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    • 52. 发明申请
    • Plasma cutter, and plasma cutter power supply system
    • 等离子切割机和等离子切割机供电系统
    • US20080093347A1
    • 2008-04-24
    • US11907838
    • 2007-10-18
    • Yoshihiro YamaguchiTakahiro Iriyama
    • Yoshihiro YamaguchiTakahiro Iriyama
    • H05H1/36B23K9/10H05H1/26
    • H05H1/36
    • In a main circuit 11 of the plasma cutter power supply device 6, a plurality of DC power units 14-1, . . . 14-n of low capacity are connected in parallel on their DC output sides, and are connected to a plasma torch 20. Each power unit 14-1, . . . 14-n can operate asynchronously and independently from each other. The power supply control device 6 controls the number of power units to be operated, and the intensity of output electrical current at which each of them is to be operated, according to the cutting conditions (the nature of the material to be cut, its thickness, and the cutting speed) and according to the number of power units which can be operated. If some of the power units are faulty, the power supply control device 6 controls the cutting conditions which can be accepted, according to the number of normal power units.
    • 在等离子切割器电源装置6的主电路11中,多个直流电力单元14-1, 。 。 14 -n的低容量在其直流输出侧并联连接,并连接到等离子体焰炬20。 每个电源单元14-1,。 。 。 14 -n可以彼此异步和独立地操作。 电源控制装置6根据切割条件(待切割材料的性质,其厚度等)来控制要操作的功率单元的数量和要各自操作的输出电流的强度 ,切割速度)以及可以操作的动力单元的数量。 如果一些动力单元有故障,则电源控制装置6根据正常功率单元的数量来控制可以接受的切割条件。
    • 54. 发明授权
    • Pressed-contact type semiconductor device
    • 压接式半导体器件
    • US07301178B2
    • 2007-11-27
    • US11212602
    • 2005-08-29
    • Yoshihiro YamaguchiKenji Oota
    • Yoshihiro YamaguchiKenji Oota
    • H01L29/74
    • H01L29/0661H01L24/72H01L29/0615H01L29/0657H01L29/32H01L29/74H01L2924/0102H01L2924/1301H01L2924/00
    • A P++-type first diffusion layer is formed by diffusing P-type impurities on a front side of an N−-type semiconductor substrate, and an N-type fourth diffusion layer which is shallower than the first diffusion layer is formed by diffusing N-type impurities on the front side, and a P-type second diffusion layer is locally formed in a ring-shape so as to be exposed on the lateral side by diffusing P-type impurities on the back side, and P-type impurities are diffused on the back side of the substrate and a P+-type third diffusion layer is locally formed so as to be distributed inward from the second diffusion layer and not to be exposed to the lateral side, and the P-type second diffusion layer and the P+-type third diffusion layer are formed in the two-stage structure, thereby various characteristics can be improved.
    • AP ++类型的第一扩散层是通过在N +型半导体衬底的正面扩散P型杂质形成的,N型第四扩散层 通过在前侧扩散N型杂质而形成比第一扩散层浅的层,并且P型第二扩散层局部形成为环状,以便通过扩散P而暴露在侧面 型杂质,P型杂质扩散到基板的背面,局部地形成P +型第三扩散层,以从第二层向内分布 扩散层并且不暴露于侧面,并且P型第二扩散层和P + +型第三扩散层形成在两级结构中,因此可以有各种特性 改进。
    • 58. 发明授权
    • Wireless communication RF circuit and communication apparatus including the same
    • 无线通信RF电路和包括其的通信设备
    • US07133641B2
    • 2006-11-07
    • US10497513
    • 2003-04-23
    • Tsutomi IekiYoshihiro Yamaguchi
    • Tsutomi IekiYoshihiro Yamaguchi
    • H04B7/00H04B1/40H04Q5/22
    • G06K19/0723H04B1/44H04B1/48
    • A wireless communication RF circuit includes a transmitting-and-receiving antenna, a modulator circuit, an SPST switching circuit, and a demodulator circuit, which are arranged in a sequence. Upon signal reception, the SPST switching circuit is switched ON, and the demodulator circuit extracts a signal wave from a signal received by the antenna and outputs the signal wave to a control circuit. Upon signal transmission, the SPST switching circuit is switched OFF, and the modulator circuit mixes transmission data supplied from the control circuit with a carrier and outputs the carrier to the antenna. Only a single antenna is required. Upon signal reception, the influence of the modulator circuit is negligible. Upon signal transmission, the SPST switching circuit is switched OFF, thus the effect of the demodulator circuit is negligible, which greatly reduces loss.
    • 无线通信RF电路包括按顺序排列的发送和接收天线,调制器电路,SPST切换电路和解调器电路。 信号接收后,SPST切换电路接通,解调电路从天线接收的信号中提取信号波,并将信号波输出到控制电路。 信号传输时,SPST切换电路切换为OFF,调制电路将从控制电路提供的发送数据与载波混合,并将载波输出到天线。 只需要一根天线。 在信号接收时,调制器电路的影响可以忽略不计。 在信号传输时,SPST切换电路关闭,解调电路的影响可以忽略不计,大大降低了损耗。
    • 60. 发明授权
    • Plasma arc machining method
    • 等离子弧加工方法
    • US06914209B2
    • 2005-07-05
    • US10733490
    • 2003-12-10
    • Yoshihiro YamaguchiTetsuya KabataTakahiro Iriyama
    • Yoshihiro YamaguchiTetsuya KabataTakahiro Iriyama
    • B23K10/00
    • B23K10/006
    • Not only damage to a nozzle caused by spatter generated during piercing is prevented but also the deterioration of the nozzle owing to a pilot arc is restrained, whereby the service life of the nozzle is significantly increased. To this end, the plasma torch is positioned at an initial level which is the distance between the plasma torch and a steel plate when generating a plasma arc to start piercing operation and which has been set equal to a cutting level which is the distance between the plasma torch and the steel plate when carrying out cutting operation. After generation of the plasma arc, the plasma torch is immediately raised to a piercing level which is more distant from the steel plate W than the initial level and piercing operation is performed at the piercing level. After completion of the piercing operation, the plasma torch is lowered to the cutting level to start cutting operation. Just after transfer from a pilot arc into a main arc, a pilot current is cut off by turning a transistor off.
    • 不仅防止了在穿刺期间产生的飞溅造成的喷嘴损坏,而且由于引导电弧引起的喷嘴劣化也受到限制,从而喷嘴的使用寿命显着增加。 为此,等离子体焰炬位于等离子体焰炬和钢板之间的距离的初始水平,当等离子体电弧产生等离子体电弧以开始穿孔操作时,等离子体焰炬被设定为等于切割水平 等离子火炬和钢板进行切割操作。 在等离子体电弧产生之后,等离子体焰炬立即升高到与初始水平相比更远离钢板W的穿透水平,并且在穿孔水平进行刺穿操作。 在穿孔操作完成之后,等离子体焰炬降低到切割水平以开始切割操作。 在从导电电弧转移到主电弧之后,通过关闭晶体管来切断导通电流。