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51. 发明申请

US20080155379A1 Data Storage Device And Data Processing Method 失效
标题翻译：数据存储设备和数据处理方法
公开(公告)号：US20080155379A1
公开(公告)日：2008-06-26
申请号：US11872091
申请日：2007-10-15
申请人： Katsuhiko Katoh , Takashi Kuroda , Hiroshi Uchiike , Yasuhiro Takase
发明人： Katsuhiko Katoh , Takashi Kuroda , Hiroshi Uchiike , Yasuhiro Takase
IPC分类号： G11C29/00 , G06F11/07
CPC分类号： G11B20/1833 , G11B2220/2516
摘要： An exclusive OR (XOR) of user data (sector) 0, user data (sector) 1 and user data (sector) 2 is performed to provide virtual user data, thereby giving rise to a correlation of the sectors 0 to 2, and the virtual user data is appended with a second error correcting code C2 having a greater error correction capability than a first error correcting code C1, whereby an error uncorrectable with C1 is correctable with C2.
摘要翻译：执行用户数据（扇区）0，用户数据（扇区）1和用户数据（扇区）2的异或（XOR）以提供虚拟用户数据，从而产生扇区0至2的相关性，并且虚拟用户数据附加具有比第一纠错码C 1更大的纠错能力的第二纠错码C2，由此可用C 2校正不能用C 1校正的错误。

52. 发明申请

US20080141099A1 Data Storage Device And Data Processing Method 失效
标题翻译：数据存储设备和数据处理方法
公开(公告)号：US20080141099A1
公开(公告)日：2008-06-12
申请号：US11872166
申请日：2007-10-15
申请人： Katsuhiko Katoh , Takashi Kuroda , Hiroshi Uchiike , Yasuhiro Takase
发明人： Katsuhiko Katoh , Takashi Kuroda , Hiroshi Uchiike , Yasuhiro Takase
IPC分类号： G06F11/10
CPC分类号： G11B20/1833 , G11B2220/2516
摘要： An exclusive OR (XOR) of user data (sector) 0, user data (sector) 1 and user data (sector) 2 is performed to provide virtual user data, thereby giving rise to a correlation of the sectors 0 to 2, and the virtual user data is appended with a second error correcting code C2 having a greater error correction capability than a first error correcting code C1, whereby an error uncorrectable with C1 is correctable with C2.
摘要翻译：执行用户数据（扇区）0，用户数据（扇区）1和用户数据（扇区）2的异或（XOR）以提供虚拟用户数据，从而产生扇区0至2的相关性，并且虚拟用户数据附加具有比第一纠错码C 1更大的纠错能力的第二纠错码C2，由此可用C 2校正不能用C 1校正的错误。

53. 发明申请

US20080002244A1 Beam processing system and beam processing method 失效
公开(公告)号：US20080002244A1
公开(公告)日：2008-01-03
申请号：US11806546
申请日：2007-06-01
申请人： Takanori Yagita , Hisaki Izutani , Mitsukuni Tsukihara , Takashi Kuroda
发明人： Takanori Yagita , Hisaki Izutani , Mitsukuni Tsukihara , Takashi Kuroda
IPC分类号： G02B5/32
CPC分类号： H01J37/20 , H01J2237/201 , H01J2237/20214 , H01J2237/20228 , H01J2237/31701 , H01L21/68764 , H01L21/68771 , Y10S359/90
摘要： A beam processing system comprises a rotary disk mounted thereon with processing objects, a controller for controlling a reciprocating drive mechanism, and a beam width measuring unit for measuring a beam width of a processing beam. The controller sets an inner and an outer overscan position depending on a measured value of the beam width. The controller, based on the number of rotation of the rotary disk per unit time, a scan speed and the number of reciprocating scan times, a reversal start timing of the rotary disk at at least one of the inner and the outer overscan positions, and the measured value, controls the reciprocating drive mechanism so as to ensure an overlap region between a last and a current processing beam irradiation region on each of the processing objects, the overlap region overlapping at least half of the last processing beam irradiation region.

54. 发明授权

US07304319B2 Wafer charge compensation device and ion implantation system having the same 有权
标题翻译：晶圆电荷补偿装置和具有相同的离子注入系统
公开(公告)号：US07304319B2
公开(公告)日：2007-12-04
申请号：US11151308
申请日：2005-06-14
申请人： Hiroshi Kawaguchi , Makoto Sano , Michiro Sugitani , Junichi Murakami , Mitsukuni Tsukihara , Mitsuaki Kabasawa , Takashi Kuroda , Kazunari Ueda , Hiroshi Sogabe
发明人： Hiroshi Kawaguchi , Makoto Sano , Michiro Sugitani , Junichi Murakami , Mitsukuni Tsukihara , Mitsuaki Kabasawa , Takashi Kuroda , Kazunari Ueda , Hiroshi Sogabe
IPC分类号： H01J37/317
CPC分类号： H01J49/26 , H01J37/026 , H01J37/304 , H01J37/3171 , H01J2237/0041
摘要： A charge compensation device according to this invention is for suppressing charging of a wafer when the wafer is irradiated with a beam from a beam generation source unit. The charge compensation device comprises at least one first arc chamber having at least one first extraction hole and a second arc chamber having at least one second extraction hole faced on the reciprocal swinging beam of the predetermined scan range. A first arc voltage is applied to the first arc chamber to generate first plasma in the first arc chamber. The generated first plasma is extracted from the first arc chamber and introduced into the second arc chamber. Second plasma is produced in the second arc chamber, and second extracted plasma from the second arc chamber forms a plasma bridge between the second extraction hole and the reciprocal swinging beam.
摘要翻译：根据本发明的电荷补偿装置用于当来自光束产生源单元的光束照射晶片时，用于抑制晶片的充电。电荷补偿装置包括至少一个具有至少一个第一提取孔的第一弧形腔和具有面对预定扫描范围的往复摆动梁上的至少一个第二提取孔的第二弧形腔。第一电弧电压被施加到第一电弧室以在第一电弧室中产生第一等离子体。所产生的第一等离子体从第一电弧室提取并被引入第二电弧室。在第二电弧室中产生第二等离子体，并且来自第二电弧室的第二提取等离子体在第二提取孔和往复摆动梁之间形成等离子体桥。

55. 发明申请

US20070242533A1 Memory Access Apparatus 有权
标题翻译：存储器访问装置
公开(公告)号：US20070242533A1
公开(公告)日：2007-10-18
申请号：US11734749
申请日：2007-04-12
申请人： Kazuhiro Nakamuta , Iwao Honda , Takashi Kuroda
发明人： Kazuhiro Nakamuta , Iwao Honda , Takashi Kuroda
IPC分类号： G11C7/10
CPC分类号： G11C7/1039 , G11C7/1051 , G11C7/106 , G11C7/1066 , G11C7/22 , G11C8/06
摘要： A memory access apparatus reading data from a memory, the memory including a terminal that address information is input to, a terminal that a clock signal changing at a predetermined cycle is input to, a terminal that a read command is input to, and a terminal that outputs data stored at an address identified by the address information at a timing of the clock signal changing from one level to the other level in accordance with the read command, the memory access apparatus comprising: an address information output unit that outputs the address information and the read command at a first timing of the clock signal changing from the one level to the other level; and a read data storage unit that stores data output from the memory at a second timing after the first timing of the clock signal changing from the one level to the other level, the read data storage unit storing the data at a third timing after the second timing of the clock signal changing from the one level to the other level.
摘要翻译：从存储器读取数据的存储器访问装置，包括输入地址信息的终端的存储器，输入了以预定周期改变的时钟信号的终端，读取命令被输入的终端，以及终端根据读取命令，在时钟信号从一个电平变化到另一个电平的定时，输出存储在由地址信息识别的地址的数据，该存储器访问装置包括：地址信息输出单元，其输出地址信息以及所述读取命令在所述时钟信号从所述一个级别改变到另一个级别的第一定时; 以及读取数据存储单元，其在时钟信号从一个电平变化到另一个电平的第一定时之后的第二定时存储从存储器输出的数据，读取数据存储单元在第二时间之后的第三定时存储数据时钟信号从一个电平变化到另一个电平的时序。

56. 发明授权

US07107510B2 Data storage device and data processing method 失效
标题翻译：数据存储设备和数据处理方法
公开(公告)号：US07107510B2
公开(公告)日：2006-09-12
申请号：US10411549
申请日：2003-04-10
申请人： Katsuhiko Katoh , Takashi Kuroda , Hiroshi Uchiike , Yasuhiro Takase
发明人： Katsuhiko Katoh , Takashi Kuroda , Hiroshi Uchiike , Yasuhiro Takase
IPC分类号： H03M13/00
CPC分类号： G11B20/1833 , G11B2220/2516
摘要： The exclusive OR (XOR) of user data (sector) 0, user data (sector) 1 and user data (sector) 2 is taken to have the virtual user data, thereby giving rise to a correlation of the sectors 0 to 2, and its virtual user data is appended with C2 having a greater error correction capability than C1, whereby an error uncorrectable with C1 is correctable with C2.
摘要翻译：使用用户数据（扇区）0，用户数据（扇区）1和用户数据（扇区）2的异或（XOR）具有虚拟用户数据，从而产生扇区0至2的相关性，以及其虚拟用户数据附加有比C 1更大的纠错能力的C 2，由此可以用C 2校正不能用C 1校正的错误。

57. 发明申请

US20060113492A1 Wafer charge compensation device and ion implantation system having the same 有权
标题翻译：晶圆电荷补偿装置和具有相同的离子注入系统
公开(公告)号：US20060113492A1
公开(公告)日：2006-06-01
申请号：US11151308
申请日：2005-06-14
申请人： Hiroshi Kawaguchi , Makoto Sano , Michiro Sugitani , Junichi Murakami , Mitsukuni Tsukihara , Mitsuaki Kabasawa , Takashi Kuroda , Kazunari Ueda , Hiroshi Sogabe
发明人： Hiroshi Kawaguchi , Makoto Sano , Michiro Sugitani , Junichi Murakami , Mitsukuni Tsukihara , Mitsuaki Kabasawa , Takashi Kuroda , Kazunari Ueda , Hiroshi Sogabe
IPC分类号： H01J37/08
CPC分类号： H01J49/26 , H01J37/026 , H01J37/304 , H01J37/3171 , H01J2237/0041
摘要： A charge compensation device according to this invention is for suppressing charging of a wafer when the wafer is irradiated with a beam from a beam generation source unit. The charge compensation device comprises at least one first arc chamber having at least one first extraction hole and a second arc chamber having at least one second extraction hole faced on the reciprocal swinging beam of the predetermined scan range. A first arc voltage is applied to the first arc chamber to generate first plasma in the first arc chamber. The generated first plasma is extracted from the first arc chamber and introduced into the second arc chamber. Second plasma is produced in the second arc chamber, and second extracted plasma from the second arc chamber forms a plasma bridge between the second extraction hole and the reciprocal swinging beam.
摘要翻译：根据本发明的电荷补偿装置用于当来自光束产生源单元的光束照射晶片时，用于抑制晶片的充电。电荷补偿装置包括至少一个具有至少一个第一提取孔的第一弧形腔和具有面对预定扫描范围的往复摆动梁上的至少一个第二提取孔的第二弧形腔。第一电弧电压被施加到第一电弧室以在第一电弧室中产生第一等离子体。所产生的第一等离子体从第一电弧室提取并被引入第二电弧室。在第二电弧室中产生第二等离子体，并且来自第二电弧室的第二提取等离子体在第二提取孔和往复摆动梁之间形成等离子体桥。

58. 发明申请

US20060073326A1 Retardation film and method for manufacturing the same 审中-公开
标题翻译：延迟膜及其制造方法
公开(公告)号：US20060073326A1
公开(公告)日：2006-04-06
申请号：US10959709
申请日：2004-10-06
申请人： Kenji Shirai , Takashi Kuroda , Keiji Kashima
发明人： Kenji Shirai , Takashi Kuroda , Keiji Kashima
IPC分类号： B32B5/16
CPC分类号： G02B5/3083 , Y10T428/25 , Y10T428/31504
摘要： A main object of the present invention is to provide a retardation film capable of easily obtaining an optional retardation value even for a small amount without problems, of peeling off of the retardation layer from the base material or the like, generated in a case of forming the retardation layer. In order to achieve the above-mentioned object, the present invention provides a retardation film, wherein a material having refractive index anisotropy is contained in a polymer film, and the material having refractive index anisotropy has a concentration gradient in a thickness direction of the polymer film.
摘要翻译：本发明的主要目的是提供一种延迟膜，其能够容易地获得即使少量的可选择的延迟值，也可以在形成时产生的基材等发生相位差层的剥离延迟层。为了实现上述目的，本发明提供了一种延迟膜，其中在聚合物膜中包含具有折射率各向异性的材料，并且具有折射率各向异性的材料在聚合物的厚度方向上具有浓度梯度电影。

59. 发明授权

US06981205B2 Data storage apparatus, read data processor, and read data processing method 有权
标题翻译：数据存储装置，读数据处理器和读数据处理方法
公开(公告)号：US06981205B2
公开(公告)日：2005-12-27
申请号：US10279305
申请日：2002-10-23
申请人： Yukio Fukushima , Katsuhiko Katoh , Shunsuke Kobayashi , Takashi Kuroda , Yuzo Nakagawa , Fuminori Sai , Emi Shimono , Tetsuya Tamura , Tetsuo Ueda
发明人： Yukio Fukushima , Katsuhiko Katoh , Shunsuke Kobayashi , Takashi Kuroda , Yuzo Nakagawa , Fuminori Sai , Emi Shimono , Tetsuya Tamura , Tetsuo Ueda
IPC分类号： G06F11/08 , G06F3/06 , G11B20/10 , G11B20/18 , H03M13/43
CPC分类号： G11B20/1809
摘要： To improve the probability of error correction, thereby generating correct read data. Data is read from the same sector by a number of times and a majority decision is done in the same address, thereby the most frequently read value is regarded as the true data value in the address. For example, for an address 00, “00” is handled as a true data value.
摘要翻译：为了提高纠错的概率，从而产生正确的读取数据。数据从同一扇区读取多次，多数决定在相同的地址中完成，从而将最常读取的值视为地址中的真实数据值。例如，对于地址00，将“00”作为真实数据值处理。

60. 发明授权

US06654852B2 Method and system of reading and writing data by a disk drive apparatus 失效
标题翻译：由磁盘驱动装置读取和写入数据的方法和系统
公开(公告)号：US06654852B2
公开(公告)日：2003-11-25
申请号：US09772263
申请日：2001-01-29
申请人： Atsushi Kanamaru , Takashi Kuroda , Hiromi Nishimiya , Takahiro Saito , Hiroshi Uchiike
发明人： Atsushi Kanamaru , Takashi Kuroda , Hiromi Nishimiya , Takahiro Saito , Hiroshi Uchiike
IPC分类号： G06F1200
CPC分类号： G06F3/061 , G06F3/064 , G06F3/0659 , G06F3/0676
摘要： The present invention includes a method of reading and writing data on a recording medium, and a system including a disk drive apparatus and a disk drive apparatus controller. According to the method of the present invention, data can be read in the middle of a plurality of write commands provided that the addresses of the read/write data locations do not overlap. This method and system results in improved read/write times.
摘要翻译：本发明包括在记录介质上读取和写入数据的方法，以及包括盘驱动装置和盘驱动装置控制器的系统。根据本发明的方法，只要读/写数据位置的地址不重叠，就可以在多个写入命令的中间读取数据。该方法和系统可以改善读/写时间。

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