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    • 52. 发明授权
    • Method and apparatus for dechucking a substrate
    • 剥离基板的方法和装置
    • US06676761B2
    • 2004-01-13
    • US10308385
    • 2002-12-02
    • Quanyuan ShangWilliam R. HarshbargerRobert L. GreeneIchiro Shimizu
    • Quanyuan ShangWilliam R. HarshbargerRobert L. GreeneIchiro Shimizu
    • H01L2100
    • H01L21/68742C23C16/458
    • A substrate support assembly and method for dechucking a substrate is provided. In one embodiment, a support assembly includes a substrate support having a support surface, a first set of lift pins and one or more other lift pins movably disposed through the substrate support. The first set of lift pins and the one or more lift pins project from the support surface when the pins are in an actuated position. When in the actuated position, the first set of lift pins project a longer distance from the support surface than the one or more other lift pins. In another aspect of the invention, a method for dechucking a substrate from a substrate support is provided. In one embodiment, the method includes the steps of projecting a first set of lift pins a first distance above a surface of a substrate support, and projecting a second set of lift pins a second distance above the surface of the substrate support that is less than the first distance.
    • 提供了一种用于对基板进行脱扣的基板支撑组件和方法。 在一个实施例中,支撑组件包括具有支撑表面的基板支撑件,第一组提升销和可移动地设置穿过基板支撑件的一个或多个其他提升销。 当销处于致动位置时,第一组提升销和一个或多个提升销从支撑表面突出。 当处于致动位置时,第一组提升销与支撑表面比一个或多个其他提升销突出较长的距离。 在本发明的另一方面,提供了一种用于从基板支撑件去除基板的方法。 在一个实施例中,该方法包括以下步骤:将第一组提升销投影在衬底支撑件的表面之上的第一距离处,并且将第二组提升销投影在衬底支撑件的表面上方的第二距离处,该第二组提升销小于 第一个距离。
    • 54. 发明授权
    • Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
    • 使用远程等离子体源清洗技术的氮化硅沉积中白色粉末还原的装置和方法
    • US06468601B1
    • 2002-10-22
    • US09523538
    • 2000-03-10
    • Quanyuan ShangRobert McCormick RobertsonKam S. LawDan Maydan
    • Quanyuan ShangRobert McCormick RobertsonKam S. LawDan Maydan
    • B05D306
    • C23C16/4405
    • An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber. The apparatus includes a deposition chamber having walls; means for heating the walls, the means thermally coupled to the walls; a liner covering a substantial portion of the walls; a remote chamber disposed outside of the chamber; an activation source adapted to deliver energy into the remote chamber; a first conduit for flowing a precursor gas from a remote gas supply into the remote chamber where it is activated by the activation source to form a reactive species; and a second conduit for flowing the reactive species from the remote chamber into the deposition chamber.
    • 用于在用于沉积氮化硅的处理室中减少白色粉末的生产的装置和方法。 该方法的步骤包括加热处理室壁的至少一部分; 提供覆盖所述处理室的壁的主要部分的衬垫; 提供连接到处理室内部的远程室; 导致远程室中的清洁气体的等离子体; 并将清洁气体的等离子体的一部分流入处理室。 该装置包括具有壁的沉积室; 用于加热壁的装置,热耦合到壁的装置; 覆盖壁的大部分的衬垫; 设置在室外的远程室; 活化源,其适于将能量输送到所述远程室中; 用于将前体气体从远程气体供给流入远程室的第一导管,其中激活源被激活以形成反应性物质; 以及用于使反应物质从远程室流入沉积室的第二导管。
    • 57. 发明申请
    • PHOTOVOLTAIC CONTACT AND WIRING FORMATION
    • 光伏接触和接线形成
    • US20070148336A1
    • 2007-06-28
    • US11556776
    • 2006-11-06
    • Robert BachrachQuanyuan ShangYan Ye
    • Robert BachrachQuanyuan ShangYan Ye
    • B05D5/12H05K3/00C23C16/00
    • C23C14/35C23C14/564H01L31/022425H01L31/18H05K3/048Y02E10/50
    • A method and apparatus for fabricating a solar cell and forming metal contact is disclosed. Solar cell contact and wiring is formed by depositing a thin film stack of a first metal material and a second metal material as an initiation layer or seed layer for depositing a bulk metal layer in conjunction with additional sheet processing, photolithography, etching, cleaning, and annealing processes. In one embodiment, the thin film stack for forming metal silicide with reduced contact resistance over the sheet is deposited by sputtering or physical vapor deposition. In another embodiment, the bulk metal layer for forming metal lines and wiring is deposited by sputtering or physical vapor deposition. In an alternative embodiment, electroplating or electroless deposition is used to deposit the bulk metal layer.
    • 公开了一种用于制造太阳能电池和形成金属接触的方法和装置。 通过沉积第一金属材料和第二金属材料的薄膜堆叠来形成太阳能电池接触和布线,所述第一金属材料和第二金属材料作为起始层或籽晶层,用于结合额外的片材处理,光刻,蚀刻,清洁和 退火工艺。 在一个实施例中,通过溅射或物理气相沉积沉积用于形成具有降低的片上接触电阻的金属硅化物的薄膜叠层。 在另一个实施例中,通过溅射或物理气相沉积沉积用于形成金属线和布线的体金属层。 在替代实施例中,使用电镀或无电沉积来沉积体金属层。