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51. 发明申请

WO2002086954A1 METHOD AND SYSTEM FOR PROVIDING A SINGLE-SCAN, CONTINUOUS MOTION SEQUENTIAL LATERAL SOLIDIFICATION 审中-公开
标题翻译：提供单扫描，连续运动顺序横向固化的方法和系统
公开(公告)号：WO2002086954A1
公开(公告)日：2002-10-31
申请号：PCT/US2001/012799
申请日：2001-04-19
申请人： THE TRUSTEE OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK , NVIK CORPORATION , SPOSILI, Robert, S. , IM, James, S.
发明人： SPOSILI, Robert, S. , IM, James, S.
IPC分类号： H01L21/268
CPC分类号： H01L21/02686 , B23K26/066 , B23K26/08 , B23K26/082 , B23K2201/40 , C30B13/00 , C30B29/06 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L21/2026 , H01L21/268
摘要： A method and system for processing a silicon thin film sample on a substrate. The substrate has a surface portion that does not seed crystal growth in the silicon thin film. The film sample has a first edge and a second edge. An irradiation beam generator is controlled to emit successive irradiation beam pulses at a predetermined repetition rate. Each of the irradiation beam pulses is masked to define a first plurality of beamlets and a second plurality of beamlets, the first and second plurality of beamlets of each of the irradiation pulses being provided for impringing the film sample and having an intensity which is sufficient to melt irradiated portions of the film sample throughout their entire thickness. The film sample is continuously scanned at a constant predetermined speed, so that a successive impingement of the first and second beamlets of the irradiation pulses occurs in a scanning direction of the film sample between the first edge and the second edge. During the continuous scanning of the film sample, a plurality of first areas of the film sample are successively irradiated using the first beamlets of the irradiation beam pulses so that the first areas are melted throughout their thickness and leaving irradiated regions between respective adjacent ones of the first areas. Also during the continuous scanning, each one of the first areas irradiated using the first beamlets of each of the irradiation pulses is allowed to resolidify and crystallize. During resolidification and crystallization of the first areas, a plurality of second areas of the film sample are successively irradiated using the second beamlets of the irradiation beam pulses so that the second areas are melted throughout their thickness. Each of the second areas partially overlaps a respective pair of the resolidified and crystallized first areas and the respective unirradiated therebwetween.
摘要翻译：一种在衬底上处理硅薄膜样品的方法和系统。基板具有不会在硅薄膜中晶体生长的表面部分。胶片样品具有第一边缘和第二边缘。控制照射光束发生器以预定的重复频率发射连续的照射光束脉冲。每个照射光束脉冲被掩蔽以限定第一多个子束和第二多个子束，每个照射脉冲的第一和第二多个子束被提供用于对膜样品进行冲击并具有足够的强度在其整个厚度下熔融照射的薄膜样品部分。以恒定的预定速度连续扫描胶片样品，使得在第一边缘和第二边缘之间的胶片样品的扫描方向上发生第一和第二子束的照射脉冲的连续冲击。在薄膜样品的连续扫描期间，利用照射束脉冲的第一子束连续地照射薄膜样品的多个第一区域，使得第一区域在其厚度上熔化，并将照射区域留在相应的相邻的第一区此外，在连续扫描期间，使用每个照射脉冲的第一子束照射的每个第一区域被允许重新凝固并结晶。在第一区域的再凝固和结晶期间，使用第二子束的照射束脉冲连续地照射多个第二区域的膜样品，使得第二区域在整个厚度内熔化。每个第二区域部分地重叠相应的一对重新固化和结晶的第一区域以及相应的未被照射的区域。

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