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51. 发明专利

JPH0258840A MANUFACTURE OF II-VI COMPOUND SEMICONDUCTOR CRYSTAL 失效
公开(公告)号：JPH0258840A
公开(公告)日：1990-02-28
申请号：JP21139988
申请日：1988-08-25
申请人： TOSHIBA CORP
发明人： FUKUDA KATSUYOSHI , KAWACHI MASARU
IPC分类号： H01L21/363 , H01L21/365 , H01L33/28
摘要： PURPOSE:To produce II-VI group compound semiconductor crystals of high quality by a method wherein the crystals are manufactured by heating seed crystal using a seed crystal locating member almost partly formed of a high melting point metal such as W, Mo, Ta, etc. CONSTITUTION:For example, 10g of material ZeSe 11 and 5mg/cm of halogen carrier I2 12 are sealed up in the inner bottom part of a sealing tube 101 formed of quartz in diameter of 30mm while a seed crystal press bar 14 comprising a ZnSe seed crystal 13 and a seed crystal locating member i.e., tungsten W 8mm in diameter 30mm in length and 28g in weight on the seed crystal 13 is placed on an upper part of the sealing tube 101. Next, the sealing tube 101 is vacuumized down to around 10 Torr of vacuum degree and then the top part thereof is fusion-sealed. Then, the sealing tube 101 is arranged in an electric furnace for crystal deposition. The electric furnace is differentiated in temperature in the tube axial direction of the sealing tube 101 inserted thereinto while the seed crystal 13 side is arranged on the low temperature part to be crystal- deposited for around two weeks. Through these procedures, excellent ZnSe single crystal in dimension of 25mm deep X 20mm wide X 15mm long can be produced in excellent reproducibility.

52. 发明专利

JPH01148796A PRODUCTION OF OXIDE SUPERCONDUCTOR CRYSTAL 失效
公开(公告)号：JPH01148796A
公开(公告)日：1989-06-12
申请号：JP30463387
申请日：1987-12-03
申请人： TOSHIBA CORP
发明人： FUKUDA KATSUYOSHI , TERAJIMA KAZUTAKA
IPC分类号： C30B17/00 , C30B15/00 , C30B29/22 , H01B13/00 , H01L39/24
摘要： PURPOSE:To grow a multicomponent oxide superconductor crystal of high quality at a low temp. by adopting a liq. phase growth method using two kinds of fluorides including an alkali metal fluorides as a flux. CONSTITUTION:A multicomponent oxide superconductor crystal is grown by a liq. phase growth method using two kinds of fluorides including an alkali metal fluoride as a flux. The multicomponent oxide superconductor may be represented by a general formula ABa2Cu3O7-delta (where A is Y, Yb, Ho, Dy, Eu, Er, Tm or Lu). The flux may be a liq. mixture of KF-BaF2, NaF-CaF2, KF-NaF or LiF-KF.

53. 发明专利

JPH01134000A DEVICE FOR PRODUCING SEMICONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPH01134000A
公开(公告)日：1989-05-26
申请号：JP29275487
申请日：1987-11-19
申请人： TOSHIBA CORP
发明人： NISHIO JOSHI , FUJII TAKASHI , TERAJIMA KAZUTAKA , FUKUDA KATSUYOSHI , KATSUMATA TORU
IPC分类号： C30B27/02 , C30B35/00
摘要： PURPOSE:To stably produce a semiconductor single crystal having a low content of carbon by forming at least the surface of the specified member among the heat-insulating or heat-shielding members arranged in a vessel of the title device with SiC, Si3N4, or AlN. CONSTITUTION:An opened raw material storage part 2 such as a crucible made of PBN is arranged in the high-pressure vessel 1 of the device, an annular heater 3 is provided around the storage part 2, and a heat-insulating or heat- shielding graphitic body 4 is provided at the part (inner heat-shielding body) to be heated to >=900 K around the heater 3. A heat-shielding body 5 with at least the surface coated with SiC, Si3N4, or lN is provided at the part (outer heat-shielding body) to be heated to =900 K and the outer heat-shielding body to

54. 发明专利

JPH01131098A PRODUCTION OF OXIDE SUPERCONDUCTOR CRYSTAL 失效
公开(公告)号：JPH01131098A
公开(公告)日：1989-05-23
申请号：JP28811787
申请日：1987-11-13
申请人： TOSHIBA CORP
发明人： FUKUDA KATSUYOSHI , NISHIO JOSHI , KATSUMATA TORU
IPC分类号： C30B17/00 , C30B29/22 , H01B12/00 , H01B13/00 , H01L39/12 , H01L39/24
摘要： PURPOSE:To facilitate the production of plural oxide superconductor of good quality by using flux containing vanadium oxide, when the crystal of plural oxide superconductor is allowed to grow by the liquid-phase growth method. CONSTITUTION:A solution 7 of flux containing vanadium oxide such as V2O5, and raw materials of plural oxide superconductor such as a mixture of Y2O3, 2BaO, and 3CuO, is charged in the crucible 3 in the single crystal-pulling up unit. Then, the solution 7 is heated with heater 2 at about 1,200-1,300 deg.C and cooled down to about 700 deg.C. Then, the seed crystal such as of Y-Ba-Cu-O single crystal on the top of the pulling-up shaft 8 is allowed to contact with the solution 7 and the oxide superconductor is pulled up, as an oxygen gas is fed from pipe 12. Thus, crystals of oxide supercouductor with high homogeneity of superconductive transition point and large critical current can be produced with high reproducibility.

55. 发明专利

JPS63310798A PRODUCTION OF OXIDE SUPERCONDUCTING ELEMENT WAFER 失效
公开(公告)号：JPS63310798A
公开(公告)日：1988-12-19
申请号：JP14572187
申请日：1987-06-11
申请人： TOSHIBA CORP
发明人： TERAJIMA KAZUTAKA , FUKUDA KATSUYOSHI
IPC分类号： C30B17/00 , C30B19/02 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/12 , H01L39/24
摘要： PURPOSE:To obtain an element wafer having a crystal layer of a multicomponent oxide superconductor by forming a multicomponent oxide superconducting crystal layer on a specified crystal substrate by a liquid phase growth method. CONSTITUTION:For example, a soln. 22 contg. YCuO powder dissolved in a flux comprising a liquid mixture of BaCO3 and B2O3 is prepd. in a Pt crucible 21 of a liquid phase growth device. A specified crystal substrate, i.e. YCuO crystal substrate 23 is held by a holder 25 provided to a tip end of a supporting rod 24 and allowed to contact with the soln. 22. Thus, liquid epitaxial growth is proceeded at a specified cooling rate while revolving the crystal substrate at high speed. By this method, an epitaxial wafer having a uniform Ba2Cu3O7-delta single crystal layer 27 formed on a YCuO crystal substrate 23 with a specified thickness is obtd.

56. 发明专利

JPS63172941A METHOD FOR MEASURING DIFFUSION CONSTANT OF COMPOUND AND ALLOY IN MOLTEN STATE 失效
公开(公告)号：JPS63172941A
公开(公告)日：1988-07-16
申请号：JP394587
申请日：1987-01-13
申请人： TOSHIBA CORP
发明人： YOSHIDA HIROAKI , KATSUMATA TORU , FUKUDA KATSUYOSHI , TERAJIMA KAZUTAKA
IPC分类号： H01L21/66 , G01N13/00
摘要： PURPOSE:To determine the more precise diffusion speed and to obtain a uniform material having high quality by alternately joining two kinds of small piece samples to each other and subjecting the samples to heating, melting and resolidifying in a convectionless state in a magnetic field. CONSTITUTION:The sample of testing diffusion is constituted by alternately jointing two kinds of the small pieces sample, CaSb layers 6 and InSb layers 7 and sandwiching both ends with silicon plates 8 in order to obtain a uniform liquid boundary. The sample prepd. by laminating plural sheets of such samples are disposed in an electric oven 1 and the magnetic field is impressed thereto by an electromagnet 2. The samples are then subjected to heating, melting nd resolidifying in the pseudo gravityfree state of decreased convection while a temp. gradient is held applied in the joining direction of the raw materials. The exact diffusion speed is measured by measuring the element distribution in the joining direction by mass spectrometry, etc. The determination of the diffusion speed in the liquid which is heretofore impossible is thereby permitted and, therefore the uniform material having the high quality is obtd.

57. 发明专利

JPS62206439A CARBON CONCENTRATION MEASUREMENT OF GAAS CRYSTAL 失效
公开(公告)号：JPS62206439A
公开(公告)日：1987-09-10
申请号：JP4865386
申请日：1986-03-07
申请人： TOSHIBA CORP
发明人： FUKUDA KATSUYOSHI , YASUAMI SHIGERU
IPC分类号： H01L21/66 , G01N27/00
摘要： PURPOSE:To measure the concentration of carbon in a GaAs crystal, by irradiating an electrode provided on a GaAs crystal with a specified light to utilize the dependence of a flowing current on the concentration of carbon. CONSTITUTION:A Schottky diode is formed on a semi-insulated GaAs crystal substrate 1. Si ion is injected into an active layer 2 on the condition of 150keV 2.5X10 cm and the layer is subjected to a capless anneal at 850 deg.C for 15min. A resisting contact electrode 3 and a Schottky electrode 4 are formed on the active layer 2 separately. A Schottky voltage 5 is applied between the Schottky electrode and the resisting electrode so that a Schottky reverse current will be 1muA. For instance, when an entire sample is irradiated with about 1,000 lux of light and then, the voltage VR is read out. On the other hand, a sample 4mm thick is made out of a part near the substrate from the same ingot and the concentration of carbon of the substrate is determined by N=2.4X10 alpha(cm ) with the breathing coefficient alpha of 582cm by the LVM breathing method.

58. 发明专利

JPS61152067A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61152067A
公开(公告)日：1986-07-10
申请号：JP27322484
申请日：1984-12-26
申请人： TOSHIBA CORP
发明人： FUKUDA KATSUYOSHI , SAITO YASUYUKI , YASUAMI SHIGERU , HOJO AKIMICHI
IPC分类号： H01L29/43 , H01L21/28 , H01L29/45
摘要： PURPOSE:To form a high speed integrated circuit by providing an electrode formed with a conductor layer which contains a metal boride of a main component of high melting point transition metal such as Ta, Nb, Ti, W, Mo, etc. or further contains nitrogen on a semiconductor substrate such as GaAs, etc. CONSTITUTION:A GaAs wafer 2 which has an epitaxial growth layer 1 is prepared and, e.g., boracic tungsten 3 3,000Angstrom thick is laid on he surface of the wafer by plasma decomposition. The boracic tungsten is finished to a required shape and dimensions using hot etching. Then, a COD-AlN film 4 is formed on all the surface of the wafer and annealed. Further, the back surface of the wafer is made thinner by polishing, an Au-Ge layer is formed on all the back surface by vacuum deposition, etc. and an ohmic electrode 5 of the back surface is formed by making an alloy with GaAs. At last, the AlN film 4 on the surfaces is removed with a solution of fluoric acid, etc.

59. 发明专利

JPS5918650A Evaluation device for semiconductor single crystal 失效
标题翻译：用于半导体单晶的评估装置
公开(公告)号：JPS5918650A
公开(公告)日：1984-01-31
申请号：JP12786682
申请日：1982-07-22
申请人： Toshiba Corp
发明人： FUKUDA KATSUYOSHI , KOKUBU YOSHIHIRO
IPC分类号： G01N21/00 , G01R31/26 , H01L21/66
CPC分类号： H01L22/00
摘要： PURPOSE:To evaluate the electric characteristic in optical manner by a method wherein a GaP single crystal is irradiated with infrared rays through two kinds of filters, and thus the semi-value width of a spectro-filter used for the photo absorption with the wavelegth of 3.2mum is set as the specific value. CONSTITUTION:The infrared rays are radiated from a light source 1 and made to pass selectively through the filters 31 and 32 continuously by means of a chopper 2, and accordingly the GaP 6 is irradiated with monochromatic light via a small hole 5, resulting in the detection 7 of transmitted light. The GaP has the peak of absorption B due to the transition in band in the neighborhood of wavelength of 3.2mum (filter 31), and the part wherein transmittance decreases linearly to the side of longer wavelength is absorption F (filter 32) due to free carriers. The absorption efficiency alphaB is proportional to the carrier density (n), and alphaF is proportional to the (n), thus having a fixed relation of inverse proportion to the mobility mu. The semi-value width of the filter 31 is set at 0.016-0.5mum and thus determined over the value of variation of absorption peak by ambient temperature, the detected output is amplified 8 and synchronized 11 with the chopper, resulting in phase detection 9, alphaB and alphaF are calculated, n and mu are arithmetically operated 10, and accordingly the evaluation of the GaP 6 can be realized.
摘要翻译：目的：以通过两种滤光片对红外线照射GaP单晶的方法以光学方式评价电特性，从而将用于光吸收的分光滤光片的半值宽度与 3.2mum被设定为具体值。构成：红外线从光源1照射并通过斩光器2连续地通过滤光器31和32通过，因此GaP 6经由小孔5照射单色光，导致检测7个透射光。由于波长3.2μm附近的波段（滤光器31）的波段的转变，GaP具有吸收峰B，并且其中透射率比较长波长侧的线性下降的部分是由于游离的吸收F（滤波器32）载体。吸收效率αB与载流子密度（n）成正比，αF与（n）成比例，因此具有与迁移率mu成反比的固定关系。滤波器31的半值宽度设定为0.016-0.5μm，由此根据环境温度确定吸收峰值的变化值，检测到的输出被放大8并与斩波器同步11，导致相位检测9，计算αB和αF，n和μ是算术运算的10，因此可以实现GaP 6的评估。

60. 发明专利

JPS594310A Surface acoustic wave device 失效
标题翻译：表面声波设备
公开(公告)号：JPS594310A
公开(公告)日：1984-01-11
申请号：JP11297482
申请日：1982-06-30
申请人： Toshiba Corp
发明人： EHATA YASUO , SUZUKI HITOSHI , FUKUDA KATSUYOSHI , MATSUMURA SADAO
IPC分类号： H03H9/25 , H03H3/08 , H03H9/02
CPC分类号： H03H9/02543
摘要： PURPOSE: To improve the temperature characteristic, by setting a cut-out angle and the direction of propagation so that a delay time temperature coefficient is zero or negative in the state without electrodes.
CONSTITUTION: The cut-out angle and the direction of propagation of a surface acoustic wave of lithium borate single crystal substrates 11, 21 are set so that the delay time temperature coefficient TCD is zero or negative to form electrodes 12, 13, 22, 23, 24 made of an Al vapor-deposition film. Since the TCD of the substrates 11, 21 is changed positive by increasing the electrode film thickness, the TCD is brought to the range of ±5ppm/°C by controlling the film thickness of the input/output electrodes 12, 13, the terminal electrode 22, and the reflecting electrodes 23, 24. The excellent temperature characteristics is obtained by forming a surface acoustic filter and a surface wave resonator in this way.
COPYRIGHT: (C)1984,JPO&Japio
摘要翻译：目的：为了提高温度特性，通过设定切断角度和传播方向，使得在没有电极的状态下，延迟时间温度系数为零或负。构成：将硼酸锂单晶衬底11,21的表面声波的切出角度和传播方向设定为使得延迟时间温度系数TCD为零或负，形成电极12,13,22,23 ，24由Al蒸镀膜制成。由于通过增加电极膜厚度使衬底11,21的TCD变为正，所以通过控制输入/输出电极12,13的膜厚度使TCD达到+或-5ppm /℃的范围，端子电极22和反射电极23,24。通过以这种方式形成表面声波滤波器和表面波谐振器来获得优异的温度特性。

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