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    • 54. 发明授权
    • Systems and methods for integration of heterogeneous circuit devices
    • 用于集成异构电路器件的系统和方法
    • US07352047B2
    • 2008-04-01
    • US10727692
    • 2003-12-04
    • Jingkuang ChenYi Su
    • Jingkuang ChenYi Su
    • H01L21/00
    • B81C1/00246B81B2201/047B81C2203/0735H01L21/823493H01L21/823892H01L21/84H01L27/0617H01L27/1203
    • A heterogeneous device comprises a substrate and a plurality of heterogeneous circuit devices defined in the substrate. In embodiments, a plurality of heterogeneous circuit devices are integrated by successively masking and ion implanting the substrate. The heterogeneous device may further comprise at least one microelectromechanical system-based element and/or at least one photodiode. In embodiments, the heterogeneous circuit devices comprise at least one CMOS transistor and at least one DMOS transistor. In embodiments, the substrate comprises a layer of silicon or a layer of p-type silicon. In other embodiments, the substrate comprises a silicon-on-insulator wafer comprising a single-crystal-silicon layer or a single-crystal-P-silicon layer, a substrate and an insulator layer therebetween.
    • 异质器件包括衬底和限定在衬底中的多个异质电路器件。 在实施例中,通过依次掩蔽和离子注入衬底来整合多个异构电路器件。 异质装置还可以包括至少一个基于微机电系统的元件和/或至少一个光电二极管。 在实施例中,异质电路器件包括至少一个CMOS晶体管和至少一个DMOS晶体管。 在实施例中,衬底包括硅层或p型硅层。 在其它实施例中,衬底包括绝缘体上硅晶片,其包括单晶硅层或单晶P硅层,衬底及其间的绝缘体层。
    • 55. 发明授权
    • High aspect ratio trench isolation process for surface micromachined sensors and actuators
    • 表面微加工传感器和执行器的高纵横比沟槽隔离工艺
    • US06573154B1
    • 2003-06-03
    • US09696082
    • 2000-10-26
    • Uppili SridharRanganathan NagarajanYu Bo MiaoYi Su
    • Uppili SridharRanganathan NagarajanYu Bo MiaoYi Su
    • H01L2176
    • B81C1/00619
    • A process for fabricating an integrated circuit sensor/actuator is described. High aspect ratio deep silicon beams are formed by a process of deep trench etch and silicon undercut release etch by using oxide spacers to protect the silicon beam sidewalls during release etch. An oxide layer is then formed, followed by deposition of a controlled thickness of polysilicon which is then thermally oxidized. The polysilicon layer inside the trenches gets fully oxidized resulting in void-free trench isolation. This process creates a silicon island or beam on three sides leaving the third side for interfacing with the sensor/actuator beams. The sensor/actuator is formed by a similar process of deep trench etch and release etch process on the same substrate. These suspended beams of the sensors and actuators are bridged with the silicon islands from the fourth side. The above process finally results in suspended silicon beams connected to electrically isolated silicon islands.
    • 描述了一种用于制造集成电路传感器/致动器的工艺。 通过使用氧化物间隔物的深沟槽蚀刻和硅蚀刻蚀刻蚀刻的工艺形成高纵横比深硅光束,以在释放蚀刻期间保护硅束侧壁。 然后形成氧化物层,然后沉积受控厚度的多晶硅,然后热氧化。 沟槽内的多晶硅层被完全氧化,导致无空隙的沟槽隔离。 该过程在三侧产生硅岛或光束,离开第三侧以与传感器/致动器光束接口。 传感器/致动器通过在同一衬底上的深沟槽蚀刻和释放蚀刻工艺的类似工艺形成。 这些传感器和致动器的悬挂梁与第四侧的硅岛桥接。 上述过程最终导致连接到电隔离硅岛的悬浮硅束。
    • 58. 发明申请
    • SIDE LOBE SUPPRESSION METHOD FOR SYNTHETIC APERTURE RADAR (SAR) IMAGE
    • 合成孔径雷达(SAR)图像的侧面抑制方法
    • US20130050017A1
    • 2013-02-28
    • US13395821
    • 2011-04-29
    • Yi SuHuaijun WangYu LiMin Lu
    • Yi SuHuaijun WangYu LiMin Lu
    • G01S13/90
    • G01S13/90G01S7/2813G01S13/904G06T5/10G06T5/50G06T2207/10044G06T2207/20224
    • A side lobe suppression method for an SAR image based on the deformation of a spatial spectral support area is provided. Using the relationship between the spatial spectral support area distribution of an SAR system and an impulse response, the trend of a side lobe in the impulse response is changed by deforming the spatial spectral support area; two SAR images with different side lobe trends are obtained by calculation; the difference information of the side lobe trends between the two SAR images is finally utilized to realize the mutual separation of a target main lobe and the side lobe, thus realizing effective side lobe suppression. The method has an obvious effect on side lobe suppression without losing image resolution, at the same time, can be realized simply, has less calculation amount, is not sensitive to noise, is also very convenient to implement, and can be directly used for processing an original SAR image.
    • 提供了一种基于空间光谱支持区域的变形的SAR图像的旁瓣抑制方法。 利用SAR系统的空间谱支持区域分布与脉冲响应之间的关系,通过使空间谱支持区域变形来改变脉冲响应中旁瓣的趋势; 通过计算获得具有不同旁瓣趋势的两个SAR图像; 最终利用两个SAR图像之间的旁瓣趋势的差异信息来实现目标主瓣和旁瓣的相互分离,从而实现有效的旁瓣抑制。 该方法对旁瓣抑制有明显的影响,不失去图像分辨率,同时可以简单实现,计算量少,对噪声不敏感,实施起来也非常方便,可直接用于加工 原始的SAR图像。