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51. 发明授权

US07945801B2 Semiconductor integrated circuit 有权
标题翻译：半导体集成电路
公开(公告)号：US07945801B2
公开(公告)日：2011-05-17
申请号：US12169853
申请日：2008-07-09
申请人： Shigezumi Matsui , Takashi Sato , Kazuyuki Sakata , Tsuyoshi Yaguchi , Kenzo Kuwabara , Atsushi Nakamura , Motoo Suwa , Ryoichi Sano , Hisashi Shiota
发明人： Shigezumi Matsui , Takashi Sato , Kazuyuki Sakata , Tsuyoshi Yaguchi , Kenzo Kuwabara , Atsushi Nakamura , Motoo Suwa , Ryoichi Sano , Hisashi Shiota
IPC分类号： H04L7/00
CPC分类号： G06F13/4243 , G06F13/1689
摘要： A memory interface circuit is connectable to a DDR-SDRAM which outputs read data in synchronization with a data strobe signal together with the data strobe signal. A clock generator generates internal clock signals and memory clock signals supplied to the DDR-SDRAM. The memory interface circuit determines a delay of arrival of the data strobe signal relative to the corresponding internal clock signal by using a data strobe signal inputted in a read cycle with respect to the DDR-SDRAM, samples the arrived read data, based on a signal obtained by shifting the phase of the arrived data strobe signal, and synchronizes the sampled read data to the corresponding internal clock signal on the basis of the result of determination of the arrival delay.
摘要翻译：存储器接口电路可连接到DDR-SDRAM，其与数据选通信号一起与数据选通信号一起输出读取数据。时钟发生器产生提供给DDR-SDRAM的内部时钟信号和存储器时钟信号。存储器接口电路通过使用相对于DDR-SDRAM在读周期中输入的数据选通信号，相对于相应的内部时钟信号确定数据选通信号的到达延迟，基于信号对所读取的数据进行采样通过移位到达数据选通信号的相位来获得，并且基于到达延迟的确定结果将采样的读取数据与相应的内部时钟信号同步。

52. 发明申请

US20110104437A1 VAPOR DEPOSITION FILM 审中-公开
标题翻译：蒸气沉积膜
公开(公告)号：US20110104437A1
公开(公告)日：2011-05-05
申请号：US12995564
申请日：2009-06-12
申请人： Gouhei Yamamura , Saori Sumi , Masahiro Kimura , Shunsuke Abe , Takashi Sato , Hiroyuki Sato , Junichi Masuda , Hiroshi Shinnumadate
发明人： Gouhei Yamamura , Saori Sumi , Masahiro Kimura , Shunsuke Abe , Takashi Sato , Hiroyuki Sato , Junichi Masuda , Hiroshi Shinnumadate
IPC分类号： B32B3/10
CPC分类号： C23C14/20 , Y10T428/24355
摘要： A vapor deposition film has a vapor deposition layer composed of a metal or an inorganic oxide formed on at least one side of a resin layer (A) which is composed of a resin composition (1). The resin composition (1) is a polyglycol acid containing not less than 70% by mole of a specific structure (a structure represented by formula (1)) as a repeating unit. The surface on which the vapor deposition layer is deposited has a center line average roughness of 5-50 nm. The vapor deposition film has excellent gas barrier properties, excellent workability and decomposition resistance sufficient for practical use.
摘要翻译：蒸镀膜具有由树脂组合物（1）构成的树脂层（A）的至少一面上形成的金属或无机氧化物构成的气相沉积层。树脂组合物（1）是作为重复单元的特定结构（式（1）所示的结构）不低于70摩尔％的聚乙二醇。沉积有蒸镀层的表面的中心线平均粗糙度为5-50nm。气相沉积膜具有优异的阻气性，优异的可加工性和耐分解性足以实际应用。

53. 发明申请

US20110077289A1 METHOD OF TREATING PNEUMOCONIOSIS WITH OLIGODEOXYNUCLEOTIDES 有权
标题翻译：用寡核苷酸处理肺炎的方法
公开(公告)号：US20110077289A1
公开(公告)日：2011-03-31
申请号：US12993809
申请日：2009-05-20
申请人： Dennis M. Klinman , Takashi Sato
发明人： Dennis M. Klinman , Takashi Sato
IPC分类号： A61K31/7088 , A61P11/00 , A61P31/00 , A61P29/00 , A61P11/10 , A61P11/08 , A61P43/00
CPC分类号： A61K31/7088
摘要： Methods are disclosed for treating, preventing or reducing the risk of developing occupational lung diseases, such as pneumoconiosis. In several embodiments, the methods include administering a therapeutically effective amount of the suppressive ODN to a subject having or at risk of developing a pneumoconiosis, thereby treating or inhibiting the pneumoconiosis. In several examples, thee subject can have or be at risk of developing silicosis, asbestosis or berryliosis. The method can include selecting a subject exposed to, or at risk of exposure to, inorganic particles, including, but not limited to silica, asbestos, berrylium, coal dust, or bauxite.
摘要翻译：公开了治疗，预防或降低发展职业性肺部疾病如肺尘埃沉着病的风险的方法。在几个实施方案中，所述方法包括向具有或具有发生肺尘埃沉着病风险的受试者施用治疗有效量的抑制性ODN，从而治疗或抑制肺尘埃沉着病。在几个例子中，您的受试者可能有或有发生矽肺，石棉沉滞症或bellyliosis的风险。该方法可以包括选择暴露于或有暴露于无机颗粒的风险的对象，包括但不限于二氧化硅，石棉，铍，煤粉或铝土矿。

54. 发明申请

US20110009868A1 Apparatus for preoperative planning of artificial knee joint replacement operation and jig for supporting operation 有权
标题翻译：人工膝关节置换手术术前规划设备及支撑手术夹具
公开(公告)号：US20110009868A1
公开(公告)日：2011-01-13
申请号：US12661980
申请日：2010-03-26
申请人： Takashi Sato
发明人： Takashi Sato
IPC分类号： A61B17/56 , G06K9/00
CPC分类号： A61B17/1764 , A61B17/155 , A61B17/72 , A61B34/10 , A61B34/25 , A61B2034/101 , A61B2034/105 , A61B2034/108 , G06T7/97 , G06T11/006 , G06T2207/10081 , G06T2207/10088 , G06T2207/30008 , G06T2211/40
摘要： Steps S101 and S102 of displaying images which input two-dimensional tomographic images of the lower limb including the knee joint and displays three-dimensional images of the femur and the tibia including the knee joint from the image input, steps S103 to S105 and S106 to S108 of determining artificial joint which determine the artificial joint to be replaced from the three-dimensional images of each knee joint of the femur and tibia, and steps S113 and S114 of parameter determination which determine various parameters used in an artificial knee joint replacement operation using an alignment rod in the marrow to be inserted into the femur based on the artificial joint and reference points of the knee joint determined in steps S103 to S105 of determining femur side artificial joint are performed by a computer.
摘要翻译：显示输入包括膝关节的下肢的二维断层图像的图像的步骤S101和S102，从图像输入显示包括膝关节的股骨和胫骨的三维图像，步骤S103至S105和S106，以确定从股骨和胫骨的每个膝关节的三维图像中确定要替换的人造关节的人造关节的S108以及确定在人造膝关节置换操作中使用的各种参数的参数确定的步骤S113和S114 基于人造关节将骨髓中的对准杆插入股骨中，通过计算机进行确定股骨侧人造关节的步骤S103至S105中确定的膝关节的参考点。

55. 发明申请

US20100308944A1 ELECTROMAGNETIC CONTACTOR 有权
标题翻译：电磁接触器
公开(公告)号：US20100308944A1
公开(公告)日：2010-12-09
申请号：US12691759
申请日：2010-01-22
申请人： Jun KURASHIGE , Takashi Sato , Katsuhiko Shiraishi
发明人： Jun KURASHIGE , Takashi Sato , Katsuhiko Shiraishi
IPC分类号： H01H50/00 , H01H9/02
CPC分类号： H01H50/305
摘要： The present invention is to provide an electromagnetic contactor in which the collision velocity of both of a movable core and a fixed core is effectively reduced to improve mechanical endurance of an electromagnet.The combined load of a buffer spring before actuation is set smaller than that of a retracting spring and a contact spring in a conduction state, so that the fixed core is actively moved towards the movable core side when being actuated by an electromagnetic coil, and a relative collision velocity can be accordingly decreased, thus improving mechanical endurance of the movable core and the fixed core.
摘要翻译：本发明提供一种电磁接触器，其中有效地减小了可动铁芯和固定铁芯两者的碰撞速度，以提高电磁铁的机械耐久性。驱动前的缓冲弹簧的组合载荷被设定为小于处于导通状态的缩回弹簧和接触弹簧的组合载荷，使得当由电磁线圈致动时，固定芯主动地朝向可动铁芯侧移动，并且可以相应地减小相对碰撞速度，从而提高可动铁心和固定铁芯的机械耐久性。

56. 发明授权

US07837784B2 High-chroma C.I. Pigment Red 254 and process for producing the same 有权
标题翻译：高色度C.I. 颜料红254及其制备方法
公开(公告)号：US07837784B2
公开(公告)日：2010-11-23
申请号：US12309413
申请日：2007-07-11
申请人： Hirotsugu Nemoto , Shousaburou Tanaka , Takashi Sato
发明人： Hirotsugu Nemoto , Shousaburou Tanaka , Takashi Sato
IPC分类号： C09B67/10 , C09B67/20 , C09B57/00
CPC分类号： C09B67/003 , C09B57/004 , C09B67/0014
摘要： The present invention relates to C. I. Pigment Red 254 for coloring, which can color an object to be colored so as to have a higher chroma than that with conventional technology and a production method for easily producing it. For the purpose, the inventors provide the production method for the pigment, wherein the intersection of mass tone ΔH* and ΔC* of a color coating film in an acrylic-melamine coating test is, on X-Y coordinate plane to which the ΔH* is defined as the X-axis and the ΔC* is defined as the Y-axis, within the surrounded region determined by specific three equations; and a production method for the pigment provides the production method of the pigment, including a process of heating crude pigment at 100-130° C. for 2-10 hours in an aprotic polar organic solvent which is strongly alkaline.
摘要翻译：本发明涉及用于着色的C.I.颜料红254，其可以使待着色的物体着色以具有比常规技术更高的色度和用于容易地生产它的制备方法。为此，本发明人提供了用于颜料的制造方法，其中丙烯酸 - 三聚氰胺涂层试验中彩色涂膜的质量色调＆amp; H *和＆Dgr; C *在XY坐标平面上，＆Dgr; H *被定义为X轴，并且＆Dgr; C *被定义为在由特定三个方程确定的包围区域内的Y轴; 并且颜料的制备方法提供了颜料的制备方法，包括在强碱性的非质子极性有机溶剂中在100-130℃下加热粗颜料2-10小时的方法。

57. 发明授权

US07830011B2 Semiconductor element and wafer level chip size package therefor 有权
标题翻译：半导体元件和晶圆级芯片尺寸封装
公开(公告)号：US07830011B2
公开(公告)日：2010-11-09
申请号：US11076055
申请日：2005-03-10
申请人： Kentaro Nomoto , Yuki Igawa , Hiroshi Saitoh , Takashi Sato , Toshio Ohashi , Yoshihiro Ohkura
发明人： Kentaro Nomoto , Yuki Igawa , Hiroshi Saitoh , Takashi Sato , Toshio Ohashi , Yoshihiro Ohkura
IPC分类号： H01L23/48
CPC分类号： H01L24/17 , H01L23/12 , H01L23/34 , H01L23/48 , H01L23/50 , H01L23/52 , H01L2224/02377 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05171 , H01L2224/05548 , H01L2224/05556 , H01L2224/05559 , H01L2224/05569 , H01L2224/05571 , H01L2224/05624 , H01L2224/05647 , H01L2224/13 , H01L2224/13022 , H01L2224/13023 , H01L2224/131 , H01L2224/14132 , H01L2224/16238 , H01L2224/81122 , H01L2224/8113 , H01L2224/81132 , H01L2924/00011 , H01L2924/01066 , H01L2924/01067 , H01L2924/01068 , H01L2924/01322 , H01L2924/10158 , H01L2924/12042 , H01L2924/14 , H01L2924/181 , H01L2924/351 , H01L2924/00 , H01L2924/014 , H01L2924/00012 , H01L2224/81805 , H01L2924/00014
摘要： A semiconductor device, encapsulated in a wafer level chip size package (WLCSP), includes a plurality of pad electrodes formed on the surface of a semiconductor chip, wherein a first insulating layer is formed on the surface of the semiconductor chip except the pad electrodes; a plurality of connection electrodes and at least one heat-dissipation electrode are formed on the surface of the first insulating layer; the pad electrodes and the connection electrodes are mutually connected via a first wiring portion; the heat-dissipation electrode is connected with a second wiring portion; and a second insulating layer is formed to enclose the electrodes and wiring portions, wherein the second wiring portion is arranged in proximity to a heating portion of the semiconductor chip and is formed on the surface of the first insulating layer except the prescribed region corresponding to the first wiring portion.
摘要翻译：封装在晶片级芯片尺寸封装（WLCSP）中的半导体器件包括形成在半导体芯片的表面上的多个焊盘电极，其中在除了焊盘电极之外的半导体芯片的表面上形成第一绝缘层; 多个连接电极和至少一个散热电极形成在第一绝缘层的表面上; 焊盘电极和连接电极经由第一布线部分相互连接; 所述散热电极与第二配线部连接，并且形成第二绝缘层以包围所述电极和布线部分，其中所述第二布线部分布置在所述半导体芯片的加热部分附近，并且形成在除了对应于所述半导体芯片的规定区域之外的所述第一绝缘层的表面上第一接线部。

58. 发明申请

US20100259674A1 SIGNAL PROCESSING APPARATUS, SIGNAL PROCESSING METHOD, AND PROGRAM 失效
标题翻译：信号处理装置，信号处理方法和程序
公开(公告)号：US20100259674A1
公开(公告)日：2010-10-14
申请号：US12750761
申请日：2010-03-31
申请人： Tsutomu Ichinose , Takashi Sato
发明人： Tsutomu Ichinose , Takashi Sato
IPC分类号： H04N7/01
CPC分类号： G06T5/009 , G06T2207/10016 , G06T2207/10024 , G11B2220/2541
摘要： A signal processing apparatus includes a lower-level region data detecting section detecting, in luminance data of an input video signal, luminance data corresponding to a value in a set lower-level region, and a data converting section converting a value of the luminance data corresponding to the lower-level region to a set conversion value.
摘要翻译：一种信号处理装置，包括：下位区域数据检测部分，检测输入视频信号的亮度数据，对应于设定的较低级别区域中的值的亮度数据;以及数据转换部分，将亮度数据的值对应于较低级别的区域设定转换值。

59. 发明申请

US20100251022A1 INTEGRATED CIRCUIT, DEBUGGING CIRCUIT, AND DEBUGGING COMMAND CONTROL METHOD 有权
标题翻译：集成电路，调试电路和调试命令控制方法
公开(公告)号：US20100251022A1
公开(公告)日：2010-09-30
申请号：US12729864
申请日：2010-03-23
申请人： Shuhei SATO , Takashi Sato
发明人： Shuhei SATO , Takashi Sato
IPC分类号： G06F11/27
CPC分类号： G06F13/28 , G06F11/362 , G06F11/3648
摘要： An integrated circuit includes a bus; a processing unit configured to execute a user program; and a debugging circuit connected to the bus, the debugging circuit transferring a command in a command register to the processing unit via the bus in response to a command transfer request from the processing unit, wherein, when the processing unit halts the execution of the user program and makes a request for the command transfer request to the debugging circuit, the debugging circuit makes a response for freeing the use right of the bus from the processing unit in a period between the command transfer request and the command transfer operation.
摘要翻译：集成电路包括总线; 处理单元，被配置为执行用户程序; 以及连接到所述总线的调试电路，所述调试电路响应于来自所述处理单元的命令传送请求，经由所述总线将命令寄存器中的命令传送到所述处理单元，其中，当所述处理单元停止所述用户的执行时程序并向调试电路请求命令传送请求，调试电路在命令传送请求和命令传送操作之间的时间段内对处理单元释放总线的使用权进行响应。

60. 发明授权

US07803502B2 Photomask and method of manufacturing semiconductor device using the photomask 失效
标题翻译：光掩模和使用光掩模制造半导体器件的方法
公开(公告)号：US07803502B2
公开(公告)日：2010-09-28
申请号：US11819104
申请日：2007-06-25
申请人： Takashi Sato , Kazuya Fukuhara
发明人： Takashi Sato , Kazuya Fukuhara
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F7/70283 , G03F7/70566
摘要： A photomask includes a mask substrate to be irradiated with irradiation light, and first and second phase shifters arranged on the mask substrate. The first phase shifter is arranged on the mask substrate with a first pitch not larger than eight times the wavelength of the irradiation light, has a transmittance of not more than 5% for the irradiation light, and phase-shifts the irradiation light by 180°. The second phase shifter is arranged on the mask substrate with a second pitch larger than eight times the wavelength, has a transmittance of not more than 5%, and phase-shifts the irradiation light by 180°.
摘要翻译：光掩模包括用照射光照射的掩模基板，以及布置在掩模基板上的第一和第二移相器。第一移相器以不大于照射光的八倍的第一音调布置在掩模基板上，对于照射光具有不大于5％的透射率，并将照射光相移180° 。第二移相器布置在掩模基板上，第二间距大于波长的八倍，透射率不大于5％，并将照射光相移180°。

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