专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2009125509A1 CRYSTALLINE SEMICONDUCTOR STRIPE TRANSISTOR AND METHOD FOR FABRICATING THEREOF 审中-公开
标题翻译：晶体管半导体晶体管及其制造方法
公开(公告)号：WO2009125509A1
公开(公告)日：2009-10-15
申请号：PCT/JP2008/069288
申请日：2008-10-17
申请人： SHARP KABUSHIKI KAISHA , AFENTAKIS, Themistokles , SPOSILI, Robert, S. , VOUTSAS, Apostolos, T.
发明人： AFENTAKIS, Themistokles , SPOSILI, Robert, S. , VOUTSAS, Apostolos, T.
IPC分类号： H01L21/336 , H01L21/20 , H01L29/786
CPC分类号： H01L29/78696 , H01L21/02532 , H01L21/02686 , H01L27/1285 , H01L29/66757 , H01L29/66772 , H01L29/785
摘要： A transistor (500) with crystalline semiconductor stripes and an associated fabrication process are provided. The method provides a substrate, and deposits a semiconductor layer overlying the substrate. The semiconductor layer is irradiated using a scanning step-and-repeat laser annealing process, which agglomerates portions of the semiconductor layer. In response to cooling agglomerated semiconductor material, a transistor active semiconductor region (504) is formed including a plurality of crystalline semiconductor stripes (506) oriented along parallel axes (508). In one aspect, a channel region is formed from the plurality of oriented crystalline semiconductor stripes (506), and the method forms a gate dielectric (514) overlying the channel region (518), with a gate electrode (516) overlying the gate dielectric. In another aspect, forming the transistor active semiconductor region (504) includes forming source (520), drain (522), and channel (518) regions from the plurality of oriented crystalline semiconductor stripes (506).
摘要翻译：提供具有晶体半导体条纹和相关制造工艺的晶体管（500）。该方法提供衬底，并且沉积覆盖衬底的半导体层。使用扫描分步重复激光退火工艺照射半导体层，其使半导体层的部分凝聚。响应于冷却聚集的半导体材料，形成包括沿着平行轴（508）取向的多个晶体半导体条（506）的晶体管有源半导体区（504）。在一个方面，由多个取向晶体半导体条形成通道区域，该方法形成覆盖沟道区域（518）的栅极电介质（514），栅极电极（516）覆盖栅极电介质。在另一方面，形成晶体管有源半导体区域（504）包括从多个取向结晶半导体条（506）形成源极（520），漏极（522）和沟道（518）区域。

2. 发明申请

WO2002086954A1 METHOD AND SYSTEM FOR PROVIDING A SINGLE-SCAN, CONTINUOUS MOTION SEQUENTIAL LATERAL SOLIDIFICATION 审中-公开
标题翻译：提供单扫描，连续运动顺序横向固化的方法和系统
公开(公告)号：WO2002086954A1
公开(公告)日：2002-10-31
申请号：PCT/US2001/012799
申请日：2001-04-19
申请人： THE TRUSTEE OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK , NVIK CORPORATION , SPOSILI, Robert, S. , IM, James, S.
发明人： SPOSILI, Robert, S. , IM, James, S.
IPC分类号： H01L21/268
CPC分类号： H01L21/02686 , B23K26/066 , B23K26/08 , B23K26/082 , B23K2201/40 , C30B13/00 , C30B29/06 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L21/2026 , H01L21/268
摘要： A method and system for processing a silicon thin film sample on a substrate. The substrate has a surface portion that does not seed crystal growth in the silicon thin film. The film sample has a first edge and a second edge. An irradiation beam generator is controlled to emit successive irradiation beam pulses at a predetermined repetition rate. Each of the irradiation beam pulses is masked to define a first plurality of beamlets and a second plurality of beamlets, the first and second plurality of beamlets of each of the irradiation pulses being provided for impringing the film sample and having an intensity which is sufficient to melt irradiated portions of the film sample throughout their entire thickness. The film sample is continuously scanned at a constant predetermined speed, so that a successive impingement of the first and second beamlets of the irradiation pulses occurs in a scanning direction of the film sample between the first edge and the second edge. During the continuous scanning of the film sample, a plurality of first areas of the film sample are successively irradiated using the first beamlets of the irradiation beam pulses so that the first areas are melted throughout their thickness and leaving irradiated regions between respective adjacent ones of the first areas. Also during the continuous scanning, each one of the first areas irradiated using the first beamlets of each of the irradiation pulses is allowed to resolidify and crystallize. During resolidification and crystallization of the first areas, a plurality of second areas of the film sample are successively irradiated using the second beamlets of the irradiation beam pulses so that the second areas are melted throughout their thickness. Each of the second areas partially overlaps a respective pair of the resolidified and crystallized first areas and the respective unirradiated therebwetween.
摘要翻译：一种在衬底上处理硅薄膜样品的方法和系统。基板具有不会在硅薄膜中晶体生长的表面部分。胶片样品具有第一边缘和第二边缘。控制照射光束发生器以预定的重复频率发射连续的照射光束脉冲。每个照射光束脉冲被掩蔽以限定第一多个子束和第二多个子束，每个照射脉冲的第一和第二多个子束被提供用于对膜样品进行冲击并具有足够的强度在其整个厚度下熔融照射的薄膜样品部分。以恒定的预定速度连续扫描胶片样品，使得在第一边缘和第二边缘之间的胶片样品的扫描方向上发生第一和第二子束的照射脉冲的连续冲击。在薄膜样品的连续扫描期间，利用照射束脉冲的第一子束连续地照射薄膜样品的多个第一区域，使得第一区域在其厚度上熔化，并将照射区域留在相应的相邻的第一区此外，在连续扫描期间，使用每个照射脉冲的第一子束照射的每个第一区域被允许重新凝固并结晶。在第一区域的再凝固和结晶期间，使用第二子束的照射束脉冲连续地照射多个第二区域的膜样品，使得第二区域在整个厚度内熔化。每个第二区域部分地重叠相应的一对重新固化和结晶的第一区域以及相应的未被照射的区域。

3. 发明申请

WO1997045827A1 CRYSTALLIZATION PROCESSING OF SEMICONDUCTOR FILM REGIONS ON A SUBSTRATE, AND DEVICES MADE THEREWITH 审中-公开
标题翻译：基片上的半导体膜片的晶体结构处理及其器件
公开(公告)号：WO1997045827A1
公开(公告)日：1997-12-04
申请号：PCT/US1996007730
申请日：1996-05-28
申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK , IM, James, S. , SONG, Hyun, Jin , SPOSILI, Robert, S. , YOON, Jung, H.
发明人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK
IPC分类号： G09G03/36
CPC分类号： H01L21/02686 , C30B13/24 , H01L21/02595 , H01L21/2026 , H01L21/30 , H01L27/1296 , Y10S117/904
摘要： Semiconductor integrated devices such as transistors are formed in a film of semiconductor material formed on a substrate. For improved device characteristics, the semiconductor material has regular, quasi-regular or single-crystal structure. Such a structure is made by a technique involving localized irradiation of the film with one or several pulses of a beam of laser radiation, locally to melt the film through its entire thickness. The molten material then solidifies laterally from a seed area of the film. The semiconductor devices can be included as pixel controllers and drivers in liquid-crystal display devices, and in image sensors, static random-access memories (SRAM), silicon-on-insulator (SOI) devices, and three-dimensional integrated circuit devices.
摘要翻译：诸如晶体管的半导体集成器件形成在形成在衬底上的半导体材料的膜中。为了改善器件特性，半导体材料具有规则的准规则或单晶结构。这种结构是通过一种技术来进行的，该技术涉及用激光辐射束的一个或多个脉冲对薄膜进行局部照射，局部地将薄膜熔化成整个厚度。熔融材料然后从膜的种子区域横向固化。半导体器件可以作为液晶显示器件中的像素控制器和驱动器，以及图像传感器，静态随机存取存储器（SRAM），绝缘体上硅（SOI）器件和三维集成电路器件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式