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1. 发明授权

US06815350B2 Method for forming a thin film using an atomic layer deposition (ALD) process 有权
标题翻译：使用原子层沉积（ALD）工艺形成薄膜的方法
公开(公告)号：US06815350B2
公开(公告)日：2004-11-09
申请号：US10378681
申请日：2003-03-05
申请人： Young-Seok Kim , Yong-Woo Hyung , Man-Sung Kang , Jae-Young Ahn
发明人： Young-Seok Kim , Yong-Woo Hyung , Man-Sung Kang , Jae-Young Ahn
IPC分类号： H01L2131
CPC分类号： H01L21/0228 , C23C16/30 , C23C16/45531 , H01L21/02112 , H01L21/02274 , H01L21/318 , H01L21/3185 , H01L21/3211
摘要： A method for forming a ternary thin film using an atomic layer deposition process includes supplying a first and a second reactive material to a chamber containing a wafer, the first and second reactive materials being adsorbing on a surface of the wafer, supplying a first gas to the chamber to purge the first and second reactive materials that remain unreacted, supplying a third reactive material to the chamber to cause a reaction between the first and second reactive materials and the third reactive material to form a thin film monolayer, supplying a second gas to purge the third reactive material that remains unreacted and a byproduct, and repeating the above steps for forming the thin film monolayer a predetermined number of times to form a ternary thin film having a predetermined thickness on the wafer. Preferably, the ternary thin film is a SiBN film.

2. 发明申请

US20050148201A1 Method for forming a low-k dielectric layer for a semiconductor device 有权
标题翻译：用于形成半导体器件的低k电介质层的方法
公开(公告)号：US20050148201A1
公开(公告)日：2005-07-07
申请号：US10981731
申请日：2004-11-05
申请人： Jae-Young Ahn , Jin-Gyun Kim , Hee-Seok Kim , Jin-Tae No , Sang-Ryol Yang , Sung-Hae Lee , Hong-Suk Kim , Ju-Wan Lim , Young-Seok Kim , Yong-Woo Hyung , Man-Sug Kang
发明人： Jae-Young Ahn , Jin-Gyun Kim , Hee-Seok Kim , Jin-Tae No , Sang-Ryol Yang , Sung-Hae Lee , Hong-Suk Kim , Ju-Wan Lim , Young-Seok Kim , Yong-Woo Hyung , Man-Sug Kang
IPC分类号： C23C16/30 , C23C16/44 , C23C16/455 , H01L21/318 , H01L21/321 , H01L21/44
CPC分类号： H01L21/0228 , C23C16/30 , C23C16/45531 , H01L21/02274 , H01L21/318 , H01L21/3185 , H01L21/3211
摘要： A method for forming a low-k dielectric layer for a semiconductor device using an ALD process including (a) forming predetermined interconnection patterns on a semiconductor substrate, (b) supplying a first and a second reactive material to a chamber having the substrate therein, thereby adsorbing the first and second reactive materials on a surface of the substrate, (c) supplying a first gas to the chamber to purge the first and second reactive materials that remain unreacted, (d) supplying a third reactive material to the chamber, thereby causing a reaction between the first and second materials and the third reactive material to form a monolayer, (e) supplying a second gas to the chamber to purge the third reactive material that remains unreacted in the chamber and a byproduct; and (f) repeating (b) through (e) a predetermined number of times to form a SiBN ternary layer having a predetermined thickness on the substrate.
摘要翻译：一种用于使用ALD工艺形成用于半导体器件的低k电介质层的方法，包括（a）在半导体衬底上形成预定的互连图案，（b）向其中具有衬底的室提供第一和第二反应性材料，从而将第一和第二反应性材料吸附在衬底的表面上，（c）向腔室供应第一气体以清除保留未反应的第一和第二反应性材料，（d）向室提供第三反应性材料，从而引起所述第一和第二材料和所述第三反应性材料之间的反应以形成单层，（e）向所述室供应第二气体以吹扫在所述室中保留未反应的第三反应性材料和副产物; 和（f）重复（b）至（e）预定次数以在基板上形成具有预定厚度的SiBN三元层。

3. 发明授权

US06740977B2 Insulating layers in semiconductor devices having a multi-layer nanolaminate structure of SiNx thin film and BN thin film and methods for forming the same 失效
标题翻译：具有SiNx薄膜和BN薄膜的多层纳米层状结构的半导体器件中的绝缘层及其形成方法
公开(公告)号：US06740977B2
公开(公告)日：2004-05-25
申请号：US10422283
申请日：2003-04-24
申请人： Jae-Young Ahn , Yong-Woo Hyung , Young-Seok Kim , Man-Sug Kang
发明人： Jae-Young Ahn , Yong-Woo Hyung , Young-Seok Kim , Man-Sug Kang
IPC分类号： H01L2348
CPC分类号： H01L21/022 , C23C16/342 , C23C16/345 , C23C16/45529 , C23C16/45536 , H01L21/02112 , H01L21/0217 , H01L21/0228 , H01L21/28185 , H01L21/28202 , H01L21/318 , H01L21/3185 , H01L21/3211 , H01L21/76828 , H01L21/76832 , H01L23/3192 , H01L23/53295 , H01L29/511 , H01L29/518 , H01L2924/0002 , H01L2924/19041 , H01L2924/00
摘要： The present invention discloses a novel insulating layer for use in semiconductor devices, the insulating layer having a multi-layer nanolaminate structure consisting of alternating boron nitride thin films and silicon nitride thin films, each of a controlled, desired thickness, together with methods for forming the same. The insulating layer of the present invention has a multi-layer nanolaminate structure consisting of alternating boron nitride thin films and silicon nitride thin filmsformed by the steps of: (a) depositing a silicon nitride thin film on a wafer, (b) depositing a boron nitride thin film on the silicon nitride thin film, and (c) forming the multi-layer nanolaminate thin film by alternately repeating steps (a) and (b).
摘要翻译：本发明公开了一种用于半导体器件的新型绝缘层，该绝缘层具有由交替的氮化硼薄膜和氮化硅薄膜组成的多层纳米层状结构，每个都具有可控制的期望厚度，以及形成方法本发明的绝缘层具有由交替的氮化硼薄膜和氮化硅薄膜组成的多层纳米层状结构，其形成步骤如下：（a）在晶片上沉积氮化硅薄膜，（b）在氮化硅薄膜上沉积氮化硼薄膜，（c）通过交替重复步骤（a）和（b）形成多层纳米级氨基酸盐薄膜。

4. 发明授权

US06962876B2 Method for forming a low-k dielectric layer for a semiconductor device 有权
公开(公告)号：US06962876B2
公开(公告)日：2005-11-08
申请号：US10981731
申请日：2004-11-05
申请人： Jae-Young Ahn , Jin-Gyun Kim , Hee-Seok Kim , Jin-Tae No , Sang-Ryol Yang , Sung-Hae Lee , Hong-Suk Kim , Ju-Wan Lim , Young-Seok Kim , Yong-Woo Hyung , Man-Sug Kang
发明人： Jae-Young Ahn , Jin-Gyun Kim , Hee-Seok Kim , Jin-Tae No , Sang-Ryol Yang , Sung-Hae Lee , Hong-Suk Kim , Ju-Wan Lim , Young-Seok Kim , Yong-Woo Hyung , Man-Sug Kang
IPC分类号： C23C16/30 , C23C16/44 , C23C16/455 , H01L21/318 , H01L21/321 , H01L21/44 , H01L21/31 , H01L21/469
CPC分类号： H01L21/0228 , C23C16/30 , C23C16/45531 , H01L21/02274 , H01L21/318 , H01L21/3185 , H01L21/3211
摘要： A method for forming a low-k dielectric layer for a semiconductor device using an ALD process including (a) forming predetermined interconnection patterns on a semiconductor substrate, (b) supplying a first and a second reactive material to a chamber having the substrate therein, thereby adsorbing the first and second reactive materials on a surface of the substrate, (c) supplying a first gas to the chamber to purge the first and second reactive materials that remain unreacted, (d) supplying a third reactive material to the chamber, thereby causing a reaction between the first and second materials and the third reactive material to form a monolayer, (e) supplying a second gas to the chamber to purge the third reactive material that remains unreacted in the chamber and a byproduct; and (f) repeating (b) through (e) a predetermined number of times to form a SiBN ternary layer having a predetermined thickness on the substrate.

5. 发明申请

US20140347776A1 PACKAGE MODULE OF BATTERY PROTECTION CIRCUIT 有权
标题翻译：电池保护电路封装模块
公开(公告)号：US20140347776A1
公开(公告)日：2014-11-27
申请号：US14351321
申请日：2012-08-20
申请人： Hyeok-Hwi Na , Young-Seok Kim , Sang-Hoon Ahn , Sung-Beum Park , Seung-Wook Park , Hyun-Mok Cho , Sun-Bok Park , Jae-Goo Park , Ho-Suk Hwang
发明人： Hyeok-Hwi Na , Young-Seok Kim , Sang-Hoon Ahn , Sung-Beum Park , Seung-Wook Park , Hyun-Mok Cho , Sun-Bok Park , Jae-Goo Park , Ho-Suk Hwang
IPC分类号： H02J7/00 , H02H7/18 , H02H3/08 , H02H1/00
CPC分类号： H02J7/0029 , H01L2224/48145 , H01L2224/49111 , H01L2924/19105 , H01M2/0217 , H01M2/0473 , H01M2/34 , H01M10/0525 , H01M10/4257 , H01M2010/4271 , H01M2200/00 , H01M2200/103 , H01M2200/106 , H02H1/0038 , H02H3/085 , H02H7/18 , Y02P70/54 , H01L2924/00012
摘要： The present invention pertains to a package module of a battery protection circuit, and the package module of the battery protection circuit according to the present invention comprises: a first internal connection terminal area and a second internal connection terminal area, which are respectively disposed at both edge parts thereof, and in which first and second internal connection terminals connected to a battery can provided with a bare cell are respectively disposed; an external connection terminal area, which is adjacent to the first internal connection terminal area, and in which a plurality of external connection terminals are disposed; and a protection circuit area comprising a device area in which a plurality of passive devices forming the battery protection circuit are disposed and a chip area, which is adjacent to the device area, and in which a protection IC and a dual FET chip forming the battery protection circuit are disposed, are disposed between the external connection terminal area and the second internal connection terminal area, and has a packaged structure to expose the plurality of external connection terminals on the upper surface thereof and expose the first internal connection terminal and the second internal connection terminal on the lower surface thereof. According to the present invention, a manufacturing process is minimized when compared with existing methods requiring a separate module manufacturing process, and a battery pack is easily formed and is able to be miniaturized and integrated.
摘要翻译：本发明涉及电池保护电路的封装模块，根据本发明的电池保护电路的封装模块包括：第一内部连接端子区域和第二内部连接端子区域，分别设置在两个分别设置有与电池连接的第一和第二内部连接端子可以设置有裸电池的边缘部分，外部连接端子区域，与第一内部连接端子区域相邻，并且其中设置有多个外部连接端子; 以及保护电路区域，包括其中设置有形成电池保护电路的多个无源器件的器件区域和与器件区域相邻的芯片区域，并且其中形成电池的保护IC和双FET芯片保护电路设置在外部连接端子区域和第二内部连接端子区域之间，并且具有用于暴露其上表面上的多个外部连接端子的封装结构，并露出第一内部连接端子和第二内部连接端子连接端子在其下表面。根据本发明，与需要单独的模块制造工艺的现有方法相比，制造工艺最小化，并且电池组容易形成并且能够被小型化和集成。

6. 发明授权

US08565813B2 Apparatus and method for amplifying power in mobile terminal 有权
标题翻译：移动终端放大功率的装置和方法
公开(公告)号：US08565813B2
公开(公告)日：2013-10-22
申请号：US13150523
申请日：2011-06-01
申请人： Young-Seok Kim
发明人： Young-Seok Kim
IPC分类号： H04W88/06
CPC分类号： H03F3/24 , H03F1/56 , H03F3/189 , H03F2200/387
摘要： A transmission apparatus and a method thereof in a mobile terminal are provided. More particularly, an apparatus and a method for securing a space of a mobile terminal and reducing manufacturing costs by integrating power amplifying units into one module in the mobile terminal that supports a multi-mode are provided. The power amplifier of a mobile terminal includes a first amplifying unit and a second amplifying unit. The first amplifying unit defines a frequency of a GSM quad band as a low frequency band and a high frequency band, and then amplifies a signal of the low frequency band of the GSM quad band. The second amplifying unit amplifies a signal of the high frequency band of the GSM quad band and a signal of a TD-SCDMA band.
摘要翻译：提供了一种移动终端中的发送装置及其方法。更具体地，提供了一种用于通过将功率放大单元集成到支持多模式的移动终端中的一个模块中来确保移动终端的空间并降低制造成本的装置和方法。移动终端的功率放大器包括第一放大单元和第二放大单元。第一放大单元将GSM四频带的频率定义为低频带和高频带，然后放大GSM四频带的低频带的信号。第二放大单元放大GSM四频带的高频信号和TD-SCDMA频带的信号。

7. 发明授权

US08441992B2 Apparatus and method for supporting vertical handover on a wireless communication system 有权
公开(公告)号：US08441992B2
公开(公告)日：2013-05-14
申请号：US12286196
申请日：2008-09-29
申请人： Eui-Seok Hwang , Jeong-Jae Won , Young-Seok Kim , Su-Won Lee , Xiaoyu Liu
发明人： Eui-Seok Hwang , Jeong-Jae Won , Young-Seok Kim , Su-Won Lee , Xiaoyu Liu
IPC分类号： H04W4/00
CPC分类号： H04W36/04
摘要： A broadband wireless communication system is provided. An apparatus for an information server (IS) comprises an event module for determining whether updating the network information of at least one access network (AN) is needed, a generator module for generating at least one Information_Get_Request packet for requesting the network information of the at least one AN when the updating is needed, a communication module for transmitting at least one Information_Get_Request packet to the at least one AN, and a database (DB) module for storing network information within an Information_Get_Response packet received from the at least one AN.

8. 发明授权

US08324571B2 Apparatus and method for measuring semiconductor device 有权
标题翻译：半导体器件测量装置及方法
公开(公告)号：US08324571B2
公开(公告)日：2012-12-04
申请号：US12713261
申请日：2010-02-26
申请人： Young-Seok Kim , Jong-Sun Peak , Young-Nam Kim , Hyung-Suk Cho , Sun-Jin Kang , Bu-Dl Yoo
发明人： Young-Seok Kim , Jong-Sun Peak , Young-Nam Kim , Hyung-Suk Cho , Sun-Jin Kang , Bu-Dl Yoo
IPC分类号： G01N23/20
CPC分类号： H01L22/20 , H01L22/12
摘要： An apparatus for measuring a semiconductor device is provided. The apparatus includes a beam emitter configured to irradiate an electron beam onto a sample having the entire region composed of a critical dimension (CD) region, which is formed by etching or development, and a normal region connected to the CD region, and an analyzer electrically connected to the beam emitter, and configured to select and set a wavelength range of a region in which a difference in reflectance between the CD region and the normal region occurs, after obtaining reflectance from the electron beam reflected by a surface of the sample according to the wavelength of the electron beam. A method of measuring a semiconductor device using the measuring apparatus is also provided. Therefore, it is possible to minimize a change in reflectance due to the thickness and properties of the semiconductor device, and set a wavelength range to monitor a specific wavelength, thereby accurately measuring and analyzing a CD value of a measurement part of the semiconductor device.
摘要翻译：提供了一种用于测量半导体器件的设备。该装置包括：射束发射器，被配置为将电子束照射到具有由蚀刻或显影形成的临界尺寸（CD）区域和连接到CD区域的法线区域构成的整个区域的样品上;以及分析器电连接到射束发射器，并且被配置为在从由样品表面反射的电子束获得反射率之后，选择和设置发生CD区域和法线区域之间的反射率差的区域的波长范围，到电子束的波长。还提供了使用测量装置测量半导体器件的方法。因此，可以使半导体器件的厚度和特性的反射率变化最小化，并且设定波长范围来监视特定波长，从而精确地测量和分析半导体器件的测量部分的CD值。

9. 发明授权

US08134709B2 Method of aligning a substrate 有权
标题翻译：对准衬底的方法
公开(公告)号：US08134709B2
公开(公告)日：2012-03-13
申请号：US12277346
申请日：2008-11-25
申请人： Jong-Sun Peak , Young-Seok Kim
发明人： Jong-Sun Peak , Young-Seok Kim
IPC分类号： G01B11/00
CPC分类号： G03F9/7046 , H01L23/544 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： In a method of aligning a substrate, a first alignment mark in a single shot region on the substrate may be identified. A second alignment mark in the single shot region may be selectively identified in accordance with the identification of the first alignment mark. The substrate may then be aligned using identified any one of the first alignment mark and the second alignment mark. Thus, although the substrate may be accurately aligned, the accurately aligned substrate may not be determined to be misaligned.
摘要翻译：在对准衬底的方法中，可以识别衬底上的单次注射区域中的第一对准标记。可以根据第一对准标记的识别来选择性地识别单个拍摄区域中的第二对准标记。然后可以使用标识的第一对准标记和第二对准标记中的任何一个来对准衬底。因此，尽管衬底可以精确对准，但是可能不会确定精确对准的衬底不对准。

10. 发明申请

US20120008144A1 Method of Aligning a Substrate 有权
标题翻译：对准基板的方法
公开(公告)号：US20120008144A1
公开(公告)日：2012-01-12
申请号：US13237509
申请日：2011-09-20
申请人： Young-Seok Kim , Jong-Sun Peak
发明人： Young-Seok Kim , Jong-Sun Peak
IPC分类号： G01B11/00
CPC分类号： G03F9/7046 , H01L23/544 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： In a method of aligning a substrate, a first alignment mark and a second alignment mark in a first shot region on the substrate may be sequentially identified. The substrate may be primarily aligned using identified any one of the first alignment mark and the second alignment mark. A used alignment mark and an unused alignment mark during the primary alignment process of the first alignment mark and the second alignment mark in a second shot region on the substrate may be sequentially identified. The substrate may be secondarily aligned using identified any one of the used alignment mark and the unused alignment mark during the primary alignment process. Thus, a time for identifying the alignment mark may be reduced.
摘要翻译：在对准衬底的方法中，可以顺序地识别衬底上的第一射出区域中的第一对准标记和第二对准标记。可以使用所识别的第一对准标记和第二对准标记中的任一个来主要对准衬底。可以顺序地识别在基板上的第二照射区域中的第一对准标记和第二对准标记的主对准处理期间使用的对准标记和未使用的对准标记。可以在主对准过程期间使用所使用的对准标记和未使用的对准标记中的任何一个来二次对准衬底。因此，可以减少用于识别对准标记的时间。

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