底上，包括铜互连。

9. 发明授权

US08711259B2 Solid-state imaging apparatus 有权
标题翻译：固态成像装置
公开(公告)号：US08711259B2
公开(公告)日：2014-04-29
申请号：US13614121
申请日：2012-09-13
申请人： Yu Maehashi , Hiroki Hiyama , Tetsuya Itano , Kazuhiro Saito , Kohichi Nakamura
发明人： Yu Maehashi , Hiroki Hiyama , Tetsuya Itano , Kazuhiro Saito , Kohichi Nakamura
IPC分类号： H04N9/083 , H04N3/14 , H03K5/153
CPC分类号： H03F3/45475 , H03F2200/78 , H03F2203/45512 , H03F2203/45544
摘要： A solid-state imaging apparatus includes: an amplifier circuit configured to amplify a signal from pixel; and a reference signal generating circuit configured to generate a ramp signal, wherein feedback capacitor elements having the same structure are electrically connected to a capacitive feedback type amplifier of the amplifier circuit and to a capacitive feedback type amplifier of the reference signal generating circuit respectively, and a connecting configuration between an amplifier of the amplifier circuit and the feedback capacitor element and a connecting configuration between an amplifier of the reference signal generating circuit and the feedback capacitor element are the same.
摘要翻译：固态成像装置包括：放大器电路，被配置为放大来自像素的信号; 以及参考信号发生电路，被配置为产生斜坡信号，其中具有相同结构的反馈电容器元件分别电连接到放大器电路的电容反馈型放大器和参考信号发生电路的电容反馈型放大器，以及放大器电路的放大器和反馈电容器元件之间的连接配置以及参考信号发生电路的放大器与反馈电容器元件之间的连接配置是相同的。

10. 发明申请

US20130175652A1 SOLID-STATE IMAGING DEVICE 有权
公开(公告)号：US20130175652A1
公开(公告)日：2013-07-11
申请号：US13823057
申请日：2011-09-20
申请人： Kazuo Yamazaki , Tetsuya Itano , Nobuyuki Endo , Kyouhei Watanabe
发明人： Kazuo Yamazaki , Tetsuya Itano , Nobuyuki Endo , Kyouhei Watanabe
IPC分类号： H01L27/146
CPC分类号： H01L27/14623 , H01L27/14607 , H01L27/1463 , H01L27/14634 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/148 , H04N5/3559 , H04N5/372 , H04N5/37452 , H04N5/37455 , H04N5/378
摘要： In a solid-state imaging device, a photoelectric conversion unit, a transfer transistor, and at least a part of electric charge holding unit, among pixel constituent elements, are disposed on a first semiconductor substrate. An amplifying transistor, a signal processing circuit other than a reset transistor, and a plurality of common output lines, to which signals are read out from a plurality of pixels, are disposed on a second semiconductor substrate.

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