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    • 52. 发明授权
    • Optical filter for visual display terminals
    • 用于可视显示终端的可调式环绕式滤光片
    • US5754259A
    • 1998-05-19
    • US605012
    • 1996-02-28
    • Osamu NakamatsuHiroshi Matsumoto
    • Osamu NakamatsuHiroshi Matsumoto
    • H04N5/65H04N5/72A47F5/00G02B27/00
    • H04N5/65H04N5/72Y10S248/918Y10S248/924
    • The present invention relates to an optical filter for visual display terminals, comprising a filter proper with a shape corresponding to a screen of the visual display terminal to have the filter mounted, and a frame for holding the filter proper, and can be mounted onto visual display terminals irrespective of the kind thereof, without giving any feeling of incompatibility. In the optical filter, the frame comprises a frame proper with a predetermined depth and a front shape corresponding to the main body of the visual display terminal, for holding the filter proper, and side frame members connected to be able to be horizontally adjusted in relative position against the frame proper. Also in the optical filter, the frame comprising a front frame with a shape corresponding to the main body of the visual display terminal, a top plate and side plates connected to the front frame tiltably at any optional positions, and corner members for connecting the top plate with the side plates.
    • PCT No.PCT / JP95 / 01429 Sec。 371日期1996年2月28日 102(e)日期1996年2月28日PCT提交1995年7月18日PCT公布。 公开号WO96 / 03834 日期:1996年02月8日本发明涉及一种视觉显示终端用滤光器,其特征在于,具有与所述可视显示终端的屏幕对应的形状的滤光片,以安装所述滤光片,以及用于保持所述滤光片的框架,以及 可以安装在视觉显示终端上,而不管其类型如何,而不产生不兼容的感觉。 在滤光器中,框架包括具有预定深度的框架和与视觉显示终端的主体相对应的前部形状,用于保持过滤器本身,并且连接成能够相对于水平调节的侧框架构件 对框架的位置适当。 同样在滤光器中,框架包括具有对应于视觉显示终端的主体的形状的前框架,顶板和在任何可选位置可倾斜地连接到前框架的侧板,以及用于连接顶部的角部件 板与侧板。
    • 54. 发明授权
    • Method for erasing remaining radiation image and device
    • 擦除剩余辐射图像和设备的方法
    • US5550386A
    • 1996-08-27
    • US409680
    • 1995-03-23
    • Yasushi KojimaHiroshi Matsumoto
    • Yasushi KojimaHiroshi Matsumoto
    • A61B6/00G03B42/02G03C5/17G01N23/04
    • G03C5/17Y10S430/168
    • Disclosed is an improvement of a method for erasing a radiation image remaining in a stimulable phosphor sheet which has stored a radiation image and has been irradiated with stimulating rays to read the radiation image. The improvement comprises a first erasing step of irradiating the phosphor sheet with a first erasing light containing a light portion of wavelength in ultraviolet region; and a second erasing step of irradiating the phosphor sheet with a second erasing light containing no light portion of wavelength in ultraviolet region, said second erasing light and said first erasing light being employed in a ratio of amount of light in the range of 15/85 to 45/55. Devices for erasing radiation image appropriately employable in the above-mentioned method are also disclosed.
    • 公开了一种擦除残留在可刺激的荧光粉片中的辐射图像的方法的改进,该激光荧光片已经存储了放射线图像并且已经用刺激光线照射以读取放射线图像。 该改进包括:第一擦除步骤,用包含紫外区域中的波长的一部分的第一擦除光照射荧光体片; 以及第二擦除步骤,用在紫外线区域中不含有波长的部分的第二擦除光照射荧光体片,所述第二擦除光和所述第一擦除光以15/85的范围内的光的比例使用 至45/55。 还公开了用于擦除在上述方法中适当使用的辐射图像的装置。
    • 58. 发明授权
    • Thin film transistor device having driving circuit and matrix circuit
    • 具有驱动电路和矩阵电路的薄膜晶体管器件
    • US5396084A
    • 1995-03-07
    • US70724
    • 1993-06-02
    • Hiroshi Matsumoto
    • Hiroshi Matsumoto
    • G02F1/136G02F1/1368H01L21/336H01L27/12H01L29/78H01L29/786H01L29/04H01L27/01H01L29/76
    • H01L27/1237H01L27/1214H01L29/4908Y10S438/981
    • A thin film semiconductor device comprises a matrix circuit portion and a peripheral circuit portion. An NMOS thin film transistor included in the peripheral circuit portion comprises as an active layer a polysilicon thin film formed on a substrate, leading to a high on-current and an improved switching speed, compared with a thin film transistor including as an active layer of a polysilicon thin film which is obtained by crystallizing an amorphous silicon thin film. An NMOS thin film transistor included in the matrix circuit portion also comprises as an active layer a polysilicon thin film which is formed on the substrate. However, the gate insulating film of an NMOS thin film transistor in the matrix circuit portion as a whole is made thicker than that in the NMOS thin film transistor included in the peripheral circuit portion because of the presence of a first interlayer insulating film.
    • 薄膜半导体器件包括矩阵电路部分和外围电路部分。 包括在外围电路部分中的NMOS薄膜晶体管与包括作为有源层的有源层的薄膜晶体管相比,包括形成在基板上的多晶硅薄膜作为有源层,导致高导通电流和改善的开关速度 通过使非晶硅薄膜结晶而获得的多晶硅薄膜。 包括在矩阵电路部分中的NMOS薄膜晶体管还包括形成在衬底上的作为有源层的多晶硅薄膜。 然而,由于存在第一层间绝缘膜,矩阵电路部分中的NMOS薄膜晶体管的栅极绝缘膜整体上比包括在外围电路部分中的NMOS薄膜晶体管的栅极绝缘膜更厚。