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    • 51. 发明授权
    • Light emitting element, light emitting device and electric appliance using the same
    • 发光元件,发光元件及使用其的电器
    • US08058794B2
    • 2011-11-15
    • US11886384
    • 2006-03-17
    • Kaoru KatoShunpei Yamazaki
    • Kaoru KatoShunpei Yamazaki
    • H01J1/62H01J63/04
    • H01L51/5048
    • It is an object of the present invention to provide a light emitting element with low drive voltage. In addition, it is another object to provide a light emitting device having the light emitting element. Further in addition, it is another object to provide an electric appliance which has a light emitting element with low drive voltage. A light emitting element of the present invention comprises a pair of electrodes, a layer containing a light emitting element and a layer containing a mixture material which contains a conductive material formed from an inorganic compound and an insulating material formed from an inorganic compound, which are interposed between the pair of electrodes, wherein the layer containing the mixture material has a resistivity of 50,000 to 1,000,000 ohm cm, preferably, 200,000 to 500,000 ohm cm. The drive voltage of the light emitting element can be lowered with the foregoing structure.
    • 本发明的目的是提供一种具有低驱动电压的发光元件。 另外,另一个目的是提供一种具有发光元件的发光器件。 此外,另一目的是提供一种具有低驱动电压的发光元件的电器。 本发明的发光元件包括一对电极,包含发光元件的层和含有由无机化合物形成的导电材料和由无机化合物形成的绝缘材料的混合材料的层,它们是 插入在该对电极之间,其中含有混合材料的层的电阻率为50,000至1,000,000欧姆厘米,优选为20万至50万欧姆厘米。 通过上述结构,能够降低发光元件的驱动电压。
    • 59. 发明授权
    • Method of forming crystalline oxide semiconductor film
    • 形成结晶氧化物半导体膜的方法
    • US09546416B2
    • 2017-01-17
    • US13221140
    • 2011-08-30
    • Shunpei Yamazaki
    • Shunpei Yamazaki
    • C30B25/00C23C14/08C23C14/54C23C14/56C30B29/16C30B25/10
    • C23C14/08C23C14/086C23C14/541C23C14/564C30B25/10C30B25/105C30B29/16
    • An oxide semiconductor film with excellent crystallinity is formed. At the time when an oxide semiconductor film is formed, as a substrate is heated to a temperature of higher than or equal to a first temperature and lower than a second temperature, a part of the substrate having a typical length of 1 nm to 1 μm is heated to a temperature higher than or equal to the second temperature. Here, the first temperature means a temperature at which crystallization occurs with some stimulation, and the second temperature means a temperature at which crystallization occurs spontaneously without any stimulation. Further, the typical length is defined as the square root of a value obtained in such a manner that the area of the part is divided by the circular constant.
    • 形成具有优异结晶度的氧化物半导体膜。 在形成氧化物半导体膜时,作为基板被加热至高于或等于第一温度且低于第二温度的温度时,具有典型长度为1nm至1μm的基板的一部分 被加热到高于或等于第二温度的温度。 这里,第一温度是指在某种刺激下发生结晶的温度,第二温度是指没有任何刺激自发发生结晶的温度。 此外,典型长度被定义为以使得部件的面积除以圆形常数的方式获得的值的平方根。