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51. 发明专利

JP2009291051A Inverter apparatus 审中-公开
标题翻译：逆变器装置
公开(公告)号：JP2009291051A
公开(公告)日：2009-12-10
申请号：JP2008143643
申请日：2008-05-30
申请人： Toshiba Corp , 株式会社東芝
发明人： HASEGAWA RYUTA , MORIKAWA RYUICHI , TADA NOBUMITSU , OBE TOSHIHARU
IPC分类号： H02M7/48
摘要： PROBLEM TO BE SOLVED: To provide an inverter apparatus capable of stably controlling a torque or a switching frequency, even when a motor is driven at a low-speed rotation and a temperature in a switching element is fructuated. SOLUTION: A filter processor 13 performs filtering to the temperature value of the switching element detected by a temperature sensor 11 and a temperature detecting circuit 12, and provides the temperature of the switching element after passing through a filter (block 22-24). A torque limiter 14 regulates an input torque-commanding value, based on the temperature value of the switching element after passing through the filter. A gate generator 15 controls the inverter apparatus on the basis of the torque-commanding value regulated by the torque limiter 14. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：即使当电动机以低速旋转驱动并且开关元件中的温度降低时，也能够提供能够稳定地控制转矩或开关频率的逆变器装置。解决方案：滤波处理器13对由温度传感器11和温度检测电路12检测的开关元件的温度值进行滤波，并且在通过滤波器之后提供开关元件的温度（框22-24 ）。转矩限制器14基于开关元件通过过滤器的温度值来调节输入转矩指令值。门发生器15根据由转矩限制器14调节的转矩指令值来控制逆变器装置。（C）2010，JPO＆INPIT

52. 发明专利

JP2009021445A Inverter apparatus 审中-公开
标题翻译：逆变器装置
公开(公告)号：JP2009021445A
公开(公告)日：2009-01-29
申请号：JP2007183603
申请日：2007-07-12
申请人： Toshiba Corp , 株式会社東芝
发明人： TADA NOBUMITSU , MORIKAWA RYUICHI , OBE TOSHIHARU
IPC分类号： H01L23/36 , H01L23/34 , H01L23/40 , H02M7/48
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an inverter apparatus enabling enhanced cooling performance and manufacturability, and weight reduction corresponding to use conditions. SOLUTION: An inverter apparatus has a radiator 22 for heat radiation, a positive side first conductor 33A joined in an isolation state on a surface of the radiator, a positive side second conductor 33B joined to the positive side first conductor, a negative side first conductor 35A joined in an isolation state on the surface of the radiator, a negative side second conductor 35B joined to the negative side first conductor, and semiconductor chips 17A and 17B each of which has a positive electrode joined to the positive second conductor and a negative electrode joined to the negative second conductor. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够提高冷却性能和可制造性以及与使用条件相对应的重量减轻的逆变器装置。解决方案：逆变器装置具有用于散热的散热器22，在散热器的表面上以隔离状态接合的正侧第一导体33A，与正侧第一导体接合的正侧第二导体33B，负极侧第一导体33B 在散热器的表面上以隔离状态接合的第一侧第一导体35A，与负侧第一导体接合的负极侧第二导体35B，以及分别具有与正二极导体接合的正极的半导体芯片17A，17B，以及连接到负第二导体的负电极。版权所有（C）2009，JPO＆INPIT

53. 发明专利

JP2007305702A Semiconductor device and its manufacturing method 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2007305702A
公开(公告)日：2007-11-22
申请号：JP2006131083
申请日：2006-05-10
申请人： Toshiba Corp , 株式会社東芝
发明人： SEKIYA HIRONORI , OBE TOSHIHARU , MORIKAWA RYUICHI , NINOMIYA TAKESHI , HIRAMOTO HIROYUKI
IPC分类号： H01L23/36
CPC分类号： H01L25/071 , H01L23/3735 , H01L24/48 , H01L25/115 , H01L25/50 , H01L2224/48137 , H01L2224/48227 , H01L2224/48472 , H01L2924/00014 , H01L2924/0102 , H01L2924/01078 , H01L2924/12041 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19107 , H01L2924/30107 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： PROBLEM TO BE SOLVED: To provide an excellently reliable semiconductor device by enhancing cooling performance so as to raise durability. SOLUTION: The semiconductor device include: a semiconductor element 106; a plurality of conductors 13-15 respectively joined with the positive side surface and negative side surface of the semiconductor element; a radiator plate 11 arranged to cross with the junction plane between the semiconductor element and the plurality of conductors so as to radiate the heat of the semiconductor element; and an insulating body 12 for joining the radiator plate and the plurality of conductors. The insulating body is formed with a heat-conductive insulating body 16 at the inner side of a part opposing to the whole conductors, and with a flexible insulating body 17 at a part other than the heat conductive insulating body. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过提高冷却性能以提高耐久性，提供非常可靠的半导体器件。解决方案：半导体器件包括：半导体元件106; 分别与半导体元件的正侧表面和负侧表面接合的多个导体13-15; 散热板11，布置成与半导体元件和多个导体之间的结面交叉以辐射半导体元件的热; 以及用于接合散热板和多个导体的绝缘体12。绝缘体在与整个导体相对的部分的内侧形成有导热绝缘体16，并且在导热绝缘体以外的部分具有柔性绝缘体17。版权所有（C）2008，JPO＆INPIT

54. 发明专利

JP2007214281A Cooler for power converter 有权
标题翻译：电源转换器冷却器
公开(公告)号：JP2007214281A
公开(公告)日：2007-08-23
申请号：JP2006031423
申请日：2006-02-08
申请人： Toshiba Corp , 株式会社東芝
发明人： NINOMIYA TAKESHI , OBE TOSHIHARU , HAGIWARA KEIZO , TADA NOBUMITSU , SEKIYA HIRONORI
IPC分类号： H01L23/473
摘要： PROBLEM TO BE SOLVED: To provide a cooler for a power converter that is capable of efficiently cooling a joined power converter regardless of a shape of a screw for joining the power converter.
SOLUTION: The cooler for a power converter is composed of a body 3 which includes a fin 5 constituting a flow path 9 for flowing a cooling medium, and a lid 4 for closing the flow path 9 and it has the screws 13 respectively having a length longer than a sum of a height (h) of the fin 5 and a thickness (l) of a fin base as a base for the fin 5 and used for joining the power converter 11 to convert DC power to AC power with the body 3. Each part where a screw hole 12 for inserting the screw 13 is formed is provided to the body 3 so as to be longer than the length of the screw 13. The cooler cools the power converter 11 by joining the power converter 11 to the body 3 with the screws 13 via a heat sink 26.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够有效地冷却接合的功率转换器的功率转换器的冷却器，而与用于接合功率转换器的螺钉的形状无关。解决方案：用于功率转换器的冷却器由主体3组成，主体3包括构成用于流动冷却介质的流路9的翅片5和用于封闭流路9的盖4，并且分别具有螺钉13 具有长度大于翅片5的高度（h）的长度和作为翅片5的基座的翅片基底的厚度（l）的长度，并且用于连接功率转换器11以将直流电力转换为交流电力与主体3.形成用于插入螺钉13的螺纹孔12的每个部分被设置到主体3以比螺杆13的长度更长。冷却器通过连接功率转换器11来冷却功率转换器11 通过散热器26通过螺钉13与主体3连接。主体：（C）2007，JPO＆INPIT

55. 发明专利

JP2006080153A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2006080153A
公开(公告)日：2006-03-23
申请号：JP2004259956
申请日：2004-09-07
申请人： Toshiba Corp , 株式会社東芝
发明人： SEKIYA HIRONORI , OBE TOSHIHARU , TADA NOBUMITSU , NINOMIYA TAKESHI
IPC分类号： H01L21/60 , H01L25/07 , H01L25/18
CPC分类号： H01L2224/37 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37144 , H01L2224/37147 , H01L2224/37155 , H01L2224/3716 , H01L2224/40 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/73221 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/1301 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/351 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device for electric power capable of improving electric reliability, preventing short circuit generated by electromigration and mitigating stress accompanied by a heat cycle in consideration of environmental pollution in connections between the main electrode of a semiconductor device and a conductor. SOLUTION: A semiconductor device 1 for electric power is provided with a conductive resin 70 in the connection between the main electrode 11 of a semiconductor device 10 and an electrode lead-out conductor 50, and a sealing object 71 with moisture resistance in the circumference wherein the conductive resin 70 is exposed. The conductive resin 70 contains conductive substances of silver or the like, in insulating substrates of epoxy system resin or the like. The sealing object 71 prevents generation of the electromigration of the conductive substance contained in the conductive resin 70. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：为了提供能够提高电可靠性的电力的半导体器件，考虑到半导体的主电极之间的连接中的环境污染，防止伴随着热循环的应力伴随着电循环产生的短路设备和导体。解决方案：用于电力的半导体器件1在半导体器件10的主电极11和电极引出导体50之间的连接中设置有导电树脂70和具有耐湿性的密封对象71 导电树脂70露出的圆周。在环氧系树脂等的绝缘基板中，导电性树脂70含有银等的导电性物质。密封件71防止导电树脂70中包含的导电物质的电迁移。版权所有：（C）2006，JPO＆NCIPI

56. 发明专利

JP2005348529A Inverter device 有权
标题翻译：逆变器装置
公开(公告)号：JP2005348529A
公开(公告)日：2005-12-15
申请号：JP2004165686
申请日：2004-06-03
申请人： Toshiba Corp , 株式会社東芝
发明人： OBE TOSHIHARU , TADA NOBUMITSU , SEKIYA HIRONORI , NINOMIYA TAKESHI
IPC分类号： H02M7/48
CPC分类号： H02M7/003 , H01L25/115 , H01L2224/49111 , H01L2924/13055 , H01L2924/30107 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an inverter device which copes with the improvement in its energization capacity and the downsizing by enhancing the cooling efficiency of a semiconductor device for power, and besides is excellent in manufacturability.
SOLUTION: This inverter device is equipped with a semiconductor chip which constitutes one arm of the inverter, a first conductor 33 which joins the positive electrode side of this semiconductor chip, and a second conductor 35 which joins the negative electrode side of the semiconductor chip concerned. The above first conductor 33 and the above second conductor 35 are arranged above a cooler 22 so that the junction plane between the positive electrode of the above semiconductor chip and the first conductor 33 and the junction plane between negative electrode of the above semiconductor chip and the above second conductor 35 may be severally nonparallel with the surface of he above cooler 22 which cools the above semiconductor chip.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种通过提高半导体装置的功率的冷却效率来提高其通电能力和小型化的逆变器装置，并且还具有优异的可制造性。解决方案：该逆变器装置配备有构成逆变器的一个臂的半导体芯片，连接该半导体芯片的正极侧的第一导体33和与该半导体芯片的正极侧连接的第二导体35 半导体芯片有关。上述第一导体33和上述第二导体35配置在冷却器22的上方，使得上述半导体芯片的正极与第一导体33的接合面与上述半导体芯片的负极的接合面与第二导体35上方的第二导体35可以与其冷却上述半导体芯片的冷却器22的表面分别不平行。版权所有（C）2006，JPO＆NCIPI

57. 发明专利

JP2005210006A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2005210006A
公开(公告)日：2005-08-04
申请号：JP2004017203
申请日：2004-01-26
申请人： Toshiba Corp , 株式会社東芝
发明人： SEKIYA HIRONORI , OBE TOSHIHARU , TADA NOBUMITSU , HAGIWARA KEIZO , HIRAMOTO HIROYUKI
IPC分类号： H01L23/34 , H01L25/04 , H01L25/18
CPC分类号： H01L2224/48091 , H01L2224/48137 , H01L2224/48472 , H01L2924/1301 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having an excellent electric characteristic, durability, and reliability. SOLUTION: In the semiconductor device, a sheet-form heat radiating insulator 14 is interposed connectively between a conductor 15 with a semiconductor 106 mounted thereon, and a heat radiator 12, and insulating resins 16 are so disposed in both the end portions of the conductor 15 for mount as to contact them with both the ends. Consequently, the high heat radiating quality of the device and its excellent electric characteristic are made compatible with each other. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供具有优异的电特性，耐久性和可靠性的半导体器件。解决方案：在半导体器件中，片状散热绝缘体14被连接地插入在其上安装有半导体106的导体15和散热器12之间，绝缘树脂16设置在两个端部用于安装的导体15与两端接触。因此，器件的高散热性能和优异的电特性彼此兼容。版权所有（C）2005，JPO＆NCIPI

58. 发明专利

JP2005012940A Inverter device 审中-公开
标题翻译：逆变器装置
公开(公告)号：JP2005012940A
公开(公告)日：2005-01-13
申请号：JP2003175294
申请日：2003-06-19
申请人： Toshiba Corp , 株式会社東芝
发明人： TADA NOBUMITSU , OBE TOSHIHARU
IPC分类号： H02M7/48
摘要： PROBLEM TO BE SOLVED: To provide an inverter device reducible in inductance parasitizing on wiring from a DC smoothing capacitor to a power semiconductor element, small in size and high in reliability. SOLUTION: A capacitor module 1 is constituted by containing in a case 4 a plurality of capacitor elements 11A, 12A and 13A which are connected in parallel with one another by positive and negative connecting conductors 52, 62, of which the one-side ends serve as positive and negative terminals, and which form three pairs of the elements. The capacitor module also comprises positive and negative insulating laminated conductors 5, 6 that connect capacitor positive and negative terminals 112 to 114 and positive and negative terminals 102 to 104, 202 to 204 of a semiconductor module 2. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种减小从直流平滑电容器到功率半导体元件的布线的电感寄生的逆变器装置，尺寸小，可靠性高。解决方案：电容器模块1通过在壳体4中包含多个电容元件11A，12A和13A构成，多个电容器元件11A，12A和13A通过正负的连接导体52,62彼此并联连接，侧端用作正端子和负端子，并且形成三对元件。电容器模块还包括将电容器正负极端子112至114以及半导体模块2的正负极端子102至104,202至204连接的正和负绝缘叠层导体5,6。（C） 2005年，JPO＆NCIPI

59. 发明专利

JP2004087735A Semiconductor device 审中-公开
公开(公告)号：JP2004087735A
公开(公告)日：2004-03-18
申请号：JP2002245877
申请日：2002-08-26
申请人： Toshiba Corp , 株式会社東芝
发明人： SEKIYA HIRONORI , HIRAMOTO HIROYUKI , SHIMIZU TOSHIO , OBE TOSHIHARU , TADA NOBUMITSU
IPC分类号： H01L23/36 , H01L23/373 , H01L25/07 , H01L25/18
CPC分类号： H01L2224/48091 , H01L2224/48137 , H01L2224/48472 , H01L2924/1301 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device having the excellent electric characteristics and thermal characteristics. SOLUTION: A conductive material 19 for mounting in which a semiconductor element 111 is allocated is connected with a heat radiating material (heat sink) 13 (or a cooling material 15) with a heat radiating insulator sheet 17 which is formed with the pressurized molding process in the thickness of 80% or less for the initial thickness of a basic material. Accordingly, this heat radiating insulator sheet 17 ensures the thermal conductivity of 3Wm/K or more and insulation breakdown strength of 30 kV/mm or more. COPYRIGHT: (C)2004,JPO

60. 发明专利

JP2003153554A INVERTER DEVICE AND ITS MANUFACTURING METHOD 审中-公开
公开(公告)号：JP2003153554A
公开(公告)日：2003-05-23
申请号：JP2001347876
申请日：2001-11-13
申请人： HONDA MOTOR CO LTD , TOSHIBA CORP
发明人： NAKAMURA MASAMI , AMANO ATSUSHI , SHIMANE IWAO , DANJO YASUYUKI , SAITO JUICHI , OBE TOSHIHARU , TADA NOBUMITSU , SEKIYA HIRONORI
IPC分类号： H01L23/36 , H02M7/00 , H02M7/48 , H02M7/5387
摘要： PROBLEM TO BE SOLVED: To provide an inverter device which can enhance the capacity of current application by raising the cooling efficiency in an inverter main circuit, and can contribute to the downsizing and also can exhibit high reliability. SOLUTION: In an inverter device where the main circuit of a three-phase inverter having a plurality of arms is composed of a plurality of semiconductor chips for power, one arm of the three-phase inverter main circuit is constituted by connecting IGBTs 191A-191D as semiconductor chips 10 mm or under in size and diodes 201A-201C in parallel. Also, the IGBTs 191A-191D and the diodes 201A-201C in question are joined with a conductor 22 not less than 1.5 mm and not more than 5 mm in thickness, and this conductor is bonded to a cooler 24 via an insulating resin sheet 25 containing ceramics.

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