专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US07386162B1 Post fabrication CD modification on imprint lithography mask 失效
标题翻译：压印光刻掩模后制造CD修改
公开(公告)号：US07386162B1
公开(公告)日：2008-06-10
申请号：US10874498
申请日：2004-06-23
申请人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
发明人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： G06K9/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , H01L21/67242
摘要： The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate compensating for imprint mask critical dimension error(s). An aspect of the invention generates feedback information that facilitates control of imprint mask critical dimension via employing a scatterometry system to detect imprint mask critical dimension error, and mitigating the error via a spacer etchback procedure.
摘要翻译：本发明一般涉及光刻系统和方法，更具体地涉及有助于补偿压印掩模临界尺寸误差的系统和方法。本发明的一个方面产生反馈信息，其通过使用散射测量系统来检测压印掩模临界尺寸误差并通过间隔回蚀程序来减轻误差，从而有助于控制压印掩模临界尺寸。

52. 发明授权

US07376259B1 Topography compensation of imprint lithography patterning 失效
标题翻译：压印光刻图案的地形补偿
公开(公告)号：US07376259B1
公开(公告)日：2008-05-20
申请号：US10874499
申请日：2004-06-23
申请人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
发明人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： G06K9/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that modify an imprint mask. An aspect of the invention generates feedback information that facilitates control of imprint mask feature height via employing a scatterometry system to detect topography variation and, decreasing imprint mask feature height in order to compensate for topography variation.
摘要翻译：本发明一般涉及光刻系统和方法，更具体地涉及修改压印掩模的系统和方法。本发明的一个方面产生反馈信息，其通过使用散射测量系统来检测地形变化和减小压印掩模特征高度以便补偿地形变化，从而有助于控制印迹掩模特征高度。

53. 发明授权

US07310155B1 Extraction of tool independent line-edge-roughness (LER) measurements using in-line programmed LER and reliability structures 失效
标题翻译：使用在线编程的LER和可靠性结构提取工具独立的线边粗糙度（LER）测量
公开(公告)号：US07310155B1
公开(公告)日：2007-12-18
申请号：US10958149
申请日：2004-10-04
申请人： Luigi Capodieci , Amit P. Marathe , Bhanwar Singh , Ramkumar Subramanian
发明人： Luigi Capodieci , Amit P. Marathe , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： G01B11/04 , G01B11/14
CPC分类号： G01B11/303 , G01N21/47 , G01N21/9501
摘要： A system that facilitates extraction of line edge roughness measurements that are independent of proprietorship of a metrology device comprises a structure patterned onto silicon with known line edge roughness values associated therewith. A metrology device obtains line edge roughness measurements from the structure, and a correcting component generates an inverse function based upon a comparison between the known line edge roughness values and the measured line edge roughness values. The metrology device can thereafter measure line edge roughness upon a second structure patterned on the silicon, and the inverse function can be applied to such measured line edge roughness values to enable obtainment of line edge roughness measurements that are independent of proprietorship of the metrology device.
摘要翻译：有助于提取独立于计量装置所有权的线边缘粗糙度测量的系统包括利用与其相关联的已知线边缘粗糙度值图案化到硅上的结构。测量装置从该结构获得线边缘粗糙度测量，并且校正部件基于已知的线边缘粗糙度值与所测量的线边缘粗糙度值之间的比较产生反向函数。测量装置此后可以在硅上图案化的第二结构上测量线边缘粗糙度，并且可以将反函数应用于这种测量的线边缘粗糙度值，以使得能够获得独立于计量装置所有权的线边缘粗糙度测量。

54. 发明授权

US07305645B1 Method for manufacturing place & route based on 2-D forbidden patterns 有权
标题翻译：基于2-D禁止模式制造场所和路线的方法
公开(公告)号：US07305645B1
公开(公告)日：2007-12-04
申请号：US10935488
申请日：2004-09-07
申请人： Luigi Capodieci , Bhanwar Singh , Ramkumar Subramanian
发明人： Luigi Capodieci , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： G06F17/50 , G06K9/00
CPC分类号： G06F17/5077 , G06F2217/12 , Y02P90/265
摘要： The present invention is directed towards a system and/or methodology that facilitates controlling routing of blocks on a floor plan in an integrated circuit. A pattern collector receives a partially created routing pattern, and a comparing component makes a comparison between the at least partially created routing pattern with one or more patterns in a library of patterns. Routing is controlled based at least in part upon the comparison.
摘要翻译：本发明涉及一种便于控制集成电路中的平面图上的块的路由的系统和/或方法。模式收集器接收部分创建的路由模式，并且比较组件在至少部分创建的路由模式与模式库中的一个或多个模式之间进行比较。至少部分地基于比较来控制路由。

55. 发明授权

US07289193B1 Frame structure for turbulence control in immersion lithography 失效
标题翻译：浸没光刻中湍流控制的框架结构
公开(公告)号：US07289193B1
公开(公告)日：2007-10-30
申请号：US11000654
申请日：2004-12-01
申请人： Ramkumar Subramanian , Bhanwar Singh , Khoi A. Phan
发明人： Ramkumar Subramanian , Bhanwar Singh , Khoi A. Phan
IPC分类号： G03B27/54 , G03B27/42
CPC分类号： G03F7/70341
摘要： Disclosed are systems and methods that employ a structural framework of cell gratings placed on a wafer surface during an immersion lithography process to restrict motion of the immersion fluid. Thus, when the stepper lens comes in contact with the immersion fluid, a typically stable immersion fluid dynamics can be maintained with the cells during the immersion lithography process. In addition, various monitoring and control systems are employed to regulate stability of the immersion fluid.
摘要翻译：公开了在浸没光刻工艺期间采用放置在晶片表面上的单元格栅的结构框架以限制浸没流体的运动的系统和方法。因此，当步进透镜与浸没流体接触时，在浸没光刻工艺期间可以与电池一起保持典型稳定的浸没流体动力学。此外，采用各种监控系统来调节浸液的稳定性。

56. 发明授权

US07251033B1 In-situ reticle contamination detection system at exposure wavelength 有权
标题翻译：曝光波长处原位标线污染检测系统
公开(公告)号：US07251033B1
公开(公告)日：2007-07-31
申请号：US10858757
申请日：2004-06-02
申请人： Khoi Phan , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
发明人： Khoi Phan , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： G01N21/00
CPC分类号： G01N21/94 , G01N2021/95676 , G03F1/84 , G03F7/70916
摘要： A system and method are provided for detecting contaminants or defects on a reticle in-situ. The system and method provide a system that measures the optical transmission through clear areas on a reticle and determines whether the optical transmission of a reticle has been degraded by contaminants or other defects.
摘要翻译：提供了一种系统和方法来现场检测标线上的污染物或缺陷。该系统和方法提供一种系统，其通过掩模版上的清晰区域测量光学透射，并确定掩模版的光学传输是否已被污染物或其他缺陷降解。

57. 发明授权

US07084988B1 System and method for creation of semiconductor multi-sloped features 失效
标题翻译：用于创建半导体多倾斜特征的系统和方法
公开(公告)号：US07084988B1
公开(公告)日：2006-08-01
申请号：US09893803
申请日：2001-06-28
申请人： Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
发明人： Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： G01B11/24
CPC分类号： H01L22/26
摘要： A system and method for monitoring the creation of semiconductor features with multi-slope profiles by employing scatterometry is provided. The system includes a wafer partitioned into one or more portions and one or more light sources, each light source directing light to one or more devices etched on a wafer, the devices having multi-sloped profiles. Reflected light is collected and converted into data by a measuring system. The data is indicative of the etching at the one or more portions of the wafer. The measuring system provides the data to a process analyzer that determines whether adjustments to etching components are necessary by comparing the data to stored etch parameter values. The system also includes etching components. At least one etch component corresponds to a portion of the wafer and performs the etching thereof. The process analyzer selectively controls the etch components to promote consistent etching of multi-slope profiles/features to compensate for wafer to wafer variations.
摘要翻译：提供了一种通过采用散射法来监测具有多斜率分布的半导体特征的创建的系统和方法。该系统包括分为一个或多个部分和一个或多个光源的晶片，每个光源将光引导到在晶片上蚀刻的一个或多个器件，该器件具有多倾斜轮廓。反射光被测量系统收集并转换成数据。数据表示在晶片的一个或多个部分处的蚀刻。测量系统将数据提供给过程分析仪，通过将数据与存储的蚀刻参数值进行比较来确定是否需要对蚀刻部件进行调整。该系统还包括蚀刻部件。至少一个蚀刻部件对应于晶片的一部分并执行其蚀刻。过程分析器选择性地控制蚀刻部件以促进多斜率分布/特征的一致蚀刻以补偿晶片到晶片的变化。

58. 发明授权

US06879406B1 Use of scatterometry as a control tool in the manufacture of extreme UV masks 失效
标题翻译：使用散射测量作为制造极端紫外线掩模的控制工具
公开(公告)号：US06879406B1
公开(公告)日：2005-04-12
申请号：US10677041
申请日：2003-10-01
申请人： Bharath Rangarajan , Ramkumar Subramanian , Bhanwar Singh
发明人： Bharath Rangarajan , Ramkumar Subramanian , Bhanwar Singh
IPC分类号： G01B11/24 , G03F1/00 , G03F1/14
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/84
摘要： One aspect of the present invention relates to a system and method for controlling an EUV mask fabrication process using a scatterometer. The system includes an EUV mask fabrication system comprising a translucent substrate having one or more layers of reflective material formed thereon and a patterned photoresist layer as the uppermost layer, a mask inspection system operatively connected to the mask fabrication system for examining the layers as they are being etched and developed by the mask fabrication system and generating data related thereto, and an EUV mask fabrication control system coupled to the mask inspection system for receiving data from the inspection system in order to regulate the mask fabrication system to facilitate obtaining desired critical dimensions. The method involves monitoring the etching of the features, generating data related to the features, and relaying the data to a control system to optimize the EUV mask fabrication process.
摘要翻译：本发明的一个方面涉及使用散射仪控制EUV掩模制造工艺的系统和方法。该系统包括EUV掩模制造系统，该系统包括其上形成有一层或多层反射材料的半透明基材和作为最上层的图案化光致抗蚀剂层，与该掩模制造系统可操作地连接的掩模检查系统，以便像它们一样检查这些层由掩模制造系统蚀刻和显影并产生与之相关的数据，以及耦合到掩模检查系统的EUV掩模制造控制系统，用于从检查系统接收数据，以便调节掩模制造系统以便于获得期望的临界尺寸。该方法包括监测特征的蚀刻，产生与特征有关的数据，以及将数据中继到控制系统以优化EUV掩模制造工艺。

59. 发明授权

US06869888B1 E-beam flood exposure of spin-on material to eliminate voids in vias 失效
标题翻译：旋转材料的电子束暴露以消除通孔中的空隙
公开(公告)号：US06869888B1
公开(公告)日：2005-03-22
申请号：US09901704
申请日：2001-07-11
申请人： Marina V. Plat , Ramkumar Subramanian , Christopher F. Lyons , Bhanwar Singh
发明人： Marina V. Plat , Ramkumar Subramanian , Christopher F. Lyons , Bhanwar Singh
IPC分类号： H01L21/027 , H01L21/3105 , H01L21/312 , H01L21/768
CPC分类号： H01L21/76808 , H01L21/02118 , H01L21/0212 , H01L21/02134 , H01L21/0276 , H01L21/31058 , H01L21/312 , H01L21/76825
摘要： A method for forming a semiconductor device is described. The method comprises forming a first layer over a semiconductor substrate. At least one hole is formed through the first layer. A bottom anti-reflective coating (BARC) layer is formed in the at least one hole. The BARC layer is exposed to an electron beam (e-beam) so that the BARC layer reaches a flow temperature in the at least one hole. An etch is performed to form a trench in the first layer and over the at least one hole, wherein the BARC layer in the at least one hole acts as an etch resistant layer during the etch.
摘要翻译：对半导体装置的形成方法进行说明。该方法包括在半导体衬底上形成第一层。通过第一层形成至少一个孔。在至少一个孔中形成底部抗反射涂层（BARC）层。 BARC层暴露于电子束（电子束），使得BARC层在至少一个孔中达到流动温度。执行蚀刻以在第一层中和在至少一个孔上形成沟槽，其中至少一个孔中的BARC层在蚀刻期间用作耐蚀刻层。

60. 发明授权

US06845345B1 System for monitoring and analyzing diagnostic data of spin tracks 失效
标题翻译：维护调度采用远程分析诊断数据
公开(公告)号：US06845345B1
公开(公告)日：2005-01-18
申请号：US09777435
申请日：2001-02-06
申请人： Bhanwar Singh , Michael K. Templeton , Ramkumar Subramanian
发明人： Bhanwar Singh , Michael K. Templeton , Ramkumar Subramanian
IPC分类号： G06F11/00
CPC分类号： G05B23/0283
摘要： A system for analyzing diagnostic information associated with a spin track is provided. The system includes one or more analysis systems that collect diagnostic information from one or more spin tracks. The system further includes one or more maintenance systems that schedule routine and/or special maintenance based on analysis of the diagnostic information. An alternative aspect of the system further includes one or more control information systems that generate of feedback control information employed in adapting the processes performed by the spin track.
摘要翻译：提供了一种用于分析与自旋轨迹相关联的诊断信息的系统。该系统包括从一个或多个自旋轨道收集诊断信息的一个或多个分析系统。该系统还包括一个或多个维护系统，其基于对诊断信息的分析来调度例行和/或特殊维护。该系统的另一方面还包括一个或多个控制信息系统，其产生用于适应由旋转轨迹执行的处理的反馈控制信息。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式