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51. 发明授权

US06962876B2 Method for forming a low-k dielectric layer for a semiconductor device 有权
公开(公告)号：US06962876B2
公开(公告)日：2005-11-08
申请号：US10981731
申请日：2004-11-05
申请人： Jae-Young Ahn , Jin-Gyun Kim , Hee-Seok Kim , Jin-Tae No , Sang-Ryol Yang , Sung-Hae Lee , Hong-Suk Kim , Ju-Wan Lim , Young-Seok Kim , Yong-Woo Hyung , Man-Sug Kang
发明人： Jae-Young Ahn , Jin-Gyun Kim , Hee-Seok Kim , Jin-Tae No , Sang-Ryol Yang , Sung-Hae Lee , Hong-Suk Kim , Ju-Wan Lim , Young-Seok Kim , Yong-Woo Hyung , Man-Sug Kang
IPC分类号： C23C16/30 , C23C16/44 , C23C16/455 , H01L21/318 , H01L21/321 , H01L21/44 , H01L21/31 , H01L21/469
CPC分类号： H01L21/0228 , C23C16/30 , C23C16/45531 , H01L21/02274 , H01L21/318 , H01L21/3185 , H01L21/3211
摘要： A method for forming a low-k dielectric layer for a semiconductor device using an ALD process including (a) forming predetermined interconnection patterns on a semiconductor substrate, (b) supplying a first and a second reactive material to a chamber having the substrate therein, thereby adsorbing the first and second reactive materials on a surface of the substrate, (c) supplying a first gas to the chamber to purge the first and second reactive materials that remain unreacted, (d) supplying a third reactive material to the chamber, thereby causing a reaction between the first and second materials and the third reactive material to form a monolayer, (e) supplying a second gas to the chamber to purge the third reactive material that remains unreacted in the chamber and a byproduct; and (f) repeating (b) through (e) a predetermined number of times to form a SiBN ternary layer having a predetermined thickness on the substrate.

52. 发明授权

US06815350B2 Method for forming a thin film using an atomic layer deposition (ALD) process 有权
标题翻译：使用原子层沉积（ALD）工艺形成薄膜的方法
公开(公告)号：US06815350B2
公开(公告)日：2004-11-09
申请号：US10378681
申请日：2003-03-05
申请人： Young-Seok Kim , Yong-Woo Hyung , Man-Sung Kang , Jae-Young Ahn
发明人： Young-Seok Kim , Yong-Woo Hyung , Man-Sung Kang , Jae-Young Ahn
IPC分类号： H01L2131
CPC分类号： H01L21/0228 , C23C16/30 , C23C16/45531 , H01L21/02112 , H01L21/02274 , H01L21/318 , H01L21/3185 , H01L21/3211
摘要： A method for forming a ternary thin film using an atomic layer deposition process includes supplying a first and a second reactive material to a chamber containing a wafer, the first and second reactive materials being adsorbing on a surface of the wafer, supplying a first gas to the chamber to purge the first and second reactive materials that remain unreacted, supplying a third reactive material to the chamber to cause a reaction between the first and second reactive materials and the third reactive material to form a thin film monolayer, supplying a second gas to purge the third reactive material that remains unreacted and a byproduct, and repeating the above steps for forming the thin film monolayer a predetermined number of times to form a ternary thin film having a predetermined thickness on the wafer. Preferably, the ternary thin film is a SiBN film.

53. 发明授权

US09431414B2 Vertical memory devices and methods of manufacturing the same 有权
标题翻译：垂直存储器件及其制造方法
公开(公告)号：US09431414B2
公开(公告)日：2016-08-30
申请号：US14517025
申请日：2014-10-17
申请人： Byong-Hyun Jang , Dong-Chul Yoo , Ki-Hyun Hwang , Phil-Ouk Nam , Jae-Young Ahn
发明人： Byong-Hyun Jang , Dong-Chul Yoo , Ki-Hyun Hwang , Phil-Ouk Nam , Jae-Young Ahn
IPC分类号： H01L27/115 , H01L29/66 , H01L29/792
CPC分类号： H01L27/11565 , H01L27/1158 , H01L29/66833 , H01L29/7926
摘要： Nonvolatile memory devices include at least four cylindrical-shaped channel regions, which extend vertically from portions of a substrate located at respective vertices of at least one rhomboid when viewed in a vertical direction relative to a surface of the substrate. A charge storage layer (e.g., ONO layer) is provided on an outer sidewall of each of the cylindrical-shaped channel regions. In addition, to achieve a high degree of integration, a plurality of vertically-stacked gate electrodes are provided, which extend adjacent each of the cylindrical-shaped channel regions.
摘要翻译：非易失性存储器件包括至少四个圆柱形沟道区域，当从垂直于衬底表面的垂直方向观察时，至少四个圆柱形沟道区域从位于至少一个菱形晶体的相应顶点处的衬底的部分垂直延伸。电荷存储层（例如，ONO层）设置在每个圆柱形沟道区的外侧壁上。此外，为了实现高度的集成，提供了多个垂直堆叠的栅电极，其在每个圆柱形沟道区域附近延伸。

54. 发明授权

US09324730B2 Vertical memory devices and methods of manufacturing the same 有权
标题翻译：垂直存储器件及其制造方法
公开(公告)号：US09324730B2
公开(公告)日：2016-04-26
申请号：US14601496
申请日：2015-01-21
申请人： Phil-Ouk Nam , Dong-Chul Yoo , Bi-O Kim , Jae-Young Ahn , Byong-Hyun Jang , Ki-Hyun Hwang
发明人： Phil-Ouk Nam , Dong-Chul Yoo , Bi-O Kim , Jae-Young Ahn , Byong-Hyun Jang , Ki-Hyun Hwang
IPC分类号： H01L29/792 , H01L27/115 , H01L27/02
CPC分类号： H01L27/11582 , H01L27/0207 , H01L27/11565 , H01L27/1157
摘要： A vertical memory device including a substrate including first regions and a second region; a plurality of channels in the first regions, the plurality of channels extending in a first direction substantially perpendicular to a top surface of the substrate; a charge storage structure on a sidewall of each channel in a second direction substantially parallel to the top surface of the substrate; a plurality of gate electrodes in the first regions, the plurality of gate electrodes arranged on a sidewall of the charge storage structure and spaced apart from each other in the first direction; and a plurality of supporters in the second region, the plurality of supporters spaced apart from each other in a third direction substantially perpendicular to the first direction and the second direction, the plurality of supporters contacting a sidewall of at least one gate electrode.
摘要翻译：一种垂直存储器件，包括：包括第一区域和第二区域的衬底; 所述第一区域中的多个通道，所述多个通道在基本上垂直于所述基板的顶表面的第一方向上延伸; 每个通道的侧壁上的电荷存储结构，其基本上平行于所述基板的顶表面; 所述第一区域中的多个栅极电极，所述多个栅电极设置在所述电荷存储结构的侧壁上，并且在所述第一方向上彼此间隔开; 以及在所述第二区域中的多个支撑件，所述多个支撑件在基本上垂直于所述第一方向和所述第二方向的第三方向上彼此间隔开，所述多个支撑件接触至少一个栅电极的侧壁。

55. 发明授权

US08666426B2 Adaptive transmission device using limited feedback information in a mobile communication system, and a method thereof 有权
标题翻译：在移动通信系统中使用有限反馈信息的自适应传输设备及其方法
公开(公告)号：US08666426B2
公开(公告)日：2014-03-04
申请号：US12096324
申请日：2005-12-19
申请人： Young-Jo Ko , Jae-Young Ahn , Kwang-Soon Kim , Jung-Hyoung Kwon , Keum-Chan Whang
发明人： Young-Jo Ko , Jae-Young Ahn , Kwang-Soon Kim , Jung-Hyoung Kwon , Keum-Chan Whang
IPC分类号： H04W72/00
CPC分类号： H04W72/0453 , H04L5/006 , H04L5/023 , H04L25/0204 , H04L27/2608 , H04W72/085
摘要： The present invention relates to an adaptive transmitting device using limited feedback information in a mobile communication system, and a method thereof. According to an exemplary embodiment of the present invention, when the base station transmits a pilot signal to the terminal, the terminal generates channel information by using the pilot signal, generates additional channel information from the channel information, and transmits the channel information and the additional channel information to the base station. The base station determines band allocation, power allocation, and modulation methods for each use by using received feedback information, and transmits modulated traffic data to the terminal according to the determined methods.
摘要翻译：本发明涉及一种在移动通信系统中使用有限反馈信息的自适应发送装置及其方法。根据本发明的示例性实施例，当基站向终端发送导频信号时，终端通过使用导频信号生成信道信息，从信道信息生成附加信道信息，并发送信道信息和附加信道信道信息到基站。基站通过使用接收到的反馈信息来确定每个使用的频带分配，功率分配和调制方法，并且根据确定的方法向终端发送调制的业务数据。

56. 发明申请

US20140054676A1 VERTICAL TYPE SEMICONDUCTOR DEVICES INCLUDING OXIDATION TARGET LAYERS 有权
标题翻译：垂直型半导体器件，包括氧化目标层
公开(公告)号：US20140054676A1
公开(公告)日：2014-02-27
申请号：US13971347
申请日：2013-08-20
申请人： Phil-Ouk Nam , Jun-Kyu Yang , Byong-Hyun Jang , Ki-Hyun Hwang , Jae-Young Ahn
发明人： Phil-Ouk Nam , Jun-Kyu Yang , Byong-Hyun Jang , Ki-Hyun Hwang , Jae-Young Ahn
IPC分类号： H01L29/792
CPC分类号： H01L27/11582 , H01L27/11519 , H01L27/11524 , H01L27/11556 , H01L27/11565 , H01L27/1157 , H01L29/7889 , H01L29/7926
摘要： A vertical type semiconductor device can include a vertical pillar structure that includes a channel pattern with an outer wall. Horizontal insulating structures can be vertically spaced apart from one another along the vertical pillar structure to define first vertical gaps therebetween at first locations away from the outer wall and to define second vertical gaps therebetween at the outer wall, where the second vertical gaps are wider than the first vertical gaps. Horizontal wordline structures can be conformally located in the first and second vertical gaps between the vertically spaced apart horizontal insulating structures, so that the horizontal wordline structures can be vertically thinner across the first vertical gaps than across the second vertical gaps.
摘要翻译：垂直型半导体器件可以包括垂直柱结构，其包括具有外壁的沟道图案。水平绝缘结构可以沿着垂直柱结构彼此垂直间隔开，以在远离外壁的第一位置处限定第一垂直间隙，并且在外壁处限定第二垂直间隙，其中第二垂直间隙宽于第一垂直间隙。水平字线结构可以共形地位于垂直间隔开的水平绝缘结构之间的第一和第二垂直间隙中，使得水平字线结构可跨越第一垂直间隙而横跨第二垂直间隙。

57. 发明申请

US20130322388A1 DEVICE-TO-DEVICE COMMUNICATION AND TERMINAL RELAY METHOD 审中-公开
标题翻译：器件到器件通信和终端继电器方法
公开(公告)号：US20130322388A1
公开(公告)日：2013-12-05
申请号：US13976202
申请日：2011-12-27
申请人： Jae-Young Ahn , Tae Gyun Noh , Young Jo Ko
发明人： Jae-Young Ahn , Tae Gyun Noh , Young Jo Ko
IPC分类号： H04W76/02
CPC分类号： H04W76/14 , H04W88/04
摘要： Disclosed are a method for checking whether D2D communication between devices for performing D2D communication is possible, and a method for estimating the proximity of devices to base stations and the proximity of devices to one another for reusing wireless resources in device-to-device communication and terminal relay communication. The method according to the present invention may enable the verification of whether D2D communication is possible between devices to establish a D2D connection, and may enable the wireless resources allocated to a cellular link and to other D2D links to be reused. Further, the method of the present invention may enable variations in a link state caused by terminal mobility to be handled, as well as D2D communication between new UEs and D2D communication between a new UE and a legacy UE, to be handled.
摘要翻译：公开了一种用于检查用于执行D2D通信的设备之间的D2D通信是否可能的方法，以及用于估计设备与基站的接近度以及设备彼此接近以便在设备到设备通信中重用无线资源的方法，以及终端中继通信。根据本发明的方法可以使得能够验证在设备之间是否可以建立D2D连接的D2D通信，并且可以使得分配给蜂窝链路的无线资源和其他D2D链路能够被重用。此外，本发明的方法可以使处理由终端移动性引起的链路状态的变化以及新UE之间的D2D通信和新UE与传统UE之间的D2D通信的处理。

58. 发明授权

US08406775B2 Method for selecting beams during initial synchronization process using switched beam, switched beam operation method and initial synchronization using the same 失效
标题翻译：在使用切换光束的初始同步处理中选择光束的方法，切换光束操作方法以及使用其的初始同步
公开(公告)号：US08406775B2
公开(公告)日：2013-03-26
申请号：US11914922
申请日：2005-12-13
申请人： Jae-Young Ahn , Yong-Soo Cho , Hyun-Soo Ko
发明人： Jae-Young Ahn , Yong-Soo Cho , Hyun-Soo Ko
IPC分类号： H04W40/00
CPC分类号： H04B7/0491 , H04B7/0408 , H04B7/0617 , H04L5/023 , H04W16/10 , H04W16/24 , H04W16/28
摘要： A method for selecting beams, a switched beam operation method during an initial synchronization process, and an initial synchronization method using it are provided for selecting beams to minimize the probability of occurrence of interferences between cells by considering a distance between beams within neighboring sectors during an initial synchronization process using switched beams, in an orthogonal frequency division multiplexing (OFDM) cellular system employing a smart antenna. The inventive method comprises the steps of dividing each cell into sectors, and counting the number of fixed beams per cell, and selecting a switched beam for minimizing probability of interference, from fixed beams presenting in a corresponding sector, based on distances between a selected beam and beams of all of adjacent cells and the number of cases to be selected in a subsequent time slot, according to the counted number of the fixed beams existing in each sector.
摘要翻译：提供一种用于选择波束的方法，初始同步过程中的切换波束操作方法以及使用该方法的初始同步方法，用于选择波束以通过考虑在相邻扇区内的波束之间的距离来最小化小区之间干扰发生的概率在使用智能天线的正交频分复用（OFDM）蜂窝系统中使用切换波束的初始同步过程。本发明的方法包括以下步骤：将每个小区划分成扇区，并且对每个小区的固定波束数进行计数，并且根据所选择的波束之间的距离，选择用于最小化相应扇区中呈现的固定波束的干扰概率的切换波束根据存在于每个扇区中的固定光束的数目，所有相邻小区的波束和后续时隙中的选择的个数。

59. 再颁专利

USRE44092E1 Apparatus and method for adaptively modulating signal by using layered time-space detector used in MIMO system 有权
标题翻译：利用MIMO系统中分层时空检测器对信号进行自适应调制的装置和方法
公开(公告)号：USRE44092E1
公开(公告)日：2013-03-19
申请号：US12949425
申请日：2010-11-18
申请人： Young-Doo Kim , Inhyoung Kim , Heejung Yu , Jihoon Choi , Taehyun Jeon , Jae-Young Ahn , Yong-Hoon Lee
发明人： Young-Doo Kim , Inhyoung Kim , Heejung Yu , Jihoon Choi , Taehyun Jeon , Jae-Young Ahn , Yong-Hoon Lee
IPC分类号： H04B7/02
CPC分类号： H04B7/0891 , H04B7/0417 , H04B7/0626 , H04B7/0697 , H04L1/0003 , H04L1/0656 , H04L5/0007 , H04L5/0023 , H04L5/0028 , H04L5/0046 , H04L5/006 , H04W52/42
摘要： An apparatus for adaptively modulating/demodulating signals in a multi-input multi-output (MIMO) system having a layered time-space architecture detector and a method thereof is disclosed. The apparatus includes: a bit and power allocation information calculator for deciding an equivalent channel gain in a reverse order of Vertical-Bell laboratories Space Time (V-BLAST) based on MIMO channel information feedbacked from a receiver and determining the number of bits and transmission power to be transmitted to each transmitting antenna by using the equivalent channel gain; and adaptive modulation means for modulating signal of each layer with corresponding modulation method based on the determined number of bits and transmitting power, controlling the transmitting power and transmitting the adaptively modulated signal through each transmitting antenna. The present invention can improve performance without increase of implementation complexity and easily expand to MIMO-OFDM system by adaptively modulating and demodulating signals in reverse order of conventional V-BLAST detection method.
摘要翻译：公开了一种用于在具有分层时空架构检测器及其方法的多输入多输出（MIMO）系统中自适应地调制/解调信号的装置。该装置包括：位和功率分配信息计算器，用于基于从接收机反馈的MIMO信道信息来确定垂直 - 贝尔实验室空时（V-BLAST）的相反顺序的等效信道增益，并确定比特数和传输次数通过使用等效信道增益发送到每个发射天线的功率; 以及自适应调制装置，用于根据所确定的比特数和发送功率，通过相应的调制方法对每一层的信号进行调制，控制发送功率，并通过每个发送天线发送自适应调制信号。本发明可以通过以常规V-BLAST检测方法的相反顺序自适应调制和解调信号，而不增加实现复杂度并且容易地扩展到MIMO-OFDM系统。

60. 发明申请

US20130032878A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130032878A1
公开(公告)日：2013-02-07
申请号：US13560022
申请日：2012-07-27
申请人： Bi-O Kim , Byong-Ju Kim , Jung-Geun Jee , Jin-Gyun Kim , Jae-Young Ahn , Ki-Hyun Hwang
发明人： Bi-O Kim , Byong-Ju Kim , Jung-Geun Jee , Jin-Gyun Kim , Jae-Young Ahn , Ki-Hyun Hwang
IPC分类号： H01L29/78 , H01L29/02
CPC分类号： H01L27/1157 , H01L27/11582 , H01L29/105
摘要： According to example embodiments, a semiconductor device includes horizontal patterns stacked on a substrate. The horizontal patterns define an opening through the horizontal patterns. A first core pattern is in the opening. A second core pattern is in the opening on the first core pattern. A first active pattern is between the first core pattern and the horizontal patterns. A second active pattern containing a first element is between the second core pattern and the horizontal patterns. The second active pattern contains the first element at a higher concentration than a concentration of the first element in the second core pattern.
摘要翻译：根据示例性实施例，半导体器件包括堆叠在衬底上的水平图案。水平图案通过水平图案定义开口。第一个核心模式是在开幕。第一个核心模式是第一个核心模式的开放。第一活动模式在第一芯图案和水平图案之间。包含第一元件的第二活动图案位于第二芯图案和水平图案之间。第二活性图案含有比第二芯图案中的第一元素的浓度高的浓度的第一元素。

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