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51. 发明专利

JPH0265021A CONTACT MATERIAL FOR VACUUM VALVE 失效
公开(公告)号：JPH0265021A
公开(公告)日：1990-03-05
申请号：JP21363188
申请日：1988-08-30
申请人： TOSHIBA CORP
发明人： SEKIGUCHI SHIGEAKI , OKUTOMI ISAO
IPC分类号： H01H33/66 , H01H1/02
摘要： PURPOSE:To aim at lowering the cut current by selecting a specific tungsten carbide particle in a contact material made of the eutectic crystal of copper silver, cobalt and tungsten carbide. CONSTITUTION:The smaller a tungsten carbide particle, an arc-resistant material in contact material, is, the smaller its cut value is, but from the economical point of view, the easiness in making and the effect are correlative so that it is important to select an effective particle size distribton. The tungsten carbide made of more than 80 percent of the particle with its diameter being below 0.8mum and less than 10 percent of the particle with its diameter being over 1mum is selected. The cut current value can be thus considerably lowered.

52. 发明专利

JPS6386836A CONTACT ALLOY FOR VACUUM VALVE 失效
公开(公告)号：JPS6386836A
公开(公告)日：1988-04-18
申请号：JP23231186
申请日：1986-09-30
申请人： TOSHIBA CORP
发明人： OKUTOMI ISAO , CHIBA SEIJI , SEKIGUCHI SHIGEAKI , OKAWA MIKIO
IPC分类号： C22C5/06 , C22C9/00 , C22C27/06 , C22C30/00 , C22C30/02
摘要： PURPOSE:To stabilize contact-resistance characteristics and temperature-rise characteristics, by incorporating a high-conductivity material of Cu, etc., and prescribed percentages of Fe, Co, and Cr and by allowing specific amounts of Cr to enter into solid solution in the above high-conductivity material. CONSTITUTION:This contact alloy for vacuum valve is formed of a high- conductivity material composed of Cu and/or Ag and a Cr-base arc-resistant material. Further, the above Cr-base arc-resistant material consists of

53. 发明专利

JPS62170120A MANUFACTURE OF CONTACT ALLOY FOR VACUUM BULB 失效
公开(公告)号：JPS62170120A
公开(公告)日：1987-07-27
申请号：JP1048586
申请日：1986-01-21
申请人： TOSHIBA CORP
发明人： OKUTOMI ISAO , SEKIGUCHI SHIGEAKI , CHIBA SEIJI
IPC分类号： H01H1/023 , H01H1/02 , H01H33/66

54. 发明专利

JPS6276219A CONTACT MATERIAL FOR VACUUM BULB 失效
公开(公告)号：JPS6276219A
公开(公告)日：1987-04-08
申请号：JP21664785
申请日：1985-09-30
申请人： TOSHIBA CORP
发明人： OKUTOMI ISAO , CHIBA SEIJI , SEKIGUCHI SHIGEAKI
IPC分类号： H01H1/023 , C22C5/06 , C22C9/00 , C22C27/06 , H01B1/02 , H01H1/02 , H01H33/66

55. 发明专利

JP2001273842A CONTACT FOR VACUUM SWITCH AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2001273842A
公开(公告)日：2001-10-05
申请号：JP2000086002
申请日：2000-03-27
申请人： SHIBAFU ENGINEERING CORP , TOSHIBA CORP , TOSHIBA ELECTRONIC ENG
发明人： OKUTOMI ISAO , KUSANO TAKASHI , OSHIMA IWAO , YAMAMOTO ATSUSHI , SEKI KEISEI , SEKIGUCHI SHIGEAKI
IPC分类号： B22F7/00 , C22C1/04 , H01H1/02 , H01H1/021 , H01H1/025 , H01H11/04 , H01H33/66
摘要： PROBLEM TO BE SOLVED: To provide a contact material superior especially in re-ignition characteristic while maintaining cut-off current caracteristic at a certain level. SOLUTION: Considering a 10-33 wt.% Cu-W alloy layer (area 1) to be an arced face and 35-70 wt.% Cu-W alloy layer (area 2) to be a junction face with an electrode or a conductive axis, the area 1 and 2 are integrated.

56. 发明专利

JP2000063966A MANUFACTURE OF CONTACT MATERIAL CONTACT USED FOR VACUUM BULB 失效
公开(公告)号：JP2000063966A
公开(公告)日：2000-02-29
申请号：JP23037798
申请日：1998-08-17
申请人： SHIBAFU ENGINEERING KK , TOSHIBA ELECTRONIC ENG , TOSHIBA CORP
发明人： OKUTOMI ISAO , SEKIGUCHI SHIGEAKI , KUSANO TAKASHI , OSHIMA IWAO , YAMAMOTO ATSUSHI , SEKI KEISEI , OSHIUMI KATSUMI
IPC分类号： C22C32/00 , C22C1/05 , C22C5/06 , C22C9/00 , H01H11/04 , H01H33/66
摘要： PROBLEM TO BE SOLVED: To improve the restriking characteristic by moving a heating front on a sintered body surface at a specified speed from one end of a flat plate-like sintered body to the other end thereof in a process of obtaining a sintered body. SOLUTION: When the current of not less than a specified value is shut off, the arc is stopped at one point or a plurality of points which are totally unpredictable, and a contact electrode can be abnormally melted and led to a shut-off limit. The abnormal melting forms a very large droplet to cause the rough surface of the contact electrode, degradation of the withstand voltage characteristic, the increase in the ratio of generation of restriking, and the abnormal consumption of a material. These disadvantages largely affects the non-uniformity of the material between micro areas mainly on the contact surface (the composition, components, the components and quantity of the sealed gas adsorbed or adhered to the contact surface, unevenness of the surface, etc.). To obtain a uniform surface with these material non-uniformity removed therefrom, a heating front is moved at the speed of 0.1-20 mm/second from one end of a sintered body to the other end thereof when the flat plate-like sintered body is heated.

57. 发明专利

JPH07192565A CONTACT MATERIAL AND ITS MANUFACTURE 失效
公开(公告)号：JPH07192565A
公开(公告)日：1995-07-28
申请号：JP32788793
申请日：1993-12-24
申请人： TOSHIBA CORP
发明人： MINAMI YOSHIKO , SEKIGUCHI SHIGEAKI , OKUTOMI ISAO
IPC分类号： H01H1/023 , H01H1/02 , H01H1/025 , H01H11/04
摘要： PURPOSE:To provide a contact material which has an excellent conductivity, hardness, and cut-off property, by carrying out a specific treatment, after Cu or Ag is brought into contact with a sintered body which consists of Cr, W, Mo, Ti, Ta, Nb, Zr, Co, Ni, or a carbonate of one of the above elements. CONSTITUTION:The first component which consists of Cu and/or Ag is brought into contact with a sintered body which consists of the second component consisting of at least one sort of a single substance and/or a carbonate of Cr, W, Mo, Ti, Ta, Nb, Zr, Co, and Ni. Then, they are heated rapidly to a specific temperature at 400 deg.C or higher, and less than the melting point of the first component. Then, after maintaining the temperature at a specific value and for a specific time, the temperature is raised to the value of the melting point of the first component or higher. Then, the temperature is maintained at the melting point of the first component or higher until the first component is infiltrated into the sintered body which consists of the second component, and before or after such a time, the temperature is lowered gradually to the value lower 100 deg.C or more than the temperature of the first component, so as to obtain the required contact material.

58. 发明专利

JPH05311273A 失效
公开(公告)号：JPH05311273A
公开(公告)日：1993-11-22
申请号：JP12186792
申请日：1992-05-14
申请人： TOSHIBA CORP
发明人： OKUTOMI ISAO , SEKI KEISEI , YAMAMOTO ATSUSHI , SEKIGUCHI SHIGEAKI , MAJIMA YOSHIKO
IPC分类号： C22C1/04 , B22F1/02 , B22F3/10 , B22F3/26 , H01H1/02 , H01H11/04 , H01H33/66
摘要： PURPOSE:To develop a contact allay for a vacuum valve small in the generation of restrikes and excellent in current shielding properties by compacting Cr powder or the like having a protective layer by a specified high vapor pressure material as a raw material, thereafter sintering it and infiltrating a conductive material of Cu or the like into the voids of the sintered body. CONSTITUTION:On the surface of Cr powder excellent in arc resistance, a Cr green compact, mixed powder of Cu and Cr excellent in electrical conductivity or a green compact of Cr and Cu, a high vapor pressure material of Bi or the like is formed as a protective layer having 0.05 to 5mum thickness, and after that, sintering is executed in an atmosphere of a nonoxidizing gas such as hydrogen while contamination from the atmosphere is prevented to reduce the substance in the protective layer to

59. 发明专利

JPH042737A CONTACT MATERIAL FOR VACUUM VALVE 失效
公开(公告)号：JPH042737A
公开(公告)日：1992-01-07
申请号：JP10410290
申请日：1990-04-19
申请人： TOSHIBA CORP
发明人： OKUTOMI ISAO , SEKIGUCHI SHIGEAKI , YAMAMOTO ATSUSHI , SEKI KEISEI
IPC分类号： C22C5/08 , C22C9/00 , H01H33/66
摘要： PURPOSE:To manufacture a contact material for a vacuum valve combining excellent low cutting current properties and high frequency arc-extinguishing properties, in an Ag-Cu-metal silicide contact material having specified blending ratios of incorporating components for a vacuum valve, by forming its structure of a specified one. CONSTITUTION:In an Ag-Cu-metal silicide compound series contact material for a vacuum valve contg. high conductive components constituted of Ag and Cu and arc-resistant components constituted of metal silicide (such as WSi2 having about

60. 发明专利

JPH03295118A CONTACT MATERIAL FOR VACUUM VALVE 失效
公开(公告)号：JPH03295118A
公开(公告)日：1991-12-26
申请号：JP9788490
申请日：1990-04-13
申请人： TOSHIBA CORP
发明人： OKUTOMI ISAO , YAMAMOTO ATSUSHI , SEKI KEISEI , SEKIGUCHI SHIGEAKI
IPC分类号： C22C9/00 , H01H33/66
摘要： PURPOSE:To offer a contact material which is provided with both excellent low breaking current characteristic and breaking characteristic, and which meets the severer requirement demanded for a vacuum breaker by including a small amount of boron of specified grain size in a high conductive compound of the contact material for a vacuum valve. CONSTITUTION:In a contact material for a vacuum valve comprising a high conductive compound composed of Ag and/or Cu, and an anti-arc compound made of metallic carbide, 20-60wt.% (reference level for contact material) of high conductive compound is included, while boron (B) whose average grain size is in a range 0.05-7mum is included in the high conductive compound at 0.5-2X10 ppm (reference level for high conductive compound). The limit to the amount of B is determined as above, because the effect of stability improvement of a cutting characteristic will be poor when the amount of B is less than 0.5ppm. When the amount of B exceeds 2%, the precipitation of B becomes greater, and the difference in cutting characteristic or in breaking characteristic will thus be easily generated.

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